Class information for:
Level 1: HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH//BULK GAN

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
10075 1094 20.1 76%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
10075 1                   HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH//BULK GAN 1094

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 HYDRIDE VAPOR PHASE EPITAXY authKW 1054524 9% 39% 97
2 AMMONOTHERMAL CRYSTAL GROWTH authKW 641932 2% 100% 23
3 BULK GAN authKW 487145 2% 73% 24
4 HVPE authKW 465787 5% 32% 52
5 AMMONOTHERMAL GROWTH authKW 430608 2% 86% 18
6 HIGH PRESSURE GROWTH FROM SOLUTION authKW 307011 1% 100% 11
7 NITRIDES authKW 267494 18% 5% 195
8 AMMONOTHERMAL authKW 260485 1% 67% 14
9 SEMICONDUCTING GALLIUM COMPOUNDS authKW 246000 4% 19% 46
10 GAN authKW 240536 19% 4% 204

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Crystallography 22260 38% 0% 421
2 Physics, Applied 12463 67% 0% 736
3 Materials Science, Multidisciplinary 7161 56% 0% 613
4 Physics, Condensed Matter 755 16% 0% 170
5 Materials Science, Coatings & Films 84 2% 0% 27
6 Thermodynamics 47 2% 0% 25
7 Physics, Multidisciplinary 34 4% 0% 48
8 Materials Science, Ceramics 28 1% 0% 15
9 Engineering, Electrical & Electronic 19 5% 0% 58
10 Metallurgy & Metallurgical Engineering 6 2% 0% 20

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 SOLID STATE LIGHTING ENERGY ELECT 170948 1% 88% 7
2 HIGH P SURE 124203 6% 7% 62
3 CENT SOLAR ENERGY 87215 0% 63% 5
4 PROC MACHINERY SYST ENGN 80728 1% 32% 9
5 ADV NITRIDE TECHNOL CANTECH 77524 0% 56% 5
6 ERATO JST UCSB GRP 62796 0% 75% 3
7 COMPOUND SEMICOND PROD 55820 0% 100% 2
8 HIGH P SURE PHYS PAS 55820 0% 100% 2
9 CQD 41862 0% 50% 3
10 JST UCSB GRP 41862 0% 50% 3

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 125758 34% 1% 373
2 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 12556 1% 3% 15
3 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 4243 4% 0% 43
4 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 4123 5% 0% 55
5 APPLIED PHYSICS EXPRESS 3662 2% 1% 22
6 JAPANESE JOURNAL OF APPLIED PHYSICS 2232 3% 0% 36
7 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2132 1% 1% 10
8 CRYSTAL RESEARCH AND TECHNOLOGY 1072 1% 0% 16
9 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1068 2% 0% 17
10 CRYSTAL GROWTH & DESIGN 807 1% 0% 16

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 HYDRIDE VAPOR PHASE EPITAXY 1054524 9% 39% 97 Search HYDRIDE+VAPOR+PHASE+EPITAXY Search HYDRIDE+VAPOR+PHASE+EPITAXY
2 AMMONOTHERMAL CRYSTAL GROWTH 641932 2% 100% 23 Search AMMONOTHERMAL+CRYSTAL+GROWTH Search AMMONOTHERMAL+CRYSTAL+GROWTH
3 BULK GAN 487145 2% 73% 24 Search BULK+GAN Search BULK+GAN
4 HVPE 465787 5% 32% 52 Search HVPE Search HVPE
5 AMMONOTHERMAL GROWTH 430608 2% 86% 18 Search AMMONOTHERMAL+GROWTH Search AMMONOTHERMAL+GROWTH
6 HIGH PRESSURE GROWTH FROM SOLUTION 307011 1% 100% 11 Search HIGH+PRESSURE+GROWTH+FROM+SOLUTION Search HIGH+PRESSURE+GROWTH+FROM+SOLUTION
7 NITRIDES 267494 18% 5% 195 Search NITRIDES Search NITRIDES
8 AMMONOTHERMAL 260485 1% 67% 14 Search AMMONOTHERMAL Search AMMONOTHERMAL
9 SEMICONDUCTING GALLIUM COMPOUNDS 246000 4% 19% 46 Search SEMICONDUCTING+GALLIUM+COMPOUNDS Search SEMICONDUCTING+GALLIUM+COMPOUNDS
10 GAN 240536 19% 4% 204 Search GAN Search GAN

