Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
4469 | 1780 | 16.6 | 54% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
532 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET | 14860 |
4469 | 1 | HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING | 1780 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HOT CARRIERS | authKW | 387047 | 6% | 21% | 110 |
2 | HOT CARRIER DEGRADATION | authKW | 232641 | 2% | 47% | 29 |
3 | CHARGE PUMPING | authKW | 213797 | 2% | 32% | 39 |
4 | IEEE TRANSACTIONS ON ELECTRON DEVICES | journal | 210390 | 24% | 3% | 431 |
5 | HOT CARRIER EFFECT | authKW | 192467 | 2% | 33% | 34 |
6 | CHARGE PUMPING CP | authKW | 179611 | 1% | 44% | 24 |
7 | CHANNEL INITIATED SECONDARY ELECTRON CHISEL | authKW | 155934 | 1% | 91% | 10 |
8 | IEEE ELECTRON DEVICE LETTERS | journal | 130889 | 15% | 3% | 262 |
9 | GIDL | authKW | 112575 | 1% | 41% | 16 |
10 | CHANNEL HOT ELECTRON CHE | authKW | 106871 | 1% | 69% | 9 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 32621 | 77% | 0% | 1378 |
2 | Physics, Applied | 17969 | 64% | 0% | 1131 |
3 | Nanoscience & Nanotechnology | 2657 | 14% | 0% | 245 |
4 | Physics, Condensed Matter | 720 | 12% | 0% | 222 |
5 | Physics, Multidisciplinary | 48 | 4% | 0% | 75 |
6 | Optics | 39 | 3% | 0% | 62 |
7 | Computer Science, Hardware & Architecture | 33 | 1% | 0% | 19 |
8 | Materials Science, Coatings & Films | 16 | 1% | 0% | 21 |
9 | COMPUTER APPLICATIONS & CYBERNETICS | 5 | 0% | 0% | 1 |
10 | Computer Science, Interdisciplinary Applications | 1 | 1% | 0% | 16 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FLORIDA SOLID STATE ELECT | 76404 | 0% | 64% | 7 |
2 | EXPLORATORY DEVICE | 68612 | 0% | 100% | 4 |
3 | PROC DEV IMPLEMENTAT | 45739 | 0% | 67% | 4 |
4 | PHYS COMPOSANTS SEMICONDUCTEURS | 38593 | 0% | 75% | 3 |
5 | MICROELECT SEMICOND DEVICE PHYS | 34306 | 0% | 100% | 2 |
6 | PHYS COMPOSANTS SEMICONDUCT | 34306 | 0% | 100% | 2 |
7 | RM DEV | 34306 | 0% | 100% | 2 |
8 | DEVICE | 31827 | 1% | 8% | 24 |
9 | CHIP DESIGN RELIABIL | 28582 | 0% | 33% | 5 |
10 | SEMICOND TECHNOL PLICAT GRP | 25720 | 0% | 25% | 6 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 210390 | 24% | 3% | 431 |
2 | IEEE ELECTRON DEVICE LETTERS | 130889 | 15% | 3% | 262 |
3 | MICROELECTRONICS RELIABILITY | 59439 | 9% | 2% | 155 |
4 | SOLID-STATE ELECTRONICS | 41742 | 9% | 2% | 155 |
5 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 23119 | 2% | 4% | 38 |
6 | MICROELECTRONIC ENGINEERING | 6206 | 3% | 1% | 61 |
7 | ELECTRON DEVICE LETTERS | 2040 | 0% | 2% | 6 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1972 | 3% | 0% | 61 |
9 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1625 | 0% | 1% | 8 |
10 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1583 | 2% | 0% | 28 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HOT CARRIERS | 387047 | 6% | 21% | 110 | Search HOT+CARRIERS | Search HOT+CARRIERS |
2 | HOT CARRIER DEGRADATION | 232641 | 2% | 47% | 29 | Search HOT+CARRIER+DEGRADATION | Search HOT+CARRIER+DEGRADATION |
