Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
3620 | 1231 | 27.7 | 77% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
215 | 3 | ZNO//ZINC OXIDE//GAS SENSOR | 51306 |
3620 | 2 | GALLIUM OXIDE//BETA GA2O3//GA2O3 | 1231 |
8656 | 1 | GALLIUM OXIDE//BETA GA2O3//GA2O3 | 1231 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GALLIUM OXIDE | authKW | 1830214 | 12% | 51% | 144 |
2 | BETA GA2O3 | authKW | 1502009 | 6% | 83% | 73 |
3 | GA2O3 | authKW | 928241 | 6% | 47% | 80 |
4 | ALPHA GA2O3 | authKW | 176380 | 1% | 89% | 8 |
5 | GA2O3 NANOWIRES | authKW | 173626 | 1% | 100% | 7 |
6 | ALPHA GAOOH | authKW | 127560 | 0% | 86% | 6 |
7 | GALLIUM OXIDE NANOWIRES | authKW | 124019 | 0% | 100% | 5 |
8 | GA2O3 THIN FILM | authKW | 121534 | 1% | 70% | 7 |
9 | ENGN GREEN COATING TECHNOL EQUIPME | address | 79370 | 0% | 80% | 4 |
10 | OPT SINGLE CRYSTALS GRP | address | 79370 | 0% | 80% | 4 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 5657 | 44% | 0% | 542 |
2 | Materials Science, Multidisciplinary | 3162 | 37% | 0% | 451 |
3 | Physics, Condensed Matter | 2179 | 23% | 0% | 288 |
4 | Nanoscience & Nanotechnology | 780 | 9% | 0% | 115 |
5 | Materials Science, Coatings & Films | 718 | 6% | 0% | 73 |
6 | Chemistry, Physical | 586 | 17% | 0% | 211 |
7 | Crystallography | 306 | 5% | 0% | 60 |
8 | Electrochemistry | 255 | 4% | 0% | 55 |
9 | Materials Science, Ceramics | 249 | 3% | 0% | 39 |
10 | Instruments & Instrumentation | 248 | 5% | 0% | 65 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ENGN GREEN COATING TECHNOL EQUIPME | 79370 | 0% | 80% | 4 |
2 | OPT SINGLE CRYSTALS GRP | 79370 | 0% | 80% | 4 |
3 | PL ORGAN CHEM HIGHER | 49607 | 0% | 100% | 2 |
4 | INFORMAT TECHNOL ELECT | 45051 | 1% | 14% | 13 |
5 | SYNCHROTRON LIGHT PLICAT | 40160 | 1% | 10% | 16 |
6 | PHOTON ELECT SCI ENGN | 33309 | 1% | 8% | 17 |
7 | ELE ON CERAM | 33070 | 0% | 67% | 2 |
8 | GSEST | 33070 | 0% | 67% | 2 |
9 | MATCHEM | 33070 | 0% | 67% | 2 |
10 | OPTOELECT MAT DEVICES | 28985 | 2% | 5% | 23 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS EXPRESS | 3250 | 2% | 1% | 22 |
2 | SENSORS AND ACTUATORS B-CHEMICAL | 2163 | 3% | 0% | 41 |
3 | JAPANESE JOURNAL OF APPLIED PHYSICS | 1975 | 3% | 0% | 36 |
4 | APPLIED PHYSICS LETTERS | 1911 | 8% | 0% | 95 |
5 | JOURNAL OF CRYSTAL GROWTH | 1478 | 4% | 0% | 44 |
6 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 935 | 1% | 0% | 18 |
7 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 789 | 2% | 0% | 26 |
8 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 677 | 0% | 0% | 6 |
9 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 586 | 1% | 0% | 14 |
10 | JOURNAL OF ALLOYS AND COMPOUNDS | 503 | 2% | 0% | 30 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GALLIUM OXIDE | 1830214 | 12% | 51% | 144 | Search GALLIUM+OXIDE | Search GALLIUM+OXIDE |
2 | BETA GA2O3 | 1502009 | 6% | 83% | 73 | Search BETA+GA2O3 | Search BETA+GA2O3 |
3 | GA2O3 | 928241 | 6% | 47% | 80 | Search GA2O3 | Search GA2O3 |
4 | ALPHA GA2O3 | 176380 | 1% | 89% | 8 | Search ALPHA+GA2O3 | Search ALPHA+GA2O3 |
