Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
10075 | 1094 | 20.1 | 76% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
10075 | 1 | HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH//BULK GAN | 1094 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HYDRIDE VAPOR PHASE EPITAXY | authKW | 1054524 | 9% | 39% | 97 |
2 | AMMONOTHERMAL CRYSTAL GROWTH | authKW | 641932 | 2% | 100% | 23 |
3 | BULK GAN | authKW | 487145 | 2% | 73% | 24 |
4 | HVPE | authKW | 465787 | 5% | 32% | 52 |
5 | AMMONOTHERMAL GROWTH | authKW | 430608 | 2% | 86% | 18 |
6 | HIGH PRESSURE GROWTH FROM SOLUTION | authKW | 307011 | 1% | 100% | 11 |
7 | NITRIDES | authKW | 267494 | 18% | 5% | 195 |
8 | AMMONOTHERMAL | authKW | 260485 | 1% | 67% | 14 |
9 | SEMICONDUCTING GALLIUM COMPOUNDS | authKW | 246000 | 4% | 19% | 46 |
10 | GAN | authKW | 240536 | 19% | 4% | 204 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Crystallography | 22260 | 38% | 0% | 421 |
2 | Physics, Applied | 12463 | 67% | 0% | 736 |
3 | Materials Science, Multidisciplinary | 7161 | 56% | 0% | 613 |
4 | Physics, Condensed Matter | 755 | 16% | 0% | 170 |
5 | Materials Science, Coatings & Films | 84 | 2% | 0% | 27 |
6 | Thermodynamics | 47 | 2% | 0% | 25 |
7 | Physics, Multidisciplinary | 34 | 4% | 0% | 48 |
8 | Materials Science, Ceramics | 28 | 1% | 0% | 15 |
9 | Engineering, Electrical & Electronic | 19 | 5% | 0% | 58 |
10 | Metallurgy & Metallurgical Engineering | 6 | 2% | 0% | 20 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID STATE LIGHTING ENERGY ELECT | 170948 | 1% | 88% | 7 |
2 | HIGH P SURE | 124203 | 6% | 7% | 62 |
3 | CENT SOLAR ENERGY | 87215 | 0% | 63% | 5 |
4 | PROC MACHINERY SYST ENGN | 80728 | 1% | 32% | 9 |
5 | ADV NITRIDE TECHNOL CANTECH | 77524 | 0% | 56% | 5 |
6 | ERATO JST UCSB GRP | 62796 | 0% | 75% | 3 |
7 | COMPOUND SEMICOND PROD | 55820 | 0% | 100% | 2 |
8 | HIGH P SURE PHYS PAS | 55820 | 0% | 100% | 2 |
9 | CQD | 41862 | 0% | 50% | 3 |
10 | JST UCSB GRP | 41862 | 0% | 50% | 3 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 125758 | 34% | 1% | 373 |
2 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 12556 | 1% | 3% | 15 |
3 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 4243 | 4% | 0% | 43 |
4 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 4123 | 5% | 0% | 55 |
5 | APPLIED PHYSICS EXPRESS | 3662 | 2% | 1% | 22 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS | 2232 | 3% | 0% | 36 |
7 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2132 | 1% | 1% | 10 |
8 | CRYSTAL RESEARCH AND TECHNOLOGY | 1072 | 1% | 0% | 16 |
9 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1068 | 2% | 0% | 17 |
10 | CRYSTAL GROWTH & DESIGN | 807 | 1% | 0% | 16 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HYDRIDE VAPOR PHASE EPITAXY | 1054524 | 9% | 39% | 97 | Search HYDRIDE+VAPOR+PHASE+EPITAXY | Search HYDRIDE+VAPOR+PHASE+EPITAXY |
2 | AMMONOTHERMAL CRYSTAL GROWTH | 641932 | 2% | 100% | 23 | Search AMMONOTHERMAL+CRYSTAL+GROWTH | Search AMMONOTHERMAL+CRYSTAL+GROWTH |
3 | BULK GAN | 487145 | 2% | 73% | 24 | Search BULK+GAN | Search BULK+GAN |
