Class information for:
Level 1: SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
16807 635 21.0 82%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
16807 1                   SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING 635

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOCIOTECHNO SCI TECHNOL address 507903 2% 81% 13
2 SEMICONDUCTOR ELECTROLYTE CONTACTS authKW 153873 1% 80% 4
3 MAT STUDY TESTING address 96722 2% 15% 13
4 GLOBAL SOLAR INITIAT address 96172 0% 100% 2
5 NAT MAT STUDY TESTING address 96172 0% 100% 2
6 SEMICOND TECHNOL SCI address 96172 0% 100% 2
7 SOCIO TECHNO SCI TECHNOL address 96172 0% 100% 2
8 TWO BODY INTERATOMIC POTENTIAL authKW 96172 0% 100% 2
9 GAN authKW 84242 14% 2% 92
10 N GAN authKW 75256 1% 26% 6

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 6632 65% 0% 410
2 Materials Science, Coatings & Films 3172 16% 0% 104
3 Materials Science, Multidisciplinary 1116 31% 0% 197
4 Nanoscience & Nanotechnology 962 14% 0% 88
5 Physics, Condensed Matter 775 20% 0% 126
6 Engineering, Electrical & Electronic 640 20% 0% 130
7 Electrochemistry 377 7% 0% 45
8 Chemistry, Physical 41 9% 0% 55
9 Optics 3 3% 0% 16
10 Microscopy 2 0% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOCIOTECHNO SCI TECHNOL 507903 2% 81% 13
2 MAT STUDY TESTING 96722 2% 15% 13
3 GLOBAL SOLAR INITIAT 96172 0% 100% 2
4 NAT MAT STUDY TESTING 96172 0% 100% 2
5 SEMICOND TECHNOL SCI 96172 0% 100% 2
6 SOCIO TECHNO SCI TECHNOL 96172 0% 100% 2
7 ARMAMENT TECH PROD 48086 0% 100% 1
8 CHUNG CHENG TEHNOL 48086 0% 100% 1
9 DOT METR TECHNOL 48086 0% 100% 1
10 DUKIJN GU 48086 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 31187 3% 4% 18
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 5951 7% 0% 42
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 3497 6% 0% 35
4 JOURNAL OF ELECTRONIC MATERIALS 3061 4% 0% 25
5 JAPANESE JOURNAL OF APPLIED PHYSICS 2345 4% 0% 28
6 APPLIED PHYSICS LETTERS 2193 11% 0% 72
7 GEC JOURNAL OF TECHNOLOGY 1922 0% 4% 1
8 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1863 3% 0% 17
9 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 1807 5% 0% 34
10 SOLID-STATE ELECTRONICS 1554 3% 0% 18

