Class information for:
Level 1: ALGAN//SEMICONDUCTING ALUMINUM COMPOUNDS//ALINGAN

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
4053 1856 21.6 84%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
4053 1                   ALGAN//SEMICONDUCTING ALUMINUM COMPOUNDS//ALINGAN 1856

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ALGAN authKW 433034 7% 20% 135
2 SEMICONDUCTING ALUMINUM COMPOUNDS authKW 390693 3% 49% 48
3 ALINGAN authKW 247023 2% 52% 29
4 ALN authKW 174455 5% 11% 100
5 NITRIDES authKW 162402 11% 5% 198
6 CERAM OPERAT address 131604 0% 100% 8
7 GRP HALBLEITERPHYS address 87723 1% 44% 12
8 UV CRAFTORY CO LTD address 82252 0% 100% 5
9 ALINGAN QUATERNARY ALLOYS authKW 65802 0% 100% 4
10 HT MOVPE authKW 65802 0% 100% 4

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 26903 75% 0% 1400
2 Crystallography 6150 16% 0% 296
3 Materials Science, Multidisciplinary 3670 33% 0% 606
4 Physics, Condensed Matter 2001 19% 0% 349
5 Engineering, Electrical & Electronic 117 7% 0% 137
6 Nanoscience & Nanotechnology 88 3% 0% 62
7 Optics 74 4% 0% 77
8 Physics, Multidisciplinary 65 5% 0% 84
9 Materials Science, Coatings & Films 50 2% 0% 31
10 Materials Science, Characterization, Testing 6 0% 0% 7

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CERAM OPERAT 131604 0% 100% 8
2 GRP HALBLEITERPHYS 87723 1% 44% 12
3 UV CRAFTORY CO LTD 82252 0% 100% 5
4 ECE CIE 55403 0% 42% 8
5 STATE ARTIFICIAL MICROSTRUCT MICROSCOP 53731 0% 47% 7
6 MAT SCI 6 53399 1% 15% 22
7 AKASAKI 53033 1% 16% 20
8 FERDINAND BRAUN 51176 2% 10% 30
9 QUANTENMATERIE 49747 1% 28% 11
10 NANOSCI DEV SUPPORT TEAM 37382 0% 45% 5

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 39399 15% 1% 273
2 APPLIED PHYSICS LETTERS 26990 23% 0% 425
3 APPLIED PHYSICS EXPRESS 25240 4% 2% 75
4 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 8712 6% 1% 104
5 JAPANESE JOURNAL OF APPLIED PHYSICS 4850 4% 0% 69
6 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 4724 1% 2% 12
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 3084 3% 0% 48
8 JOURNAL OF APPLIED PHYSICS 2939 8% 0% 142
9 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 968 2% 0% 35
10 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 768 0% 1% 8

