Class information for:
Level 1: BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
21308 425 15.0 36%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
21308 1                   BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION 425

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 BEAM CHANNEL TRANSISTOR authKW 215541 1% 100% 3
2 MEMORY DEVICE BUSINESS address 164218 1% 57% 4
3 IMPURITY ENHANCED OXIDATION authKW 143694 0% 100% 2
4 INVERSE NARROW CHANNEL EFFECT authKW 143694 0% 100% 2
5 NARROW CHANNEL TRANSISTOR authKW 143694 0% 100% 2
6 OXIDE RECESS authKW 143694 0% 100% 2
7 SHALLOW TRENCH ISOLATION authKW 138035 3% 14% 14
8 TRENCH ISOLATION authKW 100575 2% 20% 7
9 HEIP authKW 95795 0% 67% 2
10 SIDEWALL OXIDATION authKW 95795 0% 67% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 6247 70% 0% 296
2 Physics, Applied 3280 56% 0% 238
3 Computer Science, Hardware & Architecture 667 7% 0% 31
4 Physics, Condensed Matter 396 18% 0% 75
5 Nanoscience & Nanotechnology 244 9% 0% 38
6 Computer Science, Interdisciplinary Applications 228 7% 0% 29
7 Physics, Multidisciplinary 34 6% 0% 25
8 Materials Science, Coatings & Films 29 2% 0% 10
9 Engineering, Manufacturing 11 1% 0% 5
10 Optics 4 3% 0% 12

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MEMORY DEVICE BUSINESS 164218 1% 57% 4
2 DEV TECH SUPPORT 71847 0% 100% 1
3 DEVICE PROC INTEGRAT 3 71847 0% 100% 1
4 DEVICE PROC INTEGRAT PART 71847 0% 100% 1
5 DEVICES DESIGN NM 90 71847 0% 100% 1
6 DIELECT G FILL 71847 0% 100% 1
7 DIELECT SYST MODULES PBG 71847 0% 100% 1
8 DRAM TECHNOL 6 71847 0% 100% 1
9 EFCIS 71847 0% 100% 1
10 MEMORY DEV DVI 71847 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 32646 20% 1% 83
2 SOLID-STATE ELECTRONICS 17503 12% 0% 49
3 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 7805 5% 0% 23
4 IEEE ELECTRON DEVICE LETTERS 6685 7% 0% 29
5 IEEE JOURNAL OF SOLID-STATE CIRCUITS 1688 3% 0% 14
6 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 1653 4% 0% 19
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 1309 6% 0% 24
8 MICROELECTRONICS RELIABILITY 1022 2% 0% 10
9 MICROELECTRONIC ENGINEERING 1002 3% 0% 12
10 IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION 961 1% 0% 3

