Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
16944 | 626 | 22.2 | 83% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
16944 | 1 | ALINN//INALN//AL1 XINXN | 626 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ALINN | authKW | 672903 | 4% | 53% | 26 |
2 | INALN | authKW | 270956 | 3% | 28% | 20 |
3 | AL1 XINXN | authKW | 250853 | 1% | 86% | 6 |
4 | INALN FILMS | authKW | 146332 | 0% | 100% | 3 |
5 | RESONANT CAVITY LIGHT EMITTING DIODE RCLED | authKW | 121938 | 1% | 50% | 5 |
6 | ALXIN1 XN | authKW | 109747 | 0% | 75% | 3 |
7 | ALINN FILMS | authKW | 97555 | 0% | 100% | 2 |
8 | ALLNN | authKW | 97555 | 0% | 100% | 2 |
9 | ALXGA1 XN ALN | authKW | 97555 | 0% | 100% | 2 |
10 | ALXIN1 XN FILM | authKW | 97555 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 8628 | 74% | 0% | 461 |
2 | Materials Science, Multidisciplinary | 1046 | 30% | 0% | 190 |
3 | Physics, Condensed Matter | 938 | 22% | 0% | 136 |
4 | Crystallography | 538 | 8% | 0% | 53 |
5 | Optics | 257 | 10% | 0% | 61 |
6 | Engineering, Electrical & Electronic | 144 | 11% | 0% | 71 |
7 | Nanoscience & Nanotechnology | 55 | 4% | 0% | 26 |
8 | Materials Science, Coatings & Films | 37 | 2% | 0% | 14 |
9 | Materials Science, Characterization, Testing | 9 | 1% | 0% | 4 |
10 | Literature, Romance | 8 | 0% | 0% | 2 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANO OPTOELECT | 66950 | 1% | 15% | 9 |
2 | TEXAS SUPERCOND UNIV HOUSTON TCSUH | 65035 | 0% | 67% | 2 |
3 | DEP CIENCIA MAT IM QI | 62710 | 0% | 43% | 3 |
4 | SOLID STATE PHYS ELE ON MICROSCOPY | 62710 | 0% | 43% | 3 |
5 | SOLID STATE PHYS SEMICOND EPITAXY | 54871 | 0% | 38% | 3 |
6 | NANO OPTOELECT TECHNOL | 50802 | 1% | 21% | 5 |
7 | QUANTUM ELECT PHOTON | 50558 | 2% | 7% | 14 |
8 | NANODEVICE SYST | 49577 | 2% | 9% | 11 |
9 | ADA NANOFABRICAT IMAGING CHARACTERIZAT | 48777 | 0% | 100% | 1 |
10 | ALTY SCI TECHNOL | 48777 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 8303 | 22% | 0% | 137 |
2 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 6257 | 8% | 0% | 51 |
3 | JOURNAL OF CRYSTAL GROWTH | 3873 | 8% | 0% | 50 |
4 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 3507 | 1% | 1% | 6 |
5 | APPLIED PHYSICS EXPRESS | 3394 | 3% | 0% | 16 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS | 1891 | 4% | 0% | 25 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1016 | 3% | 0% | 16 |
8 | REVUE DES ETUDES ITALIENNES | 737 | 0% | 2% | 1 |
9 | JOURNAL OF APPLIED PHYSICS | 679 | 6% | 0% | 40 |
10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 596 | 2% | 0% | 10 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ALINN | 672903 | 4% | 53% | 26 | Search ALINN | Search ALINN |
2 | INALN | 270956 | 3% | 28% | 20 | Search INALN | Search INALN |
3 | AL1 XINXN | 250853 | 1% | 86% | 6 | Search AL1+XINXN | Search AL1+XINXN |
4 | INALN FILMS | 146332 | 0% | 100% | 3 | Search INALN+FILMS | Search INALN+FILMS |
5 | RESONANT CAVITY LIGHT EMITTING DIODE RCLED | 121938 | 1% | 50% | 5 | Search RESONANT+CAVITY+LIGHT+EMITTING+DIODE+RCLED | Search RESONANT+CAVITY+LIGHT+EMITTING+DIODE+RCLED |
6 | ALXIN1 XN | 109747 | 0% | 75% | 3 | Search ALXIN1+XN | Search ALXIN1+XN |
7 | ALINN FILMS | 97555 | 0% | 100% | 2 | Search ALINN+FILMS | Search ALINN+FILMS |
