Class information for:
Level 2: PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
1077 9920 19.4 60%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
19 4 ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON 523489
158 3       NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION 61209
1077 2             PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9920
1352 1                   ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 2703
5594 1                   SOLID STATE TECHNOLOGY//AFTER CORROSION//AL SI CU ETCHING 1599
5846 1                   FUJIMI KU//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//DRY ETCHING 1568
12204 1                   RUN TO RUN CONTROL//VIRTUAL METROLOGY//IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 924
12287 1                   ECR PLASMA//UNIFORM PLASMA//ELECTRON CYCLOTRON RESONANCE DISCHARGE 917
17198 1                   GATE CHARGING//PLASMA CHARGING DAMAGE//CHARGING DAMAGE 611
19470 1                   PLANE PLASMA DISCHARGE//ENERGY INFLUX//DRY DEVELOPMENT 504
21652 1                   ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING 411
24369 1                   NITROGEN TRIFLUORIDE//DIFLUOROALKYLAMINES//CHEMICAL DRY ETCHING 314
26085 1                   INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//MAGNETIC TUNNEL JUNCTION MATERIALS 263
34813 1                   ELECTROSTATIC CHUCK//PIN CHUCK//WAFER FLATNESS 106

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 PLASMA ETCHING authKW 251200 2% 34% 237
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A journal 224033 10% 7% 1016
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B journal 199138 10% 6% 1039
4 ELECT DEVICES MAT TECHNOL address 149493 1% 90% 54
5 RUN TO RUN CONTROL authKW 133961 1% 78% 56
6 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING journal 115881 2% 16% 243
7 PHYSICS, APPLIED WoSSC 114959 68% 1% 6728
8 DRY ETCHING authKW 111818 1% 28% 128
9 ECR PLASMA authKW 104736 1% 40% 85
10 REACTIVE ION ETCHING authKW 92180 1% 23% 133

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 114959 68% 1% 6728
2 Materials Science, Coatings & Films 79544 21% 1% 2045
3 Nanoscience & Nanotechnology 20124 16% 0% 1574
4 Engineering, Electrical & Electronic 18393 27% 0% 2647
5 Physics, Condensed Matter 5119 14% 0% 1366
6 Instruments & Instrumentation 4211 7% 0% 718
7 Engineering, Manufacturing 3233 3% 0% 336
8 Electrochemistry 3188 5% 0% 535
9 Physics, Fluids & Plasmas 2292 4% 0% 421
10 Materials Science, Multidisciplinary 1522 12% 0% 1197

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT DEVICES MAT TECHNOL 149493 1% 90% 54
2 TECHNOL MICROELECT 36917 0% 26% 46
3 FUJIMI KU 24610 0% 100% 8
4 MICROELECT DEVICES MAT TECHNOL 22592 0% 57% 13
5 LSI BASIC 19162 0% 69% 9
6 KASADO WORKS 16401 0% 67% 8
7 MAT MACHINERY GRP 15381 0% 100% 5
8 CONTROL RUMENTAT ENGN 15368 1% 9% 57
9 FLUID SCI 13049 1% 5% 86
10 PLASMA SUR E INTERACT 12555 0% 58% 7

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 224033 10% 7% 1016
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 199138 10% 6% 1039
3 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 115881 2% 16% 243
4 SOLID STATE TECHNOLOGY 67490 2% 11% 202
5 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 34311 6% 2% 593
6 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 27141 5% 2% 521
7 VACUUM 19076 2% 3% 245
8 MICROELECTRONIC ENGINEERING 17975 2% 2% 246
9 PLASMA SOURCES SCIENCE & TECHNOLOGY 16770 1% 4% 123
10 PLASMA CHEMISTRY AND PLASMA PROCESSING 11334 1% 5% 73

