Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
18090 | 567 | 20.1 | 83% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
247 | 2 | GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES | 19852 |
18090 | 1 | GASB QUANTUM DOTS//GASB GAAS//GASB | 567 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GASB QUANTUM DOTS | authKW | 323118 | 1% | 100% | 6 |
2 | GASB GAAS | authKW | 276957 | 1% | 86% | 6 |
3 | GASB | authKW | 263310 | 7% | 13% | 39 |
4 | ANTIMONIDES | authKW | 124648 | 5% | 7% | 31 |
5 | ELECT ENGN WESTERN NANOELECT | address | 107706 | 0% | 100% | 2 |
6 | GAP SUBSTRATES | authKW | 107706 | 0% | 100% | 2 |
7 | GASB QUANTUM RINGS | authKW | 107706 | 0% | 100% | 2 |
8 | NANOSTRUCTURING OF SILICON | authKW | 107706 | 0% | 100% | 2 |
9 | PHYS RENNES UMR CNRS 6251 UR1 | address | 107706 | 0% | 100% | 2 |
10 | SCANNING TRANSMISS ELE ON MICROSCOPY GRP | address | 107706 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 6479 | 67% | 0% | 382 |
2 | Physics, Condensed Matter | 1397 | 27% | 0% | 154 |
3 | Crystallography | 1030 | 12% | 0% | 68 |
4 | Nanoscience & Nanotechnology | 689 | 13% | 0% | 71 |
5 | Materials Science, Multidisciplinary | 687 | 26% | 0% | 150 |
6 | Materials Science, Coatings & Films | 204 | 5% | 0% | 27 |
7 | Engineering, Electrical & Electronic | 45 | 8% | 0% | 45 |
8 | Optics | 35 | 5% | 0% | 27 |
9 | Physics, Multidisciplinary | 33 | 5% | 0% | 30 |
10 | Microscopy | 17 | 1% | 0% | 4 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECT ENGN WESTERN NANOELECT | 107706 | 0% | 100% | 2 |
2 | PHYS RENNES UMR CNRS 6251 UR1 | 107706 | 0% | 100% | 2 |
3 | SCANNING TRANSMISS ELE ON MICROSCOPY GRP | 107706 | 0% | 100% | 2 |
4 | ELECT ENGN CALIF NANOSYST | 71803 | 0% | 67% | 2 |
5 | AG KRISTALLOG | 64103 | 1% | 24% | 5 |
6 | A V RZHANOV SEMICOND PHYS | 53853 | 0% | 100% | 1 |
7 | CAMPINAS SAO PAULO | 53853 | 0% | 100% | 1 |
8 | CEM2 IES | 53853 | 0% | 100% | 1 |
9 | CIENCIA MAT E IM QI | 53853 | 0% | 100% | 1 |
10 | CNRS 6082 | 53853 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 8138 | 23% | 0% | 129 |
2 | JOURNAL OF CRYSTAL GROWTH | 7742 | 12% | 0% | 67 |
3 | SEMICONDUCTORS | 3840 | 4% | 0% | 22 |
4 | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 3144 | 4% | 0% | 22 |
5 | JOURNAL OF APPLIED PHYSICS | 1062 | 8% | 0% | 47 |
6 | NANOTECHNOLOGY | 891 | 2% | 0% | 14 |
7 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 443 | 2% | 0% | 13 |
8 | APPLIED SURFACE SCIENCE | 417 | 3% | 0% | 17 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS | 393 | 2% | 0% | 11 |
10 | PHYSICAL REVIEW B | 246 | 5% | 0% | 30 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GASB QUANTUM DOTS | 323118 | 1% | 100% | 6 | Search GASB+QUANTUM+DOTS | Search GASB+QUANTUM+DOTS |
2 | GASB GAAS | 276957 | 1% | 86% | 6 | Search GASB+GAAS | Search GASB+GAAS |
3 | GASB | 263310 | 7% | 13% | 39 | Search GASB | Search GASB |
4 | ANTIMONIDES | 124648 | 5% | 7% | 31 | Search ANTIMONIDES | Search ANTIMONIDES |
5 | GAP SUBSTRATES | 107706 | 0% | 100% | 2 | Search GAP+SUBSTRATES | Search GAP+SUBSTRATES |
6 | GASB QUANTUM RINGS | 107706 | 0% | 100% | 2 | Search GASB+QUANTUM+RINGS | Search GASB+QUANTUM+RINGS |
