Class information for:
Level 1: GATE CHARGING//PLASMA CHARGING DAMAGE//CHARGING DAMAGE

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
17198 611 12.4 43%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
19 4 ASTRONOMY & ASTROPHYSICS//ASTROPHYSICAL JOURNAL//ASTRON 523489
158 3       NUCLEAR FUSION//PHYSICS, FLUIDS & PLASMAS//PLASMA PHYSICS AND CONTROLLED FUSION 61209
1077 2             PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9920
17198 1                   GATE CHARGING//PLASMA CHARGING DAMAGE//CHARGING DAMAGE 611

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 GATE CHARGING authKW 299849 1% 100% 6
2 PLASMA CHARGING DAMAGE authKW 179904 1% 60% 6
3 CHARGING DAMAGE authKW 161907 1% 36% 9
4 CHARGING PROTECTION authKW 149924 0% 100% 3
5 CHARGE BUILD UP authKW 126486 1% 28% 9
6 ANTENNA RATIO authKW 112442 0% 75% 3
7 PLASMA DAMAGE authKW 100523 2% 15% 13
8 ANTENNA RATIO AR authKW 99950 0% 100% 2
9 BACKEND BE authKW 99950 0% 100% 2
10 CENT RELIABIL address 99950 0% 100% 2

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Instruments & Instrumentation 9849 40% 0% 243
2 Nuclear Science & Technology 8571 35% 0% 213
3 Physics, Nuclear 6468 31% 0% 189
4 Physics, Atomic, Molecular & Chemical 3499 30% 0% 185
5 Physics, Applied 3158 46% 0% 284
6 Engineering, Electrical & Electronic 2290 37% 0% 224
7 Materials Science, Coatings & Films 598 8% 0% 46
8 Nanoscience & Nanotechnology 433 10% 0% 60
9 Physics, Condensed Matter 333 14% 0% 86
10 Engineering, Manufacturing 97 2% 0% 15

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 CENT RELIABIL 99950 0% 100% 2
2 SEMICOND EQUIPMENT OPERAT 79955 1% 40% 4
3 ADV COMP SYST UNIT 49975 0% 100% 1
4 CHAIR ELECT IL 49975 0% 100% 1
5 MOS YOU 4 49975 0% 100% 1
6 SEMICOND EQUIPMENT OPEAT 49975 0% 100% 1
7 SILICON TECHNOL DEV TEAM 49975 0% 100% 1
8 TECH PHYS MATL SCI MFA 49975 0% 100% 1
9 TECHNOL DEV BEOL PROJECT 49975 0% 100% 1
10 TECHNOL DEV SPECIAL PROJECT 49975 0% 100% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 54377 30% 1% 185
2 SOLID STATE TECHNOLOGY 43143 7% 2% 40
3 IEEE ELECTRON DEVICE LETTERS 11204 7% 1% 45
4 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 3849 2% 1% 11
5 MICROELECTRONICS RELIABILITY 3463 4% 0% 22
6 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH 3136 2% 0% 13
7 MICROCONTAMINATION 1997 0% 4% 1
8 REVIEW OF SCIENTIFIC INSTRUMENTS 1986 6% 0% 35
9 IEEE TRANSACTIONS ON ELECTRON DEVICES 1861 4% 0% 24
10 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1421 4% 0% 22

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 GATE CHARGING 299849 1% 100% 6 Search GATE+CHARGING Search GATE+CHARGING
2 PLASMA CHARGING DAMAGE 179904 1% 60% 6 Search PLASMA+CHARGING+DAMAGE Search PLASMA+CHARGING+DAMAGE
3 CHARGING DAMAGE 161907 1% 36% 9 Search CHARGING+DAMAGE Search CHARGING+DAMAGE
4 CHARGING PROTECTION 149924 0% 100% 3 Search CHARGING+PROTECTION Search CHARGING+PROTECTION
5 CHARGE BUILD UP 126486 1% 28% 9 Search CHARGE+BUILD+UP Search CHARGE+BUILD+UP
6 ANTENNA RATIO 112442 0% 75% 3 Search ANTENNA+RATIO Search ANTENNA+RATIO
7 PLASMA DAMAGE 100523 2% 15% 13 Search PLASMA+DAMAGE Search PLASMA+DAMAGE
8 ANTENNA RATIO AR 99950 0% 100% 2 Search ANTENNA+RATIO+AR Search ANTENNA+RATIO+AR
9 BACKEND BE 99950 0% 100% 2 Search BACKEND+BE Search BACKEND+BE
10 LAYOUT SPACE 99950 0% 100% 2 Search LAYOUT+SPACE Search LAYOUT+SPACE

