Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
4181 | 1832 | 22.0 | 86% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
178 | 3 | GAN//PHYSICS, APPLIED//GALLIUM NITRIDE | 57874 |
20 | 2 | GAN//GALLIUM NITRIDE//NITRIDES | 36496 |
4181 | 1 | SEMIPOLAR//NONPOLAR//A PLANE GAN | 1832 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SEMIPOLAR | authKW | 758452 | 3% | 71% | 64 |
2 | NONPOLAR | authKW | 570752 | 5% | 41% | 84 |
3 | A PLANE GAN | authKW | 467202 | 2% | 97% | 29 |
4 | NON POLAR GAN | authKW | 335999 | 1% | 81% | 25 |
5 | SEMIPOLAR GAN | authKW | 304477 | 1% | 70% | 26 |
6 | LED TECHNOL | address | 268867 | 1% | 73% | 22 |
7 | NANOOPT ENGN | address | 237452 | 3% | 30% | 47 |
8 | M PLANE | authKW | 229350 | 1% | 81% | 17 |
9 | UCSB GRP | address | 180155 | 1% | 54% | 20 |
10 | A PLANE | authKW | 179979 | 1% | 60% | 18 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 25088 | 73% | 0% | 1345 |
2 | Crystallography | 4015 | 13% | 0% | 240 |
3 | Physics, Condensed Matter | 2714 | 22% | 0% | 396 |
4 | Materials Science, Multidisciplinary | 2656 | 29% | 0% | 523 |
5 | Engineering, Electrical & Electronic | 281 | 10% | 0% | 180 |
6 | Optics | 183 | 6% | 0% | 103 |
7 | Physics, Multidisciplinary | 157 | 6% | 0% | 110 |
8 | Nanoscience & Nanotechnology | 63 | 3% | 0% | 55 |
9 | Materials Science, Coatings & Films | 56 | 2% | 0% | 32 |
10 | Materials Science, Ceramics | 14 | 1% | 0% | 17 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | LED TECHNOL | 268867 | 1% | 73% | 22 |
2 | NANOOPT ENGN | 237452 | 3% | 30% | 47 |
3 | UCSB GRP | 180155 | 1% | 54% | 20 |
4 | NICP | 121182 | 1% | 36% | 20 |
5 | SOLID STATE LIGHTING DISPLAY | 116662 | 0% | 100% | 7 |
6 | SEMICOND TECHNOL RD S | 80457 | 1% | 37% | 13 |
7 | NITRIDE SEMICOND | 69929 | 1% | 22% | 19 |
8 | JSTUCSB GRP | 66664 | 0% | 100% | 4 |
9 | USHI KU | 63139 | 1% | 32% | 12 |
10 | OPTOELEKT | 57124 | 1% | 29% | 12 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS EXPRESS | 34438 | 5% | 2% | 87 |
2 | JOURNAL OF CRYSTAL GROWTH | 26557 | 12% | 1% | 223 |
3 | APPLIED PHYSICS LETTERS | 21441 | 21% | 0% | 377 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS | 10413 | 5% | 1% | 100 |
5 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 9529 | 6% | 1% | 108 |
6 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 5196 | 4% | 0% | 79 |
7 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 3803 | 2% | 1% | 43 |
8 | JOURNAL OF APPLIED PHYSICS | 3628 | 9% | 0% | 156 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2383 | 2% | 0% | 42 |
10 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2112 | 2% | 0% | 45 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SEMIPOLAR | 758452 | 3% | 71% | 64 | Search SEMIPOLAR | Search SEMIPOLAR |
2 | NONPOLAR | 570752 | 5% | 41% | 84 | Search NONPOLAR | Search NONPOLAR |
