Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
18266 | 559 | 22.6 | 61% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1299 | 2 | SIGE//STRAINED SI//VIRTUAL SUBSTRATE | 8578 |
18266 | 1 | CERAM PHYS//RIN//PIEZOSPECTROSCOPY | 559 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CERAM PHYS | address | 1070675 | 12% | 29% | 67 |
2 | RIN | address | 353939 | 3% | 36% | 18 |
3 | PIEZOSPECTROSCOPY | authKW | 264367 | 2% | 44% | 11 |
4 | PIEZO SPECTROSCOPY | authKW | 205634 | 1% | 47% | 8 |
5 | CONCENTRATED STRESS | authKW | 174795 | 1% | 80% | 4 |
6 | AIR GAP TFTS | authKW | 109248 | 0% | 100% | 2 |
7 | PIEZO SPECTROSCOPIC EFFECT | authKW | 109248 | 0% | 100% | 2 |
8 | MEASURED STRESS | authKW | 72830 | 0% | 67% | 2 |
9 | 3ME PME | address | 54624 | 0% | 100% | 1 |
10 | 4H SIC METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR MOSFET | authKW | 54624 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 4023 | 54% | 0% | 303 |
2 | Materials Science, Multidisciplinary | 646 | 26% | 0% | 145 |
3 | Materials Science, Ceramics | 634 | 7% | 0% | 39 |
4 | Physics, Condensed Matter | 431 | 16% | 0% | 91 |
5 | Instruments & Instrumentation | 318 | 8% | 0% | 46 |
6 | Materials Science, Characterization, Testing | 300 | 3% | 0% | 17 |
7 | Nanoscience & Nanotechnology | 239 | 8% | 0% | 44 |
8 | Spectroscopy | 167 | 5% | 0% | 30 |
9 | Engineering, Electrical & Electronic | 137 | 12% | 0% | 65 |
10 | Materials Science, Coatings & Films | 117 | 4% | 0% | 21 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CERAM PHYS | 1070675 | 12% | 29% | 67 |
2 | RIN | 353939 | 3% | 36% | 18 |
3 | 3ME PME | 54624 | 0% | 100% | 1 |
4 | AGCY ENERGY | 54624 | 0% | 100% | 1 |
5 | BUBAL EUB | 54624 | 0% | 100% | 1 |
6 | ELECT OPTOELECT GRP | 54624 | 0% | 100% | 1 |
7 | ENERGY PHOTOVOLTA IKF 5 | 54624 | 0% | 100% | 1 |
8 | EQUIPE MIXTECNRS NANOPHYS SEMICOND | 54624 | 0% | 100% | 1 |
9 | EXCELLENCE NONOMAT NANOTRUCT SUR ES | 54624 | 0% | 100% | 1 |
10 | GAS SENSING TECHNOL CORP | 54624 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF APPLIED PHYSICS | 4206 | 16% | 0% | 91 |
2 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 4192 | 2% | 1% | 10 |
3 | JAPANESE JOURNAL OF APPLIED PHYSICS | 1492 | 4% | 0% | 21 |
4 | APPLIED PHYSICS LETTERS | 1440 | 10% | 0% | 55 |
5 | ECS SOLID STATE LETTERS | 1363 | 1% | 1% | 3 |
6 | JOURNAL OF RAMAN SPECTROSCOPY | 1344 | 2% | 0% | 12 |
7 | JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 814 | 3% | 0% | 17 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 812 | 2% | 0% | 11 |
9 | APPLIED SPECTROSCOPY | 789 | 2% | 0% | 11 |
