Class information for:
Level 3: GAN//PHYSICS, APPLIED//GALLIUM NITRIDE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
178 57874 21.6 71%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
816 2             LEAD FREE SOLDER//SOLDER//SOLDERING & SURFACE MOUNT TECHNOLOGY 11969
2485 2             ELECTROMIGRATION//ELECTROMIGRATION EM//SOLID STATE DEWETTING 3937
2642 2             THROUGH SILICON VIA TSV//WAFER BONDING//THROUGH SILICON VIA 3496
3252 2             JUNCTION TEMPERATURE//COMPACT THERMAL MODEL//DYNAMIC THERMAL MANAGEMENT 1976

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 GAN authKW 1601946 7% 80% 3835
2 PHYSICS, APPLIED WoSSC 426621 55% 3% 31723
3 GALLIUM NITRIDE authKW 421628 2% 73% 1094
4 LEAD FREE SOLDER authKW 398639 2% 82% 929
5 NITRIDES authKW 394200 3% 44% 1728
6 INGAN authKW 377648 1% 89% 811
7 ALGAN authKW 273289 1% 87% 600
8 SOLDER authKW 269094 1% 67% 765
9 JOURNAL OF ELECTRONIC MATERIALS journal 225830 4% 21% 2052
10 LIGHT EMITTING DIODES authKW 193558 2% 31% 1180

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 426621 55% 3% 31723
2 Materials Science, Multidisciplinary 144744 36% 2% 20955
3 Engineering, Electrical & Electronic 104506 26% 2% 15263
4 Physics, Condensed Matter 60111 19% 1% 10707
5 Nanoscience & Nanotechnology 40276 10% 2% 5637
6 Materials Science, Coatings & Films 20364 5% 2% 2730
7 Crystallography 19393 6% 1% 3212
8 Engineering, Manufacturing 13884 3% 2% 1706
9 Metallurgy & Metallurgical Engineering 13774 6% 1% 3520
10 Optics 5834 6% 1% 3262

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 CRHEA 91294 1% 59% 293
2 MICROELECT 85990 3% 10% 1698
3 SEMICOND 77197 2% 14% 1057
4 MAT SCI ENGN 68987 11% 2% 6290
5 AKASAKI 60018 0% 96% 119
6 STATE ARTIFICIAL MICROSTRUCT MESOSCOP P 53598 0% 43% 240
7 ADV OPTOELECT TECHNOL 43141 1% 22% 384
8 SEMICOND SCI TECHNOL 40933 0% 43% 180
9 ELECT ENGN 37370 8% 2% 4369
10 ELECT COMP ENGN 37316 6% 2% 3513

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 JOURNAL OF ELECTRONIC MATERIALS 225830 4% 21% 2052
2 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 192838 1% 86% 428
3 MICROELECTRONICS RELIABILITY 178804 3% 22% 1542
4 APPLIED PHYSICS LETTERS 174111 11% 6% 6138
5 SOLDERING & SURFACE MOUNT TECHNOLOGY 136371 1% 82% 317
6 JOURNAL OF CRYSTAL GROWTH 133773 5% 9% 2848
7 JOURNAL OF ELECTRONIC PACKAGING 120603 1% 43% 533
8 IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES 95411 1% 40% 458
9 IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 91032 1% 36% 483
10 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 51328 2% 7% 1431

