Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
16019 | 677 | 17.6 | 76% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
247 | 2 | GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES | 19852 |
16019 | 1 | INASP INP//INASP//FDN CPQD | 677 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | INASP INP | authKW | 144327 | 1% | 80% | 4 |
2 | INASP | authKW | 111011 | 1% | 31% | 8 |
3 | FDN CPQD | address | 90205 | 0% | 100% | 2 |
4 | INAS06P04 | authKW | 90205 | 0% | 100% | 2 |
5 | NOWON KU | address | 84329 | 3% | 10% | 19 |
6 | FDN PESQUISA DESENVOLVIMENTO TELECOMUN | address | 60135 | 0% | 67% | 2 |
7 | JOINT IL | address | 57986 | 0% | 43% | 3 |
8 | 0 20 X RAY DIFFRACTION XRD | authKW | 45103 | 0% | 100% | 1 |
9 | 13 MU M INASP INP LASER DIODE | authKW | 45103 | 0% | 100% | 1 |
10 | AL FREE HEMTS | authKW | 45103 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 8390 | 70% | 0% | 474 |
2 | Crystallography | 2422 | 17% | 0% | 112 |
3 | Physics, Condensed Matter | 1142 | 23% | 0% | 155 |
4 | Materials Science, Multidisciplinary | 830 | 27% | 0% | 180 |
5 | Engineering, Electrical & Electronic | 428 | 17% | 0% | 114 |
6 | Materials Science, Coatings & Films | 274 | 5% | 0% | 34 |
7 | Nanoscience & Nanotechnology | 156 | 6% | 0% | 41 |
8 | Physics, Multidisciplinary | 73 | 6% | 0% | 44 |
9 | Microscopy | 34 | 1% | 0% | 6 |
10 | Materials Science, Characterization, Testing | 23 | 1% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FDN CPQD | 90205 | 0% | 100% | 2 |
2 | NOWON KU | 84329 | 3% | 10% | 19 |
3 | FDN PESQUISA DESENVOLVIMENTO TELECOMUN | 60135 | 0% | 67% | 2 |
4 | JOINT IL | 57986 | 0% | 43% | 3 |
5 | ASSOC BRASILEIRA TECNOL LUZ SINCROTRON | 45103 | 0% | 100% | 1 |
6 | CNRS LAMI | 45103 | 0% | 100% | 1 |
7 | CONSEJO NACL INVEST CIENT TECN FIS SOLIDO | 45103 | 0% | 100% | 1 |
8 | EPSRC SEMICOND IL | 45103 | 0% | 100% | 1 |
9 | ESTUDIOS TELECOMUN | 45103 | 0% | 100% | 1 |
10 | FOR UNGSZENTRUM ICHTEN IONEN TECH | 45103 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 15383 | 15% | 0% | 103 |
2 | APPLIED PHYSICS LETTERS | 7657 | 20% | 0% | 137 |
3 | JOURNAL OF APPLIED PHYSICS | 3213 | 13% | 0% | 88 |
4 | JOURNAL OF ELECTRONIC MATERIALS | 3104 | 4% | 0% | 26 |
5 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 2631 | 4% | 0% | 24 |
6 | SUPERLATTICES AND MICROSTRUCTURES | 2272 | 3% | 0% | 18 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1937 | 4% | 0% | 27 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1088 | 2% | 0% | 14 |
9 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 863 | 2% | 0% | 12 |
10 | SOLID STATE COMMUNICATIONS | 606 | 3% | 0% | 19 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | INASP INP | 144327 | 1% | 80% | 4 | Search INASP+INP | Search INASP+INP |
2 | INASP | 111011 | 1% | 31% | 8 | Search INASP | Search INASP |
3 | INAS06P04 | 90205 | 0% | 100% | 2 | Search INAS06P04 | Search INAS06P04 |
4 | 0 20 X RAY DIFFRACTION XRD | 45103 | 0% | 100% | 1 | Search 0+20+X+RAY+DIFFRACTION+XRD | Search 0+20+X+RAY+DIFFRACTION+XRD |
5 | 13 MU M INASP INP LASER DIODE | 45103 | 0% | 100% | 1 | Search 13+MU+M+INASP+INP+LASER+DIODE | Search 13+MU+M+INASP+INP+LASER+DIODE |
