Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
344 | 3613 | 22.3 | 83% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
344 | 1 | INGAN//EFFICIENCY DROOP//LIGHT EMITTING DIODES | 3613 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | INGAN | authKW | 1243359 | 10% | 40% | 367 |
2 | EFFICIENCY DROOP | authKW | 933289 | 4% | 85% | 130 |
3 | LIGHT EMITTING DIODES | authKW | 227275 | 9% | 8% | 318 |
4 | OPTOELECT MAT TECHNOL | address | 224443 | 3% | 27% | 97 |
5 | ELECTRON BLOCKING LAYER | authKW | 166369 | 1% | 62% | 32 |
6 | INGAN GAN MULTIPLE QUANTUM WELLS | authKW | 128481 | 1% | 72% | 21 |
7 | INGAN GAN | authKW | 113576 | 1% | 33% | 41 |
8 | ELECTRON BLOCKING LAYER EBL | authKW | 105616 | 0% | 83% | 15 |
9 | LIGHT EMITTING DIODES LEDS | authKW | 103350 | 2% | 15% | 82 |
10 | QUANTUM WELLS | authKW | 92426 | 6% | 5% | 202 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 36485 | 64% | 0% | 2296 |
2 | Physics, Condensed Matter | 6750 | 24% | 0% | 866 |
3 | Materials Science, Multidisciplinary | 3391 | 24% | 0% | 859 |
4 | Optics | 2655 | 12% | 0% | 451 |
5 | Engineering, Electrical & Electronic | 1400 | 14% | 0% | 500 |
6 | Crystallography | 1083 | 5% | 0% | 191 |
7 | Physics, Multidisciplinary | 726 | 8% | 0% | 295 |
8 | Nanoscience & Nanotechnology | 389 | 4% | 0% | 162 |
9 | Materials Science, Coatings & Films | 141 | 2% | 0% | 69 |
10 | Microscopy | 124 | 1% | 0% | 27 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OPTOELECT MAT TECHNOL | 224443 | 3% | 27% | 97 |
2 | NITRIDE SEMICOND | 71589 | 1% | 31% | 27 |
3 | MAT E ORAT STRUCT STUDIES CEMES | 59148 | 0% | 100% | 7 |
4 | ENGN TECHNOL LED SI SUBSTRATE | 52891 | 0% | 52% | 12 |
5 | RD SEMICOND LIGHTING | 52803 | 0% | 63% | 10 |
6 | FUTURE CHIPS CONSTELLAT | 51935 | 0% | 36% | 17 |
7 | CHINA BRANCH | 49157 | 0% | 73% | 8 |
8 | DEV SEMICOND LIGHTING | 48693 | 0% | 41% | 14 |
9 | NANOPHOTON FUNCT MAT DEVICES | 47434 | 1% | 14% | 41 |
10 | LUMINOUS EXCELLENCE SEMICOND LIGHTING DISPL | 43955 | 1% | 19% | 27 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 56861 | 2% | 12% | 58 |
2 | APPLIED PHYSICS LETTERS | 40171 | 20% | 1% | 725 |
3 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 12625 | 5% | 1% | 175 |
4 | JOURNAL OF DISPLAY TECHNOLOGY | 10897 | 1% | 3% | 41 |
5 | JOURNAL OF CRYSTAL GROWTH | 8858 | 5% | 1% | 183 |
6 | JOURNAL OF APPLIED PHYSICS | 7514 | 9% | 0% | 315 |
7 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 6982 | 4% | 1% | 129 |
8 | APPLIED PHYSICS EXPRESS | 5929 | 1% | 1% | 51 |
9 | SEMICONDUCTORS | 5355 | 2% | 1% | 66 |
10 | SUPERLATTICES AND MICROSTRUCTURES | 4075 | 2% | 1% | 56 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | INGAN | 1243359 | 10% | 40% | 367 | Search INGAN | Search INGAN |
2 | EFFICIENCY DROOP | 933289 | 4% | 85% | 130 | Search EFFICIENCY+DROOP | Search EFFICIENCY+DROOP |
3 | LIGHT EMITTING DIODES | 227275 | 9% | 8% | 318 | Search LIGHT+EMITTING+DIODES | Search LIGHT+EMITTING+DIODES |
4 | ELECTRON BLOCKING LAYER | 166369 | 1% | 62% | 32 | Search ELECTRON+BLOCKING+LAYER | Search ELECTRON+BLOCKING+LAYER |