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class		 LCSH search Wikipedia search
1 GAN 1601946 7% 80% 3835 Search GAN Search GAN
2 GALLIUM NITRIDE 421628 2% 73% 1094 Search GALLIUM+NITRIDE Search GALLIUM+NITRIDE
3 LEAD FREE SOLDER 398639 2% 82% 929 Search LEAD+FREE+SOLDER Search LEAD+FREE+SOLDER
4 NITRIDES 394200 3% 44% 1728 Search NITRIDES Search NITRIDES
5 INGAN 377648 1% 89% 811 Search INGAN Search INGAN
6 ALGAN 273289 1% 87% 600 Search ALGAN Search ALGAN
7 SOLDER 269094 1% 67% 765 Search SOLDER Search SOLDER
8 LIGHT EMITTING DIODES 193558 2% 31% 1180 Search LIGHT+EMITTING+DIODES Search LIGHT+EMITTING+DIODES
9 GALLIUM COMPOUNDS 178039 1% 47% 720 Search GALLIUM+COMPOUNDS Search GALLIUM+COMPOUNDS
10 ELECTROMIGRATION 177555 1% 55% 613 Search ELECTROMIGRATION Search ELECTROMIGRATION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 RESHCHIKOV, MA , MORKOC, H , (2005) LUMINESCENCE PROPERTIES OF DEFECTS IN GAN.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 6. P. - 406 85% 825
2 LI, GQ , WANG, WL , YANG, WJ , LIN, YH , WANG, HY , LIN, ZT , ZHOU, SZ , (2016) GAN-BASED LIGHT-EMITTING DIODES ON VARIOUS SUBSTRATES: A CRITICAL REVIEW.REPORTS ON PROGRESS IN PHYSICS. VOL. 79. ISSUE 5. P. - 277 95% 4
3 PEARTON, SJ , ZOLPER, JC , SHUL, RJ , REN, F , (1999) GAN: PROCESSING, DEFECTS, AND DEVICES.JOURNAL OF APPLIED PHYSICS. VOL. 86. ISSUE 1. P. 1 -78 321 76% 1082
4 WU, JQ , (2009) WHEN GROUP-III NITRIDES GO INFRARED: NEW PROPERTIES AND PERSPECTIVES.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 1. P. - 225 87% 447
5 POLYAKOV, AY , LEE, IH , (2015) DEEP TRAPS IN GAN-BASED STRUCTURES AS AFFECTING THE PERFORMANCE OF GAN DEVICES.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 94. ISSUE . P. 1 -56 282 89% 14
6 VURGAFTMAN, I , MEYER, JR , (2003) BAND PARAMETERS FOR NITROGEN-CONTAINING SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 94. ISSUE 6. P. 3675 -3696 235 64% 1557
7 LIU, L , EDGAR, JH , (2002) SUBSTRATES FOR GALLIUM NITRIDE EPITAXY.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 37. ISSUE 3. P. 61 -127 287 83% 449
8 ZUNIGA-PEREZ, J , CONSONNI, V , LYMPERAKIS, L , KONG, X , TRAMPERT, A , FERNANDEZ-GARRIDO, S , BRANDT, O , RENEVIER, H , KELLER, S , HESTROFFER, K , ET AL (2016) POLARITY IN GAN AND ZNO: THEORY, MEASUREMENT, GROWTH, AND DEVICES.APPLIED PHYSICS REVIEWS. VOL. 3. ISSUE 4. P. - 425 61% 0
9 ZHAO, SR , NGUYEN, HPT , KIBRIA, MG , MI, ZT , (2015) III-NITRIDE NANOWIRE OPTOELECTRONICS.PROGRESS IN QUANTUM ELECTRONICS. VOL. 44. ISSUE . P. 14 -68 272 80% 11
10 WANG, XQ , YOSHIKAWA, A , (2004) MOLECULAR BEAM EPITAXY GROWTH OF GAN, AIN AND INN.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 48-9. ISSUE . P. 42 -103 306 94% 86

Classes with closest relation at Level 3


Rank Class id link
1 628 SILICON CARBIDE//4H SIC//SIC
2 117 MATERIALS SCIENCE, CERAMICS//ELECT ENGN OPTOELECT TECHNOL//JOURNAL OF THE AMERICAN CERAMIC SOCIETY
3 215 ZNO//ZINC OXIDE//GAS SENSOR
4 47 PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER
5 660 BEIJING NANOENERGY NANOSYST//TRIBOELECTRIC NANOGENERATOR//NANOGENERATOR
6 6 PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON
7 508 ELECTRONIC NOSE//SENSORS AND ACTUATORS B-CHEMICAL//HUMIDITY SENSOR
8 376 SENSORS AND ACTUATORS A-PHYSICAL//JOURNAL OF MICROELECTROMECHANICAL SYSTEMS//MEMS
9 589 ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS
10 378 SURFACE & COATINGS TECHNOLOGY//HIGH ENTROPY ALLOY//MATERIALS SCIENCE, COATINGS & FILMS

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