Class information for:
Level 1: INSB//SEMICOND PHYS NANOSTRUCT//INASSB

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
13017 865 17.7 62%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
247 2             GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES 19852
13017 1                   INSB//SEMICOND PHYS NANOSTRUCT//INASSB 865

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 INSB authKW 364925 6% 19% 54
2 SEMICOND PHYS NANOSTRUCT address 348649 3% 45% 22
3 INASSB authKW 270599 3% 33% 23
4 MELT EPITAXY authKW 211797 1% 100% 6
5 INSB THIN FILMS authKW 141198 0% 100% 4
6 III V SEMICONDUCTOR P N DIODES AND HETEROJUNCTIONS authKW 105899 0% 100% 3
7 INAS HALL ELEMENT authKW 105899 0% 100% 3
8 INSB QUANTUM WELL authKW 94129 0% 67% 4
9 COMPOUND SEMICOND DEV address 80221 1% 45% 5
10 ALSB BUFFER LAYER authKW 70599 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 8182 62% 0% 533
2 Crystallography 2177 14% 0% 121
3 Materials Science, Multidisciplinary 2114 36% 0% 310
4 Physics, Condensed Matter 1919 26% 0% 224
5 Materials Science, Coatings & Films 815 7% 0% 64
6 Engineering, Electrical & Electronic 696 19% 0% 161
7 Nanoscience & Nanotechnology 382 8% 0% 69
8 Physics, Multidisciplinary 70 6% 0% 51
9 Materials Science, Characterization, Testing 56 1% 0% 10
10 Instruments & Instrumentation 27 3% 0% 23

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICOND PHYS NANOSTRUCT 348649 3% 45% 22
2 COMPOUND SEMICOND DEV 80221 1% 45% 5
3 SEMICONDUCTOR PHYS NANOSTRUCT 70599 0% 100% 2
4 ELECT PROPERTIES MAT 57170 1% 18% 9
5 ELECT NANOSCALE 47065 0% 67% 2
6 SEMICOND PHYS TECHNOL 39708 0% 38% 3
7 ADV DELIVERY CHEM SYST 35300 0% 100% 1
8 ALLIAGE 35300 0% 100% 1
9 CI OS 35300 0% 100% 1
10 DAEHAK RO 93 35300 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 12953 12% 0% 107
2 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 7047 5% 1% 40
3 APPLIED PHYSICS LETTERS 3644 12% 0% 108
4 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 3011 4% 0% 38
5 INSTITUTE OF PHYSICS CONFERENCE SERIES 2409 3% 0% 26
6 JOURNAL OF APPLIED PHYSICS 1930 9% 0% 78
7 JOURNAL OF ELECTRONIC MATERIALS 1569 2% 0% 21
8 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 1363 2% 0% 18
9 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 832 0% 1% 2
10 THIN SOLID FILMS 830 3% 0% 30

