Class information for:
Level 1: OHMIC CONTACT//P GAN//P TYPE GAN

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
8713 1225 20.5 82%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
8713 1                   OHMIC CONTACT//P GAN//P TYPE GAN 1225

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 OHMIC CONTACT authKW 1154400 17% 22% 211
2 P GAN authKW 524327 4% 45% 47
3 P TYPE GAN authKW 151554 1% 41% 15
4 CHIP DEV GRP address 143557 1% 48% 12
5 GAN authKW 142148 14% 3% 166
6 SPECIFIC CONTACT RESISTANCE authKW 116904 2% 22% 21
7 AG REFLECTOR authKW 112160 0% 75% 6
8 N GAN authKW 108359 1% 43% 10
9 SCHOTTKY BARRIER HEIGHT authKW 90132 3% 11% 32
10 FCLED authKW 74776 0% 100% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 14058 68% 0% 827
2 Physics, Condensed Matter 2601 25% 0% 311
3 Engineering, Electrical & Electronic 2196 26% 0% 322
4 Materials Science, Multidisciplinary 1974 30% 0% 366
5 Materials Science, Coatings & Films 1645 9% 0% 107
6 Nanoscience & Nanotechnology 652 9% 0% 106
7 Microscopy 111 1% 0% 14
8 Physics, Multidisciplinary 83 6% 0% 68
9 Electrochemistry 45 2% 0% 28
10 Optics 17 3% 0% 38

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CHIP DEV GRP 143557 1% 48% 12
2 LED BUSINESS 59801 1% 20% 12
3 ARTIFICIAL MICROSTRUCT MESOSCOP PH 47927 0% 38% 5
4 CORP ADV TECHNOL GRP 47927 0% 38% 5
5 LED TEAM 44863 0% 60% 3
6 PHOTON PROJECT TEAM 38939 0% 31% 5
7 AG ELEKTR MAT 33232 0% 67% 2
8 OPTO SYST 30672 0% 31% 4
9 SEMICOND CHEM ENGN 27129 3% 4% 31
10 ADVANCED PHOTONICS 24925 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF ELECTRONIC MATERIALS 11793 6% 1% 68
2 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 11210 1% 3% 15
3 APPLIED PHYSICS LETTERS 10864 18% 0% 220
4 ELECTROCHEMICAL AND SOLID STATE LETTERS 7095 3% 1% 35
5 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6280 4% 1% 45
6 SOLID-STATE ELECTRONICS 4836 4% 0% 44
7 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4294 4% 0% 54
8 JOURNAL OF APPLIED PHYSICS 2812 9% 0% 112
9 JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS 2670 1% 1% 8
10 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2121 3% 0% 42

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 OHMIC CONTACT 1154400 17% 22% 211 Search OHMIC+CONTACT Search OHMIC+CONTACT
2 P GAN 524327 4% 45% 47 Search P+GAN Search P+GAN
3 P TYPE GAN 151554 1% 41% 15 Search P+TYPE+GAN Search P+TYPE+GAN
4 GAN 142148 14% 3% 166 Search GAN Search GAN
5 SPECIFIC CONTACT RESISTANCE 116904 2% 22% 21 Search SPECIFIC+CONTACT+RESISTANCE Search SPECIFIC+CONTACT+RESISTANCE
6 AG REFLECTOR 112160 0% 75% 6 Search AG+REFLECTOR Search AG+REFLECTOR
7 N GAN 108359 1% 43% 10 Search N+GAN Search N+GAN
8 SCHOTTKY BARRIER HEIGHT 90132 3% 11% 32 Search SCHOTTKY+BARRIER+HEIGHT Search SCHOTTKY+BARRIER+HEIGHT
9 FCLED 74776 0% 100% 3 Search FCLED Search FCLED
10 TI AL NI AU 74776 0% 100% 3 Search TI+AL+NI+AU Search TI+AL+NI+AU

