Class information for:
Level 2: SILICON CARBIDE//4H SIC//SIC

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
671 13252 20.3 68%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
628 3       SILICON CARBIDE//4H SIC//SIC 13252
671 2             SILICON CARBIDE//4H SIC//SIC 13252
2541 1                   MICROPIPE//SUBLIMATION GROWTH//SEMICONDUCTING SILICON COMPOUNDS 2213
2631 1                   PHYS MEASUREMENT TECHNOL//MATERIALS SCIENCE FORUM//4H SIC 2191
5206 1                   SIC NANOWIRES//SILICON CARBIDE NANOWIRES//CARBOTHERMAL REDUCTION 1657
5987 1                   4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE 1547
7015 1                   3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL 1415
7583 1                   SICF SIC COMPOSITES//SIC SIC COMPOSITE//ADV ENERGY 1351
9042 1                   OHMIC CONTACT//4H SIC//EDGE TERMINATION 1193
15708 1                   SIMA//HEXAGONAL SURFACES//SIC0001 697
23247 1                   METHYLTRICHLOROSILANE//HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION//ADV FIB COMPOSIT 353
24234 1                   MESFET//4H SIC MESFET//SIC MESFET 319
26620 1                   ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS 250
37133 1                   SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC 66

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 SILICON CARBIDE authKW 1344849 12% 36% 1633
2 4H SIC authKW 899875 4% 82% 477
3 SIC authKW 716678 8% 31% 1015
4 MATERIALS SCIENCE FORUM journal 419964 13% 10% 1785
5 3C SIC authKW 374440 1% 82% 198
6 6H SIC authKW 328376 1% 72% 197
7 MICROPIPE authKW 221061 1% 87% 110
8 PHYS MEASUREMENT TECHNOL address 166571 3% 21% 338
9 SILICON CARBIDE SIC authKW 160363 1% 44% 158
10 SEMICONDUCTING SILICON COMPOUNDS authKW 127116 1% 54% 103

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Materials Science, Multidisciplinary 42973 41% 0% 5388
2 Physics, Applied 42824 37% 0% 4969
3 Physics, Condensed Matter 23382 23% 0% 3096
4 Materials Science, Coatings & Films 23122 10% 1% 1310
5 Materials Science, Characterization, Testing 17483 5% 1% 620
6 Nuclear Science & Technology 6595 7% 0% 959
7 Engineering, Electrical & Electronic 6387 15% 0% 1999
8 Materials Science, Ceramics 4447 4% 0% 526
9 Crystallography 3278 5% 0% 645
10 Nanoscience & Nanotechnology 1879 5% 0% 661

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 PHYS MEASUREMENT TECHNOL 166571 3% 21% 338
2 ADV POWER DEVICE 55340 0% 96% 25
3 ETUD SEMICOND GRP 52586 1% 21% 110
4 MAT SCI 6 48385 0% 38% 56
5 FG NANOTECHNOL 38046 0% 72% 23
6 ULTRA LOW LOSS POWER DEVICE TECHNOL BODY 37293 0% 90% 18
7 RD ASSOC FUTURE ELE ON DEVICES 36506 0% 55% 29
8 WIDE BAND G SEMICOND MAT DEVICES 31337 1% 19% 71
9 MULTIMAT INTER ES 28938 1% 14% 90
10 POWER SEMICOND 28753 0% 50% 25

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 MATERIALS SCIENCE FORUM 419964 13% 10% 1785
2 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 23243 2% 4% 275
3 JOURNAL OF NUCLEAR MATERIALS 16812 3% 2% 387
4 JOURNAL OF CRYSTAL GROWTH 16348 4% 2% 480
5 INSTITUTE OF PHYSICS CONFERENCE SERIES 13321 2% 2% 241
6 JOURNAL OF ELECTRONIC MATERIALS 12375 2% 2% 232
7 JOURNAL OF APPLIED PHYSICS 10894 6% 1% 743
8 IEEE ELECTRON DEVICE LETTERS 10713 2% 2% 208
9 APPLIED PHYSICS LETTERS 9736 5% 1% 718
10 IEEE TRANSACTIONS ON ELECTRON DEVICES 9505 2% 2% 256

