Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
21652 | 411 | 18.9 | 64% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
19 | 4 | ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON | 523489 |
158 | 3 | NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION | 61209 |
1077 | 2 | PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 9920 |
21652 | 1 | ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING | 411 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ATOMIC LAYER ETCHING | authKW | 429840 | 2% | 64% | 9 |
2 | NEUTRAL BEAM | authKW | 307828 | 6% | 17% | 24 |
3 | NEUTRAL BEAM ETCHING | authKW | 297170 | 2% | 50% | 8 |
4 | EBEP | authKW | 167161 | 1% | 75% | 3 |
5 | FLUID SCI | address | 160422 | 15% | 4% | 61 |
6 | ELECTRON BEAM EXCITED PLASMA | authKW | 157322 | 1% | 35% | 6 |
7 | AR NEUTRAL BEAM | authKW | 148589 | 0% | 100% | 2 |
8 | CCD BUSINESS UNITDEV | address | 148589 | 0% | 100% | 2 |
9 | CCD DEV | address | 148589 | 0% | 100% | 2 |
10 | CHARGE BUILD UP DAMAGE | authKW | 148589 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 7052 | 82% | 0% | 336 |
2 | Materials Science, Coatings & Films | 3562 | 21% | 0% | 88 |
3 | Nanoscience & Nanotechnology | 409 | 11% | 0% | 47 |
4 | Materials Science, Multidisciplinary | 220 | 19% | 0% | 78 |
5 | Physics, Condensed Matter | 156 | 12% | 0% | 50 |
6 | Instruments & Instrumentation | 128 | 6% | 0% | 26 |
7 | Engineering, Electrical & Electronic | 96 | 11% | 0% | 47 |
8 | Physics, Fluids & Plasmas | 39 | 3% | 0% | 12 |
9 | Nuclear Science & Technology | 22 | 3% | 0% | 12 |
10 | Chemistry, Physical | 6 | 6% | 0% | 25 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FLUID SCI | 160422 | 15% | 4% | 61 |
2 | CCD BUSINESS UNITDEV | 148589 | 0% | 100% | 2 |
3 | CCD DEV | 148589 | 0% | 100% | 2 |
4 | ENGN SYNTH BUNKYO KU | 148589 | 0% | 100% | 2 |
5 | COMPONENT GRP | 99058 | 0% | 67% | 2 |
6 | INTELLIGENT NANO PROC | 99058 | 0% | 67% | 2 |
7 | ADV BACK END LINE TECHNOL | 74294 | 0% | 100% | 1 |
8 | ADV PHOTON MAT | 74294 | 0% | 100% | 1 |
9 | ARTMENT DISPLAY SEMICOND PHYS | 74294 | 0% | 100% | 1 |
10 | AUSTIN PLASMA | 74294 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 9688 | 10% | 0% | 43 |
2 | ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES | 5823 | 0% | 4% | 2 |
3 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 4622 | 2% | 1% | 9 |
4 | TECHNICAL PHYSICS | 4289 | 4% | 0% | 18 |
5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2748 | 8% | 0% | 34 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2543 | 6% | 0% | 24 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1983 | 4% | 0% | 18 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 1034 | 4% | 0% | 15 |
9 | THIN SOLID FILMS | 963 | 5% | 0% | 22 |
10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 756 | 1% | 0% | 3 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ATOMIC LAYER ETCHING | 429840 | 2% | 64% | 9 | Search ATOMIC+LAYER+ETCHING | Search ATOMIC+LAYER+ETCHING |
2 | NEUTRAL BEAM | 307828 | 6% | 17% | 24 | Search NEUTRAL+BEAM | Search NEUTRAL+BEAM |
3 | NEUTRAL BEAM ETCHING | 297170 | 2% | 50% | 8 | Search NEUTRAL+BEAM+ETCHING | Search NEUTRAL+BEAM+ETCHING |
