Class information for:
Level 1: ALGAN GAN//CURRENT COLLAPSE//HEMT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
86 4514 20.1 80%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
86 1                   ALGAN GAN//CURRENT COLLAPSE//HEMT 4514

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ALGAN GAN authKW 1531892 7% 71% 320
2 CURRENT COLLAPSE authKW 707793 3% 93% 113
3 HEMT authKW 619547 6% 33% 275
4 HIGH ELECTRON MOBILITY TRANSISTOR HEMT authKW 573985 4% 48% 177
5 ALGAN GAN HEMT authKW 568602 3% 69% 122
6 GAN authKW 545114 14% 13% 624
7 NORMALLY OFF authKW 417636 2% 80% 77
8 HIGH ELECTRON MOBILITY TRANSISTORS authKW 364079 4% 31% 174
9 HIGH ELECTRON MOBILITY TRANSISTORS HEMTS authKW 276452 2% 53% 77
10 ALGAN authKW 246818 4% 23% 159

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 41743 61% 0% 2752
2 Engineering, Electrical & Electronic 25724 45% 0% 2009
3 Physics, Condensed Matter 4546 18% 0% 824
4 Nanoscience & Nanotechnology 2638 9% 0% 407
5 Materials Science, Multidisciplinary 1880 17% 0% 777
6 Physics, Multidisciplinary 681 7% 0% 331
7 Materials Science, Coatings & Films 350 2% 0% 112
8 Crystallography 135 2% 0% 97
9 Electrochemistry 5 1% 0% 43
10 Optics 2 2% 0% 85

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 WIDE BAND G SEMICOND MAT DEVICES 161798 2% 25% 94
2 NANODEVICE SYST 120194 1% 39% 46
3 PLICAT SPECIF INTEGRATED CIRCUIT A 119238 1% 77% 23
4 GAN DEVICE TECHNOL 88032 1% 52% 25
5 DISCRETE DEV TEAM 68189 0% 92% 11
6 MICROELECT 64686 9% 2% 406
7 IGBT PART 62942 0% 85% 11
8 RCIQE 55743 1% 25% 33
9 MICROELECT DEVICE INTEGRATED TECHNOL 48682 0% 60% 12
10 MICROELECT VLSI DESIGN GRP 48088 0% 89% 8

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 173695 11% 5% 481
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 43869 7% 2% 315
3 SOLID-STATE ELECTRONICS 26936 4% 2% 199
4 APPLIED PHYSICS EXPRESS 25172 3% 3% 117
5 APPLIED PHYSICS LETTERS 22072 13% 1% 606
6 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20199 3% 2% 155
7 MICROELECTRONICS RELIABILITY 15812 3% 2% 128
8 JAPANESE JOURNAL OF APPLIED PHYSICS 13444 4% 1% 179
9 CHINESE PHYSICS B 8030 2% 1% 109
10 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 7634 3% 1% 153

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 ALGAN GAN 1531892 7% 71% 320 Search ALGAN+GAN Search ALGAN+GAN
2 CURRENT COLLAPSE 707793 3% 93% 113 Search CURRENT+COLLAPSE Search CURRENT+COLLAPSE
3 HEMT 619547 6% 33% 275 Search HEMT Search HEMT
4 HIGH ELECTRON MOBILITY TRANSISTOR HEMT 573985 4% 48% 177 Search HIGH+ELECTRON+MOBILITY+TRANSISTOR+HEMT Search HIGH+ELECTRON+MOBILITY+TRANSISTOR+HEMT
5 ALGAN GAN HEMT 568602 3% 69% 122 Search ALGAN+GAN+HEMT Search ALGAN+GAN+HEMT
6 GAN 545114 14% 13% 624 Search GAN Search GAN
7 NORMALLY OFF 417636 2% 80% 77 Search NORMALLY+OFF Search NORMALLY+OFF
8 HIGH ELECTRON MOBILITY TRANSISTORS 364079 4% 31% 174 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS
9 HIGH ELECTRON MOBILITY TRANSISTORS HEMTS 276452 2% 53% 77 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS+HEMTS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS+HEMTS
10 ALGAN 246818 4% 23% 159 Search ALGAN Search ALGAN

