Class information for:
Level 1: ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
7126 1402 18.1 60%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1299 2             SIGE//STRAINED SI//VIRTUAL SUBSTRATE 8578
7126 1                   ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH 1402

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ATOMIC LAYER DOPING authKW 340265 2% 63% 25
2 SELECTIVE EPITAXIAL GROWTH authKW 258342 2% 38% 31
3 SI EPITAXIAL GROWTH authKW 133390 0% 88% 7
4 ELEVATED SOURCE DRAIN authKW 131748 1% 55% 11
5 GERMANIUM SILICON COMPOUNDS authKW 112000 0% 86% 6
6 ELECT INTELLIGENT SYST address 104884 2% 15% 33
7 RPCVD authKW 97993 1% 50% 9
8 SIGE authKW 92782 5% 6% 73
9 ATOMICALLY CONTROLLED PROCESSING authKW 87113 0% 100% 4
10 REDUCED PRESSURE CHEMICAL VAPOUR authKW 87113 0% 100% 4

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Materials Science, Coatings & Films 18422 26% 0% 368
2 Physics, Applied 14025 63% 0% 887
3 Electrochemistry 2970 13% 0% 179
4 Physics, Condensed Matter 2636 24% 0% 337
5 Engineering, Electrical & Electronic 2368 26% 0% 359
6 Crystallography 2084 11% 0% 153
7 Materials Science, Multidisciplinary 1810 27% 0% 381
8 Nanoscience & Nanotechnology 270 6% 0% 79
9 Physics, Multidisciplinary 42 4% 0% 61
10 Chemistry, Physical 3 5% 0% 66

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT INTELLIGENT SYST 104884 2% 15% 33
2 NANOELECT SPINTRON 82949 3% 11% 36
3 MUSASHINO OFF 81980 1% 47% 8
4 ELECT COMMUN 31787 5% 2% 77
5 MICROELECT INFORMAT TECHNOL IMIT 29036 0% 67% 2
6 INTEGRATED DEVICES CIRCUITS 28648 0% 26% 5
7 300MM DEV PROGRAM 21778 0% 100% 1
8 ADV PROC TEAM 3 21778 0% 100% 1
9 ADVANCE TECHOL DEV 21778 0% 100% 1
10 ANALOG ICS 21778 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 22655 13% 1% 177
2 JOURNAL OF CRYSTAL GROWTH 8061 8% 0% 108
3 THIN SOLID FILMS 6893 8% 0% 108
4 SOLID STATE TECHNOLOGY 5654 2% 1% 22
5 CRYSTAL RESEARCH AND TECHNOLOGY 4532 3% 1% 37
6 APPLIED PHYSICS LETTERS 3834 10% 0% 142
7 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 3599 4% 0% 53
8 IEEE ELECTRON DEVICE LETTERS 3254 3% 0% 37
9 IEEE TRANSACTIONS ON ELECTRON DEVICES 3231 3% 0% 48
10 SOLID-STATE ELECTRONICS 3133 3% 0% 38

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 ATOMIC LAYER DOPING 340265 2% 63% 25 Search ATOMIC+LAYER+DOPING Search ATOMIC+LAYER+DOPING
2 SELECTIVE EPITAXIAL GROWTH 258342 2% 38% 31 Search SELECTIVE+EPITAXIAL+GROWTH Search SELECTIVE+EPITAXIAL+GROWTH
3 SI EPITAXIAL GROWTH 133390 0% 88% 7 Search SI+EPITAXIAL+GROWTH Search SI+EPITAXIAL+GROWTH
4 ELEVATED SOURCE DRAIN 131748 1% 55% 11 Search ELEVATED+SOURCE+DRAIN Search ELEVATED+SOURCE+DRAIN
5 GERMANIUM SILICON COMPOUNDS 112000 0% 86% 6 Search GERMANIUM+SILICON+COMPOUNDS Search GERMANIUM+SILICON+COMPOUNDS
6 RPCVD 97993 1% 50% 9 Search RPCVD Search RPCVD
7 SIGE 92782 5% 6% 73 Search SIGE Search SIGE
8 ATOMICALLY CONTROLLED PROCESSING 87113 0% 100% 4 Search ATOMICALLY+CONTROLLED+PROCESSING Search ATOMICALLY+CONTROLLED+PROCESSING
9 REDUCED PRESSURE CHEMICAL VAPOUR 87113 0% 100% 4 Search REDUCED+PRESSURE+CHEMICAL+VAPOUR Search REDUCED+PRESSURE+CHEMICAL+VAPOUR
10 SIH4 87089 1% 25% 16 Search SIH4 Search SIH4

