Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
13299 | 847 | 20.9 | 59% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
1210 | 2 | GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY | 9166 |
13299 | 1 | ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS | 847 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ECR HYDROGEN PLASMA | authKW | 72099 | 0% | 100% | 2 |
2 | ELECTROMAGNETIC GREENS FUNCTION | authKW | 72099 | 0% | 100% | 2 |
3 | IN SITU VACUUM PROCESS | authKW | 72099 | 0% | 100% | 2 |
4 | ATOMIC HYDROGEN CLEANING | authKW | 72095 | 0% | 50% | 4 |
5 | OXIDE DESORPTION | authKW | 72095 | 0% | 50% | 4 |
6 | GA2O | authKW | 48065 | 0% | 67% | 2 |
7 | HIGFET | authKW | 48065 | 0% | 67% | 2 |
8 | ATOMIC HYDROGEN | authKW | 43198 | 2% | 7% | 17 |
9 | SEMICOND INTEGRATED CIRCUIT | address | 40552 | 0% | 38% | 3 |
10 | ACID POLISHED | authKW | 36050 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 5270 | 51% | 0% | 429 |
2 | Physics, Condensed Matter | 3879 | 36% | 0% | 306 |
3 | Materials Science, Coatings & Films | 2975 | 14% | 0% | 117 |
4 | Chemistry, Physical | 507 | 19% | 0% | 159 |
5 | Nanoscience & Nanotechnology | 379 | 8% | 0% | 68 |
6 | Crystallography | 357 | 6% | 0% | 52 |
7 | Materials Science, Multidisciplinary | 287 | 16% | 0% | 135 |
8 | Engineering, Electrical & Electronic | 211 | 12% | 0% | 99 |
9 | Spectroscopy | 101 | 4% | 0% | 31 |
10 | Physics, Multidisciplinary | 91 | 6% | 0% | 55 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICOND INTEGRATED CIRCUIT | 40552 | 0% | 38% | 3 |
2 | DIPARTIMENTO FIS VIA G CAMPI 213A | 36050 | 0% | 100% | 1 |
3 | NANOELE ON ABORAT | 36050 | 0% | 100% | 1 |
4 | PHYS ETATS CONDENSES GRP CNRS URA 783 | 36050 | 0% | 100% | 1 |
5 | REPUBL CHINA TAIWAN INT PROGRAM | 36050 | 0% | 100% | 1 |
6 | GRP FIS SUPERFICIES | 20597 | 0% | 29% | 2 |
7 | ENEA TIB | 18024 | 0% | 50% | 1 |
8 | LMS CNRS | 18024 | 0% | 50% | 1 |
9 | OPTOELECT MICROWAVE DEVICES DEV | 18024 | 0% | 50% | 1 |
10 | STRUCT FUNCT PROPERTY GRP | 18024 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SURFACE SCIENCE | 12520 | 11% | 0% | 97 |
2 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 9855 | 2% | 2% | 18 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 7481 | 7% | 0% | 59 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 7099 | 6% | 0% | 53 |
5 | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 5046 | 3% | 0% | 29 |
6 | JOURNAL OF CRYSTAL GROWTH | 2837 | 6% | 0% | 50 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1840 | 3% | 0% | 25 |
8 | PHYSICAL REVIEW B | 1188 | 9% | 0% | 77 |
9 | SOUTH AFRICAN JOURNAL OF PHYSICS - SUID-AFRIKAANSE TYDSKRIF VIR FISIKA | 734 | 0% | 2% | 1 |
10 | VACUUM | 720 | 2% | 0% | 14 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ECR HYDROGEN PLASMA | 72099 | 0% | 100% | 2 | Search ECR+HYDROGEN+PLASMA | Search ECR+HYDROGEN+PLASMA |
2 | ELECTROMAGNETIC GREENS FUNCTION | 72099 | 0% | 100% | 2 | Search ELECTROMAGNETIC+GREENS+FUNCTION | Search ELECTROMAGNETIC+GREENS+FUNCTION |
