Class information for:
Level 1: GAAS ON SI//GAAS SI//GAAS GE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
3121 2060 17.6 70%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
247 2             GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES 19852
3121 1                   GAAS ON SI//GAAS SI//GAAS GE 2060

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 GAAS ON SI authKW 759514 3% 78% 66
2 GAAS SI authKW 445856 2% 79% 38
3 GAAS GE authKW 109135 0% 82% 9
4 GAP ON SI authKW 90778 0% 88% 7
5 INP ON SI authKW 76222 0% 86% 6
6 ENVIRONM TECHNOL URBAN PLANNING address 63484 2% 10% 41
7 MICROSTRUCT DEVICES SHOWA KU address 61753 0% 83% 5
8 ALGAAS ON SI authKW 59285 0% 100% 4
9 GAAS ON GE authKW 59285 0% 100% 4
10 MICROSTRUCT DEVICES address 51606 1% 19% 18

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 30882 77% 0% 1579
2 Crystallography 6251 15% 0% 315
3 Materials Science, Multidisciplinary 3081 29% 0% 596
4 Engineering, Electrical & Electronic 1313 17% 0% 348
5 Physics, Condensed Matter 891 13% 0% 264
6 Materials Science, Coatings & Films 689 5% 0% 95
7 Nanoscience & Nanotechnology 448 6% 0% 122
8 Physics, Multidisciplinary 157 6% 0% 119
9 Optics 84 4% 0% 86
10 Microscopy 77 1% 0% 16

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ENVIRONM TECHNOL URBAN PLANNING 63484 2% 10% 41
2 MICROSTRUCT DEVICES SHOWA KU 61753 0% 83% 5
3 MICROSTRUCT DEVICES 51606 1% 19% 18
4 ADV DEVICES SENSOR SYST DEV 29642 0% 100% 2
5 INTER MEASUREMENT 29642 0% 100% 2
6 FOTON OHM 22229 0% 50% 3
7 CRG D2AM 19760 0% 67% 2
8 LOW ENERGY ELECT SYST IRG LEES 19760 0% 67% 2
9 ELECT COMP ENGN SHOWA KU 16670 0% 38% 3
10 MICRO STRUCT DEVICES 15683 0% 18% 6

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 39477 14% 1% 288
2 APPLIED PHYSICS LETTERS 16988 17% 0% 357
3 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 12986 5% 1% 103
4 JOURNAL OF APPLIED PHYSICS 7607 12% 0% 237
5 INSTITUTE OF PHYSICS CONFERENCE SERIES 6932 3% 1% 68
6 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 6776 4% 1% 88
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 5352 5% 0% 107
8 JOURNAL OF ELECTRONIC MATERIALS 3889 2% 1% 51
9 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1762 1% 0% 30
10 IEEE JOURNAL OF PHOTOVOLTAICS 1653 1% 1% 11

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 GAAS ON SI 759514 3% 78% 66 Search GAAS+ON+SI Search GAAS+ON+SI
2 GAAS SI 445856 2% 79% 38 Search GAAS+SI Search GAAS+SI
3 GAAS GE 109135 0% 82% 9 Search GAAS+GE Search GAAS+GE
4 GAP ON SI 90778 0% 88% 7 Search GAP+ON+SI Search GAP+ON+SI
5 INP ON SI 76222 0% 86% 6 Search INP+ON+SI Search INP+ON+SI
6 ALGAAS ON SI 59285 0% 100% 4 Search ALGAAS+ON+SI Search ALGAAS+ON+SI
7 GAAS ON GE 59285 0% 100% 4 Search GAAS+ON+GE Search GAAS+ON+GE
8 HETEROEPITAXY 49689 2% 7% 48 Search HETEROEPITAXY Search HETEROEPITAXY
9 THERMAL CYCLE ANNEALING 48409 0% 47% 7 Search THERMAL+CYCLE+ANNEALING Search THERMAL+CYCLE+ANNEALING
10 III V ON SI 46162 0% 35% 9 Search III+V+ON+SI Search III+V+ON+SI

