Class information for:
Level 1: NITROGEN TRIFLUORIDE//DIFLUOROALKYLAMINES//CHEMICAL DRY ETCHING

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
24369 314 20.3 54%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
19 4 ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON 523489
158 3       NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION 61209
1077 2             PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9920
24369 1                   NITROGEN TRIFLUORIDE//DIFLUOROALKYLAMINES//CHEMICAL DRY ETCHING 314

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NITROGEN TRIFLUORIDE authKW 583451 6% 33% 18
2 DIFLUOROALKYLAMINES authKW 486229 2% 100% 5
3 CHEMICAL DRY ETCHING authKW 444546 3% 57% 8
4 ATTO address 291738 1% 100% 3
5 DRES authKW 291738 1% 100% 3
6 G2MS THEORY authKW 291738 1% 100% 3
7 MMTCE authKW 291738 1% 100% 3
8 CHLORINE TRIFLUORIDE authKW 250054 2% 43% 6
9 UNITA VITERBO address 233383 2% 40% 6
10 CHAMBER CLEAN authKW 194492 1% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Materials Science, Coatings & Films 4394 27% 0% 85
2 Physics, Applied 1953 51% 0% 159
3 Electrochemistry 530 11% 0% 36
4 Nanoscience & Nanotechnology 242 10% 0% 32
5 Engineering, Electrical & Electronic 209 17% 0% 54
6 Physics, Condensed Matter 188 15% 0% 46
7 Materials Science, Multidisciplinary 75 14% 0% 44
8 Nuclear Science & Technology 59 5% 0% 15
9 Chemistry, Inorganic & Nuclear 41 5% 0% 16
10 Chemistry, Physical 25 9% 0% 29

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ATTO 291738 1% 100% 3
2 UNITA VITERBO 233383 2% 40% 6
3 PLASMA NANOTECHNOL PLANT 175040 1% 60% 3
4 ELECT GASES GRP 129660 1% 67% 2
5 SHIBUKAWA 109398 1% 38% 3
6 3M BELGIUM 97246 0% 100% 1
7 3M GEN OFF 97246 0% 100% 1
8 BIO IT MICRO FAB 97246 0% 100% 1
9 DEPARTIMENTO STUDI CHIM TECNOL SOSTANZE BIOOGIC 97246 0% 100% 1
10 DEV FLORINATED GREENHOUSE GAS ALTERNAT 97246 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOLID STATE TECHNOLOGY 8858 4% 1% 13
2 MICRO 8833 1% 2% 4
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 6167 10% 0% 30
4 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 4178 11% 0% 36
5 JOURNAL OF FLUORINE CHEMISTRY 2021 4% 0% 12
6 MICROSCALE THERMOPHYSICAL ENGINEERING 1931 1% 1% 2
7 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 1864 2% 0% 5
8 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 1546 2% 0% 5
9 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 1113 6% 0% 19
10 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 969 4% 0% 13

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 NITROGEN TRIFLUORIDE 583451 6% 33% 18 Search NITROGEN+TRIFLUORIDE Search NITROGEN+TRIFLUORIDE
2 DIFLUOROALKYLAMINES 486229 2% 100% 5 Search DIFLUOROALKYLAMINES Search DIFLUOROALKYLAMINES
3 CHEMICAL DRY ETCHING 444546 3% 57% 8 Search CHEMICAL+DRY+ETCHING Search CHEMICAL+DRY+ETCHING
4 DRES 291738 1% 100% 3 Search DRES Search DRES
5 G2MS THEORY 291738 1% 100% 3 Search G2MS+THEORY Search G2MS+THEORY
6 MMTCE 291738 1% 100% 3 Search MMTCE Search MMTCE
7 CHLORINE TRIFLUORIDE 250054 2% 43% 6 Search CHLORINE+TRIFLUORIDE Search CHLORINE+TRIFLUORIDE
8 CHAMBER CLEAN 194492 1% 100% 2 Search CHAMBER+CLEAN Search CHAMBER+CLEAN
9 DOWNFLOW PLASMA 194492 1% 100% 2 Search DOWNFLOW+PLASMA Search DOWNFLOW+PLASMA
10 GLOBAL WARMING EFFECT 194492 1% 100% 2 Search GLOBAL+WARMING+EFFECT Search GLOBAL+WARMING+EFFECT

