Class information for:
Level 1: STRAINED SI//MOSFET//BALLISTIC TRANSPORT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
3722 1922 22.9 62%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
3722 1                   STRAINED SI//MOSFET//BALLISTIC TRANSPORT 1922

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 STRAINED SI authKW 377487 4% 31% 76
2 MOSFET authKW 325315 14% 8% 262
3 BALLISTIC TRANSPORT authKW 297718 5% 19% 101
4 QUASI BALLISTIC TRANSPORT authKW 254152 1% 67% 24
5 ELECT TECNOL COMP address 244592 3% 26% 59
6 STRAINED SILICON authKW 243848 3% 28% 55
7 JOURNAL OF COMPUTATIONAL ELECTRONICS journal 233743 6% 12% 124
8 LOW FIELD MOBILITY authKW 173762 1% 58% 19
9 CONTACT ETCH STOP LAYER CESL authKW 162456 1% 68% 15
10 NETWORK COMPUTAT NANOTECHNOL address 161580 2% 23% 45

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 23127 69% 0% 1327
2 Engineering, Electrical & Electronic 16578 54% 0% 1039
3 Physics, Condensed Matter 2810 21% 0% 413
4 Nanoscience & Nanotechnology 1399 10% 0% 191
5 Materials Science, Multidisciplinary 284 12% 0% 229
6 Physics, Multidisciplinary 135 6% 0% 108
7 Materials Science, Coatings & Films 101 2% 0% 41
8 Computer Science, Interdisciplinary Applications 23 2% 0% 31
9 Computer Science, Hardware & Architecture 4 1% 0% 11
10 Physics, Mathematical 1 1% 0% 19

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT TECNOL COMP 244592 3% 26% 59
2 NETWORK COMPUTAT NANOTECHNOL 161580 2% 23% 45
3 WIDE BAND G SEMICOND MAT DEVICES 111886 3% 14% 51
4 ELECT TECNOL COMPUTADO 72541 1% 35% 13
5 DIEGM 63486 2% 13% 32
6 SNDL 46866 1% 27% 11
7 INTEGRIERTE SYST 45942 0% 32% 9
8 ELECT DEIS 39709 0% 50% 5
9 MICROELECT 38429 11% 1% 204
10 DEVICE MODELLING GRP 37282 1% 15% 16

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF COMPUTATIONAL ELECTRONICS 233743 6% 12% 124
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 125394 18% 2% 346
3 IEEE ELECTRON DEVICE LETTERS 44505 8% 2% 159
4 SOLID-STATE ELECTRONICS 42218 8% 2% 162
5 IEEE TRANSACTIONS ON NANOTECHNOLOGY 22189 3% 3% 50
6 JAPANESE JOURNAL OF APPLIED PHYSICS 6315 4% 1% 80
7 JOURNAL OF APPLIED PHYSICS 6010 11% 0% 204
8 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 4335 2% 1% 47
9 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 2184 0% 3% 5
10 ACTA PHYSICA SINICA 2171 3% 0% 53

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 STRAINED SI 377487 4% 31% 76 Search STRAINED+SI Search STRAINED+SI
2 MOSFET 325315 14% 8% 262 Search MOSFET Search MOSFET
3 BALLISTIC TRANSPORT 297718 5% 19% 101 Search BALLISTIC+TRANSPORT Search BALLISTIC+TRANSPORT
4 QUASI BALLISTIC TRANSPORT 254152 1% 67% 24 Search QUASI+BALLISTIC+TRANSPORT Search QUASI+BALLISTIC+TRANSPORT
5 STRAINED SILICON 243848 3% 28% 55 Search STRAINED+SILICON Search STRAINED+SILICON
6 LOW FIELD MOBILITY 173762 1% 58% 19 Search LOW+FIELD+MOBILITY Search LOW+FIELD+MOBILITY
7 CONTACT ETCH STOP LAYER CESL 162456 1% 68% 15 Search CONTACT+ETCH+STOP+LAYER+CESL Search CONTACT+ETCH+STOP+LAYER+CESL
8 CESL 148256 1% 67% 14 Search CESL Search CESL
9 TIGHT BINDING TB 132376 1% 83% 10 Search TIGHT+BINDING+TB Search TIGHT+BINDING+TB
10 MOBILITY ENHANCEMENT 127060 1% 40% 20 Search MOBILITY+ENHANCEMENT Search MOBILITY+ENHANCEMENT

