Class information for:
Level 1: QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
22955 363 16.2 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
22955 1                   QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES 363

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 QUANTUM MECHANICAL EFFECTS authKW 713016 7% 31% 27
2 WAVE FUNCTION PENETRATION authKW 448628 2% 67% 8
3 QUANTUM MECHANICAL EFFECTS QMES authKW 350493 1% 83% 5
4 QUANTUM MECHANICAL QM EFFECTS authKW 300421 1% 71% 5
5 INVERSION LAYER authKW 264028 5% 17% 19
6 POISSON SCHRODINGER SIMULATION authKW 252356 1% 100% 3
7 SURFACE QUANTIZATION authKW 252356 1% 100% 3
8 ULTRATHIN GATE OXIDE authKW 183512 3% 18% 12
9 ELECTRICAL OXIDE THICKNESS authKW 168237 1% 100% 2
10 INVERSION QUANTIZATION authKW 168237 1% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 5477 71% 0% 256
2 Physics, Applied 4272 68% 0% 248
3 Physics, Condensed Matter 731 25% 0% 90
4 Nanoscience & Nanotechnology 297 10% 0% 38
5 Engineering, Manufacturing 45 2% 0% 8
6 Optics 9 4% 0% 13
7 Computer Science, Hardware & Architecture 3 1% 0% 3
8 Mathematics, Interdisciplinary Applications 3 1% 0% 4
9 Materials Science, Multidisciplinary 2 6% 0% 20
10 Education, Scientific Disciplines 2 1% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SI NANO DEVICE 112157 1% 67% 2
2 ADV ELECT SYST INFORMAT COMMUN TECHNO 84119 0% 100% 1
3 ADV SEMICOND DEVICE S 84119 0% 100% 1
4 CASCADE SCI LTD 84119 0% 100% 1
5 EMERGING DEVICE TECHNOL GRP 84119 0% 100% 1
6 FLASH MEMORY DEVICE TECHNOL 84119 0% 100% 1
7 MICROTECIMOL NANOSCI 84119 0% 100% 1
8 NANDEVICES SYST 84119 0% 100% 1
9 UMRENSERGLPCS 84119 0% 100% 1
10 INTEGRATED CIRCUITS 82064 3% 9% 11

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 43993 25% 1% 89
2 SOLID-STATE ELECTRONICS 22222 14% 1% 51
3 IEEE ELECTRON DEVICE LETTERS 8959 9% 0% 31
4 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 3431 2% 1% 8
5 INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 1413 1% 0% 4
6 MICROELECTRONIC ENGINEERING 1383 4% 0% 13
7 JOURNAL OF COMPUTATIONAL ELECTRONICS 1281 1% 0% 4
8 CHINESE JOURNAL OF ELECTRONICS 1194 2% 0% 6
9 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 958 5% 0% 19
10 MICROELECTRONICS RELIABILITY 765 2% 0% 8

