Class information for:
Level 1: GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
595 3269 21.1 74%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
178 3       GAN//PHYSICS, APPLIED//GALLIUM NITRIDE 57874
20 2             GAN//GALLIUM NITRIDE//NITRIDES 36496
595 1                   GAN//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH//YELLOW LUMINESCENCE 3269

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 GAN authKW 419824 14% 10% 466
2 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH journal 325905 4% 26% 132
3 YELLOW LUMINESCENCE authKW 158309 1% 63% 27
4 GALLIUM NITRIDE authKW 102458 4% 9% 128
5 GAN MG authKW 71834 0% 77% 10
6 RECH HETEROEPITAXIE PLICAT address 62865 1% 21% 32
7 SEMICOND SCI TECHNOL address 60906 2% 13% 52
8 P TYPE GAN authKW 56774 0% 41% 15
9 MG DOPED GAN authKW 47271 0% 56% 9
10 P TYPE ACTIVATION authKW 46695 0% 100% 5

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 26127 57% 0% 1861
2 Physics, Condensed Matter 9845 30% 0% 973
3 Materials Science, Multidisciplinary 5564 31% 0% 1000
4 Crystallography 4779 11% 0% 354
5 Materials Science, Coatings & Films 1081 5% 0% 150
6 Physics, Multidisciplinary 1012 10% 0% 316
7 Engineering, Electrical & Electronic 895 12% 0% 396
8 Materials Science, Characterization, Testing 201 1% 0% 37
9 Microscopy 107 1% 0% 24
10 Nanoscience & Nanotechnology 49 2% 0% 77

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 RECH HETEROEPITAXIE PLICAT 62865 1% 21% 32
2 SEMICOND SCI TECHNOL 60906 2% 13% 52
3 EPITAXIAL SEMICOND GRP 38911 0% 83% 5
4 ABT OPTOELEKT 34576 0% 37% 10
5 AKASAKI 30092 1% 16% 20
6 HIGH P SURE 28051 2% 6% 51
7 UNIP S 26246 0% 18% 16
8 CRHEA 25865 1% 8% 37
9 MICROSTRUCT ANAL UNIT 24576 1% 14% 19
10 CHICHIBU 23343 0% 50% 5

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 325905 4% 26% 132
2 JOURNAL OF CRYSTAL GROWTH 33482 10% 1% 335
3 APPLIED PHYSICS LETTERS 20713 15% 0% 498
4 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 12807 3% 1% 101
5 INSTITUTE OF PHYSICS CONFERENCE SERIES 11645 3% 1% 111
6 SEMICONDUCTORS AND SEMIMETALS 11465 1% 5% 25
7 JOURNAL OF APPLIED PHYSICS 7049 9% 0% 290
8 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 5492 3% 1% 85
9 JOURNAL OF ELECTRONIC MATERIALS 5006 2% 1% 73
10 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 3801 3% 0% 91

