Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
5594 | 1599 | 20.5 | 49% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
19 | 4 | ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON | 523489 |
158 | 3 | NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION | 61209 |
1077 | 2 | PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 9920 |
5594 | 1 | SOLID STATE TECHNOLOGY//AFTER CORROSION//AL SI CU ETCHING | 1599 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SOLID STATE TECHNOLOGY | journal | 76174 | 5% | 5% | 86 |
2 | AFTER CORROSION | authKW | 57284 | 0% | 100% | 3 |
3 | AL SI CU ETCHING | authKW | 57284 | 0% | 100% | 3 |
4 | T PJT MEMORY DEVICE SOLUT NETWORK | address | 57284 | 0% | 100% | 3 |
5 | POST ETCHING TREATMENTS | authKW | 38190 | 0% | 100% | 2 |
6 | POST METAL ETCH STRIP | authKW | 38190 | 0% | 100% | 2 |
7 | ZERO ENERGY SIMS | authKW | 38190 | 0% | 100% | 2 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | journal | 27829 | 10% | 1% | 156 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | journal | 27112 | 9% | 1% | 142 |
10 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | journal | 25871 | 13% | 1% | 202 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 19733 | 25% | 0% | 407 |
2 | Physics, Applied | 16042 | 63% | 0% | 1013 |
3 | Electrochemistry | 3453 | 13% | 0% | 206 |
4 | Engineering, Electrical & Electronic | 2038 | 23% | 0% | 362 |
5 | Nanoscience & Nanotechnology | 1575 | 11% | 0% | 182 |
6 | Physics, Condensed Matter | 1450 | 17% | 0% | 279 |
7 | Materials Science, Multidisciplinary | 184 | 11% | 0% | 176 |
8 | Chemistry, Physical | 101 | 9% | 0% | 138 |
9 | Instruments & Instrumentation | 77 | 3% | 0% | 49 |
10 | COMPUTER APPLICATIONS & CYBERNETICS | 60 | 0% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | T PJT MEMORY DEVICE SOLUT NETWORK | 57284 | 0% | 100% | 3 |
2 | ASSOC EURATUM CEA | 19095 | 0% | 100% | 1 |
3 | CNRS UNITE 844 | 19095 | 0% | 100% | 1 |
4 | ENVIRONMENTALLY BENIGN ETCHING TECHNOL | 19095 | 0% | 100% | 1 |
5 | FAB TEAM 2PROC TECHNOL GRP 2 | 19095 | 0% | 100% | 1 |
6 | JUNGWON GU | 19095 | 0% | 100% | 1 |
7 | KILBY FABRICAT PROC ENGN | 19095 | 0% | 100% | 1 |
8 | LETIG SI | 19095 | 0% | 100% | 1 |
9 | LPD DFA | 19095 | 0% | 100% | 1 |
10 | MICROELECT RUMENTAT GRP | 19095 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID STATE TECHNOLOGY | 76174 | 5% | 5% | 86 |
2 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 27829 | 10% | 1% | 156 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 27112 | 9% | 1% | 142 |
4 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 25871 | 13% | 1% | 202 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 14493 | 2% | 3% | 30 |
6 | VACUUM | 6921 | 4% | 1% | 59 |
7 | JOURNAL OF APPLIED PHYSICS | 3207 | 9% | 0% | 137 |
8 | SOVIET MICROELECTRONICS | 3116 | 0% | 2% | 7 |
9 | PLASMA CHEMISTRY AND PLASMA PROCESSING | 2591 | 1% | 1% | 14 |
10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2158 | 1% | 1% | 10 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | AFTER CORROSION | 57284 | 0% | 100% | 3 | Search AFTER+CORROSION | Search AFTER+CORROSION |
