Class information for:
Level 1: DEVICE MODELLING GRP//RANDOM DOPANT FLUCTUATION//RANDOM DOPANT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
13793 813 19.6 51%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
13793 1                   DEVICE MODELLING GRP//RANDOM DOPANT FLUCTUATION//RANDOM DOPANT 813

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 DEVICE MODELLING GRP address 1004693 7% 50% 54
2 RANDOM DOPANT FLUCTUATION authKW 701054 3% 67% 28
3 RANDOM DOPANT authKW 699139 3% 85% 22
4 DEVICE MODELING GRP address 451927 2% 63% 19
5 INTRINSIC PARAMETER FLUCTUATIONS authKW 422514 2% 75% 15
6 LINE EDGE ROUGHNESS LER authKW 421190 3% 42% 27
7 PARALLEL SCI COMP address 417287 2% 56% 20
8 THRESHOLD VOLTAGE FLUCTUATION authKW 352090 2% 63% 15
9 CHARACTERISTIC FLUCTUATION authKW 267073 1% 89% 8
10 STATISTICAL VARIABILITY authKW 235068 2% 48% 13

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 15277 78% 0% 637
2 Physics, Applied 6775 58% 0% 472
3 Computer Science, Hardware & Architecture 2564 10% 0% 83
4 Engineering, Manufacturing 910 6% 0% 49
5 Nanoscience & Nanotechnology 810 11% 0% 93
6 Physics, Condensed Matter 788 18% 0% 146
7 Computer Science, Information Systems 125 4% 0% 31
8 Computer Science, Interdisciplinary Applications 66 3% 0% 25
9 Materials Science, Multidisciplinary 32 8% 0% 66
10 Computer Science, Software Engineering 27 2% 0% 15

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 DEVICE MODELLING GRP 1004693 7% 50% 54
2 DEVICE MODELING GRP 451927 2% 63% 19
3 PARALLEL SCI COMP 417287 2% 56% 20
4 ROBUST TRANSISTOR PROGRAM 187787 1% 100% 5
5 NSI PROJECT 150230 0% 100% 4
6 PROGRAM COMP SCI PPGC 75115 0% 100% 2
7 RENESAS SEMICOND ENGN 75115 0% 100% 2
8 TOSHIBA IBM RD 75115 0% 100% 2
9 MICROELECT INFORMAT SYST 65782 2% 9% 19
10 COMMUN COMP ENGN 47132 2% 7% 18

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 69938 21% 1% 168
2 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 48603 6% 3% 45
3 JOURNAL OF COMPUTATIONAL ELECTRONICS 30198 4% 3% 29
4 SOLID-STATE ELECTRONICS 13222 7% 1% 59
5 IEEE ELECTRON DEVICE LETTERS 9966 6% 1% 49
6 IEEE TRANSACTIONS ON NANOTECHNOLOGY 4712 2% 1% 15
7 ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING 4651 2% 1% 19
8 JAPANESE JOURNAL OF APPLIED PHYSICS 4542 5% 0% 44
9 IEEE JOURNAL OF SOLID-STATE CIRCUITS 4335 4% 0% 31
10 IEICE TRANSACTIONS ON ELECTRONICS 3282 3% 0% 23

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 RANDOM DOPANT FLUCTUATION 701054 3% 67% 28 Search RANDOM+DOPANT+FLUCTUATION Search RANDOM+DOPANT+FLUCTUATION
2 RANDOM DOPANT 699139 3% 85% 22 Search RANDOM+DOPANT Search RANDOM+DOPANT
3 INTRINSIC PARAMETER FLUCTUATIONS 422514 2% 75% 15 Search INTRINSIC+PARAMETER+FLUCTUATIONS Search INTRINSIC+PARAMETER+FLUCTUATIONS
4 LINE EDGE ROUGHNESS LER 421190 3% 42% 27 Search LINE+EDGE+ROUGHNESS+LER Search LINE+EDGE+ROUGHNESS+LER
5 THRESHOLD VOLTAGE FLUCTUATION 352090 2% 63% 15 Search THRESHOLD+VOLTAGE+FLUCTUATION Search THRESHOLD+VOLTAGE+FLUCTUATION
6 CHARACTERISTIC FLUCTUATION 267073 1% 89% 8 Search CHARACTERISTIC+FLUCTUATION Search CHARACTERISTIC+FLUCTUATION
7 STATISTICAL VARIABILITY 235068 2% 48% 13 Search STATISTICAL+VARIABILITY Search STATISTICAL+VARIABILITY
8 RANDOM DOPANT FLUCTUATION RDF 204462 2% 39% 14 Search RANDOM+DOPANT+FLUCTUATION+RDF Search RANDOM+DOPANT+FLUCTUATION+RDF
9 MISMATCH MODELING 187787 1% 100% 5 Search MISMATCH+MODELING Search MISMATCH+MODELING
10 MOSFET 169529 15% 4% 123 Search MOSFET Search MOSFET