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 QUANTUM MECHANICAL EFFECTS 713016 7% 31% 27 Search QUANTUM+MECHANICAL+EFFECTS Search QUANTUM+MECHANICAL+EFFECTS
2 WAVE FUNCTION PENETRATION 448628 2% 67% 8 Search WAVE+FUNCTION+PENETRATION Search WAVE+FUNCTION+PENETRATION
3 QUANTUM MECHANICAL EFFECTS QMES 350493 1% 83% 5 Search QUANTUM+MECHANICAL+EFFECTS+QMES Search QUANTUM+MECHANICAL+EFFECTS+QMES
4 QUANTUM MECHANICAL QM EFFECTS 300421 1% 71% 5 Search QUANTUM+MECHANICAL+QM+EFFECTS Search QUANTUM+MECHANICAL+QM+EFFECTS
5 INVERSION LAYER 264028 5% 17% 19 Search INVERSION+LAYER Search INVERSION+LAYER
6 POISSON SCHRODINGER SIMULATION 252356 1% 100% 3 Search POISSON+SCHRODINGER+SIMULATION Search POISSON+SCHRODINGER+SIMULATION
7 SURFACE QUANTIZATION 252356 1% 100% 3 Search SURFACE+QUANTIZATION Search SURFACE+QUANTIZATION
8 ULTRATHIN GATE OXIDE 183512 3% 18% 12 Search ULTRATHIN+GATE+OXIDE Search ULTRATHIN+GATE+OXIDE
9 ELECTRICAL OXIDE THICKNESS 168237 1% 100% 2 Search ELECTRICAL+OXIDE+THICKNESS Search ELECTRICAL+OXIDE+THICKNESS
10 INVERSION QUANTIZATION 168237 1% 100% 2 Search INVERSION+QUANTIZATION Search INVERSION+QUANTIZATION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 SRIKANTAIAH, JG , DASGUPTA, A , (2012) QUANTUM MECHANICAL EFFECTS IN BULK MOSFETS FROM A COMPACT MODELING PERSPECTIVE: A REVIEW.IETE TECHNICAL REVIEW. VOL. 29. ISSUE 1. P. 3 -28 42 59% 3
2 VOGEL, EM , RICHTER, CA , RENNEX, BG , (2003) A CAPACITANCE-VOLTAGE MODEL FOR POLYSILICON-GATED MOS DEVICES INCLUDING SUBSTRATE QUANTIZATION EFFECTS BASED ON MODIFICATION OF THE TOTAL SEMICONDUCTOR CHARGE.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 9. P. 1589 -1596 20 74% 14
3 LEE, W , SU, P , SU, KW , CHIANG, CS , LIU, S , (2008) INVESTIGATION OF ANOMALOUS INVERSION C-V CHARACTERISTICS FOR LONG-CHANNEL MOSFETS WITH LEAKY DIELECTRICS: MECHANISMS AND RECONSTRUCTION.IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. VOL. 21. ISSUE 1. P. 104 -109 13 93% 2
4 YADAV, BPK , DUTTA, AK , (2010) AN ANALYTICAL MODEL OF THE FIRST EIGEN ENERGY LEVEL FOR MOSFETS HAVING ULTRATHIN GATE OXIDES.JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. VOL. 10. ISSUE 3. P. 203 -212 10 91% 0
5 WANG, Y , CHEUNG, KP , CHOI, R , LEE, BH , (2008) AN ACCURATE CAPACITANCE-VOLTAGE MEASUREMENT METHOD FOR HIGHLY LEAKY DEVICES - PART I.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 55. ISSUE 9. P. 2429 -2436 11 85% 8
6 HOU, YT , LI, MF , (2001) HOLE QUANTIZATION EFFECTS AND THRESHOLD VOLTAGE SHIFT IN PMOSFET - ASSESSED BY IMPROVED ONE-BAND EFFECTIVE MASS APPROXIMATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 48. ISSUE 6. P. 1188-1193 14 82% 5
7 HAQUE, A , KAUSER, MZ , (2002) A COMPARISON OF WAVE-FUNCTION PENETRATION EFFECTS ON GATE CAPACITANCE IN DEEP SUBMICRON N- AND P-MOSFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 49. ISSUE 9. P. 1580-1587 15 71% 19
8 LARCHER, L , PAVAN, P , PELLIZZER, F , GHIDINI, G , (2001) A NEW MODEL OF GATE CAPACITANCE AS A SIMPLE TOOL TO EXTRACT MOS PARAMETERS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 48. ISSUE 5. P. 935 -945 14 78% 20
9 PALESTRI, P , BARIN, N , BRUNEL, D , BUSSERET, C , CAMPERA, A , CHILDS, PA , DRIUSSI, F , FIEGNA, C , FIORI, G , GUSMEROLI, R , ET AL (2007) COMPARISON OF MODELING APPROACHES FOR THE CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF ADVANCED GATE STACKS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 54. ISSUE 1. P. 106-114 16 55% 12
10 SAN ANDRES, E , PANTISANO, L , RAMOS, J , ROUSSEL, PJ , O'SULLIVAN, BJ , TOLEDANO-LUQUE, M , DEGENDT, S , GROESENEKEN, G , (2007) ACCURATE GATE IMPEDANCE DETERMINATION ON ULTRALEAKY MOSFETS BY FITTING TO A THREE-LUMPED-PARAMETER MODEL AT FREQUENCIES FROM DC TO RF.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 54. ISSUE 7. P. 1705 -1712 12 75% 3

Classes with closest relation at Level 1


Rank Class id link
1 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
2 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
3 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS
4 23114 LEHRSTUHL HALBLEITERTECH//MOS TUNNEL STRUCTURE//SI MIS TET
5 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
6 28032 MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR
7 89 HFO2//HIGH K DIELECTRICS//HIGH K
8 13793 DEVICE MODELLING GRP//RANDOM DOPANT FLUCTUATION//RANDOM DOPANT
9 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
10 23722 MODIFIED LOCAL DENSITY APPROXIMATION MLDA//KINETIC CONFINEMENT//AMORPHOUS BEHAVIOR

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