Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
17198 | 611 | 12.4 | 43% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
19 | 4 | ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON | 523489 |
158 | 3 | NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION | 61209 |
1077 | 2 | PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 9920 |
17198 | 1 | GATE CHARGING//PLASMA CHARGING DAMAGE//CHARGING DAMAGE | 611 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GATE CHARGING | authKW | 299849 | 1% | 100% | 6 |
2 | PLASMA CHARGING DAMAGE | authKW | 179904 | 1% | 60% | 6 |
3 | CHARGING DAMAGE | authKW | 161907 | 1% | 36% | 9 |
4 | CHARGING PROTECTION | authKW | 149924 | 0% | 100% | 3 |
5 | CHARGE BUILD UP | authKW | 126486 | 1% | 28% | 9 |
6 | ANTENNA RATIO | authKW | 112442 | 0% | 75% | 3 |
7 | PLASMA DAMAGE | authKW | 100523 | 2% | 15% | 13 |
8 | ANTENNA RATIO AR | authKW | 99950 | 0% | 100% | 2 |
9 | BACKEND BE | authKW | 99950 | 0% | 100% | 2 |
10 | CENT RELIABIL | address | 99950 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Instruments & Instrumentation | 9849 | 40% | 0% | 243 |
2 | Nuclear Science & Technology | 8571 | 35% | 0% | 213 |
3 | Physics, Nuclear | 6468 | 31% | 0% | 189 |
4 | Physics, Atomic, Molecular & Chemical | 3499 | 30% | 0% | 185 |
5 | Physics, Applied | 3158 | 46% | 0% | 284 |
6 | Engineering, Electrical & Electronic | 2290 | 37% | 0% | 224 |
7 | Materials Science, Coatings & Films | 598 | 8% | 0% | 46 |
8 | Nanoscience & Nanotechnology | 433 | 10% | 0% | 60 |
9 | Physics, Condensed Matter | 333 | 14% | 0% | 86 |
10 | Engineering, Manufacturing | 97 | 2% | 0% | 15 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CENT RELIABIL | 99950 | 0% | 100% | 2 |
2 | SEMICOND EQUIPMENT OPERAT | 79955 | 1% | 40% | 4 |
3 | ADV COMP SYST UNIT | 49975 | 0% | 100% | 1 |
4 | CHAIR ELECT IL | 49975 | 0% | 100% | 1 |
5 | MOS YOU 4 | 49975 | 0% | 100% | 1 |
6 | SEMICOND EQUIPMENT OPEAT | 49975 | 0% | 100% | 1 |
7 | SILICON TECHNOL DEV TEAM | 49975 | 0% | 100% | 1 |
8 | TECH PHYS MATL SCI MFA | 49975 | 0% | 100% | 1 |
9 | TECHNOL DEV BEOL PROJECT | 49975 | 0% | 100% | 1 |
10 | TECHNOL DEV SPECIAL PROJECT | 49975 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 54377 | 30% | 1% | 185 |
2 | SOLID STATE TECHNOLOGY | 43143 | 7% | 2% | 40 |
3 | IEEE ELECTRON DEVICE LETTERS | 11204 | 7% | 1% | 45 |
4 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 3849 | 2% | 1% | 11 |
5 | MICROELECTRONICS RELIABILITY | 3463 | 4% | 0% | 22 |
6 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 3136 | 2% | 0% | 13 |
7 | MICROCONTAMINATION | 1997 | 0% | 4% | 1 |
8 | REVIEW OF SCIENTIFIC INSTRUMENTS | 1986 | 6% | 0% | 35 |
9 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1861 | 4% | 0% | 24 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1421 | 4% | 0% | 22 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GATE CHARGING | 299849 | 1% | 100% | 6 | Search GATE+CHARGING | Search GATE+CHARGING |