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 YATABE, Z , ASUBAR, JT , HASHIZUME, T , (2016) INSULATED GATE AND SURFACE PASSIVATION STRUCTURES FOR GAN-BASED POWER TRANSISTORS.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 49. ISSUE 39. P. - 168 83% 1
2 ELLER, BS , YANG, JL , NEMANICH, RJ , (2013) ELECTRONIC SURFACE AND DIELECTRIC INTERFACE STATES ON GAN AND ALGAN.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 31. ISSUE 5. P. - 162 57% 43
3 YATABE, Z , HORI, Y , MA, WC , ASUBAR, JT , AKAZAWA, M , SATO, T , HASHIZUME, T , (2014) CHARACTERIZATION OF ELECTRONIC STATES AT INSULATOR/(AL)GAN INTERFACES FOR IMPROVED INSULATED GATE AND SURFACE PASSIVATION STRUCTURES OF GAN-BASED TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - 61 92% 12
4 KELLER, S , NIDHI, SD , DENNINGHOFF, DJ , KOLLURI, S , BROWN, DF , LU, J , FICHTENBAUM, NA , AHMADI, E , SINGISETTI, U , CHINI, A , ET AL (2013) N-POLAR GAN EPITAXY AND HIGH ELECTRON MOBILITY TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 28. ISSUE 7. P. - 103 53% 22
5 KUZUHARA, M , TOKUDA, H , (2015) LOW-LOSS AND HIGH-VOLTAGE III-NITRIDE TRANSISTORS FOR POWER SWITCHING APPLICATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 2. P. 405 -413 61 86% 7
6 WU, YF , KAZIOR, TE , SHEN, L , MISHRA, UK , (2008) GAN-BASED RF POWER DEVICES AND AMPLIFIERS.PROCEEDINGS OF THE IEEE. VOL. 96. ISSUE 2. P. 287 -305 41 91% 464
7 KUZUHARA, M , ASUBAR, JT , TOKUDA, H , (2016) ALGAN/GAN HIGH-ELECTRON-MOBILITY TRANSISTOR TECHNOLOGY FOR HIGH-VOLTAGE AND LOW-ON-RESISTANCE OPERATION.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 7. P. - 58 83% 2
8 LEE, DS , LIU, ZH , PALACIOS, T , (2014) GAN HIGH ELECTRON MOBILITY TRANSISTORS FOR SUB-MILLIMETER WAVE APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 10. P. - 51 86% 11
9 ZANONI, E , MENEGHINI, M , CHINI, A , MARCON, D , MENEGHESSO, G , (2013) ALGAN/GAN-BASED HEMTS FAILURE PHYSICS AND RELIABILITY: MECHANISMS AFFECTING GATE EDGE AND SCHOTTKY JUNCTION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 60. ISSUE 10. P. 3119 -3131 42 91% 30
10 MAEDA, N , HIROKI, M , WATANABE, N , ODA, Y , YOKOYAMA, H , YAGI, T , MAKIMOTO, T , ENOKI, T , KOBAYASHI, T , (2007) SYSTEMATIC STUDY OF INSULATOR DEPOSITION EFFECT (SI3N4, SIO2, ALN, AND AL2O3) ON ELECTRICAL PROPERTIES IN ALGAN/GAN HETEROSTRUCTURES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 46. ISSUE 2. P. 547 -554 46 100% 43

Classes with closest relation at Level 1


Rank Class id link
1 21167 GAN ON DIAMOND//DEVICE THERMOG RELIABIL//CHANNEL TEMPERATURE
2 17965 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//MAT SCI PL//MICROCATHODOLUMINESCENCE
3 34897 ALGAN GAN HBT//P INGAN//COMMON EMITTER
4 19691 FLUCTUAT//ELLIPSOIDAL VALLEYS//HOT PHONONS
5 8713 OHMIC CONTACT//P GAN//P TYPE GAN
6 16944 ALINN//INALN//AL1 XINXN
7 10237 ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX
8 16807 SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING
9 3942 GAN//METALORGANIC CHEMICAL VAPOR DEPOSITION//NITRIDES
10 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM

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