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 BAJOLET, A , DI FRENZA, R , GHIBAUDO, G , MEZZOMO, CM , CATHIGNOL, A , (2011) CHARACTERIZATION AND MODELING OF TRANSISTOR VARIABILITY IN ADVANCED CMOS TECHNOLOGIES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 8. P. 2235 -2248 27 90% 10
2 HAN, MH , LI, YM , HWANG, CH , (2010) DISCRETE-DOPANT-INDUCED POWER-DELAY CHARACTERISTIC FLUCTUATION IN 16 NM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR WITH HIGH DIELECTRIC CONSTANT MATERIAL.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 49. ISSUE 4. P. - 24 89% 0
3 MIZUTANI, T , YAMAMOTO, Y , MAKIYAMA, H , YAMASHITA, T , ODA, H , KAMOHARA, S , SUGII, N , HIRAMOTO, T , (2015) DETAILED ANALYSIS OF MINIMUM OPERATION VOLTAGE OF EXTRAORDINARILY UNSTABLE CELLS IN FULLY DEPLETED SILICON-ON-BURIED-OXIDE SIX-TRANSISTOR STATIC RANDOM ACCESS MEMORY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 4. P. - 19 95% 2
4 KOVAC, U , ALEXANDER, C , ROY, G , RIDDET, C , CHENG, BJ , ASENOV, A , (2010) HIERARCHICAL SIMULATION OF STATISTICAL VARIABILITY: FROM 3-D MC WITH "AB INITIO" IONIZED IMPURITY SCATTERING TO STATISTICAL COMPACT MODELS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 10. P. 2418-2426 25 83% 1
5 MIZUTANI, T , SARAYA, T , TAKEUCHI, K , KOBAYASHI, M , HIRAMOTO, T , (2016) TRANSISTOR-LEVEL CHARACTERIZATION OF STATIC RANDOM ACCESS MEMORY BIT FAILURES INDUCED BY RANDOM TELEGRAPH NOISE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 4. P. - 19 95% 0
6 LI, YM , HWANG, CH , LI, TY , (2009) RANDOM-DOPANT-INDUCED VARIABILITY IN NANO-CMOS DEVICES AND DIGITAL CIRCUITS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 56. ISSUE 8. P. 1588 -1597 30 68% 12
7 MIZUTANI, T , YAMAMOTO, Y , MAKIYAMA, H , SHINOHARA, H , IWAMATSU, T , ODA, H , SUGII, N , HIRAMOTO, T , (2014) COMPARISON AND DISTRIBUTION OF MINIMUM OPERATION VOLTAGE IN FULLY DEPLETED SILICON-ON-THIN-BURIED-OXIDE AND BULK STATIC RANDOM ACCESS MEMORY CELLS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 4. P. - 19 95% 1
8 LI, YM , HWANG, CH , LI, TY , HAN, MH , (2010) PROCESS-VARIATION EFFECT, METAL-GATE WORK-FUNCTION FLUCTUATION, AND RANDOM-DOPANT FLUCTUATION IN EMERGING CMOS TECHNOLOGIES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 2. P. 437 -447 29 64% 21
9 LI, YM , HWANG, CH , HAN, MH , (2010) SIMULATION OF CHARACTERISTIC VARIATION IN 16 NM GATE FINFET DEVICES DUE TO INTRINSIC PARAMETER FLUCTUATIONS.NANOTECHNOLOGY. VOL. 21. ISSUE 9. P. - 20 91% 2
10 LI, YM , LEE, KF , YIU, CY , CHIU, YY , CHANG, RW , (2011) DUAL-MATERIAL GATE APPROACH TO SUPPRESSION OF RANDOM-DOPANT-INDUCED CHARACTERISTIC FLUCTUATION IN 16 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR DEVICES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 4. P. - 21 78% 4

Classes with closest relation at Level 1


Rank Class id link
1 3550 SRAM//PROCESS VARIATION//POWER GATING
2 14061 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI
3 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
4 12940 ANALOG PLACEMENT//CIRCUIT SIZING//ANALOG CIRCUIT SYNTHESIS
5 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
6 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
7 16952 DIGITAL TO ANALOG CONVERTER DAC//CURRENT STEERING//DIRECT DIGITAL FREQUENCY SYNTHESIZER
8 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
9 15268 VOLTAGE REFERENCE//BANDGAP REFERENCE//SMART TEMPERATURE SENSOR
10 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS

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