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 GRECO, G , IUCOLANO, F , ROCCAFORTE, F , (2016) OHMIC CONTACTS TO GALLIUM NITRIDE MATERIALS.APPLIED SURFACE SCIENCE. VOL. 383. ISSUE . P. 324 -345 103 73% 1
2 SONG, JO , HA, JS , SEONG, TY , (2010) OHMIC-CONTACT TECHNOLOGY FOR GAN-BASED LIGHT-EMITTING DIODES: ROLE OF P-TYPE CONTACT.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 1. P. 42 -59 117 65% 64
3 CHEN, JL , BREWER, WD , (2015) OHMIC CONTACTS ON P-GAN.ADVANCED ELECTRONIC MATERIALS. VOL. 1. ISSUE 8. P. - 57 77% 2
4 VOSS, L , KHANNA, R , PEARTON, SJ , REN, F , KRAVCHENKO, I , (2006) IMPROVED THERMALLY STABLE OHMIC CONTACTS ON P-GAN BASED ON W2B.APPLIED PHYSICS LETTERS. VOL. 88. ISSUE 1. P. - 40 98% 10
5 VOSS, L , KHANNA, R , PEARTON, SJ , REN, F , KRAVCHENKO, II , (2006) USE OF TIB2 DIFFUSION BARRIERS FOR NI/AU OHMIC CONTACTS ON P-GAN.APPLIED SURFACE SCIENCE. VOL. 253. ISSUE 3. P. 1255-1259 40 98% 4
6 VOSS, LF , STAFFORD, L , GILA, BP , PEARTON, SJ , REN, F , (2008) IR-BASED DIFFUSION BARRIERS FOR OHMIC CONTACTS TO P-GAN.APPLIED SURFACE SCIENCE. VOL. 254. ISSUE 13. P. 4134 -4138 33 100% 4
7 MOHAMMAD, SN , (2005) CONTACT MECHANISMS AND DESIGN PRINCIPLES FOR SCHOTTKY CONTACTS TO GROUP-III NITRIDES.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 6. P. - 40 77% 50
8 VOSS, LF , STAFFORD, L , KHANNA, R , GILA, BP , ABERNATHY, CR , PEARTON, SJ , REN, F , KRAVCHENKO, II , (2007) OHMIC CONTACTS TO P-TYPE GAN BASED ON TAN, TIN, AND ZRN.APPLIED PHYSICS LETTERS. VOL. 90. ISSUE 21. P. - 32 94% 7
9 VOSS, LF , STAFFORD, L , WRIGHT, JS , PEARTON, SJ , REN, F , KRAVCHENKO, II , (2007) W2B AND CRB2 DIFFUSION BARRIERS FOR NI/AU CONTACTS TO P-GAN.APPLIED PHYSICS LETTERS. VOL. 91. ISSUE 4. P. - 29 97% 2
10 HU, CY , DING, ZB , QIN, ZX , CHEN, ZZ , WANG, YJ , YANG, ZJ , HU, XD , YU, TJ , YU, LS , YAO, SD , ET AL (2006) INFLUENCE OF THE PT BARRIER ON TI/AL/PT/AU OHMIC CONTACTS TO N-GAN STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND X-RAY DIFFRACTION.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 21. ISSUE 7. P. 938 -944 32 89% 2

Classes with closest relation at Level 1


Rank Class id link
1 34897 ALGAN GAN HBT//P INGAN//COMMON EMITTER
2 16807 SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING
3 2345 LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//LIGHT EXTRACTION
4 86 ALGAN GAN//CURRENT COLLAPSE//HEMT
5 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM
6 595 GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE
7 17965 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//MAT SCI PL//MICROCATHODOLUMINESCENCE
8 10237 ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX
9 6381 OHMIC CONTACT//PD GE//SOLID PHASE REGROWTH
10 36570 NANOMETER SIZED SCHOTTKY CONTACT//KSRC//BRIDGE METAL ION

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