3 | IN SITU VACUUM PROCESS | 72099 | 0% | 100% | 2 | Search IN+SITU+VACUUM+PROCESS | Search IN+SITU+VACUUM+PROCESS |
4 | ATOMIC HYDROGEN CLEANING | 72095 | 0% | 50% | 4 | Search ATOMIC+HYDROGEN+CLEANING | Search ATOMIC+HYDROGEN+CLEANING |
5 | OXIDE DESORPTION | 72095 | 0% | 50% | 4 | Search OXIDE+DESORPTION | Search OXIDE+DESORPTION |
6 | GA2O | 48065 | 0% | 67% | 2 | Search GA2O | Search GA2O |
7 | HIGFET | 48065 | 0% | 67% | 2 | Search HIGFET | Search HIGFET |
8 | ATOMIC HYDROGEN | 43198 | 2% | 7% | 17 | Search ATOMIC+HYDROGEN | Search ATOMIC+HYDROGEN |
9 | ACID POLISHED | 36050 | 0% | 100% | 1 | Search ACID+POLISHED | Search ACID+POLISHED |
10 | AES MOLECULAR BEAM EPITAXY MBE | 36050 | 0% | 100% | 1 | Search AES+MOLECULAR+BEAM+EPITAXY+MBE | Search AES+MOLECULAR+BEAM+EPITAXY+MBE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | NANNARONE, S , PEDIO, M , (2003) HYDROGEN CHEMISORPTION ON III-V SEMICONDUCTOR SURFACES.SURFACE SCIENCE REPORTS. VOL. 51. ISSUE 1-8. P. 1 -149 | 53 | 56% | 17 |
2 | INAOKA, T , (2001) EVOLUTION OF ELEMENTARY EXCITATIONS AT A DOPED POLAR SEMICONDUCTOR SURFACE IN A DEPLETION-LAYER FORMATION PROCESS.PHYSICAL REVIEW B. VOL. 63. ISSUE 16. P. - | 37 | 73% | 0 |
3 | JONES, TS , SCHWEITZER, MO , RICHARDSON, NV , BELL, GR , MCCONVILLE, CF , (1995) DEPLETION LAYERS, PLASMON DISPERSION, AND THE EFFECTS OF TEMPERATURE IN DEGENERATE INSB(100) - A STUDY BY ELECTRON-ENERGY-LOSS SPECTROSCOPY.PHYSICAL REVIEW B. VOL. 51. ISSUE 24. P. 17675-17680 | 29 | 97% | 8 |
4 | TAKESHITA, N , INAOKA, T , (2010) EVOLUTION OF ELECTRON STATES AT AN N-TYPE INSB SURFACE IN A DEPLETION-LAYER FORMATION PROCESS: EFFECT OF NONPARABOLICITY OF THE CONDUCTION-BAND DISPERSION.JOURNAL OF APPLIED PHYSICS. VOL. 107. ISSUE 3. P. - | 27 | 54% | 0 |
5 | SZUBER, J , TOMKIEWICZ, P , WINKLER, A , (2006) COMPARATIVE STUDY OF THE GAAS(100) SURFACE CLEANED BY ATOMIC HYDROGEN.APPLIED SURFACE SCIENCE. VOL. 252. ISSUE 21. P. 7647 -7658 | 27 | 57% | 14 |
6 | PROIX, F , (1991) DISSOCIATION EFFECTS OF H AND H-2+ ON CLEAN III-V COMPOUNDS.PHYSICA B-CONDENSED MATTER. VOL. 170. ISSUE 1-4. P. 457-468 | 30 | 83% | 14 |
7 | BELL, GR , KAIJAKS, NS , DIXON, RJ , MCCONVILLE, CF , (1998) ATOMIC HYDROGEN CLEANING OF POLAR III-V SEMICONDUCTOR SURFACES.SURFACE SCIENCE. VOL. 401. ISSUE 2. P. 125 -137 | 28 | 64% | 47 |
8 | INAOKA, T , (1996) CARRIER-CONCENTRATION DEPENDENCE OF PLASMON-POLAR PHONON COUPLING AT SEMICONDUCTOR SURFACES.SURFACE SCIENCE. VOL. 351. ISSUE 1-3. P. 259-276 | 21 | 91% | 1 |
9 | PUN, AF , ZHENG, JP , (2007) UTILIZING GALLIUM ARSENIDE SACRIFICIAL FILMS TO INHIBIT SURFACE ROUGHENING DURING THE THERMAL DESORPTION OF GALLIUM ARSENIDE.ELECTROCHEMICAL AND SOLID STATE LETTERS. VOL. 10. ISSUE 6. P. H189-H192 | 18 | 69% | 3 |
10 | INAOKA, T , (1996) STRUCTURE OF COUPLED CARRIER PLASMON-POLAR PHONON MODES AT SEMICONDUCTOR SURFACES.SURFACE SCIENCE. VOL. 357. ISSUE 1-3. P. 87 -91 | 17 | 100% | 1 |
Classes with closest relation at Level 1 |