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 BAYKAN, MO , THOMPSON, SE , NISHIDA, T , (2010) STRAIN EFFECTS ON THREE-DIMENSIONAL, TWO-DIMENSIONAL, AND ONE-DIMENSIONAL SILICON LOGIC DEVICES: PREDICTING THE FUTURE OF STRAINED SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 9. P. - 65 70% 25
2 NIQUET, YM , NGUYEN, VH , TRIOZON, F , DUCHEMIN, I , NIER, O , RIDEAU, D , (2014) QUANTUM CALCULATIONS OF THE CARRIER MOBILITY: METHODOLOGY, MATTHIESSEN'S RULE, AND COMPARISON WITH SEMI-CLASSICAL APPROACHES.JOURNAL OF APPLIED PHYSICS. VOL. 115. ISSUE 5. P. - 40 70% 12
3 CRESTI, A , PALA, MG , POLI, S , MOUIS, M , GHIBAUDO, G , (2011) A COMPARATIVE STUDY OF SURFACE-ROUGHNESS-INDUCED VARIABILITY IN SILICON NANOWIRE AND DOUBLE-GATE FETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 8. P. 2274 -2281 31 94% 12
4 LUNDSTROM, MS , ANTONIADIS, DA , (2014) COMPACT MODELS AND THE PHYSICS OF NANOSCALE FETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 2. P. 225-233 28 85% 20
5 BOURDET, L , LI, J , PELLOUX-PRAYER, J , TRIOZON, F , CASSE, M , BARRAUD, S , MARTINIE, S , RIDEAU, D , NIQUET, YM , (2016) CONTACT RESISTANCES IN TRIGATE AND FINFET DEVICES IN A NON-EQUILIBRIUM GREEN'S FUNCTIONS APPROACH.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 8. P. - 36 64% 1
6 TANAKA, H , SUDA, J , KIMOTO, T , (2016) MODELING OF SURFACE ROUGHNESS SCATTERING IN NANOWIRES BASED ON ATOMISTIC WAVE FUNCTION: APPLICATION TO HOLE MOBILITY IN RECTANGULAR GERMANIUM NANOWIRES.PHYSICAL REVIEW B. VOL. 93. ISSUE 15. P. - 33 75% 0
7 NEOPHYTOU, N , BAUMGARTNER, O , STANOJEVIC, Z , KOSINA, H , (2013) BANDSTRUCTURE AND MOBILITY VARIATIONS IN P-TYPE SILICON NANOWIRES UNDER ELECTROSTATIC GATE FIELD.SOLID-STATE ELECTRONICS. VOL. 90. ISSUE . P. 44-50 35 74% 1
8 BESCOND, M , LI, CS , MERA, H , CAVASSILAS, N , LANNOO, M , (2013) MODELING OF PHONON SCATTERING IN N-TYPE NANOWIRE TRANSISTORS USING ONE-SHOT ANALYTIC CONTINUATION TECHNIQUE.JOURNAL OF APPLIED PHYSICS. VOL. 114. ISSUE 15. P. - 33 72% 10
9 JEONG, C , ANTONIADIS, DA , LUNDSTROM, MS , (2009) ON BACKSCATTERING AND MOBILITY IN NANOSCALE SILICON MOSFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 56. ISSUE 11. P. 2762 -2769 29 91% 18
10 GRANZNER, R , POLYAKOV, VM , SCHIPPEL, C , SCHWIERZ, F , (2014) EMPIRICAL MODEL FOR THE EFFECTIVE ELECTRON MOBILITY IN SILICON NANOWIRES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 11. P. 3601 -3607 29 78% 4

Classes with closest relation at Level 1


Rank Class id link
1 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
2 3619 SIGE//STRAINED SI//SILICON NANOSCI
3 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
4 13793 DEVICE MODELLING GRP//RANDOM DOPANT FLUCTUATION//RANDOM DOPANT
5 36218 TIGHT BINDING THEORY//ALLOWED WAVEVECTORS//BRILLOUIN ZONE UNFOLDING
6 20525 SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION
7 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS
8 10635 TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNELING FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT
9 30183 DEGENERATE STATISTICS//RESISTANCE SURGE//INTRINSIC VELOCITY
10 18266 CERAM PHYS//RIN//PIEZOSPECTROSCOPY

Go to start page