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 BEAM CHANNEL TRANSISTOR 215541 1% 100% 3 Search BEAM+CHANNEL+TRANSISTOR Search BEAM+CHANNEL+TRANSISTOR
2 IMPURITY ENHANCED OXIDATION 143694 0% 100% 2 Search IMPURITY+ENHANCED+OXIDATION Search IMPURITY+ENHANCED+OXIDATION
3 INVERSE NARROW CHANNEL EFFECT 143694 0% 100% 2 Search INVERSE+NARROW+CHANNEL+EFFECT Search INVERSE+NARROW+CHANNEL+EFFECT
4 NARROW CHANNEL TRANSISTOR 143694 0% 100% 2 Search NARROW+CHANNEL+TRANSISTOR Search NARROW+CHANNEL+TRANSISTOR
5 OXIDE RECESS 143694 0% 100% 2 Search OXIDE+RECESS Search OXIDE+RECESS
6 SHALLOW TRENCH ISOLATION 138035 3% 14% 14 Search SHALLOW+TRENCH+ISOLATION Search SHALLOW+TRENCH+ISOLATION
7 TRENCH ISOLATION 100575 2% 20% 7 Search TRENCH+ISOLATION Search TRENCH+ISOLATION
8 HEIP 95795 0% 67% 2 Search HEIP Search HEIP
9 SIDEWALL OXIDATION 95795 0% 67% 2 Search SIDEWALL+OXIDATION Search SIDEWALL+OXIDATION
10 LOCOS 78369 1% 18% 6 Search LOCOS Search LOCOS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 PANDIT, S , SARKAR, CK , (2012) ANALYTICAL MODELLING OF INVERSE NARROW WIDTH EFFECT FOR NARROW CHANNEL STI MOSFETS.INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 99. ISSUE 3. P. 361 -377 9 82% 0
2 OISHI, T , SHIOZAWA, K , FURUKAWA, A , ABE, Y , TOKUDA, Y , (2000) ISOLATION EDGE EFFECT DEPENDING ON GATE LENGTH OF MOSFET'S WITH VARIOUS ISOLATION STRUCTURES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 47. ISSUE 4. P. 822-827 9 100% 25
3 LEE, H , LEE, JH , SHIN, H , PARK, YJ , MIN, HS , (2002) AN ANOMALOUS DEVICE DEGRADATION OF SOI NARROW WIDTH DEVICES CAUSED BY STI EDGE INFLUENCE.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 49. ISSUE 4. P. 605-612 10 83% 16
4 STEFANOV, EN , ASENOV, AM , (1990) AN EFFICIENT DIFFUSION ALGORITHM FOR 2-D VLSI PROCESS MODELING CODE.COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING. VOL. 9. ISSUE 4. P. 229-245 14 93% 0
5 ASENOV, AM , STEFANOV, EN , ANTOV, BZ , (1987) NUMERICAL STUDY OF THE EFFECT OF THE DOPING PROFILE ON THE THRESHOLD VOLTAGE OF NARROW-CHANNEL MOS-TRANSISTOR.SOLID-STATE ELECTRONICS. VOL. 30. ISSUE 12. P. 1305-1315 17 85% 0
6 LAN, JK , WANG, YL , LIU, CP , CHAO, CG , AY, CY , LIU, CW , CHENG, YL , (2003) MECHANISMS OF CIRCULAR DEFECTS FOR SHALLOW TRENCH ISOLATION OXIDE DEPOSITION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 21. ISSUE 5. P. 2098 -2104 13 57% 0
7 OISHI, T , SHIOZAWA, K , FURUKAWA, A , ABE, Y , TOKUDA, Y , SATOH, S , (1999) EXPERIMENTAL STUDY ON ISOLATION EDGE EFFECTS IN THE SHORT CHANNEL CHARACTERISTICS OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS).MICROELECTRONIC ENGINEERING. VOL. 45. ISSUE 4. P. 369-375 8 100% 0
8 LEE, H , PARK, YJ , MIN, HS , LEE, JH , SHIN, H , SUN, W , KANG, DG , (2002) EFFECTS OF SHALLOW TRENCH ISOLATION ON SILICON-ON-INSULATOR DEVICES FOR MIXED SIGNAL PROCESSING.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 40. ISSUE 4. P. 653-657 7 100% 3
9 LEE, GW , LEE, JH , KIM, YM , LEE, WC , KIM, HK , YOU, KD , PARK, CK , (2002) EFFECT ON THE GATE DIELECTRIC INTEGRITY AND THE MOSFET CHARACTERISTICS OF OXIDE CHARGES AT THE EDGE IN A SHALLOW TRENCH ISOLATION STRUCTURE.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 41. ISSUE 6. P. 912-917 9 75% 3
10 LAN, JK , WANG, YL , LIU, CP , LEE, WH , AY, C , CHENG, YL , CHANG, SC , (2004) MONITOR AND ELIMINATE THE CIRCULAR DEFECTS IN HDP-STI DEPOSITION THROUGH OXYNITRIDE/OXIDE COMPOSITE LINER.THIN SOLID FILMS. VOL. 447. ISSUE . P. 645 -650 12 52% 1

Classes with closest relation at Level 1


Rank Class id link
1 23664 007 MICROMETER TECHNOLOGIES//05 MICROMETER TECHNOLOGIES//5 LAYERS OF METAL
2 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS
3 23603 ELECT ELECT MAT TECHNOL//CELL ADVANCING METHOD//LC ANALOGUE
4 21285 SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY
5 24736 1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS
6 20489 PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE
7 4067 ENERGY TRANSPORT MODEL//HYDRODYNAMICAL MODELS//SUBMICRON DEVICES
8 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
9 12775 IEEE JOURNAL OF SOLID-STATE CIRCUITS//EMBEDDED DRAM//DRAM
10 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING

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