4 | HVPE | 465787 | 5% | 32% | 52 | Search HVPE | Search HVPE |
5 | AMMONOTHERMAL GROWTH | 430608 | 2% | 86% | 18 | Search AMMONOTHERMAL+GROWTH | Search AMMONOTHERMAL+GROWTH |
6 | HIGH PRESSURE GROWTH FROM SOLUTION | 307011 | 1% | 100% | 11 | Search HIGH+PRESSURE+GROWTH+FROM+SOLUTION | Search HIGH+PRESSURE+GROWTH+FROM+SOLUTION |
7 | NITRIDES | 267494 | 18% | 5% | 195 | Search NITRIDES | Search NITRIDES |
8 | AMMONOTHERMAL | 260485 | 1% | 67% | 14 | Search AMMONOTHERMAL | Search AMMONOTHERMAL |
9 | SEMICONDUCTING GALLIUM COMPOUNDS | 246000 | 4% | 19% | 46 | Search SEMICONDUCTING+GALLIUM+COMPOUNDS | Search SEMICONDUCTING+GALLIUM+COMPOUNDS |
10 | GAN | 240536 | 19% | 4% | 204 | Search GAN | Search GAN |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | DENIS, A , GOGLIO, G , DEMAZEAU, G , (2006) GALLIUM NITRIDE BULK CRYSTAL GROWTH PROCESSES: A REVIEW.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 50. ISSUE 6. P. 167 -194 | 70 | 78% | 59 |
2 | MIRZAEE, I , CHARMCHI, M , SUN, HW , (2016) HEAT, MASS, AND CRYSTAL GROWTH OF GAN IN THE AMMONOTHERMAL PROCESS: A NUMERICAL STUDY.NUMERICAL HEAT TRANSFER PART A-APPLICATIONS. VOL. 70. ISSUE 5. P. 460 -491 | 58 | 65% | 0 |
3 | AVRUTIN, V , SILVERSMITH, DJ , MORI, Y , KAWAMURA, F , KITAOKA, Y , MORKOC, H , (2010) GROWTH OF BULK GAN AND ALN: PROGRESS AND CHALLENGES.PROCEEDINGS OF THE IEEE. VOL. 98. ISSUE 7. P. 1302 -1315 | 40 | 75% | 16 |
4 | MORI, Y , IMADE, M , MURAKAMI, K , TAKAZAWA, H , IMABAYASHI, H , TODOROKI, Y , KITAMOTO, K , MARUYAMA, M , YOSHIMURA, M , KITAOKA, Y , ET AL (2012) GROWTH OF BULK GAN CRYSTAL BY NA FLUX METHOD UNDER VARIOUS CONDITIONS.JOURNAL OF CRYSTAL GROWTH. VOL. 350. ISSUE 1. P. 72-74 | 26 | 96% | 36 |
5 | MORI, Y , IMADE, M , MARUYAMA, M , YOSHIMURA, M , (2013) GROWTH OF GAN CRYSTALS BY NA FLUX METHOD.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 2. ISSUE 8. P. N3068-N3071 | 27 | 90% | 10 |
6 | BOCKOWSKI, M , IWINSKA, M , AMILUSIK, M , FIJALKOWSKI, M , LUCZNIK, B , SOCHACKI, T , (2016) CHALLENGES AND FUTURE PERSPECTIVES IN HVPE-GAN GROWTH ON AMMONOTHERMAL GAN SEEDS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 31. ISSUE 9. P. - | 27 | 79% | 1 |
7 | VON DOLLEN, P , PIMPUTKAR, S , ALREESH, MA , NAKAMURA, S , SPECK, JS , (2016) A NEW SYSTEM FOR SODIUM FLUX GROWTH OF BULK GAN. PART II: IN SITU INVESTIGATION OF GROWTH PROCESSES.JOURNAL OF CRYSTAL GROWTH. VOL. 456. ISSUE . P. 67 -72 | 25 | 93% | 0 |
8 | BOCKOWSKI, M , (2014) HIGH NITROGEN PRESSURE SOLUTION GROWTH OF GAN.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - | 25 | 89% | 1 |
9 | PASKOVA, T , EVANS, KR , (2009) GAN SUBSTRATES-PROGRESS, STATUS, AND PROSPECTS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 15. ISSUE 4. P. 1041 -1052 | 29 | 76% | 48 |
10 | KAWAMURA, F , MORISHITA, M , TANPO, M , IMADE, M , YOSHIMURA, M , KITAOKA, Y , MORI, Y , SASAKI, T , (2008) EFFECT OF CARBON ADDITIVE ON INCREASES IN THE GROWTH RATE OF 2 IN GAN SINGLE CRYSTALS IN THE NA FLUX METHOD.JOURNAL OF CRYSTAL GROWTH. VOL. 310. ISSUE 17. P. 3946-3949 | 24 | 96% | 45 |
Classes with closest relation at Level 1 |