5 | INGAN GAN MULTIPLE QUANTUM WELLS | 128481 | 1% | 72% | 21 | Search INGAN+GAN+MULTIPLE+QUANTUM+WELLS | Search INGAN+GAN+MULTIPLE+QUANTUM+WELLS |
6 | INGAN GAN | 113576 | 1% | 33% | 41 | Search INGAN+GAN | Search INGAN+GAN |
7 | ELECTRON BLOCKING LAYER EBL | 105616 | 0% | 83% | 15 | Search ELECTRON+BLOCKING+LAYER+EBL | Search ELECTRON+BLOCKING+LAYER+EBL |
8 | LIGHT EMITTING DIODES LEDS | 103350 | 2% | 15% | 82 | Search LIGHT+EMITTING+DIODES+LEDS | Search LIGHT+EMITTING+DIODES+LEDS |
9 | QUANTUM WELLS | 92426 | 6% | 5% | 202 | Search QUANTUM+WELLS | Search QUANTUM+WELLS |
10 | GAINN | 90858 | 1% | 49% | 22 | Search GAINN | Search GAINN |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | VERZELLESI, G , SAGUATTI, D , MENEGHINI, M , BERTAZZI, F , GOANO, M , MENEGHESSO, G , ZANONI, E , (2013) EFFICIENCY DROOP IN INGAN/GAN BLUE LIGHT-EMITTING DIODES: PHYSICAL MECHANISMS AND REMEDIES.JOURNAL OF APPLIED PHYSICS. VOL. 114. ISSUE 7. P. - | 76 | 90% | 103 |
2 | ZHANG, ZH , ZHANG, YH , BI, WG , DEMIR, HV , SUN, XW , (2016) ON THE INTERNAL QUANTUM EFFICIENCY FOR INGAN/GAN LIGHT-EMITTING DIODES GROWN ON INSULATING SUBSTRATES.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 213. ISSUE 12. P. 3078 -3102 | 125 | 78% | 0 |
3 | CHO, J , SCHUBERT, EF , KIM, JK , (2013) EFFICIENCY DROOP IN LIGHT-EMITTING DIODES: CHALLENGES AND COUNTERMEASURES.LASER & PHOTONICS REVIEWS. VOL. 7. ISSUE 3. P. 408-421 | 70 | 82% | 99 |
4 | PIPREK, J , (2010) EFFICIENCY DROOP IN NITRIDE-BASED LIGHT-EMITTING DIODES.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 207. ISSUE 10. P. 2217 -2225 | 48 | 87% | 336 |
5 | DAMILANO, B , GIL, B , (2015) YELLOW-RED EMISSION FROM (GA,IN)N HETEROSTRUCTURES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 48. ISSUE 40. P. - | 103 | 53% | 8 |
6 | ZHAO, HP , LIU, GY , ZHANG, J , POPLAWSKY, JD , DIEROLF, V , TANSU, N , (2011) APPROACHES FOR HIGH INTERNAL QUANTUM EFFICIENCY GREEN INGAN LIGHT-EMITTING DIODES WITH LARGE OVERLAP QUANTUM WELLS.OPTICS EXPRESS. VOL. 19. ISSUE 14. P. A991 -A1007 | 56 | 62% | 348 |
7 | SHIM, JI , (2013) ACTIVE REGION PART B. INTERNAL QUANTUM EFFICIENCY.III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS. VOL. 126. ISSUE . P. 153 -195 | 77 | 79% | 0 |
8 | AVRUTIN, V , HAFIZ, SDA , ZHANG, F , OZGUR, U , MORKOC, H , MATULIONIS, A , (2013) INGAN LIGHT-EMITTING DIODES: EFFICIENCY-LIMITING PROCESSES AT HIGH INJECTION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 31. ISSUE 5. P. - | 52 | 90% | 19 |
9 | CALCIATI, M , GOANO, M , BERTAZZI, F , VALLONE, M , ZHOU, XY , GHIONE, G , MENEGHINI, M , MENEGHESSO, G , ZANONI, E , BELLOTTI, E , ET AL (2014) CORRELATING ELECTROLUMINESCENCE CHARACTERIZATION AND PHYSICS-BASED MODELS OF INGAN/GAN LEDS: PITFALLS AND OPEN ISSUES.AIP ADVANCES. VOL. 4. ISSUE 6. P. - | 69 | 69% | 7 |
10 | DAVIES, MJ , HAMMERSLEY, S , MASSABUAU, FCP , DAWSON, P , OLIVER, RA , KAPPERS, MJ , HUMPHREYS, CJ , (2016) A COMPARISON OF THE OPTICAL PROPERTIES OF INGAN/GAN MULTIPLE QUANTUM WELL STRUCTURES GROWN WITH AND WITHOUT SI-DOPED INGAN PRELAYERS.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 5. P. - | 44 | 86% | 2 |
Classes with closest relation at Level 1 |