Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
26085 | 263 | 18.4 | 66% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
19 | 4 | ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON | 523489 |
158 | 3 | NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION | 61209 |
1077 | 2 | PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 9920 |
26085 | 1 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//MAGNETIC TUNNEL JUNCTION MATERIALS | 263 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING | authKW | 1004732 | 6% | 58% | 15 |
2 | TI HARD MASK | authKW | 464415 | 2% | 100% | 4 |
3 | MAGNETIC TUNNEL JUNCTION MATERIALS | authKW | 348311 | 1% | 100% | 3 |
4 | CL 2 BASED PLASMA | authKW | 261232 | 1% | 75% | 3 |
5 | ETCH PRODUCT | authKW | 261232 | 1% | 75% | 3 |
6 | CH3OH AR | authKW | 232208 | 1% | 100% | 2 |
7 | CH4 O 2 AR GAS | authKW | 232208 | 1% | 100% | 2 |
8 | MAGNETIC TUNNEL JUNCTION STACK | authKW | 232208 | 1% | 100% | 2 |
9 | THIN FILM MICROELECT | address | 168873 | 2% | 36% | 4 |
10 | CH3OH AR GAS | authKW | 154804 | 1% | 67% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 3660 | 27% | 0% | 71 |
2 | Physics, Applied | 3254 | 70% | 0% | 184 |
3 | Nanoscience & Nanotechnology | 657 | 17% | 0% | 46 |
4 | Physics, Condensed Matter | 440 | 23% | 0% | 60 |
5 | Materials Science, Multidisciplinary | 346 | 27% | 0% | 72 |
6 | Engineering, Electrical & Electronic | 328 | 22% | 0% | 59 |
7 | Electrochemistry | 163 | 7% | 0% | 19 |
8 | Optics | 39 | 6% | 0% | 17 |
9 | Chemistry, Physical | 15 | 8% | 0% | 22 |
10 | Engineering, Chemical | 8 | 4% | 0% | 10 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN FILM MICROELECT | 168873 | 2% | 36% | 4 |
2 | DESIGN PLICAT MOL CATALYSIS | 116104 | 0% | 100% | 1 |
3 | FILM NANO MICROELECT | 116104 | 0% | 100% | 1 |
4 | INNOVAT TECHNOL PLANNING | 116104 | 0% | 100% | 1 |
5 | MOSAIC COPPER RD GRP | 116104 | 0% | 100% | 1 |
6 | MOSAIC EPUU CMP INTEGRAT PROGRAM | 116104 | 0% | 100% | 1 |
7 | MRAM SPINTRON RD | 116104 | 0% | 100% | 1 |
8 | NANOMACHINING NANOTRIBOL | 116104 | 0% | 100% | 1 |
9 | SGS THOMSON | 116104 | 0% | 100% | 1 |
10 | TECHNOL DEV MFG | 116104 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 3954 | 8% | 0% | 22 |
2 | MICROELECTRONIC ENGINEERING | 3292 | 6% | 0% | 17 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 3059 | 8% | 0% | 21 |
4 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 1424 | 2% | 0% | 4 |
5 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1376 | 7% | 0% | 19 |
6 | THIN SOLID FILMS | 1017 | 7% | 0% | 18 |
7 | VACUUM | 978 | 3% | 0% | 9 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 879 | 1% | 0% | 3 |
9 | ANNUAL REVIEW OF CHEMICAL AND BIOMOLECULAR ENGINEERING | 804 | 0% | 1% | 1 |
10 | MICRO | 658 | 0% | 1% | 1 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING | 1004732 | 6% | 58% | 15 | Search INDUCTIVELY+COUPLED+PLASMA+REACTIVE+ION+ETCHING | Search INDUCTIVELY+COUPLED+PLASMA+REACTIVE+ION+ETCHING |
2 | TI HARD MASK | 464415 | 2% | 100% | 4 | Search TI+HARD+MASK | Search TI+HARD+MASK |
3 | MAGNETIC TUNNEL JUNCTION MATERIALS | 348311 | 1% | 100% | 3 | Search MAGNETIC+TUNNEL+JUNCTION+MATERIALS | Search MAGNETIC+TUNNEL+JUNCTION+MATERIALS |
