Class information for:
Level 1: ALGAN GAN HBT//P INGAN//COMMON EMITTER

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
34897 105 16.9 78%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
34897 1                   ALGAN GAN HBT//P INGAN//COMMON EMITTER 105

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ALGAN GAN HBT authKW 872446 3% 100% 3
2 P INGAN authKW 581627 4% 50% 4
3 COMMON EMITTER authKW 373902 3% 43% 3
4 A1GAN GAN HBT authKW 290815 1% 100% 1
5 BLUE LOTUS MICRO DEVICES address 290815 1% 100% 1
6 CMPD SEMICOND address 290815 1% 100% 1
7 COMMON EMITTER OPERATION authKW 290815 1% 100% 1
8 EMITTER REGION authKW 290815 1% 100% 1
9 EXTRINSIC BASE REGROWTH authKW 290815 1% 100% 1
10 GAN HBT authKW 290815 1% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 1396 72% 0% 76
2 Engineering, Electrical & Electronic 606 45% 0% 47
3 Physics, Condensed Matter 249 27% 0% 28
4 Materials Science, Multidisciplinary 64 20% 0% 21
5 Crystallography 53 7% 0% 7
6 Materials Science, Coatings & Films 12 3% 0% 3
7 Materials Science, Characterization, Testing 4 1% 0% 1
8 Electrochemistry 2 2% 0% 2
9 Nanoscience & Nanotechnology 1 2% 0% 2
10 Optics 0 2% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 BLUE LOTUS MICRO DEVICES 290815 1% 100% 1
2 CMPD SEMICOND 290815 1% 100% 1
3 NTT BAS S 145405 2% 25% 2
4 COMPOUND SEMICOND MICROELECT 58157 3% 7% 3
5 NTT BASIC S 56831 16% 1% 17
6 NIT BASIC S 48468 1% 17% 1
7 CPDS SEMICOND MICROELECT 36350 1% 13% 1
8 YOKOHAMA DEV S 34892 3% 4% 3
9 ELECT OPT SCI ENGN 22369 1% 8% 1
10 CPD SEMICOND 20771 1% 7% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOLID-STATE ELECTRONICS 9578 17% 0% 18
2 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2327 2% 0% 2
3 APPLIED PHYSICS LETTERS 1395 22% 0% 23
4 IEEE ELECTRON DEVICE LETTERS 1156 6% 0% 6
5 IEEE TRANSACTIONS ON ELECTRON DEVICES 931 7% 0% 7
6 ELECTROCHEMICAL AND SOLID STATE LETTERS 608 3% 0% 3
7 ELECTRONICS LETTERS 467 8% 0% 8
8 JOURNAL OF CRYSTAL GROWTH 450 7% 0% 7
9 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 354 5% 0% 5
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 228 5% 0% 5

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 ALGAN GAN HBT 872446 3% 100% 3 Search ALGAN+GAN+HBT Search ALGAN+GAN+HBT
2 P INGAN 581627 4% 50% 4 Search P+INGAN Search P+INGAN
3 COMMON EMITTER 373902 3% 43% 3 Search COMMON+EMITTER Search COMMON+EMITTER
4 A1GAN GAN HBT 290815 1% 100% 1 Search A1GAN+GAN+HBT Search A1GAN+GAN+HBT
5 COMMON EMITTER OPERATION 290815 1% 100% 1 Search COMMON+EMITTER+OPERATION Search COMMON+EMITTER+OPERATION
6 EMITTER REGION 290815 1% 100% 1 Search EMITTER+REGION Search EMITTER+REGION
7 EXTRINSIC BASE REGROWTH 290815 1% 100% 1 Search EXTRINSIC+BASE+REGROWTH Search EXTRINSIC+BASE+REGROWTH
8 GAN HBT 290815 1% 100% 1 Search GAN+HBT Search GAN+HBT
9 MG IONIZATION EFFICIENCY 290815 1% 100% 1 Search MG+IONIZATION+EFFICIENCY Search MG+IONIZATION+EFFICIENCY
10 MG MEMORY EFFECT 290815 1% 100% 1 Search MG+MEMORY+EFFECT Search MG+MEMORY+EFFECT

