Class information for:
Level 1: FUJIMI KU//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//DRY ETCHING

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
5846 1568 17.3 72%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
19 4 ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON 523489
158 3       NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION 61209
1077 2             PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9920
5846 1                   FUJIMI KU//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//DRY ETCHING 1568

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FUJIMI KU address 155779 1% 100% 8
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B journal 130094 21% 2% 333
3 DRY ETCHING authKW 116915 3% 12% 52
4 REACTIVE ION BEAM ETCHING authKW 94007 1% 37% 13
5 ECR RIBE authKW 69541 0% 71% 5
6 GAAS OXIDE authKW 62310 0% 80% 4
7 IN SITU EB LITHOGRAPHY authKW 58417 0% 100% 3
8 INSITU PROCESS authKW 58417 0% 100% 3
9 NANO TECHNOL PLICAT address 43811 0% 75% 3
10 SOLID SOURCE authKW 43811 0% 75% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 20306 71% 0% 1121
2 Nanoscience & Nanotechnology 8102 25% 0% 387
3 Engineering, Electrical & Electronic 7392 41% 0% 639
4 Materials Science, Coatings & Films 4473 13% 0% 196
5 Physics, Condensed Matter 1044 15% 0% 240
6 Electrochemistry 336 5% 0% 71
7 Optics 246 7% 0% 104
8 Materials Science, Multidisciplinary 214 12% 0% 182
9 Physics, Fluids & Plasmas 31 2% 0% 26
10 Chemistry, Physical 26 6% 0% 98

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FUJIMI KU 155779 1% 100% 8
2 NANO TECHNOL PLICAT 43811 0% 75% 3
3 NANO ENG 25962 0% 67% 2
4 SEMICOND MEMS PROC 23842 0% 18% 7
5 FESTKORPERPHYS LOTHARSTR 19472 0% 100% 1
6 IONENSTRAHLTECH 19472 0% 100% 1
7 LPN PHOTON NANOSTRUCT ROUTE NOZAY 19472 0% 100% 1
8 MAT SCI TECHNOL REC 19472 0% 100% 1
9 MINNESOTA SUPERCOMP CHEM ENGN MAT SCI 19472 0% 100% 1
10 NANA TECHNOL PLICAT 19472 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 130094 21% 2% 333
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 8274 5% 1% 78
3 APPLIED PHYSICS LETTERS 5242 11% 0% 175
4 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 3928 5% 0% 80
5 MICROELECTRONIC ENGINEERING 3163 3% 0% 41
6 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 3113 2% 0% 36
7 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 3079 4% 0% 70
8 PLASMA CHEMISTRY AND PLASMA PROCESSING 3036 1% 1% 15
9 SOLID-STATE ELECTRONICS 2794 2% 0% 38
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 2664 3% 0% 41

