Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
17136 | 615 | 19.0 | 57% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1299 | 2 | SIGE//STRAINED SI//VIRTUAL SUBSTRATE | 8578 |
17136 | 1 | ARGON PLUS OXYGEN MIXTURE GAS//LATERAL CRYSTALLINE GROWTH//RUMENTAL FRONTIER | 615 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ARGON PLUS OXYGEN MIXTURE GAS | authKW | 198599 | 1% | 100% | 4 |
2 | LATERAL CRYSTALLINE GROWTH | authKW | 66198 | 0% | 67% | 2 |
3 | RUMENTAL FRONTIER | address | 66198 | 0% | 67% | 2 |
4 | ELECT TECHNOL EDUC | address | 66194 | 1% | 33% | 4 |
5 | BURIED INTERIACE | authKW | 49650 | 0% | 100% | 1 |
6 | CESIUM ION BEAMS | authKW | 49650 | 0% | 100% | 1 |
7 | CONTAMINANTS IN THE FILMS | authKW | 49650 | 0% | 100% | 1 |
8 | CRYSTALLINE SILICIUM LAYER | authKW | 49650 | 0% | 100% | 1 |
9 | CRYSTALLINE TO AMORPHOUS PHASE TRANSITION | authKW | 49650 | 0% | 100% | 1 |
10 | DELTA DOPED SILICON | authKW | 49650 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 6767 | 66% | 0% | 407 |
2 | Materials Science, Coatings & Films | 3894 | 18% | 0% | 113 |
3 | Physics, Condensed Matter | 1266 | 25% | 0% | 154 |
4 | Materials Science, Multidisciplinary | 604 | 24% | 0% | 149 |
5 | Crystallography | 505 | 8% | 0% | 51 |
6 | Instruments & Instrumentation | 268 | 7% | 0% | 45 |
7 | Nuclear Science & Technology | 176 | 6% | 0% | 35 |
8 | Physics, Nuclear | 116 | 5% | 0% | 30 |
9 | Nanoscience & Nanotechnology | 75 | 5% | 0% | 29 |
10 | Engineering, Electrical & Electronic | 60 | 8% | 0% | 52 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | RUMENTAL FRONTIER | 66198 | 0% | 67% | 2 |
2 | ELECT TECHNOL EDUC | 66194 | 1% | 33% | 4 |
3 | ELE INTELLIGENT SYST | 49650 | 0% | 100% | 1 |
4 | FREDEROCL SEITZ MAT | 49650 | 0% | 100% | 1 |
5 | GRP RECH ENGN MILIEUX IONISES | 49650 | 0% | 100% | 1 |
6 | INEP IVTAN ASSOC | 49650 | 0% | 100% | 1 |
7 | LOBACHEVSKI PHYSICOTECH | 49650 | 0% | 100% | 1 |
8 | NI LOBACHEVSKII PHYSICOTECH SCI | 49650 | 0% | 100% | 1 |
9 | SILIZIUM PHOTOVOLTAIK IONENSTRAHL | 49650 | 0% | 100% | 1 |
10 | MECH DESIGN SYST ENGN | 31913 | 0% | 21% | 3 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 4881 | 10% | 0% | 60 |
2 | KRISTALLOGRAFIYA | 4149 | 3% | 0% | 18 |
3 | CHEMICAL WEEK | 2915 | 0% | 2% | 3 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2913 | 5% | 0% | 29 |
5 | APPLIED PHYSICS LETTERS | 2676 | 13% | 0% | 78 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2301 | 5% | 0% | 28 |
7 | JOURNAL OF APPLIED PHYSICS | 1787 | 10% | 0% | 63 |
8 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1371 | 5% | 0% | 30 |
9 | JOURNAL OF CRYSTAL GROWTH | 1303 | 5% | 0% | 29 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1171 | 0% | 1% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GOSSMANN, HJ , SCHUBERT, EF , (1993) DELTA DOPING IN SILICON.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 18. ISSUE 1. P. 1 -67 | 76 | 41% | 61 |
2 | LEE, NE , XUE, G , GREENE, JE , (1996) EPITAXIAL SI(001) GROWN AT 80-750 DEGREES C BY ION-BEAM SPUTTER DEPOSITION: CRYSTAL GROWTH, DOPING, AND ELECTRONIC PROPERTIES.JOURNAL OF APPLIED PHYSICS. VOL. 80. ISSUE 2. P. 769-780 | 30 | 71% | 11 |
3 | YURASOV, DV , DROZDOV, MN , MUREL, AV , SHALEEV, MV , ZAKHAROV, ND , NOVIKOV, AV , (2011) USAGE OF ANTIMONY SEGREGATION FOR SELECTIVE DOPING OF SI IN MOLECULAR BEAM EPITAXY.JOURNAL OF APPLIED PHYSICS. VOL. 109. ISSUE 11. P. - | 19 | 66% | 2 |
4 | MARTON, D , BOYD, KJ , RABALAIS, JW , (1998) SYNERGETIC EFFECTS IN ION BEAM ENERGY AND SUBSTRATE TEMPERATURE DURING HYPERTHERMAL PARTICLE FILM DEPOSITION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 16. ISSUE 3. P. 1321-1326 | 20 | 74% | 15 |
5 | LEE, NE , (1999) SPATIAL ENERGY DISTRIBUTIONS OF SPUTTERED ATOMS AND REFLECTED PARTICLES DURING KR+ AND AR+ ION BEAM SPUTTERING OF SI AND GE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 38. ISSUE 12A. P. 6936 -6941 | 19 | 66% | 3 |
6 | REINIG, P , FENSKE, F , SELLE, B , BOHNE, W , ROHRICH, J , SIEBER, I , FUHS, W , (2004) LOW-TEMPERATURE SILICON HOMOEPITAXIAL GROWTH BY PULSED MAGNETRON SPUTTERING.APPLIED SURFACE SCIENCE. VOL. 227. ISSUE 1-4. P. 114-121 | 16 | 64% | 8 |
7 | FENSKE, F , GORKA, B , (2009) HIGHLY PHOSPHORUS-DOPED CRYSTALLINE SI LAYERS GROWN BY PULSE-MAGNETRON SPUTTER DEPOSITION.JOURNAL OF APPLIED PHYSICS. VOL. 105. ISSUE 7. P. - | 15 | 60% | 1 |
8 | MARKERT, LC , GREENE, JE , NI, WX , HANSSON, GV , SUNDGREN, JE , (1991) CONCENTRATION TRANSIENT ANALYSIS OF ANTIMONY SURFACE SEGREGATION DURING SI(001) MOLECULAR-BEAM EPITAXY.THIN SOLID FILMS. VOL. 206. ISSUE 1-2. P. 59-63 | 18 | 90% | 2 |
9 | GOSSMANN, HJ , SCHUBERT, EF , EAGLESHAM, DJ , CERULLO, M , (1990) LOW-TEMPERATURE SI MOLECULAR-BEAM EPITAXY - SOLUTION TO THE DOPING PROBLEM.APPLIED PHYSICS LETTERS. VOL. 57. ISSUE 23. P. 2440-2442 | 23 | 68% | 38 |
10 | GREENE, JE , LEE, NE , (1997) SI(001) EPITAXY FROM HYPERTHERMAL BEAMS: CRYSTAL GROWTH, DOPING, AND ELECTRONIC PROPERTIES.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 121. ISSUE 1-4. P. 58-64 | 16 | 76% | 5 |
Classes with closest relation at Level 1 |