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 GOULDING, MR , (1993) THE SELECTIVE EPITAXIAL-GROWTH OF SILICON.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 17. ISSUE 1-3. P. 47-67 69 72% 55
2 RADAMSON, HH , KOLAHDOUZ, M , (2015) SELECTIVE EPITAXY GROWTH OF SI1-XGEX LAYERS FOR MOSFETS AND FINFETS.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 26. ISSUE 7. P. 4584 -4603 37 73% 1
3 MUROTA, J , SAKURABA, M , TILLACK, B , (2006) ATOMICALLY CONTROLLED PROCESSING FOR GROUP IV SEMICONDUCTORS BY CHEMICAL VAPOR DEPOSITION.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 45. ISSUE 9A. P. 6767-6785 45 65% 24
4 MUROTA, J , SAKURABA, M , TILLACK, B , (2011) ATOMICALLY CONTROLLED PROCESSING IN SILICON-BASED CVD EPITAXIAL GROWTH.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. VOL. 11. ISSUE 9. P. 8348-8353 25 86% 0
5 KOLAHDOUZ, M , MARESCA, L , GHANDI, R , KHATIBI, A , RADAMSON, HH , (2011) KINETIC MODEL OF SIGE SELECTIVE EPITAXIAL GROWTH USING RPCVD TECHNIQUE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 158. ISSUE 4. P. H457 -H464 23 79% 4
6 HARTMANN, JM , LOUP, V , ROLLAND, G , HOLLIGER, P , LAUGIER, F , VANNUFFEL, C , SEMERIA, MN , (2002) SIGE GROWTH KINETICS AND DOPING IN REDUCED PRESSURE-CHEMICAL VAPOR DEPOSITION.JOURNAL OF CRYSTAL GROWTH. VOL. 236. ISSUE 1-3. P. 10-20 31 69% 45
7 HARTMANN, JM , CHAMPAY, F , LOUP, V , ROLLAND, G , SEMERIA, MN , (2002) EFFECT OF HCL ON THE SIGE GROWTH KINETICS IN REDUCED PRESSURE-CHEMICAL VAPOR DEPOSITION.JOURNAL OF CRYSTAL GROWTH. VOL. 241. ISSUE 1-2. P. 93-100 26 79% 15
8 GOULDING, MR , (1991) THE SELECTIVE EPITAXIAL-GROWTH OF SILICON.JOURNAL DE PHYSIQUE IV. VOL. 1. ISSUE C2. P. 745 -778 39 80% 7
9 HARTMANN, JM , LOUP, V , ROLLAND, G , SEMERIA, MN , (2003) EFFECTS OF TEMPERATURE AND HCL FLOW ON THE SIGE GROWTH KINETICS IN REDUCED PRESSURE-CHEMICAL VAPOR DEPOSITION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 21. ISSUE 6. P. 2524-2529 26 74% 13
10 YASUTAKE, K , KAKIUCHI, H , OHMI, H , INAGAKI, K , OSHIKANE, Y , NAKANO, M , (2011) AN ATOMICALLY CONTROLLED SI FILM FORMATION PROCESS AT LOW TEMPERATURES USING ATMOSPHERIC-PRESSURE VHF PLASMA.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 23. ISSUE 39. P. - 36 42% 3

Classes with closest relation at Level 1


Rank Class id link
1 6615 HYDROGEN SURFACTANT//MANA SATELLITE//DISILANE
2 17136 ARGON PLUS OXYGEN MIXTURE GAS//LATERAL CRYSTALLINE GROWTH//RUMENTAL FRONTIER
3 10828 EPITAXIAL REACTOR//MOCVD REACTOR//PLANETARY REACTOR
4 5738 STRAINED SI1 XGEX SI QUANTUM WELLS//SEGREGANT ASSISTED GROWTH//SI BASED NANOSTRUCTURES
5 15875 SIGEC//SI1 YCY//SI1 X YGEXCY
6 37264 SI O SUPERLATTICE//OXYGEN ATOMIC LAYER//CARRIER CONDUCTION MECHANISM
7 30685 ULTRASHALLOW JUNCTIONS//A REDUCTION METHOD//BORON CHEMICAL VAPOR DEPOSITION
8 3619 SIGE//STRAINED SI//SILICON NANOSCI
9 8494 HYDROGEN TERMINATION//NATIVE OXIDE//HYDRIDE SPECIES
10 29312 CROSS KELVIN RESISTOR CKR//CROSS BRIDGE KELVIN RESISTOR CBKR//POLYMETAL

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