Class information for:
Level 1: SIGEC//SI1 YCY//SI1 X YGEXCY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
15875 687 20.0 75%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1299 2             SIGE//STRAINED SI//VIRTUAL SUBSTRATE 8578
15875 1                   SIGEC//SI1 YCY//SI1 X YGEXCY 687

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SIGEC authKW 589103 4% 51% 26
2 SI1 YCY authKW 500756 2% 87% 13
3 SI1 X YGEXCY authKW 395328 2% 68% 13
4 STRAINED SIC authKW 177784 1% 100% 4
5 SI1 YCY ALLOY authKW 142226 1% 80% 4
6 SILICON GERMANIUM CARBON authKW 142226 1% 80% 4
7 CNRS UA 6004 address 133338 0% 100% 3
8 LOW TEMPERATURE SILICON EPITAXY authKW 101588 1% 57% 4
9 SIGEC ALLOYS authKW 101588 1% 57% 4
10 GROUP IV ALLOYS authKW 100002 0% 75% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 6652 62% 0% 428
2 Physics, Condensed Matter 3591 38% 0% 264
3 Materials Science, Coatings & Films 2859 15% 0% 103
4 Materials Science, Multidisciplinary 803 26% 0% 179
5 Engineering, Electrical & Electronic 280 14% 0% 97
6 Crystallography 153 5% 0% 32
7 Nanoscience & Nanotechnology 95 5% 0% 34
8 Chemistry, Physical 86 11% 0% 73
9 Physics, Multidisciplinary 71 6% 0% 44
10 Microscopy 22 1% 0% 5

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CNRS UA 6004 133338 0% 100% 3
2 MIXED SIGNAL PROC GRP 100002 0% 75% 3
3 KONAGAI 88892 0% 100% 2
4 UMR 7014 4 88892 0% 100% 2
5 CHIM PHYS SOLIDE CNRS UPR 258 44446 0% 100% 1
6 CIS X 128X 44446 0% 100% 1
7 CNRS UPR 1907 44446 0% 100% 1
8 DIFFUS EPI SIGE PROC 44446 0% 100% 1
9 DIPARTIMENTO ENGN MAT 44446 0% 100% 1
10 DRTGRE 17 44446 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 THIN SOLID FILMS 4357 9% 0% 60
2 APPLIED PHYSICS LETTERS 4130 15% 0% 102
3 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2671 3% 0% 22
4 JOURNAL OF APPLIED PHYSICS 1748 10% 0% 66
5 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1720 2% 0% 17
6 SURFACE SCIENCE 1344 4% 0% 29
7 APPLIED SURFACE SCIENCE 1334 5% 0% 33
8 JOURNAL OF CRYSTAL GROWTH 1330 5% 0% 31
9 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1037 3% 0% 20
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 934 4% 0% 26

