Class information for:
Level 1: GASB//GAINASSB//GALLIUM ANTIMONIDE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
9444 1155 18.9 56%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
247 2             GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES 19852
9444 1                   GASB//GAINASSB//GALLIUM ANTIMONIDE 1155

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 GASB authKW 381474 6% 22% 67
2 GAINASSB authKW 183502 2% 37% 19
3 GALLIUM ANTIMONIDE authKW 174123 2% 24% 28
4 HEAVILY DOPED P GAAS authKW 79308 0% 100% 3
5 NOVEL MATERIALS AND TECHNOLOGICAL ADVANCES FOR PHOTONICS authKW 79308 0% 100% 3
6 UNIDAD PUEBLA address 70493 0% 67% 4
7 GAINSB authKW 63439 1% 40% 6
8 ANTIMONIDES authKW 61159 3% 7% 31
9 ALGAASSB authKW 58871 1% 32% 7
10 GAAS GASB authKW 52872 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 9548 58% 0% 668
2 Crystallography 3775 16% 0% 183
3 Physics, Condensed Matter 3309 29% 0% 336
4 Materials Science, Multidisciplinary 2106 32% 0% 364
5 Engineering, Electrical & Electronic 920 19% 0% 214
6 Materials Science, Coatings & Films 320 4% 0% 49
7 Physics, Multidisciplinary 129 7% 0% 76
8 Nanoscience & Nanotechnology 41 3% 0% 35
9 Optics 40 4% 0% 46
10 Materials Science, Characterization, Testing 22 1% 0% 8

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 UNIDAD PUEBLA 70493 0% 67% 4
2 PROGRAM FIS JURUSAN 52872 0% 100% 2
3 ELE MONTPELLIER CNRS URA 391 35247 0% 67% 2
4 01125MS 0601 26436 0% 100% 1
5 01126MS 0601 26436 0% 100% 1
6 AV SHUBNIKOVS CRISTALLOG 26436 0% 100% 1
7 CHEM TECHNOL SOLID STATE ENGN 26436 0% 100% 1
8 CNRS UMR 5507 CEM2 26436 0% 100% 1
9 DFA FIS 26436 0% 100% 1
10 EPSRC IL MAT 3 4 26436 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 19336 13% 0% 151
2 SOVIET PHYSICS SEMICONDUCTORS-USSR 7911 4% 1% 41
3 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6371 4% 1% 44
4 JOURNAL OF ELECTRONIC MATERIALS 5451 4% 0% 45
5 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 5412 3% 1% 39
6 JOURNAL OF APPLIED PHYSICS 3760 11% 0% 125
7 SOLID-STATE ELECTRONICS 1913 2% 0% 27
8 APPLIED PHYSICS LETTERS 1704 8% 0% 87
9 CRYSTAL RESEARCH AND TECHNOLOGY 1594 2% 0% 20
10 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1200 2% 0% 28

