Class information for:
Level 1: IEEE JOURNAL OF SOLID-STATE CIRCUITS//EMBEDDED DRAM//DRAM

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
12775 881 12.8 37%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
12775 1                   IEEE JOURNAL OF SOLID-STATE CIRCUITS//EMBEDDED DRAM//DRAM 881

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE JOURNAL OF SOLID-STATE CIRCUITS journal 654657 45% 5% 394
2 EMBEDDED DRAM authKW 459354 3% 49% 27
3 DRAM authKW 293344 7% 14% 62
4 DATA RETENTION TIME authKW 244041 1% 54% 13
5 GAIN CELL authKW 221811 1% 80% 8
6 DYNAMIC RANDOM ACCESS MEMORY DRAM authKW 150359 2% 27% 16
7 FERROELECTRIC MEMORY authKW 119793 3% 15% 23
8 VOLTAGE DOWN CONVERTER authKW 110905 0% 80% 4
9 BIT LINE SENSE AMPLIFIER BLSA authKW 103975 0% 100% 3
10 CLOCK ACCESS TIME authKW 103975 0% 100% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 20547 87% 0% 766
2 Computer Science, Hardware & Architecture 1753 8% 0% 72
3 Physics, Applied 376 16% 0% 140
4 Computer Science, Information Systems 72 3% 0% 26
5 Computer Science, Theory & Methods 54 3% 0% 25
6 COMPUTER APPLICATIONS & CYBERNETICS 49 0% 0% 2
7 Computer Science, Software Engineering 45 2% 0% 19
8 Physics, Condensed Matter 14 4% 0% 39
9 Nanoscience & Nanotechnology 4 2% 0% 16
10 Telecommunications 0 1% 0% 7

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ULSI DEVICE ENGN 79216 0% 57% 4
2 DRAM DEV GRP 69317 0% 100% 2
3 MEMORY CIRCUIT GRP 69317 0% 100% 2
4 MEMORY PROD TECHNOL 51985 0% 50% 3
5 SOC DEVICE TEAM 1 46210 0% 67% 2
6 ADV SILICON SOLUT GRP 34658 0% 100% 1
7 ADV TECHNOL DEV PROC DEV 34658 0% 100% 1
8 AIZU TORY 34658 0% 100% 1
9 CPU BUSINESS TEAM 34658 0% 100% 1
10 DEVICE PROC INTEGRAT TECHNOL TEAM 34658 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE JOURNAL OF SOLID-STATE CIRCUITS 654657 45% 5% 394
2 IEICE TRANSACTIONS ON ELECTRONICS 41770 10% 1% 85
3 ISSCC DIGEST OF TECHNICAL PAPERS 12596 0% 9% 4
4 IEEE TRANSACTIONS ON ELECTRON DEVICES 7352 6% 0% 57
5 NEC RESEARCH & DEVELOPMENT 3890 1% 2% 7
6 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 2963 1% 1% 13
7 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 2277 2% 0% 15
8 IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS 2265 0% 2% 4
9 INTEGRATED FERROELECTRICS 1960 2% 0% 15
10 IEEE CIRCUITS & DEVICES 1599 0% 1% 4

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 EMBEDDED DRAM 459354 3% 49% 27 Search EMBEDDED+DRAM Search EMBEDDED+DRAM
2 DRAM 293344 7% 14% 62 Search DRAM Search DRAM
3 DATA RETENTION TIME 244041 1% 54% 13 Search DATA+RETENTION+TIME Search DATA+RETENTION+TIME
4 GAIN CELL 221811 1% 80% 8 Search GAIN+CELL Search GAIN+CELL
5 DYNAMIC RANDOM ACCESS MEMORY DRAM 150359 2% 27% 16 Search DYNAMIC+RANDOM+ACCESS+MEMORY+DRAM Search DYNAMIC+RANDOM+ACCESS+MEMORY+DRAM
6 FERROELECTRIC MEMORY 119793 3% 15% 23 Search FERROELECTRIC+MEMORY Search FERROELECTRIC+MEMORY
7 VOLTAGE DOWN CONVERTER 110905 0% 80% 4 Search VOLTAGE+DOWN+CONVERTER Search VOLTAGE+DOWN+CONVERTER
8 BIT LINE SENSE AMPLIFIER BLSA 103975 0% 100% 3 Search BIT+LINE+SENSE+AMPLIFIER+BLSA Search BIT+LINE+SENSE+AMPLIFIER+BLSA
9 CLOCK ACCESS TIME 103975 0% 100% 3 Search CLOCK+ACCESS+TIME Search CLOCK+ACCESS+TIME
10 LOGIC COMPATIBLE EDRAM 103975 0% 100% 3 Search LOGIC+COMPATIBLE+EDRAM Search LOGIC+COMPATIBLE+EDRAM

