Class information for:
Level 1: ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
1352 2703 23.6 70%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
19 4 ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON 523489
158 3       NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION 61209
1077 2             PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9920
1352 1                   ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 2703

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT DEVICES MAT TECHNOL address 548927 2% 90% 54
2 PLASMA ETCHING authKW 264971 5% 18% 127
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A journal 188863 18% 3% 486
4 SIO2 ETCHING authKW 187117 1% 61% 27
5 RIE LAG authKW 135903 1% 63% 19
6 TECHNOL MICROELECT address 124179 2% 25% 44
7 ETCH MECHANISM authKW 122984 1% 78% 14
8 CF2 authKW 115508 1% 68% 15
9 ETCH RATE authKW 100389 1% 26% 34
10 FLUOROCARBON PLASMA authKW 99431 1% 46% 19

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 42060 78% 0% 2109
2 Materials Science, Coatings & Films 40206 28% 0% 754
3 Nanoscience & Nanotechnology 9489 21% 0% 555
4 Engineering, Electrical & Electronic 3498 23% 0% 616
5 Physics, Fluids & Plasmas 1783 7% 0% 183
6 Electrochemistry 469 4% 0% 112
7 Materials Science, Multidisciplinary 458 12% 0% 337
8 Physics, Condensed Matter 393 8% 0% 229
9 Instruments & Instrumentation 311 4% 0% 114
10 Optics 168 5% 0% 129

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT DEVICES MAT TECHNOL 548927 2% 90% 54
2 TECHNOL MICROELECT 124179 2% 25% 44
3 MICROELECT DEVICES MAT TECHNOL 70705 0% 52% 12
4 LSI BASIC 70371 0% 69% 9
5 MAT MACHINERY GRP 56475 0% 100% 5
6 CONTROL RUMENTAT ENGN 49017 2% 8% 53
7 PLASMA SUR E INTERACT 46115 0% 58% 7
8 SI SYST S 45180 0% 100% 4
9 CHEM ENGN ELECT ENGN COMP SCI 33885 0% 100% 3
10 SEMICOND TECHNOL DEV 31794 0% 22% 13

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 188863 18% 3% 486
2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 61375 11% 2% 301
3 PLASMA SOURCES SCIENCE & TECHNOLOGY 26256 3% 3% 80
4 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 19473 9% 1% 232
5 MICROELECTRONIC ENGINEERING 13330 4% 1% 110
6 PLASMA CHEMISTRY AND PLASMA PROCESSING 6142 1% 2% 28
7 JOURNAL OF MICROMECHANICS AND MICROENGINEERING 6089 2% 1% 55
8 JAPANESE JOURNAL OF APPLIED PHYSICS 5775 3% 1% 91
9 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 4557 4% 0% 112
10 VACUUM 4046 2% 1% 59

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 PLASMA ETCHING 264971 5% 18% 127 Search PLASMA+ETCHING Search PLASMA+ETCHING
2 SIO2 ETCHING 187117 1% 61% 27 Search SIO2+ETCHING Search SIO2+ETCHING
3 RIE LAG 135903 1% 63% 19 Search RIE+LAG Search RIE+LAG
4 ETCH MECHANISM 122984 1% 78% 14 Search ETCH+MECHANISM Search ETCH+MECHANISM
5 CF2 115508 1% 68% 15 Search CF2 Search CF2
6 ETCH RATE 100389 1% 26% 34 Search ETCH+RATE Search ETCH+RATE
7 FLUOROCARBON PLASMA 99431 1% 46% 19 Search FLUOROCARBON+PLASMA Search FLUOROCARBON+PLASMA
8 ELECTRON SHADING 91488 0% 90% 9 Search ELECTRON+SHADING Search ELECTRON+SHADING
9 IRLAS 90360 0% 100% 8 Search IRLAS Search IRLAS
10 ULTRAHIGH FREQUENCY PLASMA 90360 0% 100% 8 Search ULTRAHIGH+FREQUENCY+PLASMA Search ULTRAHIGH+FREQUENCY+PLASMA