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SIGEC 589103 4% 51% 26 Search SIGEC Search SIGEC
2 SI1 YCY 500756 2% 87% 13 Search SI1+YCY Search SI1+YCY
3 SI1 X YGEXCY 395328 2% 68% 13 Search SI1+X+YGEXCY Search SI1+X+YGEXCY
4 STRAINED SIC 177784 1% 100% 4 Search STRAINED+SIC Search STRAINED+SIC
5 SI1 YCY ALLOY 142226 1% 80% 4 Search SI1+YCY+ALLOY Search SI1+YCY+ALLOY
6 SILICON GERMANIUM CARBON 142226 1% 80% 4 Search SILICON+GERMANIUM+CARBON Search SILICON+GERMANIUM+CARBON
7 LOW TEMPERATURE SILICON EPITAXY 101588 1% 57% 4 Search LOW+TEMPERATURE+SILICON+EPITAXY Search LOW+TEMPERATURE+SILICON+EPITAXY
8 SIGEC ALLOYS 101588 1% 57% 4 Search SIGEC+ALLOYS Search SIGEC+ALLOYS
9 GROUP IV ALLOYS 100002 0% 75% 3 Search GROUP+IV+ALLOYS Search GROUP+IV+ALLOYS
10 C4 X 4 SURFACE RECONSTRUCTION 88892 0% 100% 2 Search C4+X+4+SURFACE+RECONSTRUCTION Search C4+X+4+SURFACE+RECONSTRUCTION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 EBERL, K , BRUNNER, K , SCHMIDT, OG , (1999) SI1-YCY AND SI1-X-YGEXCY ALLOY LAYERS.GERMANIUM SILICON: PHYSICS AND MATERIALS. VOL. 56. ISSUE . P. 387 -422 73 79% 4
2 SONNET, P , STAUFFER, L , (2006) GENERAL TRENDS OF THE CARBON PENETRATION IN SI(001) SURFACES: INFLUENCES OF RELEVANT PARAMETERS.PROGRESS IN SURFACE SCIENCE. VOL. 81. ISSUE 10-12. P. 444 -487 44 66% 5
3 OSTEN, HJ , (2000) MBE GROWTH AND PROPERTIES OF SUPERSATURATED, CARBON-CONTAINING SILICON/GERMANIUM ALLOYS ON SI(001).THIN SOLID FILMS. VOL. 367. ISSUE 1-2. P. 101-111 35 85% 24
4 ARIMOTO, K , FURUKAWA, H , YAMANAKA, J , YAMAMOTO, C , NAKAGAWA, K , USAMI, N , SAWANO, K , SHIRAKI, Y , (2013) FORMATION OF COMPRESSIVELY STRAINED SI/S1-XCX/SI(100) HETEROSTRUCTURES USING GAS-SOURCE MOLECULAR BEAM EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 362. ISSUE . P. 276-281 28 67% 3
5 KELIRES, PC , (1999) THEORY OF BONDING, STRAIN, AND SEGREGATION IN GERMANIUM-CARBON ALLOYS.PHYSICAL REVIEW B. VOL. 60. ISSUE 15. P. 10837 -10844 27 79% 12
6 WASYLUK, J , PEROVA, TS , MEYER, F , (2010) RAMAN AND FOURIER TRANSFORM INFRARED STUDY OF SUBSTITUTIONAL CARBON INCORPORATION IN RAPID THERMAL CHEMICAL VAPOR DEPOSITED SI1-X-YGEXCY ON (100) SI.JOURNAL OF APPLIED PHYSICS. VOL. 107. ISSUE 2. P. - 18 82% 10
7 LEE, WJ , MA, JW , BAE, JM , JEONG, KS , CHO, MH , LEE, C , CHOI, EJ , KANG, C , (2013) THE EFFECT OF STRUCTURAL AND CHEMICAL BONDING CHANGES ON THE OPTICAL PROPERTIES OF SI/SI1-XCX CORE/SHELL NANOWIRES.JOURNAL OF MATERIALS CHEMISTRY C. VOL. 1. ISSUE 34. P. 5207 -5215 22 63% 2
8 WASYLUK, J , PEROVA, TS , MEYER, F , (2010) DETERMINATION OF SUBSTITUTIONAL CARBON CONTENT IN RAPID THERMAL CHEMICAL VAPOUR DEPOSITED SI-1 (-) (X) (-) YGEXCY ON SI (100) USING RAMAN SPECTROSCOPY.THIN SOLID FILMS. VOL. 518. ISSUE . P. S151-S153 15 100% 1
9 LETHANH, V , CALMES, C , ZHENG, Y , BOUCHIER, D , FORTUNA, V , DUPUY, JC , (2002) IN SITU RHEED MONITORING OF CARBON INCORPORATION DURING SIGEC/SI(001) GROWTH IN A UHV-CVD SYSTEM.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 89. ISSUE 1-3. P. 246-251 21 88% 8
10 DE SALVADOR, D , PETROVICH, M , BERTI, M , ROMANATO, F , NAPOLITANI, E , DRIGO, A , STANGL, J , ZERLAUTH, S , MUHLBERGER, M , SCHAFFLER, F , ET AL (2000) LATTICE PARAMETER OF SI1-X-YGEXCY ALLOYS.PHYSICAL REVIEW B. VOL. 61. ISSUE 19. P. 13005 -13013 25 71% 51

Classes with closest relation at Level 1


Rank Class id link
1 37133 SICGE//SI 6H SIC HETEROJUNCTION//SI 6H SIC
2 5738 STRAINED SI1 XGEX SI QUANTUM WELLS//SEGREGANT ASSISTED GROWTH//SI BASED NANOSTRUCTURES
3 3619 SIGE//STRAINED SI//SILICON NANOSCI
4 7126 ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH
5 26620 ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS
6 7015 3C SIC//MONOMETHYLSILANE//FG NANOTECHNOL
7 13297 GERMANIUM CARBON//FELIX FREE ELE ON LASER IL//GERMANIUM CARBIDE
8 5225 SI100 SURFACE//SURFACE SCIENCE//SURFACTANT MEDIATED EPITAXY
9 5777 GESN//GERMANIUM TIN//L NESS
10 6615 HYDROGEN SURFACTANT//MANA SATELLITE//DISILANE

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