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 GASB 381474 6% 22% 67 Search GASB Search GASB
2 GAINASSB 183502 2% 37% 19 Search GAINASSB Search GAINASSB
3 GALLIUM ANTIMONIDE 174123 2% 24% 28 Search GALLIUM+ANTIMONIDE Search GALLIUM+ANTIMONIDE
4 HEAVILY DOPED P GAAS 79308 0% 100% 3 Search HEAVILY+DOPED+P+GAAS Search HEAVILY+DOPED+P+GAAS
5 NOVEL MATERIALS AND TECHNOLOGICAL ADVANCES FOR PHOTONICS 79308 0% 100% 3 Search NOVEL+MATERIALS+AND+TECHNOLOGICAL+ADVANCES+FOR+PHOTONICS Search NOVEL+MATERIALS+AND+TECHNOLOGICAL+ADVANCES+FOR+PHOTONICS
6 GAINSB 63439 1% 40% 6 Search GAINSB Search GAINSB
7 ANTIMONIDES 61159 3% 7% 31 Search ANTIMONIDES Search ANTIMONIDES
8 ALGAASSB 58871 1% 32% 7 Search ALGAASSB Search ALGAASSB
9 GAAS GASB 52872 0% 100% 2 Search GAAS+GASB Search GAAS+GASB
10 GAINASSB SEMICONDUCTORS 52872 0% 100% 2 Search GAINASSB+SEMICONDUCTORS Search GAINASSB+SEMICONDUCTORS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 DUTTA, PS , BHAT, HL , KUMAR, V , (1997) THE PHYSICS AND TECHNOLOGY OF GALLIUM ANTIMONIDE: AN EMERGING OPTOELECTRONIC MATERIAL.JOURNAL OF APPLIED PHYSICS. VOL. 81. ISSUE 9. P. 5821 -5870 146 64% 449
2 WANG, CA , (2004) PROGRESS AND CONTINUING CHALLENGES IN GASB-BASED III-V ALLOYS AND HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 272. ISSUE 1-4. P. 664-681 51 63% 33
3 AARDVARK, A , MASON, NJ , WALKER, PJ , (1997) THE GROWTH OF ANTIMONIDES BY MOVPE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 35. ISSUE 2-4. P. 207-241 90 37% 36
4 HURST, WS , WANG, CA , MASLAR, JE , (2009) RAMAN SPECTROSCOPIC DETERMINATION OF ELECTRON CONCENTRATION IN N-TYPE GAINASSB.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 12. P. - 26 72% 3
5 MILNES, AG , POLYAKOV, AY , (1993) GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES.SOLID-STATE ELECTRONICS. VOL. 36. ISSUE 6. P. 803-818 49 52% 158
6 BIEFELD, RM , (2002) THE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION AND PROPERTIES OF III-V ANTIMONY-BASED SEMICONDUCTOR MATERIALS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 36. ISSUE 4. P. 105 -142 63 32% 67
7 MASLAR, JE , HURST, WS , WANG, CA , (2008) SPECTROSCOPIC DETERMINATION OF ELECTRON CONCENTRATION IN N-TYPE GASB.JOURNAL OF APPLIED PHYSICS. VOL. 104. ISSUE 10. P. - 25 71% 1
8 PARISINI, A , BALDINI, M , GOMBIA, E , FRIGERI, C , JAKOMIN, R , TARRICONE, L , (2013) ELECTRICAL AND INTERFACIAL PROPERTIES OF GAAS/GASB METAL-ORGANIC VAPOUR PHASE EPITAXY HETEROSTRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 4. P. - 18 86% 1
9 RAHIMI, N , ARAGON, AA , ROMERO, OS , SHIMA, DM , ROTTER, TJ , MUKHERJEE, SD , BALAKRISHNAN, G , LESTER, LF , (2013) ELECTRICAL AND MICROSTRUCTURE ANALYSIS OF NICKEL-BASED LOW-RESISTANCE OHMIC CONTACTS TO N-GASB.APL MATERIALS. VOL. 1. ISSUE 6. P. - 17 77% 7
10 MARTIN, D , ALGORA, C , (2004) TEMPERATURE-DEPENDENT GASB MATERIAL PARAMETERS FOR RELIABLE THERMOPHOTOVOLTAIC CELL MODELLING.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 19. ISSUE 8. P. 1040-1052 23 72% 24

Classes with closest relation at Level 1


Rank Class id link
1 5717 INTERBAND CASCADE LASER//NEGATIVE LUMINESCENCE//MID INFRARED LASERS
2 27197 GAASSB//INGAAS GAASSB//BILAYER QUANTUM WELL
3 13017 INSB//SEMICOND PHYS NANOSTRUCT//INASSB
4 28929 NANOPOROUS GERMANIUM//THIN FOIL IRRADIATION//TIN ION
5 5159 INAS GASB//TYPE II SUPERLATTICE//INAS GASB SUPERLATTICE
6 18090 GASB QUANTUM DOTS//GASB GAAS//GASB
7 14673 MICROCHANNEL EPITAXY//ELECTROEPITAXY//LIQUID PHASE ELECTROEPITAXY
8 22781 DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS
9 7316 JOURNAL OF CRYSTAL GROWTH//BRIDGMAN TECHNIQUE//ACRT
10 8736 THERMOPHOTOVOLTAICS//NEAR FIELD THERMAL RADIATION//RADIAT ENERGY TRANSFER

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