Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
10794 | 1034 | 17.2 | 54% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
1210 | 2 | GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY | 9166 |
10794 | 1 | CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE | 1034 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CONDUCTANCE TRANSIENTS | authKW | 123039 | 0% | 83% | 5 |
2 | INDIUM PHOSPHIDE100 | authKW | 118119 | 0% | 100% | 4 |
3 | INSULATOR DAMAGE | authKW | 94494 | 0% | 80% | 4 |
4 | INDIUM PHOSPHIDE | authKW | 68576 | 3% | 7% | 35 |
5 | INPO4 | authKW | 66440 | 0% | 75% | 3 |
6 | FIS LICADA ELECT ELE ON 3 | address | 59059 | 0% | 100% | 2 |
7 | INTERACTION IONS MATTER | authKW | 59059 | 0% | 100% | 2 |
8 | LMCDD | address | 59059 | 0% | 100% | 2 |
9 | SIMULATION METHOD TRIM | authKW | 59059 | 0% | 100% | 2 |
10 | MICROELECT PL | address | 47823 | 1% | 18% | 9 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 9776 | 62% | 0% | 637 |
2 | Materials Science, Coatings & Films | 6906 | 19% | 0% | 195 |
3 | Physics, Condensed Matter | 1917 | 24% | 0% | 247 |
4 | Engineering, Electrical & Electronic | 1780 | 26% | 0% | 267 |
5 | Materials Science, Multidisciplinary | 690 | 21% | 0% | 214 |
6 | Electrochemistry | 666 | 7% | 0% | 76 |
7 | Nanoscience & Nanotechnology | 189 | 6% | 0% | 57 |
8 | Physics, Multidisciplinary | 31 | 4% | 0% | 45 |
9 | Chemistry, Physical | 23 | 7% | 0% | 69 |
10 | Microscopy | 12 | 0% | 0% | 5 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FIS LICADA ELECT ELE ON 3 | 59059 | 0% | 100% | 2 |
2 | LMCDD | 59059 | 0% | 100% | 2 |
3 | MICROELECT PL | 47823 | 1% | 18% | 9 |
4 | FIS LICADA ELECT ELECT 3 | 43474 | 1% | 16% | 9 |
5 | LICM | 37090 | 1% | 18% | 7 |
6 | SCI MAT ELECT AUTOMAT | 33205 | 1% | 13% | 9 |
7 | AL HIJAWI ENGN TECHNOL | 29530 | 0% | 100% | 1 |
8 | ASISTENCIA INVEST IMPLANTAC ION | 29530 | 0% | 100% | 1 |
9 | ELECT ENGNELECT DEVICES GRP | 29530 | 0% | 100% | 1 |
10 | ELECT PHYS INTER ES | 29530 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 5596 | 1% | 1% | 15 |
2 | SOLID-STATE ELECTRONICS | 3833 | 3% | 0% | 36 |
3 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 3827 | 6% | 0% | 63 |
4 | REVUE DE PHYSIQUE APPLIQUEE | 3769 | 1% | 1% | 13 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 3692 | 4% | 0% | 46 |
6 | ELECTRON DEVICE LETTERS | 3520 | 1% | 2% | 6 |
7 | JOURNAL OF APPLIED PHYSICS | 2667 | 10% | 0% | 100 |
8 | THIN SOLID FILMS | 2572 | 6% | 0% | 57 |
9 | VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 2198 | 1% | 1% | 6 |
10 | IEEE ELECTRON DEVICE LETTERS | 2176 | 3% | 0% | 26 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | CONDUCTANCE TRANSIENTS | 123039 | 0% | 83% | 5 | Search CONDUCTANCE+TRANSIENTS | Search CONDUCTANCE+TRANSIENTS |
2 | INDIUM PHOSPHIDE100 | 118119 | 0% | 100% | 4 | Search INDIUM+PHOSPHIDE100 | Search INDIUM+PHOSPHIDE100 |
3 | INSULATOR DAMAGE | 94494 | 0% | 80% | 4 | Search INSULATOR+DAMAGE | Search INSULATOR+DAMAGE |
4 | INDIUM PHOSPHIDE | 68576 | 3% | 7% | 35 | Search INDIUM+PHOSPHIDE | Search INDIUM+PHOSPHIDE |
5 | INPO4 | 66440 | 0% | 75% | 3 | Search INPO4 | Search INPO4 |
6 | INTERACTION IONS MATTER | 59059 | 0% | 100% | 2 | Search INTERACTION+IONS+MATTER | Search INTERACTION+IONS+MATTER |
7 | SIMULATION METHOD TRIM | 59059 | 0% | 100% | 2 | Search SIMULATION+METHOD+TRIM | Search SIMULATION+METHOD+TRIM |
8 | INP | 37964 | 4% | 3% | 40 | Search INP | Search INP |
9 | AES XPS TEM | 29530 | 0% | 100% | 1 | Search AES+XPS+TEM | Search AES+XPS+TEM |
10 | AL CONTAINING OXIDES | 29530 | 0% | 100% | 1 | Search AL+CONTAINING+OXIDES | Search AL+CONTAINING+OXIDES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | QUAN, DT , HBIB, H , (1993) HIGH BARRIER HEIGHT AU/N-TYPE INP SCHOTTKY CONTACTS WITH A POXNYHZ INTERFACIAL LAYER.SOLID-STATE ELECTRONICS. VOL. 36. ISSUE 3. P. 339-344 | 29 | 85% | 57 |
2 | HBIB, H , BONNAUD, O , FORTIN, B , (1997) ELECTRICAL CHARACTERISTICS OF (N)-INP MIS DIODES WITH A POXNY INTERFACIAL LAYER DEPOSITED AT LOW TEMPERATURE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 12. ISSUE 5. P. 609-613 | 23 | 96% | 2 |
3 | REDONDO, E , MARTIL, I , GONZALEZ-DIAZ, G , CASTAN, H , DUENAS, S , (2001) INFLUENCE OF ELECTRON CYCLOTRON RESONANCE NITROGEN PLASMA EXPOSURE ON THE ELECTRICAL CHARACTERISTICS OF SINX : H/INP STRUCTURES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 19. ISSUE 1. P. 186-191 | 19 | 86% | 5 |
4 | HBIB, H , BONNAUD, O , GAUNEAU, M , HAMEDI, L , MARCHAND, R , QUEMERAIS, A , (1997) CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES.THIN SOLID FILMS. VOL. 310. ISSUE 1-2. P. 1-7 | 24 | 73% | 1 |
5 | CETIN, H , AYYILDIZ, E , (2007) ELECTRICAL CHARACTERISTICS OF AU, AL, CU/N-INP SCHOTTKY CONTACTS FORMED ON CHEMICALLY CLEANED AND AIR-EXPOSED N-INP SURFACE.PHYSICA B-CONDENSED MATTER. VOL. 394. ISSUE 1. P. 93 -99 | 17 | 71% | 16 |
6 | CETIN, H , AYYILDIZ, E , (2007) THE ELECTRICAL PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR DEVICES FABRICATED ON THE CHEMICALLY ETCHED N-INP SUBSTRATE.APPLIED SURFACE SCIENCE. VOL. 253. ISSUE 14. P. 5961-5966 | 18 | 60% | 19 |
7 | HATTORI, K , TORII, Y , (1991) ELECTRICAL-PROPERTIES OF INPXOY-INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 69. ISSUE 5. P. 3130-3134 | 20 | 95% | 22 |
8 | MUI, DSL , WANG, Z , MORKOC, H , (1993) A REVIEW OF III-V-SEMICONDUCTOR BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES AND DEVICES.THIN SOLID FILMS. VOL. 231. ISSUE 1-2. P. 107-124 | 31 | 53% | 34 |
9 | BERROUACHEDI, N , BOUSLAMA, M , ABDELLAOUI, A , GHAFFOUR, M , JARDIN, C , HAMAIDA, K , MONTEIL, Y , LOUNIS, Z , OUERDANE, A , (2009) INVESTIGATION BY EELS AND TRIM SIMULATION METHOD OF THE INTERACTION OF AR+ AND N+ IONS WITH THE INP COMPOUND.APPLIED SURFACE SCIENCE. VOL. 256. ISSUE 1. P. 21 -26 | 14 | 70% | 2 |
10 | AL-REFAIE, SN , (1999) ACTIVE EQUIVALENT NETWORK FOR STATES AT THE AL/INPO4 INTERFACE.SOLID-STATE ELECTRONICS. VOL. 43. ISSUE 2. P. 325 -334 | 13 | 100% | 1 |
Classes with closest relation at Level 1 |