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 ALGAN 433034 7% 20% 135 Search ALGAN Search ALGAN
2 SEMICONDUCTING ALUMINUM COMPOUNDS 390693 3% 49% 48 Search SEMICONDUCTING+ALUMINUM+COMPOUNDS Search SEMICONDUCTING+ALUMINUM+COMPOUNDS
3 ALINGAN 247023 2% 52% 29 Search ALINGAN Search ALINGAN
4 ALN 174455 5% 11% 100 Search ALN Search ALN
5 NITRIDES 162402 11% 5% 198 Search NITRIDES Search NITRIDES
6 ALINGAN QUATERNARY ALLOYS 65802 0% 100% 4 Search ALINGAN+QUATERNARY+ALLOYS Search ALINGAN+QUATERNARY+ALLOYS
7 HT MOVPE 65802 0% 100% 4 Search HT+MOVPE Search HT+MOVPE
8 GROWTH FROM VAPOR 61804 2% 10% 37 Search GROWTH+FROM+VAPOR Search GROWTH+FROM+VAPOR
9 METALORGANIC CHEMICAL VAPOR DEPOSITION 56711 3% 6% 56 Search METALORGANIC+CHEMICAL+VAPOR+DEPOSITION Search METALORGANIC+CHEMICAL+VAPOR+DEPOSITION
10 ALUMINUM NITRIDE 52187 3% 5% 62 Search ALUMINUM+NITRIDE Search ALUMINUM+NITRIDE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 HARTMANN, C , DITTMAR, A , WOLLWEBER, J , BICKERMANN, M , (2014) BULK ALN GROWTH BY PHYSICAL VAPOUR TRANSPORT.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 8. P. - 68 88% 5
2 KHAN, MA , SHATALOV, M , MARUSKA, HP , WANG, HM , KUOKSTIS, E , (2005) III-NITRIDE UV DEVICES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 44. ISSUE 10. P. 7191 -7206 101 51% 265
3 KOPPE, T , HOFSASS, H , VETTER, U , (2016) OVERVIEW OF BAND-EDGE AND DEFECT RELATED LUMINESCENCE IN ALUMINUM NITRIDE.JOURNAL OF LUMINESCENCE. VOL. 178. ISSUE . P. 267 -281 106 50% 0
4 HIRAYAMA, H , MAEDA, N , FUJIKAWA, S , TOYODA, S , KAMATA, N , (2014) RECENT PROGRESS AND FUTURE PROSPECTS OF ALGAN-BASED HIGH-EFFICIENCY DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - 36 92% 55
5 HIRAYAMA, H , (2005) QUATERNARY INALGAN-BASED HIGH-EFFICIENCY ULTRAVIOLET LIGHT-EMITTING DIODES.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 9. P. - 60 72% 216
6 KHAN, A , BALAKRISHNAN, K , KATONA, T , (2008) ULTRAVIOLET LIGHT-EMITTING DIODES BASED ON GROUP THREE NITRIDES.NATURE PHOTONICS. VOL. 2. ISSUE 2. P. 77 -84 46 59% 338
7 KNEISSL, M , KOLBE, T , CHUA, C , KUELLER, V , LOBO, N , STELLMACH, J , KNAUER, A , RODRIGUEZ, H , EINFELDT, S , YANG, Z , ET AL (2011) ADVANCES IN GROUP III-NITRIDE-BASED DEEP UV LIGHT-EMITTING DIODE TECHNOLOGY.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 26. ISSUE 1. P. - 25 86% 182
8 SUN, MS , ZHANG, JC , HUANG, J , WANG, JF , XU, K , (2016) ALN THIN FILM GROWN ON DIFFERENT SUBSTRATES BY HYDRIDE VAPOR PHASE EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 436. ISSUE . P. 62 -67 26 100% 2
9 TAKADA, K , NOMURA, K , TOGASHI, R , MURAKAMI, H , KOUKITU, A , KUMAGAI, Y , (2016) FORMATION MECHANISM OF ALN WHISKERS ON SAPPHIRE SURFACES HEAT-TREATED IN A MIXED FLOW OF H-2 AND N-2.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 5. P. - 31 97% 0
10 MOUSTAKAS, TD , (2016) ULTRAVIOLET OPTOELECTRONIC DEVICES BASED ON ALGAN ALLOYS GROWN BY MOLECULAR BEAM EPITAXY.MRS COMMUNICATIONS. VOL. 6. ISSUE 3. P. 247 -269 56 47% 1

Classes with closest relation at Level 1


Rank Class id link
1 3942 GAN//METALORGANIC CHEMICAL VAPOR DEPOSITION//NITRIDES
2 16944 ALINN//INALN//AL1 XINXN
3 344 INGAN//EFFICIENCY DROOP//LIGHT EMITTING DIODES
4 595 GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE
5 35868 BGAN//GABN//A1 HRXD
6 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM
7 4181 SEMIPOLAR//NONPOLAR//A PLANE GAN
8 10237 ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX
9 6753 ALUMINUM NITRIDE//ALN FILM//ALN THIN FILM
10 16102 INGAN QUANTUM DOTS//SPMM//GAN ALN QUANTUM DOTS

Go to start page