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class		 LCSH search Wikipedia search
1 SILICON CARBIDE 1344849 12% 36% 1633 Search SILICON+CARBIDE Search SILICON+CARBIDE
2 4H SIC 899875 4% 82% 477 Search 4H+SIC Search 4H+SIC
3 SIC 716678 8% 31% 1015 Search SIC Search SIC
4 3C SIC 374440 1% 82% 198 Search 3C+SIC Search 3C+SIC
5 6H SIC 328376 1% 72% 197 Search 6H+SIC Search 6H+SIC
6 MICROPIPE 221061 1% 87% 110 Search MICROPIPE Search MICROPIPE
7 SILICON CARBIDE SIC 160363 1% 44% 158 Search SILICON+CARBIDE+SIC Search SILICON+CARBIDE+SIC
8 SEMICONDUCTING SILICON COMPOUNDS 127116 1% 54% 103 Search SEMICONDUCTING+SILICON+COMPOUNDS Search SEMICONDUCTING+SILICON+COMPOUNDS
9 SUBLIMATION GROWTH 121756 1% 77% 69 Search SUBLIMATION+GROWTH Search SUBLIMATION+GROWTH
10 SIC NANOWIRES 82347 0% 62% 58 Search SIC+NANOWIRES Search SIC+NANOWIRES

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 KIMOTO, T , (2015) MATERIAL SCIENCE AND DEVICE PHYSICS IN SIC TECHNOLOGY FOR HIGH-VOLTAGE POWER DEVICES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 4. P. - 213 96% 34
2 WU, RB , ZHOU, K , YUE, CY , WEI, J , PAN, Y , (2015) RECENT PROGRESS IN SYNTHESIS, PROPERTIES AND POTENTIAL APPLICATIONS OF SIC NANOMATERIALS.PROGRESS IN MATERIALS SCIENCE. VOL. 72. ISSUE . P. 1 -60 228 66% 38
3 KIMOTO, T , (2016) BULK AND EPITAXIAL GROWTH OF SILICON CARBIDE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 62. ISSUE 2. P. 329 -351 160 99% 1
4 WANG, ZT , LIU, W , WANG, CQ , (2016) RECENT PROGRESS IN OHMIC CONTACTS TO SILICON CARBIDE FOR HIGH-TEMPERATURE APPLICATIONS.JOURNAL OF ELECTRONIC MATERIALS. VOL. 45. ISSUE 1. P. 267 -284 144 92% 3
5 PRESSER, V , NICKEL, KG , (2008) SILICA ON SILICON CARBIDE.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 33. ISSUE 1. P. 1 -99 243 59% 61
6 PEDERSEN, H , LEONE, S , KORDINA, O , HENRY, A , NISHIZAWA, S , KOSHKA, Y , JANZEN, E , (2012) CHLORIDE-BASED CVD GROWTH OF SILICON CARBIDE FOR ELECTRONIC APPLICATIONS.CHEMICAL REVIEWS. VOL. 112. ISSUE 4. P. 2434 -2453 129 97% 28
7 LA VIA, F , CAMARDA, M , LA MAGNA, A , (2014) MECHANISMS OF GROWTH AND DEFECT PROPERTIES OF EPITAXIAL SIC.APPLIED PHYSICS REVIEWS. VOL. 1. ISSUE 3. P. - 129 91% 6
8 KALININA, EV , (2007) THE EFFECT OF IRRADIATION ON THE PROPERTIES OF SIC AND DEVICES BASED ON THIS COMPOUND.SEMICONDUCTORS. VOL. 41. ISSUE 7. P. 745 -783 153 93% 13
9 FISSEL, A , (2003) ARTIFICIALLY LAYERED HETEROPOLYTYPIC STRUCTURES BASED ON SIC POLYTYPES: MOLECULAR BEAM EPITAXY, CHARACTERIZATION AND PROPERTIES.PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS. VOL. 379. ISSUE 3-4. P. 149 -255 182 68% 120
10 CASADY, JB , JOHNSON, RW , (1996) STATUS OF SILICON CARBIDE (SIC) AS A WIDE-BANDGAP SEMICONDUCTOR FOR HIGH-TEMPERATURE APPLICATIONS: A REVIEW.SOLID-STATE ELECTRONICS. VOL. 39. ISSUE 10. P. 1409-1422 117 82% 628

Classes with closest relation at Level 2


Rank Class id link
1 901 CARBON CARBON COMPOSITES//CERAMIC MATRIX COMPOSITES//C C COMPOSITES
2 2975 PULSE TRANSFORMER//MARX GENERATOR//PULSED POWER
3 3506 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY
4 434 MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON
5 3018 HYDROGEN SENSOR//MICROHOTPLATE//S SENCE
6 3299 THALLIUM BROMIDE//MERCURIC IODIDE//TLBR
7 20 GAN//GALLIUM NITRIDE//NITRIDES
8 2000 ZIRCONIA//ZRO2//ZIRCONIUM TITANATE
9 115 MATERIALS SCIENCE, CERAMICS//JOURNAL OF THE AMERICAN CERAMIC SOCIETY//JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
10 899 SURFACE SCIENCE//SILICON//SCANNING TUNNELING MICROSCOPY

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