Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
27197 | 235 | 17.2 | 76% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
247 | 2 | GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES | 19852 |
27197 | 1 | GAASSB//INGAAS GAASSB//BILAYER QUANTUM WELL | 235 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAASSB | authKW | 1088751 | 11% | 31% | 27 |
2 | INGAAS GAASSB | authKW | 668249 | 3% | 86% | 6 |
3 | BILAYER QUANTUM WELL | authKW | 389813 | 1% | 100% | 3 |
4 | GAASSB GAAS | authKW | 389813 | 1% | 100% | 3 |
5 | MBE GRP | address | 292358 | 1% | 75% | 3 |
6 | NON MARKOVIAN GAIN MODEL | authKW | 292358 | 1% | 75% | 3 |
7 | OPT INTERCONNECT NEC | address | 292358 | 1% | 75% | 3 |
8 | GAASSB GAAS LASER | authKW | 259875 | 1% | 100% | 2 |
9 | TYPE II QUANTUM WELL | authKW | 173241 | 3% | 22% | 6 |
10 | TYPE II | authKW | 160447 | 7% | 7% | 17 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2262 | 62% | 0% | 146 |
2 | Crystallography | 523 | 13% | 0% | 31 |
3 | Engineering, Electrical & Electronic | 472 | 28% | 0% | 65 |
4 | Materials Science, Multidisciplinary | 168 | 21% | 0% | 50 |
5 | Physics, Multidisciplinary | 154 | 13% | 0% | 31 |
6 | Physics, Condensed Matter | 127 | 14% | 0% | 33 |
7 | Nanoscience & Nanotechnology | 94 | 8% | 0% | 18 |
8 | Optics | 39 | 7% | 0% | 16 |
9 | Materials Science, Coatings & Films | 7 | 2% | 0% | 4 |
10 | Materials Science, Ceramics | 1 | 1% | 0% | 2 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MBE GRP | 292358 | 1% | 75% | 3 |
2 | OPT INTERCONNECT NEC | 292358 | 1% | 75% | 3 |
3 | NEXT GENERAT MOBLIE | 129938 | 0% | 100% | 1 |
4 | PRINCE CONSORT RD | 129938 | 0% | 100% | 1 |
5 | CSSER | 64968 | 0% | 50% | 1 |
6 | ELECT MAT PROCESSING | 64968 | 0% | 50% | 1 |
7 | ELR SOLID STATE ELE DIRECTORATE | 64968 | 0% | 50% | 1 |
8 | SUPPERLATTICE MICROSTRUCT | 64968 | 0% | 50% | 1 |
9 | PHOTON INFORMAT ENGN | 55682 | 1% | 14% | 3 |
10 | PHYS SEMICOND SCI | 50120 | 3% | 6% | 7 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 3750 | 13% | 0% | 30 |
2 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2415 | 7% | 0% | 17 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1982 | 7% | 0% | 16 |
4 | JOURNAL OF APPLIED PHYSICS | 1227 | 14% | 0% | 32 |
5 | ELECTRONICS LETTERS | 1179 | 8% | 0% | 19 |
6 | APPLIED PHYSICS LETTERS | 966 | 12% | 0% | 29 |
7 | SEMICONDUCTORS | 935 | 3% | 0% | 7 |
8 | ANNUAL REVIEW OF CHEMICAL AND BIOMOLECULAR ENGINEERING | 900 | 0% | 1% | 1 |
9 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 643 | 3% | 0% | 7 |
10 | IEEE PHOTONICS TECHNOLOGY LETTERS | 383 | 3% | 0% | 7 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAASSB | 1088751 | 11% | 31% | 27 | Search GAASSB | Search GAASSB |
2 | INGAAS GAASSB | 668249 | 3% | 86% | 6 | Search INGAAS+GAASSB | Search INGAAS+GAASSB |
3 | BILAYER QUANTUM WELL | 389813 | 1% | 100% | 3 | Search BILAYER+QUANTUM+WELL | Search BILAYER+QUANTUM+WELL |
4 | GAASSB GAAS | 389813 | 1% | 100% | 3 | Search GAASSB+GAAS | Search GAASSB+GAAS |
5 | NON MARKOVIAN GAIN MODEL | 292358 | 1% | 75% | 3 | Search NON+MARKOVIAN+GAIN+MODEL | Search NON+MARKOVIAN+GAIN+MODEL |
6 | GAASSB GAAS LASER | 259875 | 1% | 100% | 2 | Search GAASSB+GAAS+LASER | Search GAASSB+GAAS+LASER |
7 | TYPE II QUANTUM WELL | 173241 | 3% | 22% | 6 | Search TYPE+II+QUANTUM+WELL | Search TYPE+II+QUANTUM+WELL |
