Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
8875 | 1209 | 21.9 | 79% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
8875 | 1 | GAN//AMORPHOUS GAN//GAGDN | 1209 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAN | authKW | 173172 | 15% | 4% | 182 |
2 | AMORPHOUS GAN | authKW | 161629 | 1% | 80% | 8 |
3 | GAGDN | authKW | 126275 | 0% | 100% | 5 |
4 | RARE EARTH IMPLANTATION | authKW | 126275 | 0% | 100% | 5 |
5 | GAN NANOCRYSTALLITE | authKW | 101020 | 0% | 100% | 4 |
6 | EUROPEAN OFF | address | 83541 | 1% | 22% | 15 |
7 | SOLID STATE OPTOELECT | address | 80815 | 0% | 80% | 4 |
8 | EU DOPED GAN | authKW | 75765 | 0% | 100% | 3 |
9 | NANOELECT | address | 70248 | 5% | 4% | 64 |
10 | CONDENSED MATTER SUR E SCI PROGRAM | address | 53914 | 2% | 11% | 19 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 7646 | 51% | 0% | 617 |
2 | Physics, Condensed Matter | 2795 | 26% | 0% | 319 |
3 | Materials Science, Multidisciplinary | 1478 | 27% | 0% | 321 |
4 | Nuclear Science & Technology | 625 | 7% | 0% | 89 |
5 | Physics, Nuclear | 584 | 7% | 0% | 88 |
6 | Instruments & Instrumentation | 467 | 7% | 0% | 84 |
7 | Physics, Atomic, Molecular & Chemical | 299 | 7% | 0% | 90 |
8 | Optics | 271 | 8% | 0% | 92 |
9 | Materials Science, Coatings & Films | 188 | 3% | 0% | 40 |
10 | Engineering, Electrical & Electronic | 81 | 8% | 0% | 91 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | EUROPEAN OFF | 83541 | 1% | 22% | 15 |
2 | SOLID STATE OPTOELECT | 80815 | 0% | 80% | 4 |
3 | NANOELECT | 70248 | 5% | 4% | 64 |
4 | CONDENSED MATTER SUR E SCI PROGRAM | 53914 | 2% | 11% | 19 |
5 | KAWAGOE WORKS | 50510 | 0% | 100% | 2 |
6 | SEMICOND TECHNOL HEADQUARTERS | 50510 | 0% | 100% | 2 |
7 | CHAIR MAT PHYS | 50506 | 0% | 50% | 4 |
8 | GRP MAT ENGN SUPERFICIES | 37133 | 0% | 29% | 5 |
9 | MICROFABRITECH | 36358 | 0% | 24% | 6 |
10 | STOCKER | 32554 | 1% | 18% | 7 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 26730 | 2% | 5% | 23 |
2 | APPLIED PHYSICS LETTERS | 9160 | 17% | 0% | 201 |
3 | OPTICAL MATERIALS | 5894 | 3% | 1% | 39 |
4 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 5273 | 7% | 0% | 82 |
5 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 3689 | 3% | 0% | 33 |
6 | JOURNAL OF APPLIED PHYSICS | 3291 | 10% | 0% | 120 |
7 | TOPICS IN APPLIED PHYSICS | 2690 | 1% | 1% | 10 |
8 | OPTICAL MATERIALS EXPRESS | 1542 | 1% | 1% | 10 |
9 | JOURNAL OF ELECTRONIC MATERIALS | 1458 | 2% | 0% | 24 |
10 | SEMICONDUCTORS | 1321 | 2% | 0% | 19 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAN | 173172 | 15% | 4% | 182 | Search GAN | Search GAN |
2 | AMORPHOUS GAN | 161629 | 1% | 80% | 8 | Search AMORPHOUS+GAN | Search AMORPHOUS+GAN |
3 | GAGDN | 126275 | 0% | 100% | 5 | Search GAGDN | Search GAGDN |
4 | RARE EARTH IMPLANTATION | 126275 | 0% | 100% | 5 | Search RARE+EARTH+IMPLANTATION | Search RARE+EARTH+IMPLANTATION |
5 | GAN NANOCRYSTALLITE | 101020 | 0% | 100% | 4 | Search GAN+NANOCRYSTALLITE | Search GAN+NANOCRYSTALLITE |
6 | EU DOPED GAN | 75765 | 0% | 100% | 3 | Search EU+DOPED+GAN | Search EU+DOPED+GAN |