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 FANG, SF , ADOMI, K , IYER, S , MORKOC, H , ZABEL, H , CHOI, C , OTSUKA, N , (1990) GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 7. P. R31 -R58 97 76% 402
2 DEMEESTER, P , ACKAERT, A , COUDENYS, G , MOERMAN, I , BUYDENS, L , POLLENTIER, I , VANDAELE, P , (1991) RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 22. ISSUE 1-2. P. 53-141 127 79% 27
3 BOLKHOVITYANOV, YB , PCHELYAKOV, OP , (2008) GAAS EPITAXY ON SI SUBSTRATES: MODERN STATUS OF RESEARCH AND ENGINEERING.PHYSICS-USPEKHI. VOL. 51. ISSUE 5. P. 437-456 85 41% 70
4 VAJARGAH, SH , WOO, SY , GHANAD-TAVAKOLI, S , KLEIMAN, RN , PRESTON, JS , BOTTON, GA , (2012) ATOMIC-RESOLUTION STUDY OF POLARITY REVERSAL IN GASB GROWN ON SI BY SCANNING TRANSMISSION ELECTRON MICROSCOPY.JOURNAL OF APPLIED PHYSICS. VOL. 112. ISSUE 9. P. - 40 89% 3
5 HUDAIT, MK , KRUPANIDHI, SB , (2001) SELF-ANNIHILATION OF ANTIPHASE BOUNDARIES IN GAAS EPILAYERS ON GE SUBSTRATES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY.JOURNAL OF APPLIED PHYSICS. VOL. 89. ISSUE 11. P. 5972-5979 39 93% 28
6 HOUDRE, R , MORKOC, H , (1990) PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 16. ISSUE 2. P. 91 -114 62 89% 26
7 BARRETT, CSC , MARTINA, TP , BAO, XY , KENNON, EL , GUTIERREZ, L , MARTIN, P , SANCHEZ, E , JONES, KS , (2016) EFFECT OF BULK GROWTH TEMPERATURE ON ANTIPHASE DOMAIN BOUNDARY ANNIHILATION RATE IN MOCVD-GROWN GAAS ON SI(001).JOURNAL OF CRYSTAL GROWTH. VOL. 450. ISSUE . P. 39 -44 25 81% 0
8 KAWANAMI, H , (2001) HETEROEPITAXIAL TECHNOLOGIES OF III-V ON SI.SOLAR ENERGY MATERIALS AND SOLAR CELLS. VOL. 66. ISSUE 1-4. P. 479-486 33 87% 27
9 WOO, SY , VAJARGAH, SH , GHANAD-TAVAKOLI, S , KLEIMAN, RN , BOTTON, GA , (2012) DIRECT OBSERVATION OF ANTI-PHASE BOUNDARIES IN HETEROEPITAXY OF GASB THIN FILMS GROWN ON SI(001) BY TRANSMISSION ELECTRON MICROSCOPY.JOURNAL OF APPLIED PHYSICS. VOL. 112. ISSUE 7. P. - 27 79% 1
10 JIN, YJ , CHIA, CK , LIU, HF , WONG, LM , CHAI, JW , CHI, DZ , WANG, SJ , (2016) P-TYPE GE EPITAXY ON GAAS (100) SUBSTRATE GROWN BY MOCVD.APPLIED SURFACE SCIENCE. VOL. 376. ISSUE . P. 236 -240 20 83% 2

Classes with closest relation at Level 1


Rank Class id link
1 8164 MISFIT DISLOCATION//ULTRAHIGH FREQUENCY SEMICOND ELECT//METAMORPHIC BUFFER
2 25598 EPITAXIAL LIFT OFF//FILM BONDING//SURFACE ACOUSTIC WAVE SEMICONDUCTOR COUPLED DEVICE
3 18090 GASB QUANTUM DOTS//GASB GAAS//GASB
4 28325 OVAL DEFECTS//INDIRECT GAP ALGAAS EPILAYERS//SEEIE
5 28095 GAAS1 XGE2X//ASYMMETRIC BANDGAP BOWING//FERROQUADRUPOLAR PHASE
6 5777 GESN//GERMANIUM TIN//L NESS
7 34938 BRANCHED WAVEGUIDE//PHOTONIC DOT//CMOS MICROPROCESSOR
8 14532 SELECTIVE AREA GROWTH//SELECTIVE EPITAXY//TERTIARYBUTYLCHLORIDE
9 14673 MICROCHANNEL EPITAXY//ELECTROEPITAXY//LIQUID PHASE ELECTROEPITAXY
10 8710 MULTIJUNCTION SOLAR CELLS//MULTIJUNCTION//CONCENTRATOR PHOTOVOLTAICS

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