8 | ALLNN | 97555 | 0% | 100% | 2 | Search ALLNN | Search ALLNN |
9 | ALXGA1 XN ALN | 97555 | 0% | 100% | 2 | Search ALXGA1+XN+ALN | Search ALXGA1+XN+ALN |
10 | ALXIN1 XN FILM | 97555 | 0% | 100% | 2 | Search ALXIN1+XN+FILM | Search ALXIN1+XN+FILM |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | BUTTE, R , CARLIN, JF , FELTIN, E , GONSCHOREK, M , NICOLAY, S , CHRISTMANN, G , SIMEONOV, D , CASTIGLIA, A , DORSAZ, J , BUEHLMANN, HJ , ET AL (2007) CURRENT STATUS OF ALINN LAYERS LATTICE-MATCHED TO GAN FOR PHOTONICS AND ELECTRONICS.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 40. ISSUE 20. P. 6328 -6344 | 42 | 48% | 196 |
2 | PERILLAT-MERCEROZ, G , COSENDEY, G , CARLIN, JF , BUTTE, R , GRANDJEAN, N , (2013) INTRINSIC DEGRADATION MECHANISM OF NEARLY LATTICE-MATCHED INALN LAYERS GROWN ON GAN SUBSTRATES.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 6. P. - | 31 | 60% | 19 |
3 | IKEYAMA, K , KOZUKA, Y , MATSUI, K , YOSHIDA, S , AKAGI, T , AKATSUKA, Y , KOIDE, N , TAKEUCHI, T , KAMIYAMA, S , IWAYA, M , ET AL (2016) ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF GAN-BASED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH N-TYPE CONDUCTING ALLNN/GAN DISTRIBUTED BRAGG REFLECTORS.APPLIED PHYSICS EXPRESS. VOL. 9. ISSUE 10. P. - | 21 | 84% | 0 |
4 | GACEVIC, Z , ELJARRAT, A , PEIRO, F , CALLEJA, E , (2013) INSIGHT INTO HIGH-REFLECTIVITY ALN/GAN BRAGG REFLECTORS WITH SPONTANEOUSLY FORMED (AL,GA)N TRANSIENT LAYERS AT THE INTERFACES.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 18. P. - | 21 | 88% | 3 |
5 | CARLIN, JF , ZELLWEGER, C , DORSAZ, J , NICOLAY, S , CHRISTMANN, G , FELTIN, E , BUTTE, R , GRANDJEAN, N , (2005) PROGRESSES IN III-NITRIDE DISTRIBUTED BRAGG REFLECTORS AND MICROCAVITIES USING ALINN/GAN MATERIALS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 242. ISSUE 11. P. 2326-2344 | 26 | 72% | 106 |
6 | ZHANG, LL , LIU, ZH , HUANG, XG , LI, QF , ZHANG, R , XIE, ZL , XIU, XQ , (2014) PROPERTIES OF AN ALGAN/ALN DISTRIBUTED-BRAGG-REFLECTOR STRUCTURE.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 65. ISSUE 7. P. 1101 -1105 | 21 | 81% | 0 |
7 | AFZAL, N , DEVARAJAN, M , IBRAHIM, K , (2016) INFLUENCE OF SUBSTRATE TEMPERATURE ON THE GROWTH AND PROPERTIES OF REACTIVELY SPUTTERED IN-RICH INALN FILMS.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 27. ISSUE 5. P. 4281 -4289 | 22 | 73% | 0 |
8 | HAN, QF , DUAN, CH , DU, GP , SHI, WZ , JI, LC , (2010) MAGNETRON SPUTTER EPITAXY AND CHARACTERIZATION OF WURTZITE ALINN ON SI(111) SUBSTRATES.JOURNAL OF ELECTRONIC MATERIALS. VOL. 39. ISSUE 5. P. 489 -493 | 22 | 79% | 15 |
9 | IZUMI, S , FUUTAGAWA, N , HAMAGUCHI, T , MURAYAMA, M , KURAMOTO, M , NARUI, H , (2015) ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF GAN-BASED VERTICAL-CAVITY SURFACE-EMITTING LASERS FABRICATED USING EPITAXIAL LATERAL OVERGROWTH.APPLIED PHYSICS EXPRESS. VOL. 8. ISSUE 6. P. - | 15 | 88% | 10 |
10 | BUTTE, R , FELTIN, E , DORSAZ, J , CHRISTMANN, G , CARLIN, JF , GRANDJEAN, N , ILEGEMS, M , (2005) RECENT PROGRESS IN THE GROWTH OF HIGHLY REFLECTIVE NITRIDE-BASED DISTRIBUTED BRAGG REFLECTORS AND THEIR USE IN MICROCAVITIES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 44. ISSUE 10. P. 7207 -7216 | 33 | 56% | 50 |
Classes with closest relation at Level 1 |