Class information for:
Level 1: CAPACITANCE VOLTAGE C V PROFILING//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
20163 473 14.9 57%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
247 2             GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES 19852
20163 1                   CAPACITANCE VOLTAGE C V PROFILING//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING 473

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CAPACITANCE VOLTAGE C V PROFILING authKW 129112 0% 100% 2
2 ELECTRICITY PROPERTIES authKW 129112 0% 100% 2
3 ELECTROCHEMICAL C V PROFILING authKW 129112 0% 100% 2
4 IRON IN GAAS authKW 129112 0% 100% 2
5 ALAS GAAS VALENCE BAND OFFSET authKW 64556 0% 100% 1
6 AUTOMATED EXPERIMENTAL EQUIPMENT authKW 64556 0% 100% 1
7 BARE SI SYSTEM authKW 64556 0% 100% 1
8 C V BANDGAP authKW 64556 0% 100% 1
9 C V CHARGE PROFILING METHOD authKW 64556 0% 100% 1
10 C V INTERCEPT authKW 64556 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 3893 58% 0% 273
2 Physics, Condensed Matter 1855 34% 0% 159
3 Engineering, Electrical & Electronic 1160 30% 0% 143
4 Materials Science, Coatings & Films 196 5% 0% 24
5 Materials Science, Multidisciplinary 194 17% 0% 81
6 Nanoscience & Nanotechnology 94 6% 0% 27
7 Physics, Multidisciplinary 43 6% 0% 29
8 Metallurgy & Metallurgical Engineering 20 3% 0% 15
9 Instruments & Instrumentation 17 3% 0% 13
10 Electrochemistry 14 2% 0% 10

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CHINA PREDICT TECHNOL 64556 0% 100% 1
2 DIGITALDNA CHINA 64556 0% 100% 1
3 ELECT COMP ENGN BONNER HALL 64556 0% 100% 1
4 FIS GLEB WATAGHING 64556 0% 100% 1
5 INTEGRATED LANDSC E ANAL MODELLING GRP 64556 0% 100% 1
6 INTEGRATED OPTOELECT SEMICOND REG 64556 0% 100% 1
7 SCI MATERIAUX ELECT 64556 0% 100% 1
8 NIZHNI NOVGOROD PHYS TECH 32277 0% 50% 1
9 SOLID STATE ELE DIRECTORATE 32277 0% 50% 1
10 PHYS NOWON KU 21517 0% 33% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICONDUCTORS 5962 5% 0% 25
2 SOLID-STATE ELECTRONICS 5482 6% 0% 29
3 JOURNAL OF APPLIED PHYSICS 2597 14% 0% 66
4 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2320 4% 0% 17
5 APPLIED PHYSICS LETTERS 2058 13% 0% 60
6 IEEE TRANSACTIONS ON ELECTRON DEVICES 1846 4% 0% 21
7 INSTITUTE OF PHYSICS CONFERENCE SERIES 1277 3% 0% 14
8 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1231 4% 0% 18
9 IEEE ELECTRON DEVICE LETTERS 1014 3% 0% 12
10 RARE METAL MATERIALS AND ENGINEERING 867 3% 0% 13

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 CAPACITANCE VOLTAGE C V PROFILING 129112 0% 100% 2 Search CAPACITANCE+VOLTAGE+C+V+PROFILING Search CAPACITANCE+VOLTAGE+C+V+PROFILING
2 ELECTRICITY PROPERTIES 129112 0% 100% 2 Search ELECTRICITY+PROPERTIES Search ELECTRICITY+PROPERTIES
3 ELECTROCHEMICAL C V PROFILING 129112 0% 100% 2 Search ELECTROCHEMICAL+C+V+PROFILING Search ELECTROCHEMICAL+C+V+PROFILING
4 IRON IN GAAS 129112 0% 100% 2 Search IRON+IN+GAAS Search IRON+IN+GAAS
5 ALAS GAAS VALENCE BAND OFFSET 64556 0% 100% 1 Search ALAS+GAAS+VALENCE+BAND+OFFSET Search ALAS+GAAS+VALENCE+BAND+OFFSET
6 AUTOMATED EXPERIMENTAL EQUIPMENT 64556 0% 100% 1 Search AUTOMATED+EXPERIMENTAL+EQUIPMENT Search AUTOMATED+EXPERIMENTAL+EQUIPMENT
7 BARE SI SYSTEM 64556 0% 100% 1 Search BARE+SI+SYSTEM Search BARE+SI+SYSTEM
8 C V BANDGAP 64556 0% 100% 1 Search C+V+BANDGAP Search C+V+BANDGAP
9 C V CHARGE PROFILING METHOD 64556 0% 100% 1 Search C+V+CHARGE+PROFILING+METHOD Search C+V+CHARGE+PROFILING+METHOD
10 C V INTERCEPT 64556 0% 100% 1 Search C+V+INTERCEPT Search C+V+INTERCEPT