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 PLASMA ETCHING 251200 2% 34% 237 Search PLASMA+ETCHING Search PLASMA+ETCHING
2 RUN TO RUN CONTROL 133961 1% 78% 56 Search RUN+TO+RUN+CONTROL Search RUN+TO+RUN+CONTROL
3 DRY ETCHING 111818 1% 28% 128 Search DRY+ETCHING Search DRY+ETCHING
4 ECR PLASMA 104736 1% 40% 85 Search ECR+PLASMA Search ECR+PLASMA
5 REACTIVE ION ETCHING 92180 1% 23% 133 Search REACTIVE+ION+ETCHING Search REACTIVE+ION+ETCHING
6 VIRTUAL METROLOGY 88149 0% 87% 33 Search VIRTUAL+METROLOGY Search VIRTUAL+METROLOGY
7 ETCHING 87408 3% 10% 281 Search ETCHING Search ETCHING
8 SIO2 ETCHING 67169 0% 70% 31 Search SIO2+ETCHING Search SIO2+ETCHING
9 ETCH RATE 66407 1% 41% 53 Search ETCH+RATE Search ETCH+RATE
10 ELECTRON CYCLOTRON RESONANCE 54964 1% 31% 58 Search ELECTRON+CYCLOTRON+RESONANCE Search ELECTRON+CYCLOTRON+RESONANCE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 DONNELLY, VM , KORNBLIT, A , (2013) PLASMA ETCHING: YESTERDAY, TODAY, AND TOMORROW.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 31. ISSUE 5. P. - 172 66% 97
2 JANSEN, HV , DE BOER, MJ , UNNIKRISHNAN, S , LOUWERSE, MC , ELWENSPOEK, MC , (2009) BLACK SILICON METHOD X: A REVIEW ON HIGH SPEED AND SELECTIVE PLASMA ETCHING OF SILICON WITH PROFILE CONTROL: AN IN-DEPTH COMPARISON BETWEEN BOSCH AND CRYOSTAT DRIE PROCESSES AS A ROADMAP TO NEXT GENERATION EQUIPMENT.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 19. ISSUE 3. P. - 183 78% 103
3 WINTERS, HF , COBURN, JW , (1992) SURFACE SCIENCE ASPECTS OF ETCHING REACTIONS.SURFACE SCIENCE REPORTS. VOL. 14. ISSUE 4-6. P. 161-269 136 83% 336
4 KANARIK, KJ , LILL, T , HUDSON, EA , SRIRAMAN, S , TAN, S , MARKS, J , VAHEDI, V , GOTTSCHO, RA , (2015) OVERVIEW OF ATOMIC LAYER ETCHING IN THE SEMICONDUCTOR INDUSTRY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 33. ISSUE 2. P. - 70 78% 27
5 BANNA, S , AGARWAL, A , CUNGE, G , DARNON, M , PARGON, E , JOUBERT, O , (2012) PULSED HIGH-DENSITY PLASMAS FOR ADVANCED DRY ETCHING PROCESSES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 30. ISSUE 4. P. - 84 80% 51
6 NAKAZAKI, N , TAKAO, Y , ERIGUCHI, K , ONO, K , (2015) MOLECULAR DYNAMICS SIMULATIONS OF SI ETCHING IN CL- AND BR-BASED PLASMAS: CL+ AND BR+ ION INCIDENCE IN THE PRESENCE OF CL AND BR NEUTRALS.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 23. P. - 72 90% 4
7 OEHRLEIN, GS , METZLER, D , LI, C , (2015) ATOMIC LAYER ETCHING AT THE TIPPING POINT: AN OVERVIEW.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 4. ISSUE 6. P. N5041 -N5053 73 67% 15
8 MOUREY, O , PETIT-ETIENNE, C , CUNGE, G , DARNON, M , DESPIAU-PUJO, E , BRICHON, P , LATTU-ROMAIN, E , PONS, M , JOUBERT, O , (2016) ROUGHNESS GENERATION DURING SI ETCHING IN CL-2 PULSED PLASMA.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 34. ISSUE 4. P. - 61 88% 1
9 KUBOI, N , FUKASAWA, M , TATSUMI, T , (2016) ADVANCED SIMULATION TECHNOLOGY FOR ETCHING PROCESS DESIGN FOR CMOS DEVICE APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 7. P. - 82 69% 0
10 ABE, H , YONEDA, M , FUJLWARA, N , (2008) DEVELOPMENTS OF PLASMA ETCHING TECHNOLOGY FOR FABRICATING SEMICONDUCTOR DEVICES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 47. ISSUE 3. P. 1435 -1455 66 77% 116

Classes with closest relation at Level 2


Rank Class id link
1 1313 PLASMA SOURCES SCIENCE & TECHNOLOGY//HALL THRUSTER//PHYSICS OF PLASMAS
2 1545 PLASMA POLYMERIZATION//LOW K//PLASMA PROCESSES AND POLYMERS
3 3149 CLEANROOM//PHOTORESIST REMOVAL//MINIENVIRONMENT
4 720 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//CHEMICALLY AMPLIFIED RESIST//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
5 3920 STRESS STRAINED STATE//STRESS STRUCTURAL INHOMOGENEITY//HIGH DENSITY CERAMIC
6 3506 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY
7 3025 NEUTRAL BEAM INJECTION//NEGATIVE ION SOURCE//NEUTRAL BEAM INJECTOR
8 2642 THROUGH SILICON VIA TSV//WAFER BONDING//THROUGH SILICON VIA
9 474 FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI
10 478 DIELECTRIC BARRIER DISCHARGE//NON THERMAL PLASMA//ATMOSPHERIC PRESSURE PLASMA

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