8 | TYPE II | 160447 | 7% | 7% | 17 | Search TYPE+II | Search TYPE+II |
9 | BLOCK DIAGONALIZED HAMILTONIAN | 129938 | 0% | 100% | 1 | Search BLOCK+DIAGONALIZED+HAMILTONIAN | Search BLOCK+DIAGONALIZED+HAMILTONIAN |
10 | CAASSB GAAS LASER | 129938 | 0% | 100% | 1 | Search CAASSB+GAAS+LASER | Search CAASSB+GAAS+LASER |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MOROZOV, SV , KRYZHKOV, DI , YABLONSKY, AN , ALESHKIN, VY , KRASILNIK, ZF , ZVONKOV, BN , VIKHROVA, OV , (2014) DEPENDENCE OF THE GROUND-STATE TRANSITION ENERGY VERSUS OPTICAL PUMPING IN GAASSB/INGAAS/GAAS HETEROSTRUCTURES.APPLIED PHYSICS LETTERS. VOL. 104. ISSUE 2. P. - | 14 | 82% | 1 |
2 | KRYZHKOV, DI , YABLONSKY, AN , MOROZOV, SV , ALESHKIN, VY , ZVONKOV, BN , VIKHROVA, OV , KRASILNIK, ZF , (2014) LONG-WAVELENGTH SHIFT AND ENHANCED ROOM TEMPERATURE PHOTOLUMINESCENCE EFFICIENCY IN GAASSB/INGAAS/GAAS-BASED HETEROSTRUCTURES EMITTING IN THE SPECTRAL RANGE OF 1.0-1.2 MU M DUE TO INCREASED CHARGE CARRIER'S LOCALIZATION.JOURNAL OF APPLIED PHYSICS. VOL. 116. ISSUE 20. P. - | 14 | 82% | 0 |
3 | YU, SQ , DING, D , WANG, JB , SAMAL, N , JIN, X , CAO, Y , JOHNSON, SR , ZHANG, YH , (2007) HIGH PERFORMANCE GAASSB/GAAS QUANTUM WELL LASERS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 25. ISSUE 5. P. 1658-1663 | 16 | 84% | 5 |
4 | SADOFYEV, YG , SAMAL, N , ANDREEV, BA , GAVRILENKO, VI , MOROZOV, SV , SPIVAKOV, AG , YABLONSKY, AN , (2010) GAASSB/GAAS STRAINED STRUCTURES WITH QUANTUM WELLS FOR LASERS WITH EMISSION WAVELENGTH NEAR 1.3 MU M.SEMICONDUCTORS. VOL. 44. ISSUE 3. P. 405-412 | 13 | 87% | 6 |
5 | MOROZOV, SV , KRYZHKOV, DI , YABLONSKY, AN , ANTONOV, AV , KURITSIN, DI , GAPONOVA, DM , SADOFYEV, YG , SAMAL, N , GAVRILENKO, VI , KRASILNIK, ZF , (2013) TYPE II-TYPE I CONVERSION OF GAAS/GAASSB HETEROSTRUCTURE ENERGY SPECTRUM UNDER OPTICAL PUMPING.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 16. P. - | 12 | 86% | 3 |
6 | MOROZOV, SV , KRYZHKOV, DI , GAVRILENKO, VI , YABLONSKY, AN , KURITSYN, DI , GAPONOVA, DM , SADOFYEV, YG , ZVONKOV, BN , VIHROVA, OV , (2012) DETERMINATION OF THE HETEROJUNCTION TYPE IN STRUCTURES WITH GAASSB/GAAS QUANTUM WELLS WITH VARIOUS ANTIMONY FRACTIONS BY OPTICAL METHODS.SEMICONDUCTORS. VOL. 46. ISSUE 11. P. 1376 -1380 | 12 | 86% | 0 |
7 | HUANG, CT , WU, JD , LIU, CF , HUANG, YS , WAN, CT , SU, YK , TIONG, KK , (2013) OPTICAL CHARACTERIZATION OF A GAASSB/GAAS/GAASP STRAIN-COMPENSATED QUANTUM WELL STRUCTURE GROWN BY METAL-ORGANIC VAPOR PHASE EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 370. ISSUE . P. 182-185 | 14 | 70% | 1 |
8 | SADOFYEV, YG , SAMAL, N , (2010) PHOTOLUMINESCENCE AND BAND ALIGNMENT OF STRAINED GAASSB/GAAS QW STRUCTURES GROWN BY MBE ON GAAS.MATERIALS. VOL. 3. ISSUE 3. P. 1497-1508 | 12 | 86% | 8 |
9 | BARANOWSKI, M , SYPEREK, M , KUDRAWIEC, R , MISIEWICZ, J , GUPTA, JA , WU, X , WANG, R , (2012) CARRIER DYNAMICS IN TYPE-II GAASSB/GAAS QUANTUM WELLS.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 24. ISSUE 18. P. - | 16 | 62% | 3 |
10 | SADOFYEV, YG , SAMAL, N , (2010) STRAINED GAASSB/GAAS QW STRUCTURES GROWN BY MBE ON GAAS (100) FOR APPLICATIONS NEAR 1.3 MICRON.JOURNAL OF CRYSTAL GROWTH. VOL. 312. ISSUE 2. P. 305-309 | 12 | 86% | 2 |
Classes with closest relation at Level 1 |