4 | CL 2 BASED PLASMA | 261232 | 1% | 75% | 3 | Search CL+2+BASED+PLASMA | Search CL+2+BASED+PLASMA |
5 | ETCH PRODUCT | 261232 | 1% | 75% | 3 | Search ETCH+PRODUCT | Search ETCH+PRODUCT |
6 | CH3OH AR | 232208 | 1% | 100% | 2 | Search CH3OH+AR | Search CH3OH+AR |
7 | CH4 O 2 AR GAS | 232208 | 1% | 100% | 2 | Search CH4+O+2+AR+GAS | Search CH4+O+2+AR+GAS |
8 | MAGNETIC TUNNEL JUNCTION STACK | 232208 | 1% | 100% | 2 | Search MAGNETIC+TUNNEL+JUNCTION+STACK | Search MAGNETIC+TUNNEL+JUNCTION+STACK |
9 | CH3OH AR GAS | 154804 | 1% | 67% | 2 | Search CH3OH+AR+GAS | Search CH3OH+AR+GAS |
10 | DRY ETCHING OF COPPER | 154804 | 1% | 67% | 2 | Search DRY+ETCHING+OF+COPPER | Search DRY+ETCHING+OF+COPPER |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | KIM, T , CHEN, JKC , CHANG, JP , (2014) THERMODYNAMIC ASSESSMENT AND EXPERIMENTAL VERIFICATION OF REACTIVE ION ETCHING OF MAGNETIC METAL ELEMENTS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 32. ISSUE 4. P. - | 27 | 69% | 1 |
2 | WU, FY , LEVITIN, G , HESS, DW , (2010) PATTERNING OF CU FILMS BY A TWO-STEP PLASMA ETCHING PROCESS AT LOW TEMPERATURE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 157. ISSUE 4. P. H474 -H478 | 27 | 75% | 5 |
3 | JEON, MH , KIM, HJ , YANG, KC , KANG, SK , KIM, KN , YEOM, GY , (2013) SELECTIVE ETCHING OF MAGNETIC TUNNEL JUNCTION MATERIALS USING CO/NH3 GAS MIXTURE IN RADIO FREQUENCY PULSE-BIASED INDUCTIVELY COUPLED PLASMAS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 52. ISSUE 5. P. - | 20 | 74% | 6 |
4 | PARK, JY , KANG, SK , JEON, MH , JHON, MS , YEOM, GY , (2011) ETCHING OF COFEB USING COONH3 IN AN INDUCTIVELY COUPLED PLASMA ETCHING SYSTEM.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 158. ISSUE 1. P. H1 -H4 | 12 | 92% | 19 |
5 | GARAY, AA , CHOI, JH , HWANG, SM , CHUNG, CW , (2015) INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING OF MAGNETIC TUNNEL JUNCTION STACKS IN A CH3COOH/AR GAS.ECS SOLID STATE LETTERS. VOL. 4. ISSUE 10. P. P77 -P79 | 10 | 100% | 1 |
6 | KIM, EH , LEE, TY , MIN, BC , CHUNG, CW , (2012) HIGH DENSITY PLASMA REACTIVE ION ETCHING OF COFEB MAGNETIC THIN FILMS USING A CH4/AR PLASMA.THIN SOLID FILMS. VOL. 521. ISSUE . P. 216-221 | 12 | 86% | 3 |
7 | LEE, TY , LEE, IH , CHUNG, CW , (2013) INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING OF MAGNETIC TUNNEL JUNCTION STACKS USING H2O/CH4 MIXTURE.THIN SOLID FILMS. VOL. 547. ISSUE . P. 146-150 | 13 | 76% | 2 |
8 | HAHN, YB , PEARTON, SJ , CHO, H , LEE, KP , (2001) DRY ETCHING MECHANISM OF COPPER AND MAGNETIC MATERIALS WITH UV ILLUMINATION.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 79. ISSUE 1. P. 20-26 | 16 | 84% | 11 |
9 | GARAY, AA , HWANG, SM , CHUNG, CW , (2015) DRY ETCHING OF CO2MNSI MAGNETIC THIN FILMS USING A CH3OH/AR BASED INDUCTIVELY COUPLED PLASMA.VACUUM. VOL. 111. ISSUE . P. 19 -24 | 12 | 75% | 0 |
10 | WU, FY , LEVITIN, G , HESS, DW , (2011) MECHANISTIC CONSIDERATIONS OF LOW TEMPERATURE HYDROGEN-BASED PLASMA ETCHING OF CU.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 29. ISSUE 1. P. - | 19 | 50% | 5 |
Classes with closest relation at Level 1 |