10 | SOVIET MICROELECTRONICS | 727 | 0% | 1% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | KOSEMURA, D , TOMITA, M , USUDA, K , OGURA, A , (2012) EVALUATION OF ANISOTROPIC STRAIN RELAXATION IN STRAINED SILICON-ON-INSULATOR NANOSTRUCTURE BY OIL-IMMERSION RAMAN SPECTROSCOPY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 2. P. - | 28 | 68% | 5 |
2 | NDONG, G , PICARDI, G , LICITRA, C , ROUCHON, D , EYMERY, J , OSSIKOVSKI, R , (2013) DETERMINATION OF THE BIAXIAL STRESS IN STRAINED SILICON NANO-STRIPES THROUGH POLARIZED OBLIQUE INCIDENCE RAMAN SPECTROSCOPY.JOURNAL OF APPLIED PHYSICS. VOL. 114. ISSUE 16. P. - | 22 | 81% | 1 |
3 | TOMITA, M , NAGASAKA, M , KOSEMURA, D , USUDA, K , TEZUKA, T , OGURA, A , (2013) TENSOR EVALUATION OF ANISOTROPIC STRESS RELAXATION IN MESA-SHAPED SIGE LAYER ON SI SUBSTRATE BY ELECTRON BACK-SCATTERING PATTERN MEASUREMENT: COMPARISON BETWEEN RAMAN MEASUREMENT AND FINITE ELEMENT METHOD SIMULATION.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 52. ISSUE 4. P. - | 22 | 73% | 0 |
4 | PEZZOTTI, G , ZHU, WL , (2015) RESOLVING STRESS TENSOR COMPONENTS IN SPACE FROM POLARIZED RAMAN SPECTRA: POLYCRYSTALLINE ALUMINA.PHYSICAL CHEMISTRY CHEMICAL PHYSICS. VOL. 17. ISSUE 4. P. 2608 -2627 | 21 | 66% | 5 |
5 | KOSEMURA, D , OGURA, A , (2011) QUANTITATIVE ANALYSIS OF STRESS RELAXATION IN TRANSMISSION ELECTRON MICROSCOPY SAMPLES BY RAMAN SPECTROSCOPY WITH A HIGH-NUMERICAL APERTURE LENS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 4. P. - | 18 | 90% | 4 |
6 | POBORCHII, V , TADA, T , USUDA, K , KANAYAMA, T , (2011) POLARIZED RAMAN MICROSCOPY OF ANISOTROPIC STRESS RELAXATION IN STRAINED-SI-ON-INSULATOR STRIPES.APPLIED PHYSICS LETTERS. VOL. 99. ISSUE 19. P. - | 14 | 100% | 7 |
7 | ZHU, WL , PEZZOTTI, G , (2011) PHONON DEFORMATION POTENTIALS FOR THE CORUNDUM STRUCTURE OF SAPPHIRE.JOURNAL OF RAMAN SPECTROSCOPY. VOL. 42. ISSUE 11. P. 2015-2025 | 20 | 67% | 6 |
8 | MYERS, GA , MICHAELS, CA , COOK, RF , (2016) QUANTITATIVE MAPPING OF STRESS HETEROGENEITY IN POLYCRYSTALLINE ALUMINA USING HYPERSPECTRAL FLUORESCENCE MICROSCOPY.ACTA MATERIALIA. VOL. 106. ISSUE . P. 272 -282 | 23 | 47% | 0 |
9 | OGURA, A , KOSEMURA, D , TAKEI, M , UCHIDA, H , HATTORI, N , YOSHIMARU, M , MAYUZUMI, S , WAKABAYASHI, H , (2009) EVALUATION OF LOCAL STRAIN IN SI USING UV-RAMAN SPECTROSCOPY.MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. VOL. 159-60. ISSUE . P. 206-211 | 16 | 76% | 7 |
10 | KOSEMURA, D , YAMAMOTO, S , TAKEUCHI, K , USUDA, K , OGURA, A , (2016) EXAMINATION OF PHONON DEFORMATION POTENTIALS FOR ACCURATE STRAIN MEASUREMENTS IN SILICON-GERMANIUM ALLOYS WITH THE WHOLE COMPOSITION RANGE BY RAMAN SPECTROSCOPY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 2. P. - | 21 | 49% | 0 |
Classes with closest relation at Level 1 |