2 | PLASMA CHARGING DAMAGE | 179904 | 1% | 60% | 6 | Search PLASMA+CHARGING+DAMAGE | Search PLASMA+CHARGING+DAMAGE |
3 | CHARGING DAMAGE | 161907 | 1% | 36% | 9 | Search CHARGING+DAMAGE | Search CHARGING+DAMAGE |
4 | CHARGING PROTECTION | 149924 | 0% | 100% | 3 | Search CHARGING+PROTECTION | Search CHARGING+PROTECTION |
5 | CHARGE BUILD UP | 126486 | 1% | 28% | 9 | Search CHARGE+BUILD+UP | Search CHARGE+BUILD+UP |
6 | ANTENNA RATIO | 112442 | 0% | 75% | 3 | Search ANTENNA+RATIO | Search ANTENNA+RATIO |
7 | PLASMA DAMAGE | 100523 | 2% | 15% | 13 | Search PLASMA+DAMAGE | Search PLASMA+DAMAGE |
8 | ANTENNA RATIO AR | 99950 | 0% | 100% | 2 | Search ANTENNA+RATIO+AR | Search ANTENNA+RATIO+AR |
9 | BACKEND BE | 99950 | 0% | 100% | 2 | Search BACKEND+BE | Search BACKEND+BE |
10 | LAYOUT SPACE | 99950 | 0% | 100% | 2 | Search LAYOUT+SPACE | Search LAYOUT+SPACE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | TSUI, BY , LIN, SS , TSAI, CS , HSIA, CC , (2000) PLASMA CHARGING DAMAGE DURING CONTACT HOLE ETCH IN HIGH-DENSITY PLASMA ETCHER.MICROELECTRONICS RELIABILITY. VOL. 40. ISSUE 12. P. 2039 -2046 | 14 | 78% | 2 |
2 | TSAI, YP , WU, CH , LIN, CJ , KING, YC , (2016) WAFER-LEVEL MAPPING OF PLASMA-INDUCED CHARGING EFFECT BY ON-CHIP IN SITU RECORDERS IN FINFET TECHNOLOGIES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 6. P. 2497 -2502 | 8 | 89% | 0 |
3 | PASKALEVA, A , NOVKOVSKI, N , ATANASSOVA, E , PECOVSKA-GJORGJEVICH, M , (2003) DENSITY AND SPATIAL DISTRIBUTION OF MERIE-LIKE PLASMA INDUCED DEFECTS IN SIO2.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 199. ISSUE 2. P. 243-249 | 13 | 72% | 0 |
4 | WU, CP , KOLONDRA, F , (1991) WAFER CHARGING CONTROL IN HIGH-CURRENT IMPLANTERS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 138. ISSUE 10. P. 3100-3107 | 13 | 100% | 12 |
5 | CURRENT, MI , LUKASZEK, W , VELLA, MC , TRIPSAS, NH , (1995) SURFACE-CHARGE CONTROL DURING HIGH-CURRENT ION-IMPLANTATION - CHARACTERIZATION WITH CHARM-2 SENSORS.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 96. ISSUE 1-2. P. 34-38 | 10 | 100% | 1 |
6 | VISWANATHAN, CR , (1999) PLASMA-INDUCED DAMAGE.MICROELECTRONIC ENGINEERING. VOL. 49. ISSUE 1-2. P. 65-81 | 9 | 90% | 11 |
7 | REIMBOLD, G , (1996) EFFECTS OF PLASMA INDUCED CHARGES ON THIN OXIDE OF CMOS TECHNOLOGIES.MICROELECTRONICS JOURNAL. VOL. 27. ISSUE 7. P. 599-609 | 9 | 100% | 1 |
8 | LARSON, LA , KEENAN, WA , JOHNSON, WH , (1993) A SHEET RESISTANCE STANDARD FOR ION IMPLANT.SOLID STATE TECHNOLOGY. VOL. 36. ISSUE 10. P. 67-& | 10 | 100% | 0 |
9 | TRABZON, L , AWADELKARIM, OO , (1998) DAMAGE TO N-MOSFETS FROM ELECTRICAL STRESS RELATIONSHIP TO PROCESSING DAMAGE AND IMPACT ON DEVICE RELIABILITY.MICROELECTRONICS RELIABILITY. VOL. 38. ISSUE 4. P. 651-657 | 11 | 73% | 10 |
10 | MCKENNA, CM , (1989) NEW DEVELOPMENT IN ION-IMPLANTATION AND RTP EQUIPMENT FOR HIGH PRODUCTIVITY.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 37-8. ISSUE . P. 448-455 | 12 | 92% | 2 |
Classes with closest relation at Level 1 |