Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
7568 | 1353 | 18.9 | 71% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
247 | 2 | GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES | 19852 |
7568 | 1 | REFLECTION MASS SPECTROMETRY//ROOT 19X ROOT 19//111B | 1353 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | REFLECTION MASS SPECTROMETRY | authKW | 50774 | 0% | 75% | 3 |
2 | ROOT 19X ROOT 19 | authKW | 45134 | 0% | 100% | 2 |
3 | 111B | authKW | 33180 | 0% | 29% | 5 |
4 | 2D ISLAND | authKW | 30088 | 0% | 67% | 2 |
5 | 2X2 | authKW | 30088 | 0% | 67% | 2 |
6 | PHYSISORBED MOLECULES | authKW | 30088 | 0% | 67% | 2 |
7 | JOURNAL OF CRYSTAL GROWTH | journal | 25610 | 14% | 1% | 188 |
8 | 1 1 1B | authKW | 22567 | 0% | 100% | 1 |
9 | 3D ISLAND GROWTH | authKW | 22567 | 0% | 100% | 1 |
10 | ADSORPTION ISLAND | authKW | 22567 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 10987 | 57% | 0% | 776 |
2 | Physics, Condensed Matter | 6012 | 36% | 0% | 482 |
3 | Crystallography | 4493 | 16% | 0% | 216 |
4 | Materials Science, Coatings & Films | 1500 | 8% | 0% | 108 |
5 | Materials Science, Multidisciplinary | 1188 | 23% | 0% | 313 |
6 | Nanoscience & Nanotechnology | 611 | 8% | 0% | 109 |
7 | Chemistry, Physical | 397 | 14% | 0% | 193 |
8 | Engineering, Electrical & Electronic | 281 | 11% | 0% | 148 |
9 | Physics, Multidisciplinary | 214 | 7% | 0% | 101 |
10 | Microscopy | 151 | 1% | 0% | 17 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | EXPTL PHYS FESTKORPERPHYS ABT | 22567 | 0% | 100% | 1 |
2 | FERNMELDETECH ZENTRALAMT | 22567 | 0% | 100% | 1 |
3 | FOR UNGS OPTOELEKTR | 22567 | 0% | 100% | 1 |
4 | MICROELECT SOLIF STATE ELECT | 22567 | 0% | 100% | 1 |
5 | NOVAS MAT SEMICOND | 22567 | 0% | 100% | 1 |
6 | PHYS ASTRON SUPERCOMP | 22567 | 0% | 100% | 1 |
7 | PHYS EXPTL FESTKORPERPHYS ABT | 22567 | 0% | 100% | 1 |
8 | PHYS SOLIDE CNRS | 22567 | 0% | 100% | 1 |
9 | SCI SYST SYST ENGN GRP OHTA KU | 22567 | 0% | 100% | 1 |
10 | SERV NANOSTRUCT RAYONNEMENT | 22567 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 25610 | 14% | 1% | 188 |
2 | SURFACE SCIENCE | 12347 | 9% | 0% | 122 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 11634 | 7% | 1% | 93 |
4 | SUPERLATTICES AND MICROSTRUCTURES | 6205 | 3% | 1% | 42 |
5 | APPLIED PHYSICS LETTERS | 4159 | 11% | 0% | 145 |
6 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 2035 | 2% | 0% | 30 |
7 | PHYSICAL REVIEW B | 1585 | 8% | 0% | 113 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1535 | 2% | 0% | 29 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1203 | 2% | 0% | 28 |
10 | APPLIED SURFACE SCIENCE | 1177 | 3% | 0% | 44 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | REFLECTION MASS SPECTROMETRY | 50774 | 0% | 75% | 3 | Search REFLECTION+MASS+SPECTROMETRY | Search REFLECTION+MASS+SPECTROMETRY |
2 | ROOT 19X ROOT 19 | 45134 | 0% | 100% | 2 | Search ROOT+19X+ROOT+19 | Search ROOT+19X+ROOT+19 |
3 | 111B | 33180 | 0% | 29% | 5 | Search 111B | Search 111B |
