Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
10635 | 1046 | 23.8 | 65% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
532 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET | 14860 |
10635 | 1 | TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNELING FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT | 1046 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | TUNNEL FIELD EFFECT TRANSISTOR TFET | authKW | 2250863 | 8% | 96% | 80 |
2 | TUNNELING FIELD EFFECT TRANSISTOR TFET | authKW | 1697174 | 6% | 95% | 61 |
3 | BAND TO BAND TUNNELING BTBT | authKW | 1518119 | 8% | 66% | 79 |
4 | TUNNEL FET | authKW | 1478454 | 7% | 73% | 69 |
5 | BAND TO BAND TUNNELING | authKW | 1332612 | 8% | 53% | 86 |
6 | TUNNEL FET TFET | authKW | 1231488 | 4% | 94% | 45 |
7 | TFET | authKW | 1200985 | 5% | 86% | 48 |
8 | TUNNEL FIELD EFFECT TRANSISTOR | authKW | 970032 | 3% | 92% | 36 |
9 | TUNNEL TRANSISTORS | authKW | 799229 | 4% | 74% | 37 |
10 | SUBTHRESHOLD SWING | authKW | 579313 | 5% | 35% | 56 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 12342 | 63% | 0% | 656 |
2 | Physics, Applied | 11326 | 66% | 0% | 687 |
3 | Physics, Condensed Matter | 1041 | 18% | 0% | 190 |
4 | Nanoscience & Nanotechnology | 991 | 11% | 0% | 117 |
5 | Materials Science, Multidisciplinary | 180 | 13% | 0% | 131 |
6 | Computer Science, Hardware & Architecture | 10 | 1% | 0% | 9 |
7 | Materials Science, Coatings & Films | 3 | 1% | 0% | 9 |
8 | History of Social Sciences | 0 | 0% | 0% | 1 |
9 | Multidisciplinary Sciences | -0 | 0% | 0% | 2 |
10 | Physics, Multidisciplinary | -1 | 2% | 0% | 17 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANOELECT VLSI | 224541 | 1% | 77% | 10 |
2 | NANOSCALE DEVICE CIRCUIT SYST DESIGN | 116764 | 0% | 100% | 4 |
3 | TD TEAM S LSI | 104251 | 0% | 71% | 5 |
4 | EXCELLENCE NANO TECHNOL | 93409 | 0% | 80% | 4 |
5 | DEVICE SIMULAT | 89389 | 1% | 44% | 7 |
6 | NANOELECT DEVICES | 86666 | 1% | 21% | 14 |
7 | NANOELECT DEVICES NANO | 84909 | 1% | 36% | 8 |
8 | DEPARMENT ELECT COMMUN ENGN | 58382 | 0% | 100% | 2 |
9 | ADSEL | 56130 | 0% | 38% | 5 |
10 | PETER GRUNBERG 9 | 52529 | 1% | 20% | 9 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 165094 | 3% | 18% | 32 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 87374 | 20% | 1% | 213 |
3 | IEEE ELECTRON DEVICE LETTERS | 53120 | 12% | 1% | 128 |
4 | SOLID-STATE ELECTRONICS | 20354 | 8% | 1% | 83 |
5 | JOURNAL OF COMPUTATIONAL ELECTRONICS | 11145 | 2% | 2% | 20 |
6 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 11022 | 2% | 1% | 26 |
7 | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 7732 | 1% | 2% | 12 |
8 | SUPERLATTICES AND MICROSTRUCTURES | 7298 | 4% | 1% | 40 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS | 5513 | 5% | 0% | 55 |
10 | ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY | 2322 | 0% | 2% | 5 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TUNNEL FIELD EFFECT TRANSISTOR TFET | 2250863 | 8% | 96% | 80 | Search TUNNEL+FIELD+EFFECT+TRANSISTOR+TFET | Search TUNNEL+FIELD+EFFECT+TRANSISTOR+TFET |
2 | TUNNELING FIELD EFFECT TRANSISTOR TFET | 1697174 | 6% | 95% | 61 | Search TUNNELING+FIELD+EFFECT+TRANSISTOR+TFET | Search TUNNELING+FIELD+EFFECT+TRANSISTOR+TFET |