2 | AL SI CU ETCHING | 57284 | 0% | 100% | 3 | Search AL+SI+CU+ETCHING | Search AL+SI+CU+ETCHING |
3 | POST ETCHING TREATMENTS | 38190 | 0% | 100% | 2 | Search POST+ETCHING+TREATMENTS | Search POST+ETCHING+TREATMENTS |
4 | POST METAL ETCH STRIP | 38190 | 0% | 100% | 2 | Search POST+METAL+ETCH+STRIP | Search POST+METAL+ETCH+STRIP |
5 | ZERO ENERGY SIMS | 38190 | 0% | 100% | 2 | Search ZERO+ENERGY+SIMS | Search ZERO+ENERGY+SIMS |
6 | 1356 MHZ GENERATOR | 19095 | 0% | 100% | 1 | Search 1356+MHZ+GENERATOR | Search 1356+MHZ+GENERATOR |
7 | 2 MHZ GENERATOR | 19095 | 0% | 100% | 1 | Search 2+MHZ+GENERATOR | Search 2+MHZ+GENERATOR |
8 | 2 STEP ETCHING | 19095 | 0% | 100% | 1 | Search 2+STEP+ETCHING | Search 2+STEP+ETCHING |
9 | ADVANCED AQUEOUS CLEANER AAC TM | 19095 | 0% | 100% | 1 | Search ADVANCED+AQUEOUS+CLEANER+AAC+TM | Search ADVANCED+AQUEOUS+CLEANER+AAC+TM |
10 | AL CU ETCHING | 19095 | 0% | 100% | 1 | Search AL+CU+ETCHING | Search AL+CU+ETCHING |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | WINTERS, HF , COBURN, JW , (1992) SURFACE SCIENCE ASPECTS OF ETCHING REACTIONS.SURFACE SCIENCE REPORTS. VOL. 14. ISSUE 4-6. P. 161-269 | 100 | 61% | 336 |
2 | FONASH, SJ , (1990) AN OVERVIEW OF DRY ETCHING DAMAGE AND CONTAMINATION EFFECTS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 137. ISSUE 12. P. 3885-3892 | 36 | 88% | 99 |
3 | HEFTY, RC , HOLT, JR , TATE, MR , CEYER, ST , (2009) MECHANISM AND DYNAMICS OF THE REACTION OF XEF2 WITH FLUORINATED SI(100): POSSIBLE ROLE OF GAS PHASE DISSOCIATION OF A SURFACE REACTION PRODUCT IN PLASMALESS ETCHING.JOURNAL OF CHEMICAL PHYSICS. VOL. 130. ISSUE 16. P. - | 28 | 64% | 5 |
4 | VUGTS, MJM , JOOSTEN, GJP , VANOOSTERUM, A , SENHORST, HAJ , BEIJERINCK, HCW , (1994) SPONTANEOUS ETCHING OF SI(100) BY XEF2 - TEST-CASE FOR A NEW BEAM SURFACE EXPERIMENT.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 12. ISSUE 6. P. 2999-3011 | 26 | 96% | 18 |
5 | BRAULT, P , RANSON, P , ESTRADESZWARCKOPF, H , ROUSSEAU, B , (1990) CHEMICAL PHYSICS OF FLUORINE PLASMA-ETCHED SILICON SURFACES - STUDY OF SURFACE CONTAMINATIONS.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 4. P. 1702-1709 | 36 | 82% | 23 |
6 | FRANK, WE , (1997) APPROACHES FOR PATTERNING OF ALUMINUM.MICROELECTRONIC ENGINEERING. VOL. 33. ISSUE 1-4. P. 85-100 | 28 | 78% | 13 |
7 | PELLETIER, J , (1987) A MODEL FOR THE HALOGEN-BASED PLASMA-ETCHING OF SILICON.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 20. ISSUE 7. P. 858-869 | 36 | 92% | 31 |
8 | WINTERS, HF , PLUMB, IC , (1991) ETCHING REACTIONS FOR SILICON WITH F-ATOMS - PRODUCT DISTRIBUTIONS AND ION ENHANCEMENT MECHANISMS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 9. ISSUE 2. P. 197-207 | 27 | 90% | 71 |
9 | VUGTS, MJM , HERMANS, LJF , BEIJERINCK, HCW , (1996) ION-ASSISTED SI/XEF2-ETCHING: INFLUENCE OF ION/NEUTRAL FLUX RATIO AND ION ENERGY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 14. ISSUE 4. P. 2138-2150 | 27 | 79% | 13 |
10 | COBURN, JW , (1994) ION-ASSISTED ETCHING OF SI WITH CL2 - THE EFFECT OF FLUX RATIO.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 12. ISSUE 3. P. 1384-1389 | 25 | 86% | 31 |
Classes with closest relation at Level 1 |