Class information for:
Level 1: CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
10794 1034 17.2 54%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
1210 2             GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY 9166
10794 1                   CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE 1034

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 CONDUCTANCE TRANSIENTS authKW 123039 0% 83% 5
2 INDIUM PHOSPHIDE100 authKW 118119 0% 100% 4
3 INSULATOR DAMAGE authKW 94494 0% 80% 4
4 INDIUM PHOSPHIDE authKW 68576 3% 7% 35
5 INPO4 authKW 66440 0% 75% 3
6 FIS LICADA ELECT ELE ON 3 address 59059 0% 100% 2
7 INTERACTION IONS MATTER authKW 59059 0% 100% 2
8 LMCDD address 59059 0% 100% 2
9 SIMULATION METHOD TRIM authKW 59059 0% 100% 2
10 MICROELECT PL address 47823 1% 18% 9

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Applied 9776 62% 0% 637
2 Materials Science, Coatings & Films 6906 19% 0% 195
3 Physics, Condensed Matter 1917 24% 0% 247
4 Engineering, Electrical & Electronic 1780 26% 0% 267
5 Materials Science, Multidisciplinary 690 21% 0% 214
6 Electrochemistry 666 7% 0% 76
7 Nanoscience & Nanotechnology 189 6% 0% 57
8 Physics, Multidisciplinary 31 4% 0% 45
9 Chemistry, Physical 23 7% 0% 69
10 Microscopy 12 0% 0% 5

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 FIS LICADA ELECT ELE ON 3 59059 0% 100% 2
2 LMCDD 59059 0% 100% 2
3 MICROELECT PL 47823 1% 18% 9
4 FIS LICADA ELECT ELECT 3 43474 1% 16% 9
5 LICM 37090 1% 18% 7
6 SCI MAT ELECT AUTOMAT 33205 1% 13% 9
7 AL HIJAWI ENGN TECHNOL 29530 0% 100% 1
8 ASISTENCIA INVEST IMPLANTAC ION 29530 0% 100% 1
9 ELECT ENGNELECT DEVICES GRP 29530 0% 100% 1
10 ELECT PHYS INTER ES 29530 0% 100% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 5596 1% 1% 15
2 SOLID-STATE ELECTRONICS 3833 3% 0% 36
3 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 3827 6% 0% 63
4 REVUE DE PHYSIQUE APPLIQUEE 3769 1% 1% 13
5 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 3692 4% 0% 46
6 ELECTRON DEVICE LETTERS 3520 1% 2% 6
7 JOURNAL OF APPLIED PHYSICS 2667 10% 0% 100
8 THIN SOLID FILMS 2572 6% 0% 57
9 VIDE-SCIENCE TECHNIQUE ET APPLICATIONS 2198 1% 1% 6
10 IEEE ELECTRON DEVICE LETTERS 2176 3% 0% 26

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 CONDUCTANCE TRANSIENTS 123039 0% 83% 5 Search CONDUCTANCE+TRANSIENTS Search CONDUCTANCE+TRANSIENTS
2 INDIUM PHOSPHIDE100 118119 0% 100% 4 Search INDIUM+PHOSPHIDE100 Search INDIUM+PHOSPHIDE100
3 INSULATOR DAMAGE 94494 0% 80% 4 Search INSULATOR+DAMAGE Search INSULATOR+DAMAGE
4 INDIUM PHOSPHIDE 68576 3% 7% 35 Search INDIUM+PHOSPHIDE Search INDIUM+PHOSPHIDE
5 INPO4 66440 0% 75% 3 Search INPO4 Search INPO4
6 INTERACTION IONS MATTER 59059 0% 100% 2 Search INTERACTION+IONS+MATTER Search INTERACTION+IONS+MATTER
7 SIMULATION METHOD TRIM 59059 0% 100% 2 Search SIMULATION+METHOD+TRIM Search SIMULATION+METHOD+TRIM
8 INP 37964 4% 3% 40 Search INP Search INP
9 AES XPS TEM 29530 0% 100% 1 Search AES+XPS+TEM Search AES+XPS+TEM
10 AL CONTAINING OXIDES 29530 0% 100% 1 Search AL+CONTAINING+OXIDES Search AL+CONTAINING+OXIDES

