Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
21308 | 425 | 15.0 | 36% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
532 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET | 14860 |
21308 | 1 | BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION | 425 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | BEAM CHANNEL TRANSISTOR | authKW | 215541 | 1% | 100% | 3 |
2 | MEMORY DEVICE BUSINESS | address | 164218 | 1% | 57% | 4 |
3 | IMPURITY ENHANCED OXIDATION | authKW | 143694 | 0% | 100% | 2 |
4 | INVERSE NARROW CHANNEL EFFECT | authKW | 143694 | 0% | 100% | 2 |
5 | NARROW CHANNEL TRANSISTOR | authKW | 143694 | 0% | 100% | 2 |
6 | OXIDE RECESS | authKW | 143694 | 0% | 100% | 2 |
7 | SHALLOW TRENCH ISOLATION | authKW | 138035 | 3% | 14% | 14 |
8 | TRENCH ISOLATION | authKW | 100575 | 2% | 20% | 7 |
9 | HEIP | authKW | 95795 | 0% | 67% | 2 |
10 | SIDEWALL OXIDATION | authKW | 95795 | 0% | 67% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 6247 | 70% | 0% | 296 |
2 | Physics, Applied | 3280 | 56% | 0% | 238 |
3 | Computer Science, Hardware & Architecture | 667 | 7% | 0% | 31 |
4 | Physics, Condensed Matter | 396 | 18% | 0% | 75 |
5 | Nanoscience & Nanotechnology | 244 | 9% | 0% | 38 |
6 | Computer Science, Interdisciplinary Applications | 228 | 7% | 0% | 29 |
7 | Physics, Multidisciplinary | 34 | 6% | 0% | 25 |
8 | Materials Science, Coatings & Films | 29 | 2% | 0% | 10 |
9 | Engineering, Manufacturing | 11 | 1% | 0% | 5 |
10 | Optics | 4 | 3% | 0% | 12 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MEMORY DEVICE BUSINESS | 164218 | 1% | 57% | 4 |
2 | DEV TECH SUPPORT | 71847 | 0% | 100% | 1 |
3 | DEVICE PROC INTEGRAT 3 | 71847 | 0% | 100% | 1 |
4 | DEVICE PROC INTEGRAT PART | 71847 | 0% | 100% | 1 |
5 | DEVICES DESIGN NM 90 | 71847 | 0% | 100% | 1 |
6 | DIELECT G FILL | 71847 | 0% | 100% | 1 |
7 | DIELECT SYST MODULES PBG | 71847 | 0% | 100% | 1 |
8 | DRAM TECHNOL 6 | 71847 | 0% | 100% | 1 |
9 | EFCIS | 71847 | 0% | 100% | 1 |
10 | MEMORY DEV DVI | 71847 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 32646 | 20% | 1% | 83 |
2 | SOLID-STATE ELECTRONICS | 17503 | 12% | 0% | 49 |
3 | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 7805 | 5% | 0% | 23 |
4 | IEEE ELECTRON DEVICE LETTERS | 6685 | 7% | 0% | 29 |
5 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1688 | 3% | 0% | 14 |
6 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1653 | 4% | 0% | 19 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1309 | 6% | 0% | 24 |
8 | MICROELECTRONICS RELIABILITY | 1022 | 2% | 0% | 10 |
9 | MICROELECTRONIC ENGINEERING | 1002 | 3% | 0% | 12 |
10 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 961 | 1% | 0% | 3 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BEAM CHANNEL TRANSISTOR | 215541 | 1% | 100% | 3 | Search BEAM+CHANNEL+TRANSISTOR | Search BEAM+CHANNEL+TRANSISTOR |
2 | IMPURITY ENHANCED OXIDATION | 143694 | 0% | 100% | 2 | Search IMPURITY+ENHANCED+OXIDATION | Search IMPURITY+ENHANCED+OXIDATION |
3 | INVERSE NARROW CHANNEL EFFECT | 143694 | 0% | 100% | 2 | Search INVERSE+NARROW+CHANNEL+EFFECT | Search INVERSE+NARROW+CHANNEL+EFFECT |
4 | NARROW CHANNEL TRANSISTOR | 143694 | 0% | 100% | 2 | Search NARROW+CHANNEL+TRANSISTOR | Search NARROW+CHANNEL+TRANSISTOR |