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SEMICONDUCTOR ELECTROLYTE CONTACTS 153873 1% 80% 4 Search SEMICONDUCTOR+ELECTROLYTE+CONTACTS Search SEMICONDUCTOR+ELECTROLYTE+CONTACTS
2 TWO BODY INTERATOMIC POTENTIAL 96172 0% 100% 2 Search TWO+BODY+INTERATOMIC+POTENTIAL Search TWO+BODY+INTERATOMIC+POTENTIAL
3 GAN 84242 14% 2% 92 Search GAN Search GAN
4 N GAN 75256 1% 26% 6 Search N+GAN Search N+GAN
5 PHOTOELECTROCHEMICAL ETCHING 66571 1% 23% 6 Search PHOTOELECTROCHEMICAL+ETCHING Search PHOTOELECTROCHEMICAL+ETCHING
6 GALLIUM HYDROXIDE 64113 0% 67% 2 Search GALLIUM+HYDROXIDE Search GALLIUM+HYDROXIDE
7 SEMICONDUCTOR PHOTOELECTRODE 64113 0% 67% 2 Search SEMICONDUCTOR+PHOTOELECTRODE Search SEMICONDUCTOR+PHOTOELECTRODE
8 1100 PLANE 48086 0% 100% 1 Search 1100+PLANE Search 1100+PLANE
9 AFM SURFACE ROUGHNESS 48086 0% 100% 1 Search AFM+SURFACE+ROUGHNESS Search AFM+SURFACE+ROUGHNESS
10 ALUMINUM SUBFLUORIDE 48086 0% 100% 1 Search ALUMINUM+SUBFLUORIDE Search ALUMINUM+SUBFLUORIDE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 ADESIDA, I , YOUTSEY, C , PING, AT , KHAN, F , ROMANO, LT , BULMAN, G , (1999) DRY AND WET ETCHING FOR GROUP III-NITRIDES.MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. VOL. 4. ISSUE . P. - 36 90% 8
2 RAWAL, DS , ARORA, H , SEHGAL, BK , MURALIDHARAN, R , (2014) COMPARATIVE STUDY OF GAN MESA ETCH CHARACTERISTICS IN CL-2 BASED INDUCTIVELY COUPLED PLASMA WITH AR AND BCL3 AS ADDITIVE GASES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 32. ISSUE 3. P. - 20 87% 3
3 RAWAL, DS , ARORA, H , AGARWAL, VR , VINAYAK, S , KAPOOR, A , SEHGAL, BK , MURALIDHARAN, R , SAHA, D , MALIK, HK , (2012) GAN ETCH RATE AND SURFACE ROUGHNESS EVOLUTION IN CL-2/AR BASED INDUCTIVELY COUPLED PLASMA ETCHING.THIN SOLID FILMS. VOL. 520. ISSUE 24. P. 7212-7218 21 88% 3
4 KIBRIA, MG , MI, Z , (2016) ARTIFICIAL PHOTOSYNTHESIS USING METAL/NONMETAL-NITRIDE SEMICONDUCTORS: CURRENT STATUS, PROSPECTS, AND CHALLENGES.JOURNAL OF MATERIALS CHEMISTRY A. VOL. 4. ISSUE 8. P. 2801 -2820 45 23% 9
5 BOUCHOULE, S , BOUBANGA-TOMBET, S , LE GRATIET, L , D'YERVILLE, ML , TORRES, J , CHEN, Y , COQUILLAT, D , (2007) REACTIVE ION ETCHING OF HIGH OPTICAL QUALITY GAN/SAPPHIRE PHOTONIC CRYSTAL SLAB USING CH4-H-2 CHEMISTRY.JOURNAL OF APPLIED PHYSICS. VOL. 101. ISSUE 4. P. - 30 64% 9
6 KOMETANI, R , ISHIKAWA, K , TAKEDA, K , KONDO, H , SEKINE, M , HORI, M , (2013) A HIGH-TEMPERATURE NITROGEN PLASMA ETCHING FOR PRESERVING SMOOTH AND STOICHIOMETRIC GAN SURFACE.APPLIED PHYSICS EXPRESS. VOL. 6. ISSUE 5. P. - 23 66% 2
7 OUBENSAID, EH , DULUARD, CY , PICHON, LE , PEREIRA, J , BOUFNICHEL, M , LEFAUCHEUX, P , DUSSART, R , RANSON, P , (2009) EFFECT OF THE ADDITION OF SF6 AND N-2 IN INDUCTIVELY COUPLED SICL4 PLASMA FOR GAN ETCHING.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 24. ISSUE 7. P. - 16 84% 2
8 IM, YH , CHOI, CS , HAHN, YB , (2001) HIGH DENSITY PLASMA ETCHING OF GAN FILMS IN CL-2/AR DISCHARGES WITH A LOW-FREQUENCY-EXCITED DC BIAS.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 39. ISSUE 4. P. 617-621 17 100% 1
9 HAHN, YB , IM, YH , PARK, JS , NAHM, KS , LEE, YS , (2001) EFFECT OF DRY ETCHING CONDITIONS ON SURFACE MORPHOLOGY AND OPTICAL PROPERTIES OF GAN FILMS IN CHLORINE-BASED INDUCTIVELY COUPLED PLASMAS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 19. ISSUE 4. P. 1277-1281 17 94% 11
10 EDDY, CR , (1999) ETCH PROCESSING OF III-V NITRIDES.MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. VOL. 4. ISSUE . P. - 22 79% 0

Classes with closest relation at Level 1


Rank Class id link
1 34897 ALGAN GAN HBT//P INGAN//COMMON EMITTER
2 31016 GRUNBERG//CRHEA UP//CRITICAL STACK THICKNESS
3 8713 OHMIC CONTACT//P GAN//P TYPE GAN
4 5846 FUJIMI KU//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//DRY ETCHING
5 2345 LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//LIGHT EXTRACTION
6 15527 POROUS INP//POROUS SIC//LOW DIMENS SEMICOND STRUCT
7 10075 HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH//BULK GAN
8 595 GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE
9 2999 GAN NANOWIRES//GAN NANORODS//AMMONIATING
10 10237 ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX

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