Class information for:
Level 2: GAN//GALLIUM NITRIDE//NITRIDES

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
20 36496 21.7 80%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
86 1                   ALGAN GAN//CURRENT COLLAPSE//HEMT 4514
344 1                   INGAN//EFFICIENCY DROOP//LIGHT EMITTING DIODES 3613
595 1                   GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE 3269
2345 1                   LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//LIGHT EXTRACTION 2275
2999 1                   GAN NANOWIRES//GAN NANORODS//AMMONIATING 2090
3942 1                   GAN//METALORGANIC CHEMICAL VAPOR DEPOSITION//NITRIDES 1877
3979 1                   INN//INDIUM NITRIDE//INN PROJECT 1870
4053 1                   ALGAN//SEMICONDUCTING ALUMINUM COMPOUNDS//ALINGAN 1856
4181 1                   SEMIPOLAR//NONPOLAR//A PLANE GAN 1832
6753 1                   ALUMINUM NITRIDE//ALN FILM//ALN THIN FILM 1447
8713 1                   OHMIC CONTACT//P GAN//P TYPE GAN 1225
8875 1                   GAN//AMORPHOUS GAN//GAGDN 1209
8959 1                   CUBIC GAN//FB PHYS 6//CUBIC ALGAN 1201
10075 1                   HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH//BULK GAN 1094
10237 1                   ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX 1079
10462 1                   ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM 1061
16102 1                   INGAN QUANTUM DOTS//SPMM//GAN ALN QUANTUM DOTS 673
16807 1                   SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING 635
16944 1                   ALINN//INALN//AL1 XINXN 626
17011 1                   INGAAS ALASSB//ACT OPTOGAN//INTERSUBBAND TRANSITION 623
17919 1                   LIGAO2//ZNO SUBSTRATE//LITHIUM GALLIUM OXIDE 576
17965 1                   OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//MAT SCI PL//MICROCATHODOLUMINESCENCE 573
19691 1                   FLUCTUAT//ELLIPSOIDAL VALLEYS//HOT PHONONS 494
21167 1                   GAN ON DIAMOND//DEVICE THERMOG RELIABIL//CHANNEL TEMPERATURE 430
31016 1                   GRUNBERG//CRHEA UP//CRITICAL STACK THICKNESS 159
34897 1                   ALGAN GAN HBT//P INGAN//COMMON EMITTER 105
35868 1                   BGAN//GABN//A1 HRXD 90

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 GAN authKW 2507711 10% 79% 3807
2 GALLIUM NITRIDE authKW 654030 3% 73% 1081
3 NITRIDES authKW 623491 5% 43% 1723
4 INGAN authKW 590955 2% 88% 805
5 ALGAN authKW 432625 2% 87% 599
6 PHYSICS, APPLIED WoSSC 362256 63% 2% 23005
7 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH journal 303435 1% 85% 426
8 GALLIUM COMPOUNDS authKW 278456 2% 47% 714
9 ALGAN GAN authKW 276461 1% 86% 387
10 APPLIED PHYSICS LETTERS journal 232373 15% 5% 5573

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 362256 63% 2% 23005
2 Physics, Condensed Matter 67377 24% 1% 8701
3 Materials Science, Multidisciplinary 56831 29% 1% 10744
4 Crystallography 31171 8% 1% 3081
5 Engineering, Electrical & Electronic 26034 18% 1% 6459
6 Materials Science, Coatings & Films 12682 5% 1% 1712
7 Nanoscience & Nanotechnology 10906 7% 1% 2465
8 Optics 5019 6% 0% 2304
9 Physics, Multidisciplinary 3732 6% 0% 2328
10 Microscopy 298 0% 0% 155

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 CRHEA 145112 1% 59% 293
2 SEMICOND 113703 3% 14% 1014
3 AKASAKI 95313 0% 96% 119
4 MICROELECT 79347 4% 8% 1291
5 STATE ARTIFICIAL MICROSTRUCT MESOSCOP P 78981 1% 41% 231
6 SEMICOND SCI TECHNOL 64397 0% 43% 179
7 ADV OPTOELECT TECHNOL 64250 1% 21% 371
8 NITRIDE SEMICOND 56043 0% 88% 76
9 RECH HETEROEPITAXIE PLICAT 55950 0% 66% 101
10 NANODEVICE SYST 53044 0% 73% 87

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 303435 1% 85% 426
2 APPLIED PHYSICS LETTERS 232373 15% 5% 5573
3 JOURNAL OF CRYSTAL GROWTH 206616 8% 9% 2790
4 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 75992 4% 7% 1370
5 APPLIED PHYSICS EXPRESS 68843 2% 15% 552
6 JOURNAL OF APPLIED PHYSICS 50334 7% 3% 2614
7 JAPANESE JOURNAL OF APPLIED PHYSICS 45403 3% 6% 942
8 IEEE ELECTRON DEVICE LETTERS 38519 2% 7% 653
9 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36817 2% 8% 600
10 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 23373 2% 4% 760

