Class information for:
Level 1: VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
26157 262 13.9 50%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
26157 1                   VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX 262

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 VERTICAL MOSFET authKW 713834 5% 44% 14
2 GROOVED GATE MOSFET authKW 582735 2% 100% 5
3 FILLET LOCAL OXIDATION FILOX authKW 349641 1% 100% 3
4 05V authKW 233094 1% 100% 2
5 DEVICE TECHNOL MODELING address 233094 1% 100% 2
6 FILOX authKW 233094 1% 100% 2
7 GROOVED GATE PMOSFET authKW 233094 1% 100% 2
8 SIDEWALL SPACER GATE authKW 233094 1% 100% 2
9 VERTICAL MOSFETS authKW 207190 2% 44% 4
10 LATERAL ASYMMETRIC CHANNEL LAC authKW 174817 1% 50% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 3361 65% 0% 171
2 Physics, Applied 1433 48% 0% 125
3 Physics, Condensed Matter 476 24% 0% 62
4 Nanoscience & Nanotechnology 190 10% 0% 26
5 Physics, Multidisciplinary 104 11% 0% 28
6 Materials Science, Coatings & Films 86 5% 0% 12
7 Materials Science, Multidisciplinary 21 10% 0% 26
8 Humanities, Multidisciplinary 20 1% 0% 3
9 Computer Science, Hardware & Architecture 12 2% 0% 4
10 Materials Science, Characterization, Testing 6 1% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 DEVICE TECHNOL MODELING 233094 1% 100% 2
2 ADV CMOS DEV 116547 0% 100% 1
3 ADV CUSTOM TECHNOL SEMICOND PROD SECTOR 116547 0% 100% 1
4 KILBY DEV 116547 0% 100% 1
5 MCU TECHNOL 116547 0% 100% 1
6 NANOLELECT SYST INFORMAT TECHNOL 116547 0% 100% 1
7 SIGE IC TEAM 116547 0% 100% 1
8 SILICON SOLUT GRP 116547 0% 100% 1
9 CPR ND 93235 1% 40% 2
10 PHYS QUANTUM ELECT 65553 1% 19% 3

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 15556 17% 0% 45
2 IEEE ELECTRON DEVICE LETTERS 11646 11% 0% 30
3 SOLID-STATE ELECTRONICS 5202 8% 0% 21
4 AMERASIA JOURNAL 2315 1% 1% 3
5 MICROELECTRONICS JOURNAL 1935 3% 0% 8
6 IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS 1907 1% 1% 2
7 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 1680 6% 0% 15
8 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1451 4% 0% 10
9 JAPAN QUARTERLY 1108 0% 1% 1
10 VLSI DESIGN 1044 1% 0% 2

