Class information for:
Level 1: SIGE//STRAINED SI//SILICON NANOSCI

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
3619 1944 19.7 73%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1299 2             SIGE//STRAINED SI//VIRTUAL SUBSTRATE 8578
3619 1                   SIGE//STRAINED SI//SILICON NANOSCI 1944

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SIGE authKW 694053 12% 19% 235
2 STRAINED SI authKW 511842 5% 37% 89
3 SILICON NANOSCI address 323424 2% 47% 44
4 VIRTUAL SUBSTRATE authKW 316707 2% 61% 33
5 STRAINED SILICON authKW 277438 3% 30% 59
6 SGOI authKW 277042 1% 84% 21
7 SIGE ON INSULATOR authKW 273138 1% 87% 20
8 STRAIN RELAXATION authKW 254465 4% 23% 71
9 CRYSTAL SCI TECHNOL address 217710 3% 27% 52
10 GE CONDENSATION authKW 203536 1% 72% 18

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 23238 69% 0% 1338
2 Physics, Condensed Matter 8597 36% 0% 691
3 Materials Science, Coatings & Films 6590 14% 0% 264
4 Engineering, Electrical & Electronic 4844 30% 0% 592
5 Materials Science, Multidisciplinary 2806 28% 0% 554
6 Nanoscience & Nanotechnology 507 6% 0% 124
7 Crystallography 363 4% 0% 84
8 Microscopy 83 1% 0% 16
9 Physics, Multidisciplinary 57 4% 0% 84
10 Electrochemistry 26 2% 0% 32

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SILICON NANOSCI 323424 2% 47% 44
2 CRYSTAL SCI TECHNOL 217710 3% 27% 52
3 ADV S 178183 2% 24% 48
4 HALBLEITERTECH 40452 2% 8% 32
5 SEMICOND FUNCT FILM ENGN TECHNOL 37991 1% 22% 11
6 ULM 36510 1% 23% 10
7 SILICON NANO SCI 35895 0% 57% 4
8 ELECT ECE 33157 1% 16% 13
9 ELECT ENGN MAT ELECT DEVICES 31411 0% 100% 2
10 MOBILE DISPLAY RD TEAM 31411 0% 100% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 17698 5% 1% 95
2 SOLID-STATE ELECTRONICS 14886 5% 1% 97
3 APPLIED PHYSICS LETTERS 13083 16% 0% 305
4 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 10924 2% 1% 48
5 THIN SOLID FILMS 10116 8% 0% 154
6 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 6146 3% 1% 54
7 JOURNAL OF APPLIED PHYSICS 4795 9% 0% 184
8 IEEE TRANSACTIONS ON ELECTRON DEVICES 4680 3% 0% 68
9 IEEE ELECTRON DEVICE LETTERS 4458 3% 1% 51
10 JOURNAL OF CRYSTAL GROWTH 2959 4% 0% 78

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SIGE 694053 12% 19% 235 Search SIGE Search SIGE
2 STRAINED SI 511842 5% 37% 89 Search STRAINED+SI Search STRAINED+SI
3 VIRTUAL SUBSTRATE 316707 2% 61% 33 Search VIRTUAL+SUBSTRATE Search VIRTUAL+SUBSTRATE
4 STRAINED SILICON 277438 3% 30% 59 Search STRAINED+SILICON Search STRAINED+SILICON
5 SGOI 277042 1% 84% 21 Search SGOI Search SGOI
6 SIGE ON INSULATOR 273138 1% 87% 20 Search SIGE+ON+INSULATOR Search SIGE+ON+INSULATOR
7 STRAIN RELAXATION 254465 4% 23% 71 Search STRAIN+RELAXATION Search STRAIN+RELAXATION
8 GE CONDENSATION 203536 1% 72% 18 Search GE+CONDENSATION Search GE+CONDENSATION
9 SILICON GERMANIUM 128619 3% 13% 62 Search SILICON+GERMANIUM Search SILICON+GERMANIUM
10 GERMANIUM SILICON ALLOYS 83859 1% 21% 25 Search GERMANIUM+SILICON+ALLOYS Search GERMANIUM+SILICON+ALLOYS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 LEE, ML , FITZGERALD, EA , BULSARA, MT , CURRIE, MT , LOCHTEFELD, A , (2005) STRAINED SI, SIGE, AND GE CHANNELS FOR HIGH-MOBILITY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 1. P. - 70 66% 509
2 BOLKHOVITYANOV, YB , PCHELYAKOV, OP , SOKOLOV, LV , CHIKICHEV, SI , (2003) ARTIFICIAL GESI SUBSTRATES FOR HETEROEPITAXY: ACHIEVEMENTS AND PROBLEMS.SEMICONDUCTORS. VOL. 37. ISSUE 5. P. 493-518 97 64% 24
3 IZYUMSKAYA, NF , AVRUTIN, VS , VYATKIN, AF , (2004) CONTROL OVER STRAIN RELAXATION IN SI-BASED HETEROSTRUCTURES.SOLID-STATE ELECTRONICS. VOL. 48. ISSUE 8. P. 1265-1278 59 71% 6
4 AYERS, JE , (2008) COMPLIANT SUBSTRATES FOR HETEROEPITAXIAL SEMICONDUCTOR DEVICES: THEORY, EXPERIMENT, AND CURRENT DIRECTIONS.JOURNAL OF ELECTRONIC MATERIALS. VOL. 37. ISSUE 10. P. 1511-1523 36 88% 9
5 CURRIE, MT , LEITZ, CW , LANGDO, TA , TARASCHI, G , FITZGERALD, EA , ANTONIADIS, DA , (2001) CARRIER MOBILITIES AND PROCESS STABILITY OF STRAINED SI N- AND P-MOSFETS ON SIGE VIRTUAL SUBSTRATES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 19. ISSUE 6. P. 2268-2279 33 85% 178
6 SCHAFFLER, F , (1997) HIGH-MOBILITY SI AND GE STRUCTURES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 12. ISSUE 12. P. 1515-1549 49 47% 548
7 MAITI, CK , BERA, LK , CHATTOPADHYAY, S , (1998) STRAINED-SI HETEROSTRUCTURE FIELD EFFECT TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 13. ISSUE 11. P. 1225 -1246 55 62% 73
8 PAUL, DJ , (2004) SI/SIGE HETEROSTRUCTURES: FROM MATERIAL AND PHYSICS TO DEVICES AND CIRCUITS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 19. ISSUE 10. P. R75 -R108 55 39% 284
9 WHALL, TE , PARKER, EHC , (1998) SIGE HETEROSTRUCTURES FOR FET APPLICATIONS.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 31. ISSUE 12. P. 1397 -1416 50 68% 50
10 SHAH, VA , DOBBIE, A , MYRONOV, M , LEADLEY, DR , (2010) REVERSE GRADED SIGE/GE/SI BUFFERS FOR HIGH-COMPOSITION VIRTUAL SUBSTRATES.JOURNAL OF APPLIED PHYSICS. VOL. 107. ISSUE 6. P. - 31 74% 26

Classes with closest relation at Level 1


Rank Class id link
1 5738 STRAINED SI1 XGEX SI QUANTUM WELLS//SEGREGANT ASSISTED GROWTH//SI BASED NANOSTRUCTURES
2 8164 MISFIT DISLOCATION//ULTRAHIGH FREQUENCY SEMICOND ELECT//METAMORPHIC BUFFER
3 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
4 15875 SIGEC//SI1 YCY//SI1 X YGEXCY
5 5777 GESN//GERMANIUM TIN//L NESS
6 18266 CERAM PHYS//RIN//PIEZOSPECTROSCOPY
7 7126 ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH
8 21723 LAUE LENS//QUASI MOSAICITY//GERMANIUM SILICON ALLOYS
9 9326 GERMANIUM//MBE//GE MOS
10 24736 1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS

Go to start page