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class		 LCSH search Wikipedia search
1 GAN 2507711 10% 79% 3807 Search GAN Search GAN
2 GALLIUM NITRIDE 654030 3% 73% 1081 Search GALLIUM+NITRIDE Search GALLIUM+NITRIDE
3 NITRIDES 623491 5% 43% 1723 Search NITRIDES Search NITRIDES
4 INGAN 590955 2% 88% 805 Search INGAN Search INGAN
5 ALGAN 432625 2% 87% 599 Search ALGAN Search ALGAN
6 GALLIUM COMPOUNDS 278456 2% 47% 714 Search GALLIUM+COMPOUNDS Search GALLIUM+COMPOUNDS
7 ALGAN GAN 276461 1% 86% 387 Search ALGAN+GAN Search ALGAN+GAN
8 LIGHT EMITTING DIODES 230549 3% 27% 1021 Search LIGHT+EMITTING+DIODES Search LIGHT+EMITTING+DIODES
9 INN 201899 1% 86% 280 Search INN Search INN
10 METALORGANIC CHEMICAL VAPOR DEPOSITION 185698 1% 50% 450 Search METALORGANIC+CHEMICAL+VAPOR+DEPOSITION Search METALORGANIC+CHEMICAL+VAPOR+DEPOSITION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 RESHCHIKOV, MA , MORKOC, H , (2005) LUMINESCENCE PROPERTIES OF DEFECTS IN GAN.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 6. P. - 406 85% 825
2 PEARTON, SJ , ZOLPER, JC , SHUL, RJ , REN, F , (1999) GAN: PROCESSING, DEFECTS, AND DEVICES.JOURNAL OF APPLIED PHYSICS. VOL. 86. ISSUE 1. P. 1 -78 321 76% 1082
3 LI, GQ , WANG, WL , YANG, WJ , LIN, YH , WANG, HY , LIN, ZT , ZHOU, SZ , (2016) GAN-BASED LIGHT-EMITTING DIODES ON VARIOUS SUBSTRATES: A CRITICAL REVIEW.REPORTS ON PROGRESS IN PHYSICS. VOL. 79. ISSUE 5. P. - 269 92% 4
4 WU, JQ , (2009) WHEN GROUP-III NITRIDES GO INFRARED: NEW PROPERTIES AND PERSPECTIVES.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 1. P. - 225 87% 447
5 POLYAKOV, AY , LEE, IH , (2015) DEEP TRAPS IN GAN-BASED STRUCTURES AS AFFECTING THE PERFORMANCE OF GAN DEVICES.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 94. ISSUE . P. 1 -56 280 88% 14
6 VURGAFTMAN, I , MEYER, JR , (2003) BAND PARAMETERS FOR NITROGEN-CONTAINING SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 94. ISSUE 6. P. 3675 -3696 235 64% 1557
7 LIU, L , EDGAR, JH , (2002) SUBSTRATES FOR GALLIUM NITRIDE EPITAXY.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 37. ISSUE 3. P. 61 -127 286 83% 449
8 ZUNIGA-PEREZ, J , CONSONNI, V , LYMPERAKIS, L , KONG, X , TRAMPERT, A , FERNANDEZ-GARRIDO, S , BRANDT, O , RENEVIER, H , KELLER, S , HESTROFFER, K , ET AL (2016) POLARITY IN GAN AND ZNO: THEORY, MEASUREMENT, GROWTH, AND DEVICES.APPLIED PHYSICS REVIEWS. VOL. 3. ISSUE 4. P. - 425 61% 0
9 ZHAO, SR , NGUYEN, HPT , KIBRIA, MG , MI, ZT , (2015) III-NITRIDE NANOWIRE OPTOELECTRONICS.PROGRESS IN QUANTUM ELECTRONICS. VOL. 44. ISSUE . P. 14 -68 270 79% 11
10 WANG, XQ , YOSHIKAWA, A , (2004) MOLECULAR BEAM EPITAXY GROWTH OF GAN, AIN AND INN.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 48-9. ISSUE . P. 42 -103 306 94% 86

Classes with closest relation at Level 2


Rank Class id link
1 3252 JUNCTION TEMPERATURE//COMPACT THERMAL MODEL//DYNAMIC THERMAL MANAGEMENT
2 3620 GALLIUM OXIDE//BETA GA2O3//GA2O3
3 3506 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY
4 3018 HYDROGEN SENSOR//MICROHOTPLATE//S SENCE
5 731 ZNSE//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER
6 1724 GAMNAS//DILUTED MAGNETIC SEMICONDUCTORS//MAGNETIC SEMICONDUCTORS
7 3783 LIQUID PHASE EPITAXY//MICROCHANNEL EPITAXY//ELECTROEPITAXY
8 671 SILICON CARBIDE//4H SIC//SIC
9 103 ZNO//ZINC OXIDE//ZINC COMPOUNDS
10 952 LIGHT TRAPPING//ANTIREFLECTION//NANOWIRES

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