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 OSINSKY, A , PEARTON, SJ , REN, F , LEE, KP , DABIRAN, AM , CHOW, PP , (2004) TEMPERATURE DEPENDENCE OF PNP GAN/INGAN HBT PERFORMANCE.SOLID-STATE ELECTRONICS. VOL. 48. ISSUE 1. P. 37 -41 34 87% 5
2 LEE, KP , DABIRAN, A , OSINSKY, A , CHOW, PP , PEARTON, SJ , REN, F , (2003) RF PERFORMANCE OF GAN-BASED NPN BIPOLAR TRANSISTORS.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 9. P. 1501 -1506 34 83% 2
3 LEE, KP , REN, F , PEARTON, SJ , DABIRAN, AM , CHOW, PP , (2003) EFFECTS OF BASE STRUCTURE ON PERFORMANCE OF GAN-BASED HETEROJUNCTION BIPOLAR TRANSISTORS.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 6. P. 1031 -1036 33 85% 0
4 LEE, KP , REN, F , PEARTON, SJ , DABIRAN, AM , CHOW, PP , (2003) SIMULATIONS OF INGAN-BASE HETEROJUNCTION BIPOLAR TRANSISTORS.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 6. P. 1009 -1014 32 86% 0
5 LEE, KP , DABIRAN, A , CHOW, PP , PEARTON, SJ , REN, F , (2003) INFLUENCE OF LAYER DOPING AND THICKNESS ON PREDICTED PERFORMANCE OF NPNALGAN/GAN HBTS.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 6. P. 969-974 31 89% 2
6 TERANO, A , TSUCHIYA, T , MOCHIZUKI, K , (2014) CHARACTERISTICS OF GAN-BASED BIPOLAR TRANSISTORS ON SAPPHIRE SUBSTRATES WITH THE N-TYPE EMITTER REGION FORMED USING SI-ION IMPLANTATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 10. P. 3411 -3416 14 93% 0
7 LEE, YC , ZHANG, Y , LOCHNER, ZM , KIM, HJ , RYOU, JH , DUPUIS, RD , SHEN, SC , (2012) GAN/INGAN HETEROJUNCTION BIPOLAR TRANSISTORS WITH ULTRA-HIGH D.C. POWER DENSITY (> 3MW/CM(2)).PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 209. ISSUE 3. P. 497 -500 15 83% 1
8 NISHIKAWA, A , KUMAKURA, K , MAKIMOTO, T , (2007) TEMPERATURE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF NPN-TYPE GAN/INGAN DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.APPLIED PHYSICS LETTERS. VOL. 91. ISSUE 13. P. - 15 88% 4
9 LEE, KP , ZHANG, AP , DANG, G , REN, F , HAN, J , CHU, SNG , HOBSON, WS , LOPATA, J , ABERNATHY, CR , PEARTON, SJ , ET AL (2001) SELF-ALIGNED PROCESS FOR EMITTER- AND BASE-REGROWTH GANHBTS AND BJTS.SOLID-STATE ELECTRONICS. VOL. 45. ISSUE 2. P. 243-247 13 100% 6
10 SHEN, SC , DUPUIS, RD , LOCHNER, Z , LEE, YC , KAO, TT , ZHANG, Y , KIM, HJ , RYOU, JH , (2013) WORKING TOWARD HIGH-POWER GAN/INGAN HETEROJUNCTION BIPOLAR TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 28. ISSUE 7. P. - 14 67% 2

Classes with closest relation at Level 1


Rank Class id link
1 16807 SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING
2 28684 TRANSISTOR LASER//TRANSISTOR LASER TL//0 D QUANTUM WELLS
3 8713 OHMIC CONTACT//P GAN//P TYPE GAN
4 86 ALGAN GAN//CURRENT COLLAPSE//HEMT
5 1985 HETEROJUNCTION BIPOLAR TRANSISTORS//HBT//HETEROJUNCTION BIPOLAR TRANSISTOR HBT
6 595 GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE
7 37433 3D SIMULATION OF LIGHT PROPAGATION//LASHKARYOV INSITUTE SEMICOND PHYS//LNOFS
8 17965 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//MAT SCI PL//MICROCATHODOLUMINESCENCE
9 37353 OPTICAL ANALOG SIGNAL TRANSMISSION//COOLED LEDS//GALVANICALLY ISOLATED AMPLIFIER
10 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM

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