7 | AMMONIFICATION METHOD | 50510 | 0% | 100% | 2 | Search AMMONIFICATION+METHOD | Search AMMONIFICATION+METHOD |
8 | COMPOUND SOURCE MAGNETRON SPUTTERING | 50510 | 0% | 100% | 2 | Search COMPOUND+SOURCE+MAGNETRON+SPUTTERING | Search COMPOUND+SOURCE+MAGNETRON+SPUTTERING |
9 | DISORDER ACCUMULATION | 50510 | 0% | 100% | 2 | Search DISORDER+ACCUMULATION | Search DISORDER+ACCUMULATION |
10 | GAN BASED DILUTED MAGNETIC SEMICONDUCTOR | 50510 | 0% | 100% | 2 | Search GAN+BASED+DILUTED+MAGNETIC+SEMICONDUCTOR | Search GAN+BASED+DILUTED+MAGNETIC+SEMICONDUCTOR |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | LORENZ, K , ALVES, E , GLOUX, F , RUTERANA, P , (2010) RE IMPLANTATION AND ANNEALING OF III-NITRIDES.RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS. VOL. 124. ISSUE . P. 25 -54 | 43 | 90% | 5 |
2 | WAHL, U , ALVES, E , LORENZ, K , CORREIA, JG , MONTEIRO, T , DE VRIES, B , VANTOMME, A , VIANDEN, R , (2003) LATTICE LOCATION AND OPTICAL ACTIVATION OF RARE EARTH IMPLANTED GAN.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 105. ISSUE 1-3. P. 132 -140 | 43 | 93% | 35 |
3 | HIGUCHI, S , ISHIZUMI, A , SAWAHATA, J , AKIMOTO, K , KANEMITSU, Y , (2010) LUMINESCENCE AND ENERGY-TRANSFER MECHANISMS IN EU3+-DOPED GAN EPITAXIAL FILMS.PHYSICAL REVIEW B. VOL. 81. ISSUE 3. P. - | 40 | 80% | 18 |
4 | MARTIN, R , (2010) VISIBLE LUMINESCENT RE-DOPED GAN, ALGAN AND ALINN.RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS. VOL. 124. ISSUE . P. 189 -219 | 41 | 82% | 2 |
5 | WAKAHARA, A , SEKIGUCHI, H , OKADA, H , TAKAGI, Y , (2012) CURRENT STATUS FOR LIGHT-EMITTING DIODE WITH EU-DOPED GAN ACTIVE LAYER GROWN BY MBE.JOURNAL OF LUMINESCENCE. VOL. 132. ISSUE 12. P. 3113 -3117 | 32 | 97% | 7 |
6 | VANTOMME, A , DE VRIES, B , WAHL, U , (2010) LATTICE LOCATION OF RE IMPURITIES IN III-NITRIDES.RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS. VOL. 124. ISSUE . P. 55 -98 | 44 | 75% | 5 |
7 | DRIDI, Z , LAZREG, A , ROZALE, H , BOUHAFS, B , (2010) ELECTRONIC STRUCTURE AND MAGNETISM OF CUBIC GA1-XEUXN AND AL1-XEUXN USING THE LSDA PLUS U APPROACH.COMPUTATIONAL MATERIALS SCIENCE. VOL. 48. ISSUE 4. P. 743 -748 | 36 | 86% | 6 |
8 | KAMINSKA, A , MA, CG , BRIK, MG , KOZANECKI, A , BOCKOWSKI, M , ALVES, E , SUCHOCKI, A , (2012) ELECTRONIC STRUCTURE OF YTTERBIUM-IMPLANTED GAN AT AMBIENT AND HIGH PRESSURE: EXPERIMENTAL AND CRYSTAL FIELD STUDIES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 24. ISSUE 9. P. - | 45 | 63% | 1 |
9 | LORENZ, K , BARRADAS, NP , ALVES, E , ROQAN, IS , NOGALES, E , MARTIN, RW , O'DONNELL, KP , GLOUX, F , RUTERANA, P , (2009) STRUCTURAL AND OPTICAL CHARACTERIZATION OF EU-IMPLANTED GAN.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 42. ISSUE 16. P. - | 35 | 81% | 11 |
10 | DAHAL, R , LIN, JY , JIANG, HX , ZAVADA, JM , (2010) ER-DOPED GAN AND INXGA1-XN FOR OPTICAL COMMUNICATIONS.RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS. VOL. 124. ISSUE . P. 115 -157 | 31 | 91% | 1 |
Classes with closest relation at Level 1 |