3 | CHARGE PUMPING | 213797 | 2% | 32% | 39 | Search CHARGE+PUMPING | Search CHARGE+PUMPING |
4 | HOT CARRIER EFFECT | 192467 | 2% | 33% | 34 | Search HOT+CARRIER+EFFECT | Search HOT+CARRIER+EFFECT |
5 | CHARGE PUMPING CP | 179611 | 1% | 44% | 24 | Search CHARGE+PUMPING+CP | Search CHARGE+PUMPING+CP |
6 | CHANNEL INITIATED SECONDARY ELECTRON CHISEL | 155934 | 1% | 91% | 10 | Search CHANNEL+INITIATED+SECONDARY+ELECTRON+CHISEL | Search CHANNEL+INITIATED+SECONDARY+ELECTRON+CHISEL |
7 | GIDL | 112575 | 1% | 41% | 16 | Search GIDL | Search GIDL |
8 | CHANNEL HOT ELECTRON CHE | 106871 | 1% | 69% | 9 | Search CHANNEL+HOT+ELECTRON+CHE | Search CHANNEL+HOT+ELECTRON+CHE |
9 | HOT CARRIER INDUCED DEGRADATION | 103765 | 1% | 55% | 11 | Search HOT+CARRIER+INDUCED+DEGRADATION | Search HOT+CARRIER+INDUCED+DEGRADATION |
10 | SUBSTRATE CURRENT | 86079 | 1% | 31% | 16 | Search SUBSTRATE+CURRENT | Search SUBSTRATE+CURRENT |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ACOVIC, A , LAROSA, G , SUN, YC , (1996) A REVIEW OF HOT-CARRIER DEGRADATION MECHANISMS IN MOSFETS.MICROELECTRONICS RELIABILITY. VOL. 36. ISSUE 7-8. P. 845-869 | 64 | 74% | 37 |
2 | TOUHAMI, A , BOUHDADA, A , (2005) IMPACT OF INTERFACE TRAPS ON GATE-INDUCED DRAIN LEAKAGE CURRENT IN N-TYPE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR.INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 92. ISSUE 9. P. 539-552 | 36 | 75% | 2 |
3 | HABAS, P , (1995) MODELING STUDY OF THE EXPERIMENTAL-TECHNIQUES FOR THE CHARACTERIZATION OF MOSFET HOT-CARRIER AGING.MICROELECTRONICS RELIABILITY. VOL. 35. ISSUE 3. P. 481 -510 | 44 | 85% | 0 |
4 | HABAS, P , (1995) MODELING STUDY OF THE EXPERIMENTAL-TECHNIQUES FOR THE CHARACTERIZATION OF MOSFET HOT-CARRIER AGING.MICROELECTRONICS AND RELIABILITY. VOL. 35. ISSUE 7. P. 1073-1104 | 42 | 84% | 0 |
5 | ANG, DS , LING, CH , (1999) ON THE TIME-DEPENDENT DEGRADATION OF LDD N-MOSFETS UNDER HOT-CARRIER STRESS.MICROELECTRONICS RELIABILITY. VOL. 39. ISSUE 9. P. 1311-1322 | 32 | 91% | 4 |
6 | WATANABE, T , HORI, M , SARUWATARI, T , TSUCHIYA, T , ONO, Y , (2015) EVALUATION OF ACCURACY OF CHARGE PUMPING CURRENT IN TIME DOMAIN.IEICE TRANSACTIONS ON ELECTRONICS. VOL. E98C. ISSUE 5. P. 390 -394 | 23 | 82% | 0 |
7 | VUILLAUME, D , BRAVAIX, A , GOGUENHEIM, D , (1998) HOT-CARRIER INJECTIONS IN SIO2.MICROELECTRONICS RELIABILITY. VOL. 38. ISSUE 1. P. 7 -22 | 63 | 46% | 9 |
8 | HORI, M , WATANABE, T , TSUCHIYA, T , ONO, Y , (2014) ANALYSIS OF ELECTRON CAPTURE PROCESS IN CHARGE PUMPING SEQUENCE USING TIME DOMAIN MEASUREMENTS.APPLIED PHYSICS LETTERS. VOL. 105. ISSUE 26. P. - | 22 | 81% | 0 |
9 | CHEN, JH , WONG, SC , WANG, YH , (2001) DC PULSE HOT-CARRIER-STRESS EFFECTS ON GATE-INDUCED DRAIN LEAKAGE CURRENT IN N-CHANNEL MOSFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 48. ISSUE 12. P. 2746 -2753 | 28 | 90% | 0 |
10 | WEBER, W , THEWES, R , (1998) EXPERIMENTAL METHODS FOR INVESTIGATING THE DEFECT PROPERTIES OF SIO2 IN METAL OXIDE SEMICONDUCTOR TRANSISTORS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 145. ISSUE 10. P. 3638 -3646 | 29 | 91% | 2 |
Classes with closest relation at Level 1 |