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 JANSEN, HV , DE BOER, MJ , UNNIKRISHNAN, S , LOUWERSE, MC , ELWENSPOEK, MC , (2009) BLACK SILICON METHOD X: A REVIEW ON HIGH SPEED AND SELECTIVE PLASMA ETCHING OF SILICON WITH PROFILE CONTROL: AN IN-DEPTH COMPARISON BETWEEN BOSCH AND CRYOSTAT DRIE PROCESSES AS A ROADMAP TO NEXT GENERATION EQUIPMENT.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 19. ISSUE 3. P. - 124 53% 103
2 DONNELLY, VM , KORNBLIT, A , (2013) PLASMA ETCHING: YESTERDAY, TODAY, AND TOMORROW.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 31. ISSUE 5. P. - 113 43% 97
3 BANNA, S , AGARWAL, A , CUNGE, G , DARNON, M , PARGON, E , JOUBERT, O , (2012) PULSED HIGH-DENSITY PLASMAS FOR ADVANCED DRY ETCHING PROCESSES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 30. ISSUE 4. P. - 77 73% 51
4 MOUREY, O , PETIT-ETIENNE, C , CUNGE, G , DARNON, M , DESPIAU-PUJO, E , BRICHON, P , LATTU-ROMAIN, E , PONS, M , JOUBERT, O , (2016) ROUGHNESS GENERATION DURING SI ETCHING IN CL-2 PULSED PLASMA.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 34. ISSUE 4. P. - 56 81% 1
5 NAKAZAKI, N , TAKAO, Y , ERIGUCHI, K , ONO, K , (2015) MOLECULAR DYNAMICS SIMULATIONS OF SI ETCHING IN CL- AND BR-BASED PLASMAS: CL+ AND BR+ ION INCIDENCE IN THE PRESENCE OF CL AND BR NEUTRALS.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 23. P. - 61 76% 4
6 DUSSART, R , TILLOCHER, T , LEFAUCHEUX, P , BOUFNICHEL, M , (2014) PLASMA CRYOGENIC ETCHING OF SILICON: FROM THE EARLY DAYS TO TODAY'S ADVANCED TECHNOLOGIES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 47. ISSUE 12. P. - 62 64% 26
7 KUBOI, N , FUKASAWA, M , TATSUMI, T , (2016) ADVANCED SIMULATION TECHNOLOGY FOR ETCHING PROCESS DESIGN FOR CMOS DEVICE APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 7. P. - 74 63% 0
8 WU, BQ , KUMAR, A , PAMARTHY, S , (2010) HIGH ASPECT RATIO SILICON ETCH: A REVIEW.JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 5. P. - 52 67% 174
9 KUBOI, N , TATSUMI, T , KINOSHITA, T , SHIGETOSHI, T , FUKASAWA, M , KOMACHI, J , ANSAI, H , (2015) PREDICTION OF PLASMA-INDUCED DAMAGE DISTRIBUTION DURING SILICON NITRIDE ETCHING USING ADVANCED THREE-DIMENSIONAL VOXEL MODEL.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 33. ISSUE 6. P. - 54 82% 0
10 NAKAZAKI, N , TAKAO, Y , ERIGUCHI, K , ONO, K , (2014) MOLECULAR DYNAMICS SIMULATIONS OF SILICON CHLORIDE ION INCIDENCE DURING SI ETCHING IN CL-BASED PLASMAS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 5. P. - 49 89% 2

Classes with closest relation at Level 1


Rank Class id link
1 5594 SOLID STATE TECHNOLOGY//AFTER CORROSION//AL SI CU ETCHING
2 21652 ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING
3 24369 NITROGEN TRIFLUORIDE//DIFLUOROALKYLAMINES//CHEMICAL DRY ETCHING
4 868 PLASMA SOURCES SCIENCE & TECHNOLOGY//CAPACITIVELY COUPLED PLASMA//PLASMA ATOM PHYS
5 26085 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//MAGNETIC TUNNEL JUNCTION MATERIALS
6 27344 WET ETCHING OF GLASS//DEEP GLASS ETCHING//NI HARD MASK
7 35406 NEUTRAL LOOP DISCHARGE//NLD PLASMA//MAGNETIC NEUTRAL LINE
8 32698 AS EURATOM MHEST//CRACKING COEFFICIENTS//AMORPHOUS FILMS A C D
9 20485 FLUORINATED AMORPHOUS CARBON//A C F//FLUORINATED AMORPHOUS CARBON FILMS
10 19470 PLANE PLASMA DISCHARGE//ENERGY INFLUX//DRY DEVELOPMENT

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