3 | A PLANE GAN | 467202 | 2% | 97% | 29 | Search A+PLANE+GAN | Search A+PLANE+GAN |
4 | NON POLAR GAN | 335999 | 1% | 81% | 25 | Search NON+POLAR+GAN | Search NON+POLAR+GAN |
5 | SEMIPOLAR GAN | 304477 | 1% | 70% | 26 | Search SEMIPOLAR+GAN | Search SEMIPOLAR+GAN |
6 | M PLANE | 229350 | 1% | 81% | 17 | Search M+PLANE | Search M+PLANE |
7 | A PLANE | 179979 | 1% | 60% | 18 | Search A+PLANE | Search A+PLANE |
8 | R PLANE SAPPHIRE | 163027 | 1% | 65% | 15 | Search R+PLANE+SAPPHIRE | Search R+PLANE+SAPPHIRE |
9 | M PLANE GAN | 134993 | 0% | 90% | 9 | Search M+PLANE+GAN | Search M+PLANE+GAN |
10 | GAN | 119240 | 10% | 4% | 186 | Search GAN | Search GAN |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SCHOLZ, F , (2012) SEMIPOLAR GAN GROWN ON FOREIGN SUBSTRATES: A REVIEW.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 27. ISSUE 2. P. - | 106 | 80% | 76 |
2 | KELCHNER, KM , DENBAARS, SP , SPECKT, JS , (2012) GAN LASER DIODES ON NONPOLAR AND SEMIPOLAR PLANES.ADVANCES IN SEMICONDUCTOR LASERS. VOL. 86. ISSUE . P. 149 -182 | 108 | 84% | 1 |
3 | FARRELL, RM , YOUNG, EC , WU, F , DENBAARS, SP , SPECK, JS , (2012) MATERIALS AND GROWTH ISSUES FOR HIGH-PERFORMANCE NONPOLAR AND SEMIPOLAR LIGHT-EMITTING DEVICES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 27. ISSUE 2. P. - | 61 | 69% | 143 |
4 | PASKOVA, T , (2008) DEVELOPMENT AND PROSPECTS OF NITRIDE MATERIALS AND DEVICES WITH NONPOLAR SURFACES.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 245. ISSUE 6. P. 1011 -1025 | 80 | 73% | 71 |
5 | ZHAO, YJ , FARRELL, RM , WU, YR , SPECK, JS , (2014) VALENCE BAND STATES AND POLARIZED OPTICAL EMISSION FROM NONPOLAR AND SEMIPOLAR III-NITRIDE QUANTUM WELL OPTOELECTRONIC DEVICES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - | 64 | 85% | 9 |
6 | VENNEGUES, P , (2012) DEFECT REDUCTION METHODS FOR III-NITRIDE HETEROEPITAXIAL FILMS GROWN ALONG NONPOLAR AND SEMIPOLAR ORIENTATIONS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 27. ISSUE 2. P. - | 59 | 83% | 20 |
7 | MASUI, H , NAKAMURA, S , DENBAARS, SP , MISHRA, UK , (2010) NONPOLAR AND SEMIPOLAR III-NITRIDE LIGHT-EMITTING DIODES: ACHIEVEMENTS AND CHALLENGES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 1. P. 88 -100 | 64 | 65% | 110 |
8 | ADACHI, M , (2014) INGAN BASED GREEN LASER DIODES ON SEMIPOLAR GAN SUBSTRATE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - | 46 | 92% | 16 |
9 | KNEISSL, M , RASS, J , SCHADE, L , SCHWARZ, UT , (2013) GROWTH AND OPTICAL PROPERTIES OF GAN-BASED NON- AND SEMIPOLAR LEDS.III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS. VOL. 126. ISSUE . P. 83 -119 | 71 | 70% | 0 |
10 | LEUNG, B , WANG, DL , KUO, YS , HAN, J , (2016) COMPLETE ORIENTATIONAL ACCESS FOR SEMIPOLAR GAN DEVICES ON SAPPHIRE.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 253. ISSUE 1. P. 23 -35 | 48 | 79% | 1 |
Classes with closest relation at Level 1 |