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 INSB 364925 6% 19% 54 Search INSB Search INSB
2 INASSB 270599 3% 33% 23 Search INASSB Search INASSB
3 MELT EPITAXY 211797 1% 100% 6 Search MELT+EPITAXY Search MELT+EPITAXY
4 INSB THIN FILMS 141198 0% 100% 4 Search INSB+THIN+FILMS Search INSB+THIN+FILMS
5 III V SEMICONDUCTOR P N DIODES AND HETEROJUNCTIONS 105899 0% 100% 3 Search III+V+SEMICONDUCTOR+P+N+DIODES+AND+HETEROJUNCTIONS Search III+V+SEMICONDUCTOR+P+N+DIODES+AND+HETEROJUNCTIONS
6 INAS HALL ELEMENT 105899 0% 100% 3 Search INAS+HALL+ELEMENT Search INAS+HALL+ELEMENT
7 INSB QUANTUM WELL 94129 0% 67% 4 Search INSB+QUANTUM+WELL Search INSB+QUANTUM+WELL
8 ALSB BUFFER LAYER 70599 0% 100% 2 Search ALSB+BUFFER+LAYER Search ALSB+BUFFER+LAYER
9 GAINASSB INAS 70599 0% 100% 2 Search GAINASSB+INAS Search GAINASSB+INAS
10 IN4 X 1RECONSTRUCTION 70599 0% 100% 2 Search IN4+X+1RECONSTRUCTION Search IN4+X+1RECONSTRUCTION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 KHAMSEH, S , YASUI, Y , NAKAYAMA, K , NAKATANI, K , MORI, M , MAEZAWA, K , (2011) EFFECTS OF DEPOSITION CONDITIONS OF FIRST INSB LAYER ON ELECTRICAL PROPERTIES OF N-TYPE INSB FILMS GROWN WITH TWO-STEP GROWTH METHOD VIA INSB BILAYER.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 4. P. - 19 95% 1
2 KIM, YH , LEE, JY , NOH, YG , KIM, MD , KWON, YJ , OH, JE , GRONSKY, R , (2006) EFFECT OF TWO-STEP GROWTH ON THE HETEROEPITAXIAL GROWTH OF INSB THIN FILM ON SI (001) SUBSTRATE: A TRANSMISSION ELECTRON MICROSCOPY STUDY.APPLIED PHYSICS LETTERS. VOL. 89. ISSUE 3. P. - 20 100% 7
3 SUN, CH , WANG, QW , QIU, F , LV, YF , DENG, HY , HU, SH , DAI, N , (2012) SINGLE CRYSTALLINE INASXSB1 (-) (X) FILMS WITH CUT-OFF WAVELENGTH OF 7-8 MU M GROWN ON (100) INSB SUBSTRATES BY LIQUID PHASE EPITAXY.JOURNAL OF ALLOYS AND COMPOUNDS. VOL. 535. ISSUE . P. 39-43 18 86% 4
4 KRIER, A , MAO, Y , (1995) ELECTRICAL-TRANSPORT PROPERTIES AND PHOTOLUMINESCENCE OF LATTICE-MATCHED INAS0.91SB0.09 ON GASB GROWN BY LIQUID-PHASE EPITAXY.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 10. ISSUE 7. P. 930-936 28 88% 4
5 TEVKE, A , BESIKCI, C , VAN HOOF, C , BORGHS, G , (1998) INSB INFRARED P-I-N PHOTODETECTORS GROWN ON GAAS COATED SI SUBSTRATES BY MOLECULAR BEAM EPITAXY.SOLID-STATE ELECTRONICS. VOL. 42. ISSUE 6. P. 1039-1044 21 95% 5
6 HU, SH , DENG, HY , SUN, Y , WU, J , SHANG, LY , LIN, T , WANG, R , DAI, N , (2008) MODIFIED LPE TECHNIQUE GROWTH AND PROPERTIES OF LONG WAVELENGTH INAS0.05SB0.95 THICK FILM.JOURNAL OF ALLOYS AND COMPOUNDS. VOL. 465. ISSUE 1-2. P. 442-445 17 85% 2
7 DIXIT, VK , BANSAL, B , VENKATARAMAN, V , BHAT, HL , SUBBANNA, GN , CHANDRASEKHARAN, KS , ARORA, BM , (2002) HIGH-MOBILITY INSB EPITAXIAL FILMS GROWN ON A GAAS (001) SUBSTRATE USING LIQUID-PHASE EPITAXY.APPLIED PHYSICS LETTERS. VOL. 80. ISSUE 12. P. 2102-2104 18 90% 12
8 MORI, M , FUJIMOTO, N , AKAE, N , UOTANI, K , TAMBO, T , TATSUYAMA, C , (2006) HETEROEPITAXY OF INSB FILMS GROWN ON A SI(001) SUBSTRATE WITH ALSB BUFFER LAYER.JOURNAL OF CRYSTAL GROWTH. VOL. 286. ISSUE 2. P. 218-222 16 89% 8
9 BESIKCI, C , OZER, S , VAN HOOF, C , ZIMMERMANN, L , JOHN, J , MERKEN, P , (2001) CHARACTERISTICS OF INAS(0.8)SB(0.2) PHOTODETECTORS ON GAAS SUBSTRATES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 16. ISSUE 12. P. 992-996 19 83% 10
10 MISHIMA, TD , SANTOS, MB , (2012) REGRESSION ANALYSIS FOR TRANSPORT ELECTRON SCATTERING CAUSED BY STRUCTURAL DEFECTS IN INSB QUANTUM WELLS: APPLICATION OF MATTHIESSEN'S FORMULA.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 6. P. - 17 68% 0

Classes with closest relation at Level 1


Rank Class id link
1 31535 FIELD INDUCED JUNCTION//INSB GATE CONTROLLED DIODE//PIXEL LINEARITY
2 9444 GASB//GAINASSB//GALLIUM ANTIMONIDE
3 5717 INTERBAND CASCADE LASER//NEGATIVE LUMINESCENCE//MID INFRARED LASERS
4 18383 GAASBI//DILUTE BISMIDES//BISMIDES
5 5159 INAS GASB//TYPE II SUPERLATTICE//INAS GASB SUPERLATTICE
6 18090 GASB QUANTUM DOTS//GASB GAAS//GASB
7 25211 ELECTRIC DIPOLE INDUCED SPIN RESONANCE//CYCROTRON RESONANCE//ELECTROMAGNETICALLY
8 28747 ALSB//1 2 METHOXY BENZYLOXY 8 HYDROXY 9 10 ANTHRAQUINONE//1 8 BIS3 HYDROXYPROPYLAMINO 1 3 HYDROXYPROPYLAMINO 9 10 ANTHRAQUINONE
9 8164 MISFIT DISLOCATION//ULTRAHIGH FREQUENCY SEMICOND ELECT//METAMORPHIC BUFFER
10 37339 RADIOACTIVITY LU 171//984 KEV YB 171//BETA DECAY TO ROTATIONAL BANDS

Go to start page