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 DRY ETCHING 116915 3% 12% 52 Search DRY+ETCHING Search DRY+ETCHING
2 REACTIVE ION BEAM ETCHING 94007 1% 37% 13 Search REACTIVE+ION+BEAM+ETCHING Search REACTIVE+ION+BEAM+ETCHING
3 ECR RIBE 69541 0% 71% 5 Search ECR+RIBE Search ECR+RIBE
4 GAAS OXIDE 62310 0% 80% 4 Search GAAS+OXIDE Search GAAS+OXIDE
5 IN SITU EB LITHOGRAPHY 58417 0% 100% 3 Search IN+SITU+EB+LITHOGRAPHY Search IN+SITU+EB+LITHOGRAPHY
6 INSITU PROCESS 58417 0% 100% 3 Search INSITU+PROCESS Search INSITU+PROCESS
7 SOLID SOURCE 43811 0% 75% 3 Search SOLID+SOURCE Search SOLID+SOURCE
8 BCL3 N 2 38945 0% 100% 2 Search BCL3+N+2 Search BCL3+N+2
9 CL 2 XE 38945 0% 100% 2 Search CL+2+XE Search CL+2+XE
10 CORRUGATED QUANTUM WELL INFRARED PHOTODETECTOR FOCAL PLANE ARRAYS 38945 0% 100% 2 Search CORRUGATED+QUANTUM+WELL+INFRARED+PHOTODETECTOR+FOCAL+PLANE+ARRAYS Search CORRUGATED+QUANTUM+WELL+INFRARED+PHOTODETECTOR+FOCAL+PLANE+ARRAYS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 SIMPSON, WC , YARMOFF, JA , (1996) FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES.ANNUAL REVIEW OF PHYSICAL CHEMISTRY. VOL. 47. ISSUE . P. 527 -554 91 73% 43
2 PEARTON, SJ , (1994) REACTIVE ION ETCHING OF III-V SEMICONDUCTORS.INTERNATIONAL JOURNAL OF MODERN PHYSICS B. VOL. 8. ISSUE 14. P. 1781 -1786 76 84% 16
3 PEARTON, SJ , (1996) HIGH ION DENSITY DRY ETCHING OF COMPOUND SEMICONDUCTORS.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 40. ISSUE 2-3. P. 101-118 56 77% 16
4 AGARWAL, VR , RAWAL, DS , VYAS, HP , (2005) REVIEW: BACK-SIDE VIA HOLE ETCHING PROCESS FOR GROUNDING GAAS BASED MONOLITHIC MICROWAVE INTEGRATED CIRCUITS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 152. ISSUE 7. P. G567-G576 34 92% 6
5 CHEN, HY , RUDA, HE , (2002) INDUCTIVELY COUPLED PLASMA ETCHING OF INP USING CH4/H-2 AND CH4/H-2/N-2.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 20. ISSUE 1. P. 47-52 35 95% 4
6 LUO, B , REN, F , LEE, KP , PEARTON, SJ , WU, CS , JOHNSON, D , SASSERATH, JN , (2001) COMPARISON OF THE EFFECTS OF H-2 AND D-2 PLASMA EXPOSURE ON GAAS MESFETS.SOLID-STATE ELECTRONICS. VOL. 45. ISSUE 9. P. 1625 -1638 38 86% 1
7 ASAKAWA, K , YOSHIKAWA, T , KOHMOTO, S , NAMBU, Y , SUGIMOTO, Y , (1998) CHLORINE-BASED DRY ETCHING OF III/V COMPOUND SEMICONDUCTORS FOR OPTOELECTRONIC APPLICATION.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 37. ISSUE 2. P. 373 -387 51 68% 20
8 CHEN, HY , RUDA, HE , NAVARRO, AZ , (2001) INDUCTIVELY COUPLED PLASMA ETCHING OF INP USING N-2/H-2.JOURNAL OF APPLIED PHYSICS. VOL. 89. ISSUE 10. P. 5322-5325 33 97% 4
9 PEARTON, SJ , REN, F , (1994) SCIENCE OF DRY-ETCHING OF III-V-MATERIALS.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 5. ISSUE 1. P. 1-12 46 87% 22
10 HAHN, YB , LEE, JW , SHUL, RJ , VAWTER, GA , ABERNATHY, CR , PEARTON, SJ , (2003) REACTIVE ION BEAM ETCHING OF IN-CONTAINING COMPOUND SEMICONDUCTORS IN AN INDUCTIVELY COUPLED CL-2/AR PLASMA.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 42. ISSUE 1. P. 38 -43 31 97% 1

Classes with closest relation at Level 1


Rank Class id link
1 16807 SOCIOTECHNO SCI TECHNOL//SEMICONDUCTOR ELECTROLYTE CONTACTS//MAT STUDY TESTING
2 5594 SOLID STATE TECHNOLOGY//AFTER CORROSION//AL SI CU ETCHING
3 28153 GAINASP INP//CH4 H 2 RIE//MEMBRANE LASER
4 13299 ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS
5 29202 CEA SPE OMETRIE PHYS//ATMEL ROUSSET//CMOS DEV
6 25791 TEXTURED INTERFACE//MICRORELIEF INTERFACE//BEIJING CONDENSD MATTER PHYS
7 23133 SEMICONDUCTOR RING LASER SRL//SEMICONDUCTOR RING LASER//MICRORING LASERS
8 21652 ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING
9 24018 PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//ADSORBATE SUBSTRATE INTERACTIONS
10 26085 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//MAGNETIC TUNNEL JUNCTION MATERIALS

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