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 OLDHAM, TR , BENNETT, KW , BEAUCOUR, J , CARRIERE, T , POLVEY, C , GARNIER, P , (1993) TOTAL-DOSE FAILURES IN ADVANCED ELECTRONICS FROM SINGLE IONS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 40. ISSUE 6. P. 1820 -1830 40 74% 65
2 CHENG, W , DAS, H , CHUNG, Y , (2016) A LOGIC-COMPATIBLE EMBEDDED DRAM UTILIZING COMMON-BODY TOGGLED CAPACITIVE CROSS-TALK.JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. VOL. 16. ISSUE 6. P. 781 -792 12 100% 0
3 NA, H , ENDOH, T , (2013) A MULTI-PILLAR VERTICAL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TYPE DYNAMIC RANDOM ACCESS MEMORY CORE CIRCUIT FOR SUB-1 V CORE VOLTAGE OPERATION WITHOUT OVERDRIVE TECHNIQUE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 52. ISSUE 4. P. - 11 92% 0
4 ITOH, K , SASAKI, K , NAKAGOME, Y , (1995) TRENDS IN LOW-POWER RAM CIRCUIT TECHNOLOGIES.PROCEEDINGS OF THE IEEE. VOL. 83. ISSUE 4. P. 524-543 18 75% 111
5 LI, Y , SCHNEIDER, H , SCHNABEL, F , THEWES, R , SCHMITT-LANDSIEDEL, D , (2011) DRAM YIELD ANALYSIS AND OPTIMIZATION BY A STATISTICAL DESIGN APPROACH.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. VOL. 58. ISSUE 12. P. 2906-2918 12 80% 1
6 FLANNAGAN, ST , PELLEY, PH , HERR, N , ENGLES, BE , FENG, TH , NOGLE, SG , EAGAN, JW , DUNNIGAN, RJ , DAY, LJ , KUNG, RI , (1990) 8-NS CMOS 64KX4 AND 256KX1 SRAM.IEEE JOURNAL OF SOLID-STATE CIRCUITS. VOL. 25. ISSUE 5. P. 1049 -1056 18 100% 2
7 RIHO, Y , NAKAZATO, K , (2014) PARTIAL ACCESS MODE: NEW METHOD FOR REDUCING POWER CONSUMPTION OF DYNAMIC RANDOM ACCESS MEMORY.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. VOL. 22. ISSUE 7. P. 1461 -1469 11 73% 0
8 TANOI, S , ENDOH, T , (2015) HIGH-FREQUENCY LEVEL-UP SHIFTER BASED ON 0.18 MU M VERTICAL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH 70% REDUCTION OF OVERSHOOT VOLTAGE ABOVE POWER SUPPLY VOLTAGE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 4. P. - 12 63% 0
9 GITERMAN, R , TEMAN, A , MEINERZHAGEN, P , ATIAS, L , BURG, A , FISH, A , (2016) SINGLE-SUPPLY 3T GAIN-CELL FOR LOW-VOLTAGE LOW-POWER APPLICATIONS.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. VOL. 24. ISSUE 1. P. 358 -362 6 100% 3
10 KIRIHATA, T , GALL, M , HOSOKAWA, K , DORTU, JM , WONG, H , PFEFFERL, P , JI, BL , WEINFURTNER, O , DEBROSSE, JK , TERLETZKI, H , ET AL (1998) A 220-MM(2), FOUR- AND EIGHT-BANK, 256-MB SDRAM WITH SINGLE-SIDED STITCHED WL ARCHITECTURE.IEEE JOURNAL OF SOLID-STATE CIRCUITS. VOL. 33. ISSUE 11. P. 1711-1719 12 100% 2

Classes with closest relation at Level 1


Rank Class id link
1 17275 MARCH TEST//MEMORY TESTING//BUILT IN SELF REPAIR BISR
2 3550 SRAM//PROCESS VARIATION//POWER GATING
3 24736 1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS
4 13737 CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR CONVERTER
5 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
6 30690 CHECK DIGITS//CHECK CHARACTER SYSTEM//CHECK DIGIT SYSTEM
7 30953 ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY
8 31205 MAIN MEMORY SYSTEMS//DRAM SYSTEMS//ACCESS LATENCY IMPROVEMENT
9 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
10 14495 CRITICAL AREA//IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING//WAFER MAP

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