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 TSUI, BY , LIN, SS , TSAI, CS , HSIA, CC , (2000) PLASMA CHARGING DAMAGE DURING CONTACT HOLE ETCH IN HIGH-DENSITY PLASMA ETCHER.MICROELECTRONICS RELIABILITY. VOL. 40. ISSUE 12. P. 2039 -2046 14 78% 2
2 TSAI, YP , WU, CH , LIN, CJ , KING, YC , (2016) WAFER-LEVEL MAPPING OF PLASMA-INDUCED CHARGING EFFECT BY ON-CHIP IN SITU RECORDERS IN FINFET TECHNOLOGIES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 6. P. 2497 -2502 8 89% 0
3 PASKALEVA, A , NOVKOVSKI, N , ATANASSOVA, E , PECOVSKA-GJORGJEVICH, M , (2003) DENSITY AND SPATIAL DISTRIBUTION OF MERIE-LIKE PLASMA INDUCED DEFECTS IN SIO2.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 199. ISSUE 2. P. 243-249 13 72% 0
4 WU, CP , KOLONDRA, F , (1991) WAFER CHARGING CONTROL IN HIGH-CURRENT IMPLANTERS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 138. ISSUE 10. P. 3100-3107 13 100% 12
5 CURRENT, MI , LUKASZEK, W , VELLA, MC , TRIPSAS, NH , (1995) SURFACE-CHARGE CONTROL DURING HIGH-CURRENT ION-IMPLANTATION - CHARACTERIZATION WITH CHARM-2 SENSORS.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 96. ISSUE 1-2. P. 34-38 10 100% 1
6 VISWANATHAN, CR , (1999) PLASMA-INDUCED DAMAGE.MICROELECTRONIC ENGINEERING. VOL. 49. ISSUE 1-2. P. 65-81 9 90% 11
7 REIMBOLD, G , (1996) EFFECTS OF PLASMA INDUCED CHARGES ON THIN OXIDE OF CMOS TECHNOLOGIES.MICROELECTRONICS JOURNAL. VOL. 27. ISSUE 7. P. 599-609 9 100% 1
8 LARSON, LA , KEENAN, WA , JOHNSON, WH , (1993) A SHEET RESISTANCE STANDARD FOR ION IMPLANT.SOLID STATE TECHNOLOGY. VOL. 36. ISSUE 10. P. 67-& 10 100% 0
9 TRABZON, L , AWADELKARIM, OO , (1998) DAMAGE TO N-MOSFETS FROM ELECTRICAL STRESS RELATIONSHIP TO PROCESSING DAMAGE AND IMPACT ON DEVICE RELIABILITY.MICROELECTRONICS RELIABILITY. VOL. 38. ISSUE 4. P. 651-657 11 73% 10
10 MCKENNA, CM , (1989) NEW DEVELOPMENT IN ION-IMPLANTATION AND RTP EQUIPMENT FOR HIGH PRODUCTIVITY.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 37-8. ISSUE . P. 448-455 12 92% 2

Classes with closest relation at Level 1



Rank Class id link
1 21652 ATOMIC LAYER ETCHING//NEUTRAL BEAM//NEUTRAL BEAM ETCHING
2 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
3 21285 SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY
4 27183 NEGATIVE ION IMPLANTATION//DELTA LAYERED NANOPARTICLES//SOL GEL TITANIUM OXIDE FILM
5 11344 NEUTRON DEPTH PROFILING//RANGE PARAMETERS//LATERAL STRAGGLING
6 12287 ECR PLASMA//UNIFORM PLASMA//ELECTRON CYCLOTRON RESONANCE DISCHARGE
7 1352 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
8 30197 EDDY CURRENT SEPTUM MAGNET//DAMPING OF HARMONIC RESONANCE//DC ACTIVE POWER FILTER
9 18794 RFQ//RFQ ACCELERATOR//SFRFQ
10 33327 ANGLE RESOLVED MEASUREMENT//APMSF//FLOW THROUGH COLUMN

Go to start page