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 VERTICAL MOSFET 713834 5% 44% 14 Search VERTICAL+MOSFET Search VERTICAL+MOSFET
2 GROOVED GATE MOSFET 582735 2% 100% 5 Search GROOVED+GATE+MOSFET Search GROOVED+GATE+MOSFET
3 FILLET LOCAL OXIDATION FILOX 349641 1% 100% 3 Search FILLET+LOCAL+OXIDATION+FILOX Search FILLET+LOCAL+OXIDATION+FILOX
4 05V 233094 1% 100% 2 Search 05V Search 05V
5 FILOX 233094 1% 100% 2 Search FILOX Search FILOX
6 GROOVED GATE PMOSFET 233094 1% 100% 2 Search GROOVED+GATE+PMOSFET Search GROOVED+GATE+PMOSFET
7 SIDEWALL SPACER GATE 233094 1% 100% 2 Search SIDEWALL+SPACER+GATE Search SIDEWALL+SPACER+GATE
8 VERTICAL MOSFETS 207190 2% 44% 4 Search VERTICAL+MOSFETS Search VERTICAL+MOSFETS
9 LATERAL ASYMMETRIC CHANNEL LAC 174817 1% 50% 3 Search LATERAL+ASYMMETRIC+CHANNEL+LAC Search LATERAL+ASYMMETRIC+CHANNEL+LAC
10 GROOVED GATE PMOSFETS 155395 1% 67% 2 Search GROOVED+GATE+PMOSFETS Search GROOVED+GATE+PMOSFETS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 HAKIM, MMA , TAN, L , BUIU, O , REDMAN-WHITE, W , HALL, S , ASHBURN, P , (2009) IMPROVED SUB-THRESHOLD SLOPE IN SHORT-CHANNEL VERTICAL MOSFETS USING FILOX OXIDATION.SOLID-STATE ELECTRONICS. VOL. 53. ISSUE 7. P. 753-759 13 76% 3
2 HAKIM, MMA , TAN, L , ABUELGASIM, A , MALLIK, K , CONNOR, S , BOUSQUET, A , DE GROOT, CH , REDMAN-WHITE, W , HALL, S , ASHBURN, P , (2010) SELF-ALIGNED SILICIDATION OF SURROUND GATE VERTICAL MOSFETS FOR LOW COST RF APPLICATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 12. P. 3318-3326 14 58% 0
3 GILI, E , UCHINO, T , AL HAKIM, MM , DE GROOT, CH , BUIU, O , HALL, S , ASHBURN, P , (2006) SHALLOW JUNCTIONS ON PILLAR SIDEWALLS FOR SUB-100-NM VERTICAL MOSFETS.IEEE ELECTRON DEVICE LETTERS. VOL. 27. ISSUE 8. P. 692 -695 10 77% 9
4 RIYADI, MA , SAAD, I , ISMAIL, R , (2010) INVESTIGATION OF PILLAR THICKNESS VARIATION EFFECT ON OBLIQUE ROTATING IMPLANTATION (ORI)-BASED VERTICAL DOUBLE GATE MOSFET.MICROELECTRONICS JOURNAL. VOL. 41. ISSUE 12. P. 827 -833 14 48% 0
5 BULUCEA, C , BAHL, SR , FRENCH, WD , YANG, JJ , FRANCIS, P , HARJONO, T , KRISHNAMURTHY, V , TAO, J , PARKER, C , (2010) PHYSICS, TECHNOLOGY, AND MODELING OF COMPLEMENTARY ASYMMETRIC MOSFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 10. P. 2363-2380 17 38% 6
6 SUSENO, JE , ANWAR, S , RIYADI, MA , ISMAIL, R , (2011) AN ANALYTICAL THRESHOLD VOLTAGE MODEL FOR THE VERTICAL SIDEWALL MOSFET WITH A CURVED-CHANNEL.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 8. ISSUE 11. P. 2299-2306 6 100% 0
7 MOERS, J , (2007) TURNING THE WORLD VERTICAL: MOSFETS WITH CURRENT FLOW PERPENDICULAR TO THE WAFER SURFACE.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 87. ISSUE 3. P. 531 -537 10 59% 12
8 KOK, OP , IBRAHIM, K , (2009) SIMULATION OF TWO-DIMENSIONAL 50 NM VERTICAL METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR INCORPORATING A DIELECTRIC POCKET.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 48. ISSUE 11. P. - 7 78% 1
9 SUSENO, JE , ANWAR, S , RIYADI, MA , ISMAIL, R , (2012) MODELING OF DRAIN CURRENT FOR GROOVED-GATE MOSFET.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 9. ISSUE 10. P. 1596-1602 5 100% 1
10 TAN, L , BUIU, O , HALL, S , GILL, E , UCHINO, T , ASHBURN, P , (2008) THE INFLUENCE OF JUNCTION DEPTH ON SHORT CHANNEL EFFECTS IN VERTICAL SIDEWALL MOSFETS.SOLID-STATE ELECTRONICS. VOL. 52. ISSUE 7. P. 1002-1007 7 64% 4

Classes with closest relation at Level 1


Rank Class id link
1 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
2 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS
3 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
4 23664 007 MICROMETER TECHNOLOGIES//05 MICROMETER TECHNOLOGIES//5 LAYERS OF METAL
5 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
6 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
7 20525 SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION
8 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
9 30685 ULTRASHALLOW JUNCTIONS//A REDUCTION METHOD//BORON CHEMICAL VAPOR DEPOSITION
10 31370 CLEANROOM//MINIENVIRONMENT//FAN FILTER UNIT

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