Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
2999 | 2090 | 28.5 | 87% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
2999 | 1 | GAN NANOWIRES//GAN NANORODS//AMMONIATING | 2090 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAN NANOWIRES | authKW | 691641 | 3% | 72% | 66 |
2 | GAN NANORODS | authKW | 290146 | 1% | 83% | 24 |
3 | AMMONIATING | authKW | 211087 | 1% | 85% | 17 |
4 | GAN | authKW | 205925 | 12% | 5% | 261 |
5 | SOPHIA NANOTECHNOL | address | 196385 | 1% | 61% | 22 |
6 | NANOCOLUMN | authKW | 149800 | 1% | 49% | 21 |
7 | SEMICOND MAT PROC | address | 146394 | 1% | 48% | 21 |
8 | GALLIUM NITRIDE | authKW | 145704 | 6% | 8% | 122 |
9 | NANOWIRES | authKW | 105872 | 11% | 3% | 238 |
10 | GAN NANOCOLUMNS | authKW | 87651 | 0% | 100% | 6 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 19450 | 61% | 0% | 1278 |
2 | Nanoscience & Nanotechnology | 10939 | 25% | 0% | 519 |
3 | Materials Science, Multidisciplinary | 10006 | 49% | 0% | 1014 |
4 | Physics, Condensed Matter | 4189 | 25% | 0% | 517 |
5 | Crystallography | 1979 | 9% | 0% | 185 |
6 | Chemistry, Physical | 791 | 16% | 0% | 328 |
7 | Chemistry, Multidisciplinary | 706 | 15% | 0% | 304 |
8 | Materials Science, Coatings & Films | 347 | 3% | 0% | 71 |
9 | Optics | 123 | 5% | 0% | 98 |
10 | Engineering, Electrical & Electronic | 89 | 7% | 0% | 138 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOPHIA NANOTECHNOL | 196385 | 1% | 61% | 22 |
2 | SEMICOND MAT PROC | 146394 | 1% | 48% | 21 |
3 | SUR E NANOSCI | 58046 | 1% | 15% | 26 |
4 | QUANTUM FUNCT SEMICOND | 57746 | 2% | 8% | 47 |
5 | ENGN RCAMD | 52170 | 0% | 71% | 5 |
6 | ISOM | 45377 | 1% | 10% | 31 |
7 | ENGN ADV MAT DEV RCAMD | 43825 | 0% | 100% | 3 |
8 | PHOTON MULTISCALE NANOMAT | 43807 | 1% | 25% | 12 |
9 | CEA CNRS GRP NANOPHYS SEMICOND | 43460 | 1% | 19% | 16 |
10 | NANOPHYS SEMICOND GRP | 42054 | 1% | 24% | 12 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANOTECHNOLOGY | 17167 | 6% | 1% | 117 |
2 | NANO LETTERS | 14383 | 5% | 1% | 110 |
3 | JOURNAL OF CRYSTAL GROWTH | 7664 | 6% | 0% | 129 |
4 | APPLIED PHYSICS LETTERS | 5846 | 10% | 0% | 214 |
5 | JOURNAL OF APPLIED PHYSICS | 1839 | 6% | 0% | 121 |
6 | CRYSTAL GROWTH & DESIGN | 1801 | 2% | 0% | 33 |
7 | MATERIALS LETTERS | 1482 | 2% | 0% | 49 |
8 | APPLIED PHYSICS EXPRESS | 1409 | 1% | 1% | 19 |
9 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 1406 | 1% | 1% | 18 |
10 | NANOSCALE RESEARCH LETTERS | 1310 | 1% | 0% | 20 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAN NANOWIRES | 691641 | 3% | 72% | 66 | Search GAN+NANOWIRES | Search GAN+NANOWIRES |
2 | GAN NANORODS | 290146 | 1% | 83% | 24 | Search GAN+NANORODS | Search GAN+NANORODS |
3 | AMMONIATING | 211087 | 1% | 85% | 17 | Search AMMONIATING | Search AMMONIATING |
4 | GAN | 205925 | 12% | 5% | 261 | Search GAN | Search GAN |