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 GAN 419824 14% 10% 466 Search GAN Search GAN
2 YELLOW LUMINESCENCE 158309 1% 63% 27 Search YELLOW+LUMINESCENCE Search YELLOW+LUMINESCENCE
3 GALLIUM NITRIDE 102458 4% 9% 128 Search GALLIUM+NITRIDE Search GALLIUM+NITRIDE
4 GAN MG 71834 0% 77% 10 Search GAN+MG Search GAN+MG
5 P TYPE GAN 56774 0% 41% 15 Search P+TYPE+GAN Search P+TYPE+GAN
6 MG DOPED GAN 47271 0% 56% 9 Search MG+DOPED+GAN Search MG+DOPED+GAN
7 P TYPE ACTIVATION 46695 0% 100% 5 Search P+TYPE+ACTIVATION Search P+TYPE+ACTIVATION
8 CONDUCTIVITY CONTROL 42686 0% 57% 8 Search CONDUCTIVITY+CONTROL Search CONDUCTIVITY+CONTROL
9 LOW TEMPERATURE BUFFER LAYER 37352 0% 67% 6 Search LOW+TEMPERATURE+BUFFER+LAYER Search LOW+TEMPERATURE+BUFFER+LAYER
10 BLUE LEDS 35150 0% 47% 8 Search BLUE+LEDS Search BLUE+LEDS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 RESHCHIKOV, MA , MORKOC, H , (2005) LUMINESCENCE PROPERTIES OF DEFECTS IN GAN.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 6. P. - 300 63% 825
2 VISWANATH, AK , (2001) GROWTH AND OPTICAL PROPERTIES OF GAN.PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS. VOL. 73. ISSUE . P. 63 -150 253 58% 1
3 ORTON, JW , FOXON, CT , (1998) GROUP III NITRIDE SEMICONDUCTORS FOR SHORT WAVELENGTH LIGHT-EMITTING DEVICES.REPORTS ON PROGRESS IN PHYSICS. VOL. 61. ISSUE 1. P. 1 -+ 136 59% 394
4 VAN DE WALLE, CG , NEUGEBAUER, J , (2004) FIRST-PRINCIPLES CALCULATIONS FOR DEFECTS AND IMPURITIES: APPLICATIONS TO III-NITRIDES.JOURNAL OF APPLIED PHYSICS. VOL. 95. ISSUE 8. P. 3851 -3879 83 53% 1199
5 SHEU, JK , CHI, GC , (2002) THE DOPING PROCESS AND DOPANT CHARACTERISTICS OF GAN.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 14. ISSUE 22. P. R657 -R702 99 63% 62
6 VISWANATH, AK , LEE, JI , YU, S , KIM, D , CHOI, Y , HONG, CH , (1998) PHOTOLUMINESCENCE STUDIES OF EXCITONIC TRANSITIONS IN GAN EPITAXIAL LAYERS.JOURNAL OF APPLIED PHYSICS. VOL. 84. ISSUE 7. P. 3848 -3859 68 77% 84
7 KERN, RS , GOTZ, W , CHEN, CH , LIU, H , FLETCHER, RM , KUO, CP , (2000) HIGH-BRIGHTNESS NITRIDE-BASED VISIBLE-LIGHT-EMITTING DIODES.ELECTROLUMINESCENCE I. VOL. 64. ISSUE . P. 129 -207 89 57% 0
8 STRITE, S , MORKOC, H , (1992) GAN, AIN, AND INN - A REVIEW.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 10. ISSUE 4. P. 1237 -1266 55 40% 2125
9 RESHCHIKOV, MA , (2015) POINT DEFECTS IN GAN.DEFECTS IN SEMICONDUCTORS. VOL. 91. ISSUE . P. 315 -367 57 55% 1
10 MONEMAR, B , PASKOV, PP , POZINA, G , HEMMINGSSON, C , BERGMAN, JP , KHROMOV, S , IZYUMSKAYA, VN , AVRUTIN, V , LI, X , MORKOC, H , ET AL (2014) PROPERTIES OF THE MAIN MG-RELATED ACCEPTORS IN GAN FROM OPTICAL AND STRUCTURAL STUDIES.JOURNAL OF APPLIED PHYSICS. VOL. 115. ISSUE 5. P. - 35 83% 10

Classes with closest relation at Level 1


Rank Class id link
1 10237 ETUD RECH MAT//GALLIUM NITRIDE//RECH PROPRIETES MAT NOUVEAUX
2 10075 HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH//BULK GAN
3 17965 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//MAT SCI PL//MICROCATHODOLUMINESCENCE
4 8959 CUBIC GAN//FB PHYS 6//CUBIC ALGAN
5 3942 GAN//METALORGANIC CHEMICAL VAPOR DEPOSITION//NITRIDES
6 17919 LIGAO2//ZNO SUBSTRATE//LITHIUM GALLIUM OXIDE
7 4053 ALGAN//SEMICONDUCTING ALUMINUM COMPOUNDS//ALINGAN
8 34897 ALGAN GAN HBT//P INGAN//COMMON EMITTER
9 344 INGAN//EFFICIENCY DROOP//LIGHT EMITTING DIODES
10 8875 GAN//AMORPHOUS GAN//GAGDN

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