Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 31535 | 151 | 14.4 | 36% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 1210 | 2 | GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY | 9166 |
| 31535 | 1 | FIELD INDUCED JUNCTION//INSB GATE CONTROLLED DIODE//PIXEL LINEARITY | 151 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | FIELD INDUCED JUNCTION | authKW | 202222 | 1% | 100% | 1 |
| 2 | INSB GATE CONTROLLED DIODE | authKW | 202222 | 1% | 100% | 1 |
| 3 | PIXEL LINEARITY | authKW | 202222 | 1% | 100% | 1 |
| 4 | CHARGE INJECTION DEVICE CID | authKW | 50554 | 1% | 25% | 1 |
| 5 | LAVOISIER IREM | address | 40443 | 1% | 20% | 1 |
| 6 | PECVD METHOD | authKW | 22467 | 1% | 11% | 1 |
| 7 | SURFACE LEAKAGE CURRENT | authKW | 14443 | 1% | 7% | 1 |
| 8 | ACTIVE PIXEL | authKW | 13480 | 1% | 7% | 1 |
| 9 | INSB | authKW | 11466 | 3% | 1% | 4 |
| 10 | PHYSICOCHEM PROBLEMS CERAM SCI | address | 11233 | 1% | 6% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 1269 | 58% | 0% | 88 |
| 2 | Materials Science, Coatings & Films | 390 | 12% | 0% | 18 |
| 3 | Engineering, Electrical & Electronic | 324 | 28% | 0% | 43 |
| 4 | Physics, Condensed Matter | 262 | 23% | 0% | 35 |
| 5 | Materials Science, Multidisciplinary | 115 | 22% | 0% | 33 |
| 6 | Spectroscopy | 44 | 5% | 0% | 8 |
| 7 | Optics | 30 | 7% | 0% | 11 |
| 8 | Electrochemistry | 15 | 3% | 0% | 5 |
| 9 | Instruments & Instrumentation | 15 | 4% | 0% | 6 |
| 10 | Nanoscience & Nanotechnology | 12 | 4% | 0% | 6 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | LAVOISIER IREM | 40443 | 1% | 20% | 1 |
| 2 | PHYSICOCHEM PROBLEMS CERAM SCI | 11233 | 1% | 6% | 1 |
| 3 | ENERGY SEMICOND | 3284 | 1% | 1% | 2 |
| 4 | SOLID STATE PHYS MICROELECT | 3158 | 1% | 2% | 1 |
| 5 | LKO | 2659 | 1% | 1% | 1 |
| 6 | FAK ELEKTROTECH | 2591 | 1% | 1% | 1 |
| 7 | INGN MET MAT | 2377 | 1% | 1% | 1 |
| 8 | VANT HOFF | 2083 | 1% | 1% | 1 |
| 9 | ADV CONVERGENCE TECHNOL | 1913 | 1% | 0% | 2 |
| 10 | COUNCIL CANADA | 1079 | 1% | 1% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET MICROELECTRONICS | 6081 | 2% | 1% | 3 |
| 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 3400 | 11% | 0% | 16 |
| 3 | IZVESTIYA SIBIRSKOGO OTDELENIYA AKADEMII NAUK SSSR SERIYA KHIMICHESKIKH NAUK | 2977 | 3% | 0% | 4 |
| 4 | FUNKTIONELLE BIOLOGIE & MEDIZIN | 2020 | 1% | 1% | 1 |
| 5 | UKRAINSKII FIZICHESKII ZHURNAL | 1530 | 3% | 0% | 5 |
| 6 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1440 | 1% | 0% | 2 |
| 7 | PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS | 1346 | 4% | 0% | 6 |
| 8 | THIN SOLID FILMS | 1243 | 10% | 0% | 15 |
| 9 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1070 | 5% | 0% | 8 |
| 10 | SOVIET ELECTROCHEMISTRY | 814 | 2% | 0% | 3 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | FIELD INDUCED JUNCTION | 202222 | 1% | 100% | 1 | Search FIELD+INDUCED+JUNCTION | Search FIELD+INDUCED+JUNCTION |
| 2 | INSB GATE CONTROLLED DIODE | 202222 | 1% | 100% | 1 | Search INSB+GATE+CONTROLLED+DIODE | Search INSB+GATE+CONTROLLED+DIODE |