5 | NANOCOLUMN | 149800 | 1% | 49% | 21 | Search NANOCOLUMN | Search NANOCOLUMN |
6 | GALLIUM NITRIDE | 145704 | 6% | 8% | 122 | Search GALLIUM+NITRIDE | Search GALLIUM+NITRIDE |
7 | NANOWIRES | 105872 | 11% | 3% | 238 | Search NANOWIRES | Search NANOWIRES |
8 | GAN NANOCOLUMNS | 87651 | 0% | 100% | 6 | Search GAN+NANOCOLUMNS | Search GAN+NANOCOLUMNS |
9 | GAN NANOSTRUCTURES | 65735 | 0% | 75% | 6 | Search GAN+NANOSTRUCTURES | Search GAN+NANOSTRUCTURES |
10 | NITRIDES | 51111 | 6% | 3% | 118 | Search NITRIDES | Search NITRIDES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | LI, SF , WAAG, A , (2012) GAN BASED NANORODS FOR SOLID STATE LIGHTING.JOURNAL OF APPLIED PHYSICS. VOL. 111. ISSUE 7. P. - | 87 | 69% | 222 |
2 | CONSONNI, V , (2013) SELF-INDUCED GROWTH OF GAN NANOWIRES BY MOLECULAR BEAM EPITAXY: A CRITICAL REVIEW OF THE FORMATION MECHANISMS.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. VOL. 7. ISSUE 10. P. 699 -712 | 76 | 88% | 30 |
3 | BERTNESS, KA , SANFORD, NA , DAVYDOV, AV , (2011) GAN NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 17. ISSUE 4. P. 847 -858 | 77 | 78% | 55 |
4 | ZHAO, SR , NGUYEN, HPT , KIBRIA, MG , MI, ZT , (2015) III-NITRIDE NANOWIRE OPTOELECTRONICS.PROGRESS IN QUANTUM ELECTRONICS. VOL. 44. ISSUE . P. 14 -68 | 133 | 39% | 11 |
5 | ALLOING, B , ZUNIGA-PEREZ, J , (2016) METALORGANIC CHEMICAL VAPOR DEPOSITION OF GAN NANOWIRES: FROM CATALYST-ASSISTED TO CATALYST-FREE GROWTH, AND FROM SELF-ASSEMBLED TO SELECTIVE-AREA GROWTH.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 55. ISSUE . P. 51 -58 | 65 | 92% | 0 |
6 | TU, CG , SU, CY , LIAO, CH , HSIEH, C , YAO, YF , CHEN, HT , LIN, CH , WENG, CM , KIANG, YW , YANG, CC , (2016) REGULARLY PATTERNED MULTI-SECTION GAN NANOROD ARRAYS GROWN WITH A PULSED GROWTH TECHNIQUE.NANOTECHNOLOGY. VOL. 27. ISSUE 2. P. - | 47 | 100% | 2 |
7 | ZHANG, X , TU, CG , KIANG, YW , YANG, CC , (2017) STRUCTURE VARIATION OF A SIDEWALL QUANTUM WELL ON A GAN NANOROD.NANOTECHNOLOGY. VOL. 28. ISSUE 4. P. - | 49 | 96% | 0 |
8 | KENTE, T , MHLANGA, SD , (2016) GALLIUM NITRIDE NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS.JOURNAL OF CRYSTAL GROWTH. VOL. 444. ISSUE . P. 55 -72 | 67 | 69% | 0 |
9 | TU, CG , SU, CY , LIAO, CH , HSIEH, C , YAO, YF , CHEN, HT , LIN, CH , CHEN, HS , KIANG, YW , YANG, CC , (2015) REGULARLY-PATTERNED NANOROD LIGHT-EMITTING DIODE ARRAYS GROWN WITH METALORGANIC VAPOR-PHASE EPITAXY.SUPERLATTICES AND MICROSTRUCTURES. VOL. 83. ISSUE . P. 329 -341 | 47 | 89% | 4 |
10 | FERNANDEZ-GARRIDO, S , ZETTLER, JK , GEELHAAR, L , BRANDT, O , (2015) MONITORING THE FORMATION OF NANOWIRES BY LINE-OF-SIGHT QUADRUPOLE MASS SPECTROMETRY: A COMPREHENSIVE DESCRIPTION OF THE TEMPORAL EVOLUTION OF GAN NANOWIRE ENSEMBLES.NANO LETTERS. VOL. 15. ISSUE 3. P. 1930 -1937 | 44 | 73% | 12 |
Classes with closest relation at Level 1 |