5 | OXIDE RECESS | 143694 | 0% | 100% | 2 | Search OXIDE+RECESS | Search OXIDE+RECESS |
6 | SHALLOW TRENCH ISOLATION | 138035 | 3% | 14% | 14 | Search SHALLOW+TRENCH+ISOLATION | Search SHALLOW+TRENCH+ISOLATION |
7 | TRENCH ISOLATION | 100575 | 2% | 20% | 7 | Search TRENCH+ISOLATION | Search TRENCH+ISOLATION |
8 | HEIP | 95795 | 0% | 67% | 2 | Search HEIP | Search HEIP |
9 | SIDEWALL OXIDATION | 95795 | 0% | 67% | 2 | Search SIDEWALL+OXIDATION | Search SIDEWALL+OXIDATION |
10 | LOCOS | 78369 | 1% | 18% | 6 | Search LOCOS | Search LOCOS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PANDIT, S , SARKAR, CK , (2012) ANALYTICAL MODELLING OF INVERSE NARROW WIDTH EFFECT FOR NARROW CHANNEL STI MOSFETS.INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 99. ISSUE 3. P. 361 -377 | 9 | 82% | 0 |
2 | OISHI, T , SHIOZAWA, K , FURUKAWA, A , ABE, Y , TOKUDA, Y , (2000) ISOLATION EDGE EFFECT DEPENDING ON GATE LENGTH OF MOSFET'S WITH VARIOUS ISOLATION STRUCTURES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 47. ISSUE 4. P. 822-827 | 9 | 100% | 25 |
3 | LEE, H , LEE, JH , SHIN, H , PARK, YJ , MIN, HS , (2002) AN ANOMALOUS DEVICE DEGRADATION OF SOI NARROW WIDTH DEVICES CAUSED BY STI EDGE INFLUENCE.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 49. ISSUE 4. P. 605-612 | 10 | 83% | 16 |
4 | STEFANOV, EN , ASENOV, AM , (1990) AN EFFICIENT DIFFUSION ALGORITHM FOR 2-D VLSI PROCESS MODELING CODE.COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING. VOL. 9. ISSUE 4. P. 229-245 | 14 | 93% | 0 |
5 | ASENOV, AM , STEFANOV, EN , ANTOV, BZ , (1987) NUMERICAL STUDY OF THE EFFECT OF THE DOPING PROFILE ON THE THRESHOLD VOLTAGE OF NARROW-CHANNEL MOS-TRANSISTOR.SOLID-STATE ELECTRONICS. VOL. 30. ISSUE 12. P. 1305-1315 | 17 | 85% | 0 |
6 | LAN, JK , WANG, YL , LIU, CP , CHAO, CG , AY, CY , LIU, CW , CHENG, YL , (2003) MECHANISMS OF CIRCULAR DEFECTS FOR SHALLOW TRENCH ISOLATION OXIDE DEPOSITION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 21. ISSUE 5. P. 2098 -2104 | 13 | 57% | 0 |
7 | OISHI, T , SHIOZAWA, K , FURUKAWA, A , ABE, Y , TOKUDA, Y , SATOH, S , (1999) EXPERIMENTAL STUDY ON ISOLATION EDGE EFFECTS IN THE SHORT CHANNEL CHARACTERISTICS OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS).MICROELECTRONIC ENGINEERING. VOL. 45. ISSUE 4. P. 369-375 | 8 | 100% | 0 |
8 | LEE, H , PARK, YJ , MIN, HS , LEE, JH , SHIN, H , SUN, W , KANG, DG , (2002) EFFECTS OF SHALLOW TRENCH ISOLATION ON SILICON-ON-INSULATOR DEVICES FOR MIXED SIGNAL PROCESSING.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 40. ISSUE 4. P. 653-657 | 7 | 100% | 3 |
9 | LEE, GW , LEE, JH , KIM, YM , LEE, WC , KIM, HK , YOU, KD , PARK, CK , (2002) EFFECT ON THE GATE DIELECTRIC INTEGRITY AND THE MOSFET CHARACTERISTICS OF OXIDE CHARGES AT THE EDGE IN A SHALLOW TRENCH ISOLATION STRUCTURE.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 41. ISSUE 6. P. 912-917 | 9 | 75% | 3 |
10 | LAN, JK , WANG, YL , LIU, CP , LEE, WH , AY, C , CHENG, YL , CHANG, SC , (2004) MONITOR AND ELIMINATE THE CIRCULAR DEFECTS IN HDP-STI DEPOSITION THROUGH OXYNITRIDE/OXIDE COMPOSITE LINER.THIN SOLID FILMS. VOL. 447. ISSUE . P. 645 -650 | 12 | 52% | 1 |
Classes with closest relation at Level 1 |