Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
21167 | 430 | 21.0 | 70% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
21167 | 1 | GAN ON DIAMOND//DEVICE THERMOG RELIABIL//CHANNEL TEMPERATURE | 430 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAN ON DIAMOND | authKW | 365201 | 1% | 86% | 6 |
2 | DEVICE THERMOG RELIABIL | address | 292146 | 3% | 34% | 12 |
3 | CHANNEL TEMPERATURE | authKW | 273891 | 2% | 43% | 9 |
4 | THERMAL BOUNDARY RESISTANCE TBR | authKW | 161384 | 1% | 45% | 5 |
5 | RAMAN THERMOGRAPHY | authKW | 159774 | 1% | 75% | 3 |
6 | HIGH ELECTRON MOBILITY TRANSISTORS HEMTS | authKW | 158643 | 4% | 12% | 18 |
7 | BUILT IN POLARIZATION FIELD | authKW | 142023 | 0% | 100% | 2 |
8 | GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS HFETS | authKW | 142023 | 0% | 100% | 2 |
9 | GANHFETS | authKW | 142023 | 0% | 100% | 2 |
10 | QUASI MONOLITHIC INTEGRATION TECHNOLOGY | authKW | 142023 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 3844 | 60% | 0% | 258 |
2 | Engineering, Electrical & Electronic | 2523 | 45% | 0% | 194 |
3 | Materials Science, Multidisciplinary | 312 | 21% | 0% | 92 |
4 | Physics, Condensed Matter | 299 | 16% | 0% | 67 |
5 | Nanoscience & Nanotechnology | 240 | 9% | 0% | 38 |
6 | Engineering, Manufacturing | 36 | 2% | 0% | 8 |
7 | Telecommunications | 17 | 2% | 0% | 10 |
8 | Materials Science, Coatings & Films | 11 | 2% | 0% | 7 |
9 | Crystallography | 8 | 2% | 0% | 8 |
10 | Physics, Multidisciplinary | 5 | 3% | 0% | 15 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | DEVICE THERMOG RELIABIL | 292146 | 3% | 34% | 12 |
2 | DEF POWER BUSINESS UNIT | 94681 | 0% | 67% | 2 |
3 | GAAS | 94681 | 0% | 67% | 2 |
4 | SENMC | 94681 | 0% | 67% | 2 |
5 | CNRSUMI 3463 | 71012 | 0% | 100% | 1 |
6 | COMMON TRT IEMN | 71012 | 0% | 100% | 1 |
7 | DIRECTORATE PHYS ELECT | 71012 | 0% | 100% | 1 |
8 | DPTO INGN ELECT SISTEMAS OPTOELECT MICRO | 71012 | 0% | 100% | 1 |
9 | EDUC WIDE BAND G SEMICOND MAT DEVICES | 71012 | 0% | 100% | 1 |
10 | ELECT DEVICES CIRCUITS EBS | 71012 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 11205 | 11% | 0% | 49 |
2 | MICROELECTRONICS RELIABILITY | 4078 | 5% | 0% | 20 |
3 | IEEE ELECTRON DEVICE LETTERS | 3792 | 5% | 0% | 22 |
4 | DIAMOND AND RELATED MATERIALS | 2497 | 4% | 0% | 16 |
5 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 1652 | 1% | 0% | 5 |
6 | SOLID-STATE ELECTRONICS | 1600 | 3% | 0% | 15 |
7 | APPLIED PHYSICS LETTERS | 1258 | 10% | 0% | 45 |
8 | JOURNAL OF APPLIED PHYSICS | 1247 | 10% | 0% | 44 |
9 | INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES | 1015 | 1% | 0% | 3 |
10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 876 | 2% | 0% | 10 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | KUBALL, M , POMEROY, JW , (2016) A REVIEW OF RAMAN THERMOGRAPHY FOR ELECTRONIC AND OPTO-ELECTRONIC DEVICE MEASUREMENT WITH SUBMICRON SPATIAL AND NANOSECOND TEMPORAL RESOLUTION.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 16. ISSUE 4. P. 667 -684 | 41 | 60% | 0 |
2 | DARWISH, A , BAYBA, AJ , HUNG, HA , (2015) CHANNEL TEMPERATURE ANALYSIS OF GAN HEMTS WITH NONLINEAR THERMAL CONDUCTIVITY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 3. P. 840 -846 | 18 | 75% | 9 |
3 | BARMAN, S , GANGULY, A , BARMAN, A , (2012) PHONON HEAT CONDUCTION IN ALXGA1-XN FILM.EPL. VOL. 97. ISSUE 3. P. - | 21 | 78% | 0 |
4 | WANG, A , TADJER, MJ , CALLE, F , (2013) SIMULATION OF THERMAL MANAGEMENT IN ALGAN/GAN HEMTS WITH INTEGRATED DIAMOND HEAT SPREADERS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 28. ISSUE 5. P. - | 18 | 82% | 12 |
5 | SRIVASTAVA, GP , ALSHAIKHI, A , BARMAN, S , (2010) THEORY OF THE LATTICE THERMAL CONDUCTIVITY IN BULK AND FILMS OF GAN.PHYSICAL REVIEW B. VOL. 81. ISSUE 19. P. - | 17 | 71% | 15 |
6 | HIRAMA, K , TANIYASU, Y , KASU, M , (2012) EPITAXIAL GROWTH OF ALGAN/GAN HIGH-ELECTRON MOBILITY TRANSISTOR STRUCTURE ON DIAMOND (111) SURFACE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 9. P. - | 18 | 64% | 2 |
7 | PAVLIDIS, G , PAVLIDIS, S , HELLER, ER , MOORE, EA , VETURY, R , GRAHAM, S , (2017) CHARACTERIZATION OF ALGAN/GAN HEMTS USING GATE RESISTANCE THERMOMETRY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 64. ISSUE 1. P. 78 -83 | 12 | 86% | 0 |
8 | SZTEIN, A , HABERSTROH, J , BOWERS, JE , DENBAARS, SP , NAKAMURA, S , (2013) CALCULATED THERMOELECTRIC PROPERTIES OF INXGA1-XN, INXAL1-XN, AND ALXGA1-XN.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 18. P. - | 19 | 50% | 14 |
9 | LO, CF , REN, F , PEARTON, SJ , POLYAKOV, AY , SMIRNOV, NB , GOVORKOV, AV , BELOGOROKHOV, IA , BELOGOROKHOV, AI , REZNIK, VY , JOHNSON, JW , (2011) DEEP TRAPS AND THERMAL MEASUREMENTS ON ALGAN/GAN ON SI TRANSISTORS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 29. ISSUE 4. P. - | 16 | 67% | 1 |
10 | BABIC, DI , (2014) OPTIMAL ALGAN/GAN HEMT BUFFER LAYER THICKNESS IN THE PRESENCE OF AN EMBEDDED THERMAL BOUNDARY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 4. P. 1047 -1053 | 12 | 80% | 2 |
Classes with closest relation at Level 1 |