4 | 2D ISLAND | 30088 | 0% | 67% | 2 | Search 2D+ISLAND | Search 2D+ISLAND |
5 | 2X2 | 30088 | 0% | 67% | 2 | Search 2X2 | Search 2X2 |
6 | PHYSISORBED MOLECULES | 30088 | 0% | 67% | 2 | Search PHYSISORBED+MOLECULES | Search PHYSISORBED+MOLECULES |
7 | 1 1 1B | 22567 | 0% | 100% | 1 | Search 1+1+1B | Search 1+1+1B |
8 | 3D ISLAND GROWTH | 22567 | 0% | 100% | 1 | Search 3D+ISLAND+GROWTH | Search 3D+ISLAND+GROWTH |
9 | ADSORPTION ISLAND | 22567 | 0% | 100% | 1 | Search ADSORPTION+ISLAND | Search ADSORPTION+ISLAND |
10 | ALAS GROWTH MODES | 22567 | 0% | 100% | 1 | Search ALAS+GROWTH+MODES | Search ALAS+GROWTH+MODES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | EGELHOFF, WF , JACOB, I , (1989) REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) OSCILLATIONS AT 77-K.PHYSICAL REVIEW LETTERS. VOL. 62. ISSUE 8. P. 921-924 | 47 | 82% | 247 |
2 | HERMAN, MA , BIMBERG, D , CHRISTEN, J , (1991) HETEROINTERFACES IN QUANTUM-WELLS AND EPITAXIAL-GROWTH PROCESSES - EVALUATION BY LUMINESCENCE TECHNIQUES.JOURNAL OF APPLIED PHYSICS. VOL. 70. ISSUE 2. P. R1-R52 | 89 | 38% | 244 |
3 | INOUE, N , (1998) ELEMENTARY PRECESSES IN MOLECULAR BEAM EPITAXY STUDIED BY IN SITU SCANNING ELECTRON MICROSCOPY.SURFACE REVIEW AND LETTERS. VOL. 5. ISSUE 3-4. P. 881-897 | 26 | 74% | 2 |
4 | SHITARA, T , VVEDENSKY, DD , WILBY, MR , ZHANG, J , NEAVE, JH , JOYCE, BA , (1992) STEP-DENSITY VARIATIONS AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON VICINAL GAAS(001).PHYSICAL REVIEW B. VOL. 46. ISSUE 11. P. 6815 -6824 | 23 | 77% | 177 |
5 | MADHUKAR, A , GHAISAS, SV , (1988) THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS.CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 14. ISSUE 1. P. 1-130 | 34 | 64% | 133 |
6 | MORET, N , OBERLI, DY , PELUCCHI, E , GOGNEAU, N , RUDRA, A , KAPON, E , (2011) OPTICS, MORPHOLOGY, AND GROWTH KINETICS OF GAAS/ALXGA1-XAS QUANTUM WELLS GROWN ON VICINAL SUBSTRATES BY METALORGANIC VAPOR PHASE EPITAXY.PHYSICAL REVIEW B. VOL. 84. ISSUE 15. P. - | 26 | 45% | 0 |
7 | SHIN, B , LEONARD, JP , MCCAMY, JW , AZIZ, MJ , (2007) ON THE PHASE SHIFT OF REFLECTION HIGH ENERGY ELECTRON DIFFRACTION INTENSITY OSCILLATIONS DURING GE(001) HOMOEPITAXY BY MOLECULAR BEAM EPITAXY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 25. ISSUE 2. P. 221-224 | 15 | 79% | 7 |
8 | NYBERG, GL , KIEF, MT , EGELHOFF, WF , (1993) SPOT-PROFILE-ANALYZING LEED STUDY OF THE EPITAXIAL-GROWTH OF FE, CO, AND CU ON CU(100).PHYSICAL REVIEW B. VOL. 48. ISSUE 19. P. 14509 -14519 | 35 | 51% | 48 |
9 | DAWERITZ, L , PLOOG, K , (1994) CONTRIBUTION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TO NANOMETER TAILORING OF SURFACES AND INTERFACES BY MOLECULAR-BEAM EPITAXY.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 9. ISSUE 2. P. 123-136 | 36 | 48% | 20 |
10 | FOXON, CT , (1989) CURRENT UNDERSTANDING OF GROWTH MECHANISMS IN III-V MBE.JOURNAL OF CRYSTAL GROWTH. VOL. 95. ISSUE 1-4. P. 11-16 | 24 | 92% | 9 |
Classes with closest relation at Level 1 |