5 | GA2O3 NANOWIRES | 173626 | 1% | 100% | 7 | Search GA2O3+NANOWIRES | Search GA2O3+NANOWIRES |
6 | ALPHA GAOOH | 127560 | 0% | 86% | 6 | Search ALPHA+GAOOH | Search ALPHA+GAOOH |
7 | GALLIUM OXIDE NANOWIRES | 124019 | 0% | 100% | 5 | Search GALLIUM+OXIDE+NANOWIRES | Search GALLIUM+OXIDE+NANOWIRES |
8 | GA2O3 THIN FILM | 121534 | 1% | 70% | 7 | Search GA2O3+THIN+FILM | Search GA2O3+THIN+FILM |
9 | GAMMA GA2O3 | 77508 | 0% | 63% | 5 | Search GAMMA+GA2O3 | Search GAMMA+GA2O3 |
10 | GALLIUM OXONITRIDE | 74411 | 0% | 100% | 3 | Search GALLIUM+OXONITRIDE | Search GALLIUM+OXONITRIDE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | STEPANOV, SI , NIKOLAEV, VI , BOUGROV, VE , ROMANOV, AE , (2016) GALLIUM OXIDE: PROPERTIES AND APPLICATIONS - A REVIEW.REVIEWS ON ADVANCED MATERIALS SCIENCE. VOL. 44. ISSUE 1. P. 63 -86 | 83 | 86% | 2 |
2 | KUMAR, S , SINGH, R , (2013) NANOFUNCTIONAL GALLIUM OXIDE (GA2O3) NANOWIRES/NANOSTRUCTURES AND THEIR APPLICATIONS IN NANODEVICES.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. VOL. 7. ISSUE 10. P. 781 -792 | 75 | 95% | 13 |
3 | RAFIQUE, S , HAN, L , ZHAO, HP , (2016) SYNTHESIS OF WIDE BANDGAP GA2O3 (E-G APPROXIMATE TO 4.6-4.7EV) THIN FILMS ON SAPPHIRE BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 213. ISSUE 4. P. 1002 -1009 | 53 | 98% | 1 |
4 | HIGASHIWAKI, M , SASAKI, K , MURAKAMI, H , KUMAGAI, Y , KOUKITU, A , KURAMATA, A , MASUI, T , YAMAKOSHI, S , (2016) RECENT PROGRESS IN GA2O3 POWER DEVICES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 31. ISSUE 3. P. - | 36 | 92% | 7 |
5 | RAFIQUE, S , HAN, L , TADJER, MJ , FREITAS, JA , MAHADIK, NA , ZHAO, HP , (2016) HOMOEPITAXIAL GROWTH OF BETA-GA2O3 THIN FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION.APPLIED PHYSICS LETTERS. VOL. 108. ISSUE 18. P. - | 44 | 100% | 1 |
6 | RAFIQUE, S , HAN, L , ZORMAN, CA , ZHAO, HP , (2016) SYNTHESIS OF WIDE BANDGAP BETA-GA2O3 RODS ON 3C-SIC-ON-SI.CRYSTAL GROWTH & DESIGN. VOL. 16. ISSUE 1. P. 511 -517 | 40 | 91% | 3 |
7 | HAN, L , NEAL, AT , MOU, S , TADJER, MJ , FRENCH, RH , ZHAO, HP , RAFIQUE, S , (2016) HETEROEPITAXY OF N-TYPE BETA-GA2O3 THIN FILMS ON SAPPHIRE SUBSTRATE BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION.APPLIED PHYSICS LETTERS. VOL. 109. ISSUE 13. P. - | 44 | 100% | 0 |
8 | HOSEIN, ID , HEGDE, M , JONES, PD , CHIRMANOV, V , RADOVANOVIC, PV , (2014) EVOLUTION OF THE FACETING, MORPHOLOGY AND ASPECT RATIO OF GALLIUM OXIDE NANOWIRES GROWN BY VAPOR-SOLID DEPOSITION.JOURNAL OF CRYSTAL GROWTH. VOL. 396. ISSUE . P. 24-32 | 44 | 81% | 5 |
9 | AKAZAWA, H , (2016) FORMATION OF VARIOUS PHASES OF GALLIUM OXIDE FILMS DEPENDING ON SUBSTRATE PLANES AND DEPOSITION GASES.VACUUM. VOL. 123. ISSUE . P. 8 -16 | 37 | 95% | 0 |
10 | LEE, H , KIM, K , WOO, JJ , JUN, DJ , PARK, Y , KIM, Y , LEE, HW , CHO, YJ , CHO, HM , (2011) ALD AND MOCVD OF GA2O3 THIN FILMS USING THE NEW GA PRECURSOR DIMETHYLGALLIUM ISOPROPOXIDE, (ME2GAOPR)-PR-I.CHEMICAL VAPOR DEPOSITION. VOL. 17. ISSUE 7-9. P. 191 -197 | 48 | 77% | 12 |
Classes with closest relation at Level 2 |