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 DENIS, A , GOGLIO, G , DEMAZEAU, G , (2006) GALLIUM NITRIDE BULK CRYSTAL GROWTH PROCESSES: A REVIEW.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 50. ISSUE 6. P. 167 -194 70 78% 59
2 MIRZAEE, I , CHARMCHI, M , SUN, HW , (2016) HEAT, MASS, AND CRYSTAL GROWTH OF GAN IN THE AMMONOTHERMAL PROCESS: A NUMERICAL STUDY.NUMERICAL HEAT TRANSFER PART A-APPLICATIONS. VOL. 70. ISSUE 5. P. 460 -491 58 65% 0
3 AVRUTIN, V , SILVERSMITH, DJ , MORI, Y , KAWAMURA, F , KITAOKA, Y , MORKOC, H , (2010) GROWTH OF BULK GAN AND ALN: PROGRESS AND CHALLENGES.PROCEEDINGS OF THE IEEE. VOL. 98. ISSUE 7. P. 1302 -1315 40 75% 16
4 MORI, Y , IMADE, M , MURAKAMI, K , TAKAZAWA, H , IMABAYASHI, H , TODOROKI, Y , KITAMOTO, K , MARUYAMA, M , YOSHIMURA, M , KITAOKA, Y , ET AL (2012) GROWTH OF BULK GAN CRYSTAL BY NA FLUX METHOD UNDER VARIOUS CONDITIONS.JOURNAL OF CRYSTAL GROWTH. VOL. 350. ISSUE 1. P. 72-74 26 96% 36
5 MORI, Y , IMADE, M , MARUYAMA, M , YOSHIMURA, M , (2013) GROWTH OF GAN CRYSTALS BY NA FLUX METHOD.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 2. ISSUE 8. P. N3068-N3071 27 90% 10
6 BOCKOWSKI, M , IWINSKA, M , AMILUSIK, M , FIJALKOWSKI, M , LUCZNIK, B , SOCHACKI, T , (2016) CHALLENGES AND FUTURE PERSPECTIVES IN HVPE-GAN GROWTH ON AMMONOTHERMAL GAN SEEDS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 31. ISSUE 9. P. - 27 79% 1
7 VON DOLLEN, P , PIMPUTKAR, S , ALREESH, MA , NAKAMURA, S , SPECK, JS , (2016) A NEW SYSTEM FOR SODIUM FLUX GROWTH OF BULK GAN. PART II: IN SITU INVESTIGATION OF GROWTH PROCESSES.JOURNAL OF CRYSTAL GROWTH. VOL. 456. ISSUE . P. 67 -72 25 93% 0
8 BOCKOWSKI, M , (2014) HIGH NITROGEN PRESSURE SOLUTION GROWTH OF GAN.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - 25 89% 1
9 PASKOVA, T , EVANS, KR , (2009) GAN SUBSTRATES-PROGRESS, STATUS, AND PROSPECTS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 15. ISSUE 4. P. 1041 -1052 29 76% 48
10 KAWAMURA, F , MORISHITA, M , TANPO, M , IMADE, M , YOSHIMURA, M , KITAOKA, Y , MORI, Y , SASAKI, T , (2008) EFFECT OF CARBON ADDITIVE ON INCREASES IN THE GROWTH RATE OF 2 IN GAN SINGLE CRYSTALS IN THE NA FLUX METHOD.JOURNAL OF CRYSTAL GROWTH. VOL. 310. ISSUE 17. P. 3946-3949 24 96% 45

Classes with closest relation at Level 1



Rank Class id link
1 595 GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE
2 3942 GAN//METALORGANIC CHEMICAL VAPOR DEPOSITION//NITRIDES
3 10237 ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX
4 4181 SEMIPOLAR//NONPOLAR//A PLANE GAN
5 16807 SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING
6 2999 GAN NANOWIRES//GAN NANORODS//AMMONIATING
7 17965 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//MAT SCI PL//MICROCATHODOLUMINESCENCE
8 17919 LIGAO2//ZNO SUBSTRATE//LITHIUM GALLIUM OXIDE
9 4053 ALGAN//SEMICONDUCTING ALUMINUM COMPOUNDS//ALINGAN
10 8959 CUBIC GAN//FB PHYS 6//CUBIC ALGAN

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