7 | NANOSTRUCTURING OF SILICON | 107706 | 0% | 100% | 2 | Search NANOSTRUCTURING+OF+SILICON | Search NANOSTRUCTURING+OF+SILICON |
8 | MOLECULAR BEAM EPITAXY | 58890 | 13% | 1% | 75 | Search MOLECULAR+BEAM+EPITAXY | Search MOLECULAR+BEAM+EPITAXY |
9 | 90 DEGREES MISFIT ARRAYS | 53853 | 0% | 100% | 1 | Search 90+DEGREES+MISFIT+ARRAYS | Search 90+DEGREES+MISFIT+ARRAYS |
10 | BARRIER CONFINEMENT | 53853 | 0% | 100% | 1 | Search BARRIER+CONFINEMENT | Search BARRIER+CONFINEMENT |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | RICHTER, J , STRASSNER, J , LOEBER, TH , FOUCKHARDT, H , NOWOZIN, T , BONATO, L , BIMBERG, D , BRAAM, D , LORKE, A , (2014) GASB QUANTUM DOTS ON GAAS WITH HIGH LOCALIZATION ENERGY OF 710 MEV AND AN EMISSION WAVELENGTH OF 1.3 MU M.JOURNAL OF CRYSTAL GROWTH. VOL. 404. ISSUE . P. 48 -53 | 23 | 88% | 1 |
2 | DEJARLD, M , YAN, LF , LUENGO-KOVAC, M , SIH, V , MILLUNCHICK, J , (2017) STRUCTURAL DIFFERENCES BETWEEN CAPPED GASB NANOSTRUCTURES GROWN BY STRANSKI-KRASTANOV AND DROPLET EPITAXY GROWTH MODES.JOURNAL OF APPLIED PHYSICS. VOL. 121. ISSUE 3. P. - | 26 | 70% | 0 |
3 | QIU, F , QIU, WY , LI, YL , WANG, XJ , ZHANG, Y , ZHOU, XH , LV, YF , SUN, Y , DENG, HY , HU, SH , ET AL (2016) AN INVESTIGATION OF EXCITON BEHAVIOR IN TYPE-II SELF-ASSEMBLED GASB/GAAS QUANTUM DOTS.NANOTECHNOLOGY. VOL. 27. ISSUE 6. P. - | 18 | 90% | 1 |
4 | HODGSON, PD , HAYNE, M , ROBSON, AJ , ZHUANG, QD , DANOS, L , (2016) GASB QUANTUM RINGS IN GAAS/ALXGA1-XAS QUANTUM WELLS.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 4. P. - | 22 | 79% | 0 |
5 | DADGOSTAR, S , SCHMIDTBAUER, J , BOECK, T , TORRES, A , MARTINEZ, O , JIMENEZ, J , TOMM, JW , MOGILATENKO, A , MASSELINK, WT , HATAMI, F , (2016) GAAS/GAP QUANTUM DOTS: ENSEMBLE OF DIRECT AND INDIRECT HETEROSTRUCTURES WITH ROOM TEMPERATURE OPTICAL EMISSION.APPLIED PHYSICS LETTERS. VOL. 108. ISSUE 10. P. - | 20 | 74% | 0 |
6 | KAWAZU, T , NODA, T , SAKUMA, Y , SAKAKI, H , (2016) EXCITATION POWER DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA OF GASB TYPE-II QUANTUM DOTS IN GAAS GROWN BY DROPLET EPITAXY.AIP ADVANCES. VOL. 6. ISSUE 4. P. - | 21 | 60% | 1 |
7 | MAHAJUMI, AS , CARRINGTON, P , KOSTAKIS, I , MISSOUS, M , SANCHEZ, A , ZHUANG, QD , YOUNG, R , HAYNE, M , KRIER, A , (2013) RAPID THERMAL ANNEALING AND PHOTOLUMINESCENCE OF TYPE-II GASB SINGLE MONOLAYER QUANTUM DOT STACKS.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 46. ISSUE 30. P. - | 18 | 75% | 3 |
8 | KAWAZU, T , MANO, T , NODA, T , SAKAKI, H , (2010) THERMAL ANNEALING OF GASB QUANTUM DOTS IN GAAS FORMED BY DROPLET EPITAXY.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. VOL. 42. ISSUE 10. P. 2742-2744 | 16 | 89% | 2 |
9 | KAWAZU, T , NODA, T , MANO, T , SAKUMA, Y , SAKAKI, H , (2015) GROWTH AND OPTICAL PROPERTIES OF GASB/GAAS TYPE-II QUANTUM DOTS WITH AND WITHOUT WETTING LAYER.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 4. P. - | 19 | 63% | 2 |
10 | CUI, K , MA, WQ , HUANG, JL , WEI, Y , ZHANG, YH , CAO, YL , GU, YX , YANG, T , (2012) MULTILAYERED TYPE-II GASB/GAAS SELF-ASSEMBLED QUANTUM DOT STRUCTURE WITH 1.35 MU M LIGHT EMISSION AT ROOM TEMPERATURE.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. VOL. 45. ISSUE . P. 173-176 | 16 | 80% | 5 |
Classes with closest relation at Level 1 |