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 COOPER, JA , (1998) NONVOLATILE RANDOM ACCESS MEMORIES IN WIDE BANDGAP SEMICONDUCTORS.GALLIUM NITRIDE (GAN) I. VOL. 50. ISSUE . P. 473-491 13 87% 0
2 LING, ZG , COOPER, JA , MELLOCH, MR , (1992) A VERTICALLY INTEGRATED GAAS BIPOLAR FET DRAM CELL WITH INTERNAL GAIN.IEEE ELECTRON DEVICE LETTERS. VOL. 13. ISSUE 12. P. 633-635 15 94% 0
3 BARANOVSKIY, MV , GLINSKII, GF , MIRONOVA, MS , (2013) PHOTOELECTRIC DIAGNOSTICS METHOD FOR INGAN/GAN MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES.SEMICONDUCTORS. VOL. 47. ISSUE 1. P. 58-62 8 89% 1
4 MOON, CR , CHOE, BD , KWON, SD , SHIN, HK , LIM, H , (1998) ELECTRON DISTRIBUTION AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-DOPED QUANTUM WELLS.JOURNAL OF APPLIED PHYSICS. VOL. 84. ISSUE 5. P. 2673 -2683 15 65% 26
5 BASARAN, E , (2001) CHOICE OF ELECTROLYTE FOR DOPING PROFILING IN SI BY ELECTROCHEMICAL C-V TECHNIQUE.APPLIED SURFACE SCIENCE. VOL. 172. ISSUE 3-4. P. 345-350 10 91% 1
6 KWON, SD , LIM, H , SHIN, HK , CHOE, BD , (1996) INFLUENCE OF CARRIER FLOW ON THE TEMPERATURE-DEPENDENT CAPACITANCE-VOLTAGE PROFILES OF HETEROJUNCTION STRUCTURES.APPLIED PHYSICS LETTERS. VOL. 69. ISSUE 18. P. 2740-2742 11 92% 8
7 GUILLOT, C , ACHARD, J , BARBARIN, F , DUGAY, M , (1999) CAPACITANCE-VOLTAGE PROFILING AND THERMAL EVOLUTION OF THE CONDUCTION BAND-OFFSET OF UNSTRAINED GA0.47IN0.53AS/INP SINGLE QUANTUM WELL.JOURNAL OF ELECTRONIC MATERIALS. VOL. 28. ISSUE 8. P. 975-979 12 75% 1
8 PANDA, S , BISWAS, D , (2011) INCONSISTENT TEMPERATURE DEPENDENCE IN CAPACITANCE-VOLTAGE PROFILING OF QUANTUM WELLS.JOURNAL OF APPLIED PHYSICS. VOL. 109. ISSUE 5. P. - 9 69% 1
9 BROUNKOV, PN , BENYATTOU, T , GUILLOT, G , CLARK, SA , (1995) ADMITTANCE SPECTROSCOPY OF INALAS/INGAAS SINGLE-QUANTUM-WELL STRUCTURE WITH HIGH-CONCENTRATION OF ELECTRON TRAPS IN INALAS LAYERS.JOURNAL OF APPLIED PHYSICS. VOL. 77. ISSUE 1. P. 240-243 12 80% 8
10 LU, F , ZHANG, SK , JIANG, ZM , QIN, J , HU, DZ , WANG, X , (1999) CONDUCTANCE-VOLTAGE CHARACTERISTICS OF SIGE/SI QUANTUM-WELL STRUCTURES.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 34. ISSUE . P. S73-S76 10 83% 1

Classes with closest relation at Level 1


Rank Class id link
1 17212 INALAS INP//CONDUCTION SUBBAND//INALAS ALASSB
2 32868 DIELECTRIC COMPUTATION//HEINRICH PLETT STR 40//ITUTE OF NANOSTRUCTURE TECHNOL AND ANALYT INA
3 11353 DELTA DOPING//MULTISUBBAND ELECTRON MOBILITY//DELTA DOPED QUANTUM WELLS
4 7474 DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS
5 16019 INASP INP//INASP//FDN CPQD
6 3053 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//PSEUDOMORPHIC MODFET
7 8836 QUANTUM DOT INFRARED PHOTODETECTOR//INFRARED PHOTODETECTOR//QUANTUM DOT INFRARED PHOTODETECTOR QDIP
8 13201 IN DESORPTION//ISOVALENT DELTA LAYERS//ULTRATHIN INAS LAYERS
9 26030 PARABOLIC QUANTUM WELL//ELE OMAGNET FIELD THEORY MICROWAVE ELECT//PARABOLIC WELL
10 17770 VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS

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