6 | AL FREE HEMTS | 45103 | 0% | 100% | 1 | Search AL+FREE+HEMTS | Search AL+FREE+HEMTS |
7 | ALGAAS ALAS MIRROR | 45103 | 0% | 100% | 1 | Search ALGAAS+ALAS+MIRROR | Search ALGAAS+ALAS+MIRROR |
8 | ARBITRARY RELAXATION RATE | 45103 | 0% | 100% | 1 | Search ARBITRARY+RELAXATION+RATE | Search ARBITRARY+RELAXATION+RATE |
9 | AS CARRYOVER | 45103 | 0% | 100% | 1 | Search AS+CARRYOVER | Search AS+CARRYOVER |
10 | AS P REPLACEMENT | 45103 | 0% | 100% | 1 | Search AS+P+REPLACEMENT | Search AS+P+REPLACEMENT |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GERHARDT, M , KIRPAL, G , SCHWABE, R , BENNDORF, G , GOTTSCHALCH, V , (2001) THE INFLUENCE OF ALTERNATIVE GROUP-V SOURCES ON HETEROINTERFACE QUALITY IN THE SYSTEM GAINAS(P) ON INP.THIN SOLID FILMS. VOL. 392. ISSUE 1. P. 85-90 | 18 | 95% | 2 |
2 | CAMPI, R , CODATO, S , SOLDANI, D , (2004) STRAIN EFFECTS ON HIGHLY STRAINED INASP/INGAP MULTI-QUANTUM WELL STRUCTURES GROWN BY MOVPE USING TBAS AND TBP.JOURNAL OF CRYSTAL GROWTH. VOL. 265. ISSUE 3-4. P. 357-366 | 16 | 73% | 1 |
3 | MOZUME, T , KASHIMA, H , HOSOMI, K , OUCHI, K , SATO, H , MASUDA, H , TANOUE, T , OHBU, I , (1995) OPTIMIZATION OF INTERFACES IN INGAAS/INP HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 13. ISSUE 2. P. 276-280 | 16 | 94% | 9 |
4 | MOON, Y , LEE, TW , YOON, S , YOO, K , YOON, E , (2000) OBSERVATION OF TWO INDEPENDENT SOURCES FOR ARSENIC CARRYOVER.JOURNAL OF CRYSTAL GROWTH. VOL. 208. ISSUE 1-4. P. 160-164 | 13 | 93% | 5 |
5 | SEIFERT, W , HESSMAN, D , LIU, X , SAMUELSON, L , (1994) FORMATION OF INTERFACE LAYERS IN GAXIN1-XAS/INP HETEROSTRUCTURES - A REEVALUATION USING ULTRATHIN QUANTUM-WELLS AS A PROBE.JOURNAL OF APPLIED PHYSICS. VOL. 75. ISSUE 3. P. 1501-1510 | 20 | 71% | 34 |
6 | BEAUDOIN, M , DESJARDINS, P , AIT-OUALI, A , BREBNER, JL , YIP, RYF , MARCHAND, H , ISNARD, L , MASUT, RA , (2000) OPTICAL PROPERTIES AND HETEROJUNCTION BAND ALIGNMENT IN FULLY COHERENT STRAIN-COMPENSATED INASXP1-X/GAYIN1-YP MULTILAYERS ON INP(001).JOURNAL OF APPLIED PHYSICS. VOL. 87. ISSUE 5. P. 2320 -2326 | 18 | 67% | 3 |
7 | SEIFERT, W , DEPPERT, K , FORNELL, JO , LIU, X , NILSSON, S , PISTOL, ME , SAMUELSON, L , (1992) ANALYSIS OF GROWTH-CONDITIONS FOR THE DEPOSITION OF MONOLAYERS OF GAINAS, GAAS AND INAS IN INP BY LP-MOVPE.JOURNAL OF CRYSTAL GROWTH. VOL. 124. ISSUE 1-4. P. 531-535 | 17 | 94% | 5 |
8 | DECOBERT, J , PATRIARCHE, G , (2002) TRANSMISSION ELECTRON MICROSCOPY STUDY OF THE INP/INGAAS AND INGAAS/INP HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY.JOURNAL OF APPLIED PHYSICS. VOL. 92. ISSUE 10. P. 5749-5755 | 14 | 74% | 35 |
9 | CORNET, DM , LAPIERRE, RR , COMEDI, D , PUSEP, YA , (2006) HIGH RESOLUTION X-RAY DIFFRACTION ANALYSIS OF INGAAS/INP SUPERLATTICES.JOURNAL OF APPLIED PHYSICS. VOL. 100. ISSUE 4. P. - | 13 | 72% | 5 |
10 | DISSEIX, P , PAYEN, C , LEYMARIE, J , VASSON, A , MOLLOT, F , (2000) THERMALLY DETECTED OPTICAL ABSORPTION, REFLECTANCE, AND PHOTOREFLECTANCE OF IN(AS,P)/INP QUANTUM WELLS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY.JOURNAL OF APPLIED PHYSICS. VOL. 88. ISSUE 8. P. 4612 -4618 | 19 | 56% | 2 |
Classes with closest relation at Level 1 |