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 YUN, YB , PARK, SM , KIM, DJ , LEE, NE , KIM, KS , BAE, GH , (2007) VERY HIGH-RATE CHEMICAL DRY ETCHING OF SI IN F-2 REMOTE PLASMAS WITH NITROGEN-CONTAINING ADDITIVE GASES.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 154. ISSUE 10. P. D489-D493 21 88% 5
2 YUN, YB , PARK, SM , KIM, DJ , LEE, NE , KIM, KS , BAE, GH , (2007) EFFECT OF ADDITIVE GASES AND INJECTION METHODS ON CHEMICAL DRY ETCHING OF SILICON NITRIDE, SILICON OXYNITRIDE, AND SILICON OXIDE LAYERS IN F-2 REMOTE PLASMAS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 25. ISSUE 4. P. 980 -985 23 77% 7
3 KIM, DJ , YUN, YB , HWANG, JY , LEE, NE , KIM, KS , BAE, GH , (2007) ROLE OF N-2 DURING CHEMICAL DRY ETCHING OF SILICON OXIDE LAYERS USING NF3/N-2/AR REMOTE PLASMAS.MICROELECTRONIC ENGINEERING. VOL. 84. ISSUE 4. P. 560-566 21 84% 3
4 HWANG, JY , KIM, DJ , LEE, NE , JANG, YC , BAE, GH , (2007) CHEMICAL DRY ETCHING OF SILICON NITRIDE IN F-2/AR REMOTE PLASMAS.SURFACE & COATINGS TECHNOLOGY. VOL. 201. ISSUE 9-11. P. 4922-4925 19 86% 5
5 HWANG, JY , KIM, DJ , LEE, NE , JANG, YC , BAE, GH , (2006) EFFECTS OF N-2 ADDITION ON CHEMICAL DRY ETCHING OF SILICON OXIDE LAYERS IN F-2/N-2/AR REMOTE PLASMAS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 24. ISSUE 4. P. 1380-1385 21 78% 2
6 KANG, SC , KIM, DJ , HWANG, JY , YUN, YB , LEE, NE , JANG, YC , BAE, GH , (2007) CHEMICAL DRY ETCHING OF SILICON OXIDE IN F-2/AR REMOTE PLASMAS.THIN SOLID FILMS. VOL. 515. ISSUE 12. P. 4945-4949 16 89% 2
7 YUN, YB , KIM, DJ , PARK, SM , LEE, NE , KIM, KS , BAE, GH , (2007) LARGE ETCH RATE ENHANCEMENT BY NO-INDUCED SURFACE CHEMICAL REACTION DURING CHEMICAL DRY ETCHING OF SILICON OXIDE IN F-2 REMOTE PLASMAS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 154. ISSUE 4. P. D267 -D272 20 69% 2
8 ANTONIOTTI, P , BOROCCI, S , GRANDINETTI, F , (2004) NITROGEN TRIFLUORIDE AS A BIFUNCTIONAL LEWIS BASE: IMPLICATIONS FOR THE ADSORPTION OF NF3 ON SOLID SURFACES.EUROPEAN JOURNAL OF INORGANIC CHEMISTRY. VOL. . ISSUE 5. P. 1125-1130 29 50% 4
9 YUN, YB , PARK, SM , KIM, DJ , LEE, NE , CHOI, CK , KIM, KS , BAE, GH , (2008) EFFECTS OF VARIOUS ADDITIVE GASES ON CHEMICAL DRY ETCHING RATE ENHANCEMENT OF LOW-K SIOCH LAYER IN F-2/AR REMOTE PLASMAS.THIN SOLID FILMS. VOL. 516. ISSUE 11. P. 3549-3553 16 80% 5
10 OHTAKE, H , WANIFUCHI, T , SASAKI, M , (2016) SIN ETCHING CHARACTERISTICS OF AR/CH3F/O-2 PLASMA AND DEPENDENCE ON SIN FILM DENSITY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 8. P. - 23 43% 0

Classes with closest relation at Level 1


Rank Class id link
1 5594 SOLID STATE TECHNOLOGY//AFTER CORROSION//AL SI CU ETCHING
2 1352 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
3 31981 DIPARTIMENTO CHIM GEN ORGAN PLICATA//ORGANOGERMANIUM IONS//ION TRAP MASS SPECTROMETRY
4 35841 QAS//2 CHLORO 1 1 2 TRIFLUOROETHYL METHYL ETHER//ANHYDROUS FLUORINE GAS
5 21652 ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING
6 36481 REACTOR TECHNOL GRP//AI LEIPUNSKY PHYSICOENERGET//CHLORINE MANUFACTURE
7 34668 HYPOFLUOROUS ACID//HOF CENTER DOT CH3CN//HOFCH3CN
8 25444 FREON DECOMPOSITION//ALKALMAZOTT KEMIAI TANSZEK//DEFLUORINATED REAGENTS
9 28436 POTENTIAL ENERGY FUNCTION//ANALYTICAL POTENTIAL ENERGY FUNCTION//MURRELL SORBIE FUNCTION
10 31344 TWO JET PLASMA//FLUORIDE VOLATILITY METHOD//POTASSIUM TETRAFLUOROBROMATE

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