4 | EBEP | 167161 | 1% | 75% | 3 | Search EBEP | Search EBEP |
5 | ELECTRON BEAM EXCITED PLASMA | 157322 | 1% | 35% | 6 | Search ELECTRON+BEAM+EXCITED+PLASMA | Search ELECTRON+BEAM+EXCITED+PLASMA |
6 | AR NEUTRAL BEAM | 148589 | 0% | 100% | 2 | Search AR+NEUTRAL+BEAM | Search AR+NEUTRAL+BEAM |
7 | CHARGE BUILD UP DAMAGE | 148589 | 0% | 100% | 2 | Search CHARGE+BUILD+UP+DAMAGE | Search CHARGE+BUILD+UP+DAMAGE |
8 | CURRENT BALANCE EQUATION | 148589 | 0% | 100% | 2 | Search CURRENT+BALANCE+EQUATION | Search CURRENT+BALANCE+EQUATION |
9 | HYPER THERMAL NEUTRAL BEAM | 148589 | 0% | 100% | 2 | Search HYPER+THERMAL+NEUTRAL+BEAM | Search HYPER+THERMAL+NEUTRAL+BEAM |
10 | LOW ANGLE REFLECTION | 148589 | 0% | 100% | 2 | Search LOW+ANGLE+REFLECTION | Search LOW+ANGLE+REFLECTION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | KANARIK, KJ , LILL, T , HUDSON, EA , SRIRAMAN, S , TAN, S , MARKS, J , VAHEDI, V , GOTTSCHO, RA , (2015) OVERVIEW OF ATOMIC LAYER ETCHING IN THE SEMICONDUCTOR INDUSTRY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 33. ISSUE 2. P. - | 43 | 48% | 27 |
2 | OEHRLEIN, GS , METZLER, D , LI, C , (2015) ATOMIC LAYER ETCHING AT THE TIPPING POINT: AN OVERVIEW.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 4. ISSUE 6. P. N5041 -N5053 | 41 | 38% | 15 |
3 | HARA, Y , HAMAGAKI, M , MISE, T , IWATA, N , HARA, T , (2014) SI ETCHING WITH REACTIVE NEUTRAL BEAMS OF VERY LOW ENERGY.JOURNAL OF APPLIED PHYSICS. VOL. 116. ISSUE 22. P. - | 20 | 95% | 0 |
4 | LEE, Y , GEORGE, SM , (2015) ATOMIC LAYER ETCHING OF AL2O3 USING SEQUENTIAL, SELF-LIMITING THERMAL REACTIONS WITH SN(ACAC)(2) AND HYDROGEN FLUORIDE.ACS NANO. VOL. 9. ISSUE 2. P. 2061 -2070 | 22 | 59% | 6 |
5 | HARA, Y , HAMAGAKI, M , MISE, T , HARA, T , (2011) DEVELOPMENT OF NEUTRAL BEAM SOURCE USING ELECTRON BEAM EXCITED PLASMA.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 10. P. - | 19 | 83% | 0 |
6 | LEE, Y , DUMONT, JW , GEORGE, SM , (2015) ATOMIC LAYER ETCHING OF ALF3 USING SEQUENTIAL, SELF-LIMITING THERMAL REACTIONS WITH SN(ACAC)(2) AND HYDROGEN FLUORIDE.JOURNAL OF PHYSICAL CHEMISTRY C. VOL. 119. ISSUE 45. P. 25385 -25393 | 22 | 59% | 0 |
7 | KUBOTA, T , NUKAGA, O , UEKI, S , SUGIYAMA, M , INAMOTO, Y , OHTAKE, H , SAMUKAWA, S , (2010) 200-MM-DIAMETER NEUTRAL BEAM SOURCE BASED ON INDUCTIVELY COUPLED PLASMA ETCHER AND SILICON ETCHING.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 28. ISSUE 5. P. 1169-1174 | 19 | 70% | 4 |
8 | ICHIKI, K , HATAKEYAMA, M , (2008) CHARACTERIZATION OF NEUTRAL BEAM SOURCE USING DC COLD CATHODE DISCHARGE AND ITS APPLICATION PROCESSES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 41. ISSUE 2. P. - | 21 | 66% | 5 |
9 | LEE, Y , DUMONT, JW , GEORGE, SM , (2015) MECHANISM OF THERMAL AL2O3 ATOMIC LAYER ETCHING USING SEQUENTIAL REACTIONS WITH SN(ACAC)(2) AND HF.CHEMISTRY OF MATERIALS. VOL. 27. ISSUE 10. P. 3648 -3657 | 21 | 50% | 1 |
10 | ECONOMOU, DJ , (2008) FAST (TENS TO HUNDREDS OF EV) NEUTRAL BEAMS FOR MATERIALS PROCESSING.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 41. ISSUE 2. P. - | 29 | 42% | 13 |
Classes with closest relation at Level 1 |