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 QUAN, DT , HBIB, H , (1993) HIGH BARRIER HEIGHT AU/N-TYPE INP SCHOTTKY CONTACTS WITH A POXNYHZ INTERFACIAL LAYER.SOLID-STATE ELECTRONICS. VOL. 36. ISSUE 3. P. 339-344 29 85% 57
2 HBIB, H , BONNAUD, O , FORTIN, B , (1997) ELECTRICAL CHARACTERISTICS OF (N)-INP MIS DIODES WITH A POXNY INTERFACIAL LAYER DEPOSITED AT LOW TEMPERATURE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 12. ISSUE 5. P. 609-613 23 96% 2
3 REDONDO, E , MARTIL, I , GONZALEZ-DIAZ, G , CASTAN, H , DUENAS, S , (2001) INFLUENCE OF ELECTRON CYCLOTRON RESONANCE NITROGEN PLASMA EXPOSURE ON THE ELECTRICAL CHARACTERISTICS OF SINX : H/INP STRUCTURES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 19. ISSUE 1. P. 186-191 19 86% 5
4 HBIB, H , BONNAUD, O , GAUNEAU, M , HAMEDI, L , MARCHAND, R , QUEMERAIS, A , (1997) CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES.THIN SOLID FILMS. VOL. 310. ISSUE 1-2. P. 1-7 24 73% 1
5 CETIN, H , AYYILDIZ, E , (2007) ELECTRICAL CHARACTERISTICS OF AU, AL, CU/N-INP SCHOTTKY CONTACTS FORMED ON CHEMICALLY CLEANED AND AIR-EXPOSED N-INP SURFACE.PHYSICA B-CONDENSED MATTER. VOL. 394. ISSUE 1. P. 93 -99 17 71% 16
6 CETIN, H , AYYILDIZ, E , (2007) THE ELECTRICAL PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR DEVICES FABRICATED ON THE CHEMICALLY ETCHED N-INP SUBSTRATE.APPLIED SURFACE SCIENCE. VOL. 253. ISSUE 14. P. 5961-5966 18 60% 19
7 HATTORI, K , TORII, Y , (1991) ELECTRICAL-PROPERTIES OF INPXOY-INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 69. ISSUE 5. P. 3130-3134 20 95% 22
8 MUI, DSL , WANG, Z , MORKOC, H , (1993) A REVIEW OF III-V-SEMICONDUCTOR BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES AND DEVICES.THIN SOLID FILMS. VOL. 231. ISSUE 1-2. P. 107-124 31 53% 34
9 BERROUACHEDI, N , BOUSLAMA, M , ABDELLAOUI, A , GHAFFOUR, M , JARDIN, C , HAMAIDA, K , MONTEIL, Y , LOUNIS, Z , OUERDANE, A , (2009) INVESTIGATION BY EELS AND TRIM SIMULATION METHOD OF THE INTERACTION OF AR+ AND N+ IONS WITH THE INP COMPOUND.APPLIED SURFACE SCIENCE. VOL. 256. ISSUE 1. P. 21 -26 14 70% 2
10 AL-REFAIE, SN , (1999) ACTIVE EQUIVALENT NETWORK FOR STATES AT THE AL/INPO4 INTERFACE.SOLID-STATE ELECTRONICS. VOL. 43. ISSUE 2. P. 325 -334 13 100% 1

Classes with closest relation at Level 1



Rank Class id link
1 32503 CARBON DIOXIDE SHG//FT IR PL SPECTROSCOPY//INTERACTION WITH SUBSTRATE
2 31535 FIELD INDUCED JUNCTION//INSB GATE CONTROLLED DIODE//PIXEL LINEARITY
3 8029 SULFUR PASSIVATION//INTERFACE CONTROL LAYER//NH42S X TREATMENT
4 13299 ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS
5 14548 SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S
6 6482 III V MOSFET//GAAS MOSFET//INGAAS
7 25406 MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON
8 24686 LOW TEMPERATURE SILICON OXIDATION//DIRECTIONAL OXIDATION//HIGH RATE SILICON OXIDATION
9 25791 TEXTURED INTERFACE//MICRORELIEF INTERFACE//BEIJING CONDENSD MATTER PHYS
10 2724 SERIES RESISTANCE//IDEALITY FACTOR//SCHOTTKY DIODE

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