3 | BAND TO BAND TUNNELING BTBT | 1518119 | 8% | 66% | 79 | Search BAND+TO+BAND+TUNNELING+BTBT | Search BAND+TO+BAND+TUNNELING+BTBT |
4 | TUNNEL FET | 1478454 | 7% | 73% | 69 | Search TUNNEL+FET | Search TUNNEL+FET |
5 | BAND TO BAND TUNNELING | 1332612 | 8% | 53% | 86 | Search BAND+TO+BAND+TUNNELING | Search BAND+TO+BAND+TUNNELING |
6 | TUNNEL FET TFET | 1231488 | 4% | 94% | 45 | Search TUNNEL+FET+TFET | Search TUNNEL+FET+TFET |
7 | TFET | 1200985 | 5% | 86% | 48 | Search TFET | Search TFET |
8 | TUNNEL FIELD EFFECT TRANSISTOR | 970032 | 3% | 92% | 36 | Search TUNNEL+FIELD+EFFECT+TRANSISTOR | Search TUNNEL+FIELD+EFFECT+TRANSISTOR |
9 | TUNNEL TRANSISTORS | 799229 | 4% | 74% | 37 | Search TUNNEL+TRANSISTORS | Search TUNNEL+TRANSISTORS |
10 | SUBTHRESHOLD SWING | 579313 | 5% | 35% | 56 | Search SUBTHRESHOLD+SWING | Search SUBTHRESHOLD+SWING |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | IONESCU, AM , RIEL, H , (2011) TUNNEL FIELD-EFFECT TRANSISTORS AS ENERGY-EFFICIENT ELECTRONIC SWITCHES.NATURE. VOL. 479. ISSUE 7373. P. 329 -337 | 37 | 82% | 542 |
2 | SEABAUGH, AC , ZHANG, Q , (2010) LOW-VOLTAGE TUNNEL TRANSISTORS FOR BEYOND CMOS LOGIC.PROCEEDINGS OF THE IEEE. VOL. 98. ISSUE 12. P. 2095 -2110 | 43 | 77% | 435 |
3 | RAHIMIAN, M , FATHIPOUR, M , (2016) ASYMMETRIC JUNCTIONLESS NANOWIRE TFET WITH BUILT-IN SOURCE POCKET EMPHASIZING ON ENERGY BAND MODIFICATION.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 15. ISSUE 4. P. 1297 -1307 | 39 | 87% | 0 |
4 | KUMAR, MJ , JANARDHANAN, S , (2013) DOPING-LESS TUNNEL FIELD EFFECT TRANSISTOR: DESIGN AND INVESTIGATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 60. ISSUE 10. P. 3285-3290 | 28 | 88% | 60 |
5 | YANG, Y , GUO, PF , HAN, GQ , LOW, KL , ZHAN, CL , YEO, YC , (2012) SIMULATION OF TUNNELING FIELD-EFFECT TRANSISTORS WITH EXTENDED SOURCE STRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 111. ISSUE 11. P. - | 33 | 97% | 5 |
6 | MARJANI, S , HOSSEINI, SE , (2015) RADIO-FREQUENCY SMALL-SIGNAL MODEL OF HETERO-GATE-DIELECTRIC P-N-P-N TUNNELING FIELD-EFFECT TRANSISTOR INCLUDING CHARGE CONSERVATION CAPACITANCE AND SUBSTRATE PARAMETERS.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 9. P. - | 37 | 80% | 1 |
7 | LU, H , SEABAUGH, A , (2014) TUNNEL FIELD-EFFECT TRANSISTORS: STATE-OF-THE-ART.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. VOL. 2. ISSUE 4. P. 44 -49 | 25 | 93% | 37 |
8 | RAHIMIAN, M , FATHIPOUR, M , (2016) JUNCTIONLESS NANOWIRE TFET WITH BUILT-IN N-P-N BIPOLAR ACTION: PHYSICS AND OPERATIONAL PRINCIPLE.JOURNAL OF APPLIED PHYSICS. VOL. 120. ISSUE 22. P. - | 39 | 71% | 0 |
9 | ABDI, DB , KUMAR, MJ , (2015) PNPN TUNNEL FET WITH CONTROLLABLE DRAIN SIDE TUNNEL BARRIER WIDTH: PROPOSAL AND ANALYSIS.SUPERLATTICES AND MICROSTRUCTURES. VOL. 86. ISSUE . P. 121 -125 | 26 | 100% | 4 |
10 | EUN, HR , YOON, YJ , SEO, JH , CHO, MS , LEE, JH , KWON, HI , KANG, IM , (2016) DESIGN OPTIMIZATION OF VERTICAL NANOWIRE TUNNELING FIELD-EFFECT TRANSISTOR BASED ON ALGASB/INGAAS HETEROJUNCTION LAYER.CURRENT APPLIED PHYSICS. VOL. 16. ISSUE 7. P. 681 -685 | 30 | 91% | 0 |
Classes with closest relation at Level 1 |