| 3 | PIXEL LINEARITY | 202222 | 1% | 100% | 1 | Search PIXEL+LINEARITY | Search PIXEL+LINEARITY |
| 4 | CHARGE INJECTION DEVICE CID | 50554 | 1% | 25% | 1 | Search CHARGE+INJECTION+DEVICE+CID | Search CHARGE+INJECTION+DEVICE+CID |
| 5 | PECVD METHOD | 22467 | 1% | 11% | 1 | Search PECVD+METHOD | Search PECVD+METHOD |
| 6 | SURFACE LEAKAGE CURRENT | 14443 | 1% | 7% | 1 | Search SURFACE+LEAKAGE+CURRENT | Search SURFACE+LEAKAGE+CURRENT |
| 7 | ACTIVE PIXEL | 13480 | 1% | 7% | 1 | Search ACTIVE+PIXEL | Search ACTIVE+PIXEL |
| 8 | INSB | 11466 | 3% | 1% | 4 | Search INSB | Search INSB |
| 9 | STATE DENSITY | 9628 | 1% | 5% | 1 | Search STATE+DENSITY | Search STATE+DENSITY |
| 10 | INDIUM ANTIMONIDE | 7092 | 1% | 2% | 2 | Search INDIUM+ANTIMONIDE | Search INDIUM+ANTIMONIDE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | LEE, J , PARK, S , KIM, J , YANG, C , KIM, S , SEOK, C , PARK, J , YOON, E , (2012) COMPARATIVE ANALYSIS OF OXIDE PHASE FORMATION AND ITS EFFECTS ON ELECTRICAL PROPERTIES OF SIO2/INSB METAL-OXIDE-SEMICONDUCTOR STRUCTURES.THIN SOLID FILMS. VOL. 520. ISSUE 16. P. 5382-5385 | 15 | 83% | 2 |
| 2 | SUN, TP , LEE, SC , LIU, KC , PANG, YM , YANG, SJ , (1990) HIGH-PERFORMANCE METAL/SIO2/INSB CAPACITOR FABRICATED BY PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 7. P. 3701-3706 | 15 | 100% | 2 |
| 3 | TAKAHASHI, K , ONOZUKA, A , TANAKA, Y , (1996) CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 35. ISSUE 1A. P. 61-66 | 11 | 100% | 2 |
| 4 | SUN, TP , LEE, SC , YANG, SJ , (1990) THE CURRENT LEAKAGE MECHANISM IN INSB P+N DIODES.JOURNAL OF APPLIED PHYSICS. VOL. 67. ISSUE 11. P. 7092 -7097 | 15 | 88% | 0 |
| 5 | SU, YK , LIAW, UH , (1994) STUDY OF INDIUM-ANTIMONIDE METAL-OXIDE-SEMICONDUCTOR STRUCTURE PREPARED BY DIRECT PHOTOCHEMICAL-VAPOR DEPOSITION.JOURNAL OF APPLIED PHYSICS. VOL. 76. ISSUE 8. P. 4719-4723 | 11 | 92% | 4 |
| 6 | PARK, S , CHOI, D , PARK, H , MOON, D , YOON, E , PARK, Y , BAE, DK , (2016) SUPPRESSION OF SURFACE LEAKAGE CURRENT IN INSB PHOTODIODE BY ZNS PASSIVATION.INTERNATIONAL JOURNAL OF NANOTECHNOLOGY. VOL. 13. ISSUE 4-6. P. 392 -401 | 11 | 46% | 0 |
| 7 | SUN, TP , LEE, SC , YANG, SJ , (1989) THE ELECTRICAL CHARACTERISTICS OF METAL SIO2/INSB CAPACITOR FABRICATED BY PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 7. ISSUE 5. P. 1115-1121 | 10 | 100% | 6 |
| 8 | LEE, JG , CHOI, SY , PARK, SJ , (1997) CHARACTERISTICS OF AN INDIUM ANTIMONIDE METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PREPARED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION.JOURNAL OF APPLIED PHYSICS. VOL. 82. ISSUE 8. P. 3917-3921 | 8 | 80% | 7 |
| 9 | CHEN, CW , LILE, DL , (1989) ANODIC OXIDE METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON N-TYPE INSB.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 7. ISSUE 5. P. 1122-1125 | 9 | 90% | 0 |
| 10 | BAIKO, DA , SWAB, JM , (2005) LINEARITY OF ACTIVE PIXEL CHARGE INJECTION DEVICES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 52. ISSUE 8. P. 1923-1926 | 5 | 83% | 1 |
Classes with closest relation at Level 1 |