Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
4033 | 1860 | 25.3 | 78% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
1210 | 2 | GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY | 9166 |
4033 | 1 | REFLECTANCE ANISOTROPY SPECTROSCOPY//REFLECTANCE DIFFERENCE SPECTROSCOPY//REFLECTION ANISOTROPY SPECTROSCOPY | 1860 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | REFLECTANCE ANISOTROPY SPECTROSCOPY | authKW | 368369 | 2% | 61% | 37 |
2 | REFLECTANCE DIFFERENCE SPECTROSCOPY | authKW | 270663 | 2% | 57% | 29 |
3 | REFLECTION ANISOTROPY SPECTROSCOPY | authKW | 191003 | 1% | 73% | 16 |
4 | SURFACE PHOTOABSORPTION | authKW | 147724 | 1% | 60% | 15 |
5 | ELECTRON COUNTING MODEL | authKW | 116728 | 0% | 89% | 8 |
6 | REFLECTANCE ANISOTROPY SPECTROSCOPY RAS | authKW | 105054 | 0% | 80% | 8 |
7 | GALLIUM ARSENIDE | authKW | 103408 | 7% | 5% | 121 |
8 | SUR E STUDY | address | 100541 | 0% | 88% | 7 |
9 | AS DESORPTION | authKW | 98491 | 0% | 100% | 6 |
10 | SURFACE RECONSTRUCTION | authKW | 82686 | 4% | 7% | 77 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 18240 | 52% | 0% | 962 |
2 | Physics, Applied | 7794 | 42% | 0% | 785 |
3 | Materials Science, Coatings & Films | 2959 | 9% | 0% | 176 |
4 | Crystallography | 2111 | 10% | 0% | 179 |
5 | Chemistry, Physical | 1831 | 23% | 0% | 428 |
6 | Materials Science, Multidisciplinary | 906 | 18% | 0% | 340 |
7 | Nanoscience & Nanotechnology | 670 | 7% | 0% | 136 |
8 | Physics, Multidisciplinary | 601 | 10% | 0% | 183 |
9 | Engineering, Electrical & Electronic | 105 | 7% | 0% | 133 |
10 | Microscopy | 7 | 0% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SUR E STUDY | 100541 | 0% | 88% | 7 |
2 | FESTKORPERTHEORIE THEORET OPT | 65402 | 2% | 13% | 31 |
3 | INVEST COMUNICAC OPT | 42881 | 1% | 13% | 20 |
4 | ELECT TELECOMUNICAT | 37517 | 0% | 57% | 4 |
5 | CHRISTIAN DOPPLER OBERFLACHENOPT | 32830 | 0% | 100% | 2 |
6 | IMAGING ADV NANOTECHNOL | 32830 | 0% | 100% | 2 |
7 | OPT ELLIPSOMETRY | 32830 | 0% | 100% | 2 |
8 | SCI TECHNOL CHEMPOB 88SACKVILLE ST | 32830 | 0% | 100% | 2 |
9 | COMP SCI ENGN SCI PHYS | 22792 | 0% | 28% | 5 |
10 | FESTKORPERPHYS THEORET OPT | 21885 | 0% | 67% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SURFACE SCIENCE | 39190 | 14% | 1% | 254 |
2 | JOURNAL OF CRYSTAL GROWTH | 16216 | 9% | 1% | 176 |
3 | PHYSICAL REVIEW B | 11619 | 19% | 0% | 346 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 9940 | 5% | 1% | 101 |
5 | APPLIED SURFACE SCIENCE | 5321 | 6% | 0% | 108 |
6 | PHYSICAL REVIEW LETTERS | 1334 | 5% | 0% | 92 |
7 | APPLIED PHYSICS LETTERS | 1287 | 5% | 0% | 98 |
8 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1145 | 2% | 0% | 38 |
9 | SURFACE REVIEW AND LETTERS | 1034 | 1% | 0% | 13 |
10 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 996 | 2% | 0% | 36 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | COLE, RJ , FARRELL, T , WEIGHTMAN, P , MARTIN, DS , (2005) REFLECTION ANISOTROPY SPECTROSCOPY.REPORTS ON PROGRESS IN PHYSICS. VOL. 68. ISSUE 6. P. 1251 -1341 | 174 | 58% | 215 |
2 | OHTAKE, A , (2008) SURFACE RECONSTRUCTIONS ON GAAS(001).SURFACE SCIENCE REPORTS. VOL. 63. ISSUE 7. P. 295-327 | 106 | 83% | 63 |
3 | SCHMIDT, WG , (2002) III-V COMPOUND SEMICONDUCTOR (001) SURFACES.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 75. ISSUE 1. P. 89 -99 | 90 | 87% | 84 |
4 | LABELLA, VP , KRAUSE, MR , DING, Z , THIBADO, PM , (2005) ARSENIC-RICH GAAS(001) SURFACE STRUCTURE.SURFACE SCIENCE REPORTS. VOL. 60. ISSUE 1-4. P. 1 -53 | 99 | 73% | 42 |
5 | XUE, QK , HASHIZUME, T , SAKURAI, T , (1999) SCANNING TUNNELING MICROSCOPY STUDY OF GAAS(001) SURFACES.APPLIED SURFACE SCIENCE. VOL. 141. ISSUE 3-4. P. 244 -263 | 75 | 85% | 50 |
6 | XUE, QK , HASHIZUME, T , SAKURAI, T , (1997) SCANNING TUNNELING MICROSCOPY OF III-V COMPOUND SEMICONDUCTOR (001) SURFACES.PROGRESS IN SURFACE SCIENCE. VOL. 56. ISSUE 1-2. P. 1 -131 | 97 | 62% | 136 |
7 | XUE, QK , HASHIZUME, T , ICHIMIYA, A , OHNO, T , HASEGAWA, Y , SAKURAI, T , (1997) SCANNING TUNNELING MICROSCOPY OF THE GAAS(001) SURFACE RECONSTRUCTIONS.SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY. VOL. 44. ISSUE 2. P. 113 -143 | 65 | 82% | 10 |
8 | SCHMIDT, WG , BECHSTEDT, F , LU, W , BERNHOLC, J , (2002) INTERPLAY OF SURFACE RECONSTRUCTION AND SURFACE ELECTRIC FIELDS IN THE OPTICAL ANISOTROPY OF GAAS(001).PHYSICAL REVIEW B. VOL. 66. ISSUE 8. P. - | 41 | 80% | 23 |
9 | LASTRAS-MARTINEZ, LF , BALDERAS-NAVARRO, RE , LASTRAS-MARTINEZ, A , HINGER, K , (2004) STRESS-INDUCED OPTICAL ANISOTROPIES MEASURED BY MODULATED REFLECTANCE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 19. ISSUE 9. P. R35-R46 | 37 | 84% | 9 |
10 | ERKOC, S , KOKTEN, H , (2000) ENERGETICS OF ARSENIC TERMINATED GAAS(001) SURFACES.INTERNATIONAL JOURNAL OF MODERN PHYSICS C. VOL. 11. ISSUE 6